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1. 发明授权

US4954424A Pattern fabrication by radiation-induced graft copolymerization 失效
标题翻译：通过辐射诱导接枝共聚的图案制作
公开(公告)号：US4954424A
公开(公告)日：1990-09-04
申请号：US295209
申请日：1988-12-20
申请人： Kozo Mochiji , Hiroaki Oizumi , Yasunari Soda , Taro Ogawa , Takeshi Kimura
发明人： Kozo Mochiji , Hiroaki Oizumi , Yasunari Soda , Taro Ogawa , Takeshi Kimura
IPC分类号： G03C5/00 , G03F7/00 , G03F7/027 , G03F7/038 , G03F7/38 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065
CPC分类号： G03F7/027 , G03F7/38 , Y10S430/168
摘要： The present invention provides a method of pattern fabrication by radiation-induced graft copolymerization which enables not only the fabrication of a very fine resist pattern in a very small exposure dosage but also excellent etching fabrication by utilizing the current dry etching process through the pattern fabrication by making use of a resist capable of causing radiation-induced graft copolymerization and having excellent dry etching resistance, i.e., a poly(methacrylate) having a phenyl group, polystyrene, or its derivative.
摘要翻译： PCT No.PCT / JP88 / 00691 Sec。 371日期：1988年12月20日 102（e）日期1988年12月20日PCT提交1988年7月11日PCT公布。第WO89 / 01187号公报日本1989年2月9日。本发明提供了一种通过辐射诱导的接枝共聚的图案制造方法，其不仅能够以非常小的曝光量制造非常精细的抗蚀剂图案，而且还利用电流干燥通过利用能够引起辐射诱导的接枝共聚和耐干蚀刻性优异的抗蚀剂，即具有苯基，聚苯乙烯或其衍生物的聚（甲基丙烯酸酯）的抗蚀剂进行图案制造的蚀刻工艺。

2. 发明授权

US5017458A Method for production of graft copolymer, pattern replication method, and base polymer and resist for graft copolymerization 失效
标题翻译：生产接枝共聚物的方法，图案复制方法和基础聚合物和接枝共聚抗蚀剂
公开(公告)号：US5017458A
公开(公告)日：1991-05-21
申请号：US354116
申请日：1989-05-22
申请人： Yasunari Soda , Kozo Mochiji , Hiroaki Oizumi , Takeshi Kimura
发明人： Yasunari Soda , Kozo Mochiji , Hiroaki Oizumi , Takeshi Kimura
IPC分类号： G03F7/004 , C08F2/46 , C08F291/00 , C08F291/18 , G03F7/38 , H01L21/027 , H01L21/30
CPC分类号： C08F291/18 , G03F7/38 , Y10S430/143 , Y10S430/168 , Y10S522/915
摘要： The method for production of a graft copolymer according to the present invention includes the step of adding to a base polymer capable of forming first radicals when irradiated with radiation an additive capable of combining with said first radicals to form second radicals stable against oxygen, the step of irradiating said base polymer containing the additive with radiation, and the step of introducing a monomer under an atmosphere free from oxygen, thereby to graft copolymerize said irradiated base polymer and said monomer.
摘要翻译：根据本发明的接枝共聚物的制备方法包括以下步骤：当用辐射照射能够与所述第一自由基结合的添加剂以形成对氧稳定的第二自由基时，能够形成第一自由基的基础聚合物，所述步骤用辐射照射含有添加剂的所述基础聚合物，以及在无氧气氛下引入单体的步骤，从而使所述照射的基础聚合物和所述单体接枝共聚。

3. 发明授权

US4960676A Method for forming pattern by using graft copolymerization 失效
标题翻译：通过接枝共聚形成图案的方法
公开(公告)号：US4960676A
公开(公告)日：1990-10-02
申请号：US199712
申请日：1988-05-27
申请人： Kozo Mochiji , Hiroaki Oizumi , Yasunari Soda , Takeshi Kimura
发明人： Kozo Mochiji , Hiroaki Oizumi , Yasunari Soda , Takeshi Kimura
IPC分类号： G03F7/027 , G03F7/38 , H05K3/00
CPC分类号： H05K3/0079 , G03F7/027 , G03F7/38 , H05K2203/0511 , H05K2203/086 , H05K2203/087 , Y10S430/168
摘要： The method for forming a pattern according to the present invention comprises a step of irradiating a resist layer applied on a substrate to be worked with X-ray radiation through a mask in an oxygen-containing atomsphere to expose said resist layer, a step of decomposing a peroxide produced within said exposed resist layer in an atmosphere free from oxygen, a step of introducing a monomer into said atmosphere free from oxygen to conduct graft copolymerization of said resist layer at the exposed portion with said monomer, and a step of developing said resist layer to remove said resist layer at the portion remaining ungrafted.

4. 发明授权

US5177773A X-ray mask and method for producing same 失效
标题翻译： X射线掩模及其制造方法
公开(公告)号：US5177773A
公开(公告)日：1993-01-05
申请号：US674406
申请日：1991-03-25
申请人： Hiroaki Oizumi , Kozo Mochiji , Shimpei Iijima
发明人： Hiroaki Oizumi , Kozo Mochiji , Shimpei Iijima
IPC分类号： G03F1/22
CPC分类号： G03F1/22
摘要： An X-ray mask comprises an absorber pattern composed of a material capable of absorbing X-ray, a mask substrate for supporting the absorber pattern, composed of a material capable of transmitting X-ray, and a support frame for supporting the mask substrate, wherein the mask substrate is composed of a mask substrate material whose impurity content is suppressed to reduce positional distortions generated by X-ray radiation. Generation of positional distortions by X-ray exposure is inhibited and an arrangement of mask pattern can be ensured with a high precision.
摘要翻译： X射线掩模包括由能够吸收X射线的材料构成的吸收体图案，由能够透射X射线的材料构成的用于支撑吸收体图案的掩模基板和支撑掩模基板的支撑框架，其特征在于，所述掩模基板由掩模基板材料构成，所述掩模基板材料的杂质含量被抑制以减少由X射线辐射产生的位置变形。通过X射线曝光产生位置失真，可以高精度地确保掩模图案的配置。

5. 发明授权

US5485497A Optical element and projection exposure apparatus employing the same 失效
标题翻译：使用其的光学元件和投影曝光装置
公开(公告)号：US5485497A
公开(公告)日：1996-01-16
申请号：US195047
申请日：1994-02-14
申请人： Hiroaki Oizumi , Masaaki Ito , Takashi Soga , Taro Ogawa , Kozo Mochiji , Eiji Takeda
发明人： Hiroaki Oizumi , Masaaki Ito , Takashi Soga , Taro Ogawa , Kozo Mochiji , Eiji Takeda
IPC分类号： G03F7/20 , G21K1/06 , G21K5/00
CPC分类号： G03F7/70058 , G03F7/708 , G21K1/06
摘要： An optical element which allows replication of a refined pattern and a projection exposure apparatus employing the optical element are disposed so that side face portions of predetermined patterns which create shadows from oblique incident exposure radiation may be minimized at a predetermined incidence angle of vacuum ultrasonic radiation or X-radiation, or the patterns of the optical element are formed such that the direction in which incident radiation is reflected regularly and the direction of side faces of the patterns may extend in parallel to each other. When the optical element is irradiated to replicate or image the patterns of the optical element, refined patterns can be replicated or imaged.
摘要翻译：允许复制精细图案的光学元件和采用光学元件的投影曝光装置被布置成使得可以在预定的真空超声波辐射入射角度使得从倾斜入射曝光辐射产生阴影的预定图案的侧面部分最小化， X射线或光学元件的图案形成为使得入射辐射有规律地反射的方向和图案的侧面的方向可以彼此平行地延伸。当照射光学元件以复制或成像光学元件的图案时，可以复制或成像精细图案。

6. 发明授权

US5372916A X-ray exposure method with an X-ray mask comprising phase shifter sidewalls 失效
标题翻译：具有包括移相器侧壁的X射线掩模的X射线曝光方法
公开(公告)号：US5372916A
公开(公告)日：1994-12-13
申请号：US909309
申请日：1992-07-06
申请人： Taro Ogawa , Kozo Mochiji , Seiichi Murayama , Hiroaki Oizumi , Takashi Soga , Seiji Yamamoto , Isao Ochiai
发明人： Taro Ogawa , Kozo Mochiji , Seiichi Murayama , Hiroaki Oizumi , Takashi Soga , Seiji Yamamoto , Isao Ochiai
IPC分类号： G03F1/22 , G03F1/26 , G03F7/20 , G03C5/00
CPC分类号： G03F7/70583 , G03F1/22 , G03F1/26 , G03F7/2039 , G03F7/70283 , G03F7/7035
摘要： In an X-ray exposure method, consideration was made to application of a concept of a phase shift method which is used for a light exposure method, in order to improve the resolution. As a result, phase shift layers made of a material having an appropriate refractivity are provided on side walls of an absorbing pattern of an X-ray mask to improve the resolution by an interference effect. One or more layers made of a material having a refractivity different from that of the absorbing pattern are formed on the side walls of the absorbing pattern of the X-ray mask.
摘要翻译：在X射线曝光方法中，为了提高分辨率，考虑了应用用于曝光方法的相移方法的概念。结果，由具有适当折射率的材料制成的相移层设置在X射线掩模的吸收图案的侧壁上，以通过干涉效应提高分辨率。在X射线掩模的吸收图案的侧壁上形成由具有与吸收图案的折射率不同的折射率的材料制成的一层或多层。

7. 发明授权

US5305364A Projection type X-ray lithography apparatus 失效
标题翻译：投影型X射线光刻设备
公开(公告)号：US5305364A
公开(公告)日：1994-04-19
申请号：US945146
申请日：1992-09-15
申请人： Kozo Mochiji , Hiroaki Oizumi , Shigeo Moriyama , Shinji Okazaki , Tsuneo Terasawa , Masaaki Itou
发明人： Kozo Mochiji , Hiroaki Oizumi , Shigeo Moriyama , Shinji Okazaki , Tsuneo Terasawa , Masaaki Itou
IPC分类号： G03F7/20 , H01L21/027 , G21K5/00
CPC分类号： G03F7/70233 , G03F7/70808 , G03F7/70841 , G03F7/70866 , G03F7/70883 , G03F7/70933
摘要： Reduction projection type X-ray lithography with an exposing beam wavelength of 40-150A, longer than in conventional 1:1 proximity exposure, has a high-vacuum space. This would reduce wafer replacement work efficiency and contaminate optical mirrors with substances released by a resist decomposed during exposure except for separating an optical system chamber and a wafer exposing chamber by a differential pumping section and a thin-film window. Wafer exposure is under atmospheric pressure, improving productivity, accuracy of exposure and longevity of the optical devices.
摘要翻译：具有40-150A的曝光光束波长的还原投影型X射线光刻比传统的1：1接近曝光更长，具有高真空空间。这将降低晶片更换工作效率，并且通过在曝光期间分解的抗蚀剂释放的物质污染光学反射镜，除了通过差分泵送部分和薄膜窗口分离光学系统室和晶片曝光室之外。晶圆曝光在大气压下，提高了生产率，曝光精度和光学元件的寿命。

8. 发明授权

US09291919B2 Light exposure method, and light exposure apparatus 有权
标题翻译：曝光方法和曝光装置
公开(公告)号：US09291919B2
公开(公告)日：2016-03-22
申请号：US13290204
申请日：2011-11-07
申请人： Hiroaki Oizumi
发明人： Hiroaki Oizumi
IPC分类号： G03F7/20
CPC分类号： G03F7/70033 , G03F7/70916
摘要： There is provided an EUV exposure apparatus which restrains its optical systems or a mask used therein from being polluted by contaminations generated in its chamber. An energy beam generating source is arranged near a wafer stage set in the chamber of the EUV exposure apparatus to decompose an emission gas generated from a resist painted on the front surface of a wafer by an energy beam. In this manner, lightening mirrors configuring a lightening optical system as one of the optical systems, projection mirrors configuring a projection optical system as another of the optical systems, the mask, and others are protected from being polluted by contaminations.
摘要翻译：提供了一种EUV曝光装置，其限制其光学系统或其中使用的掩模被其室中产生的污染物污染。能量束发生源设置在设置在EUV曝光装置的腔室中的晶片台附近，以通过能量束来分解由涂在晶片的前表面上的抗蚀剂产生的发射气体。以这种方式，配置作为光学系统之一的减光光学系统的减光镜，构成作为另一个光学系统的投影光学系统的投影镜，掩模等被保护而不被污染物污染。

9. 发明授权

US06613497B1 Light exposure method 失效
标题翻译：曝光方法
公开(公告)号：US06613497B1
公开(公告)日：2003-09-02
申请号：US09697736
申请日：2000-10-27
申请人： Nobuyuki Matsuzawa , Hiroaki Oizumi
发明人： Nobuyuki Matsuzawa , Hiroaki Oizumi
IPC分类号： G03C500
CPC分类号： G03F7/2039 , G03F7/0757 , Y10S430/167 , Y10S430/168
摘要： A light exposure method for ultra-fine processing for a semiconductor in which light transmittance of a resist layer in a wavelength range of the extreme ultraviolet (EUV) light is improved to enable ultra-fine processing more elaborate than is possible with conventional methods. In selectively exposing a resist layer to X-rays, a high molecular material obtained by replacing at least a portion of hydrogen atoms of a pre-existing resist material by a substituent containing an alkyl group and/or a substituent containing an aromatic ring is used as a high molecular material of the resist layer. By replacing the hydrogen atoms of the high molecular materials with a substituent containing an alkyl group or a substituent containing an aromatic ring, the proportion of oxygen atoms in an atom of the high molecular materials becomes relatively smaller to suppress optical absorption of the entire high molecular material. The line absorption coefficient in an x-ray wavelength is 3.80&mgr;−1 or less.
摘要翻译：对于在极紫外（EUV）光的波长范围内的抗蚀剂层的透光率得到改善以使得超细加工比常规方法更加精细化的半导体的超细加工的曝光方法。在将抗蚀剂层选择性地暴露于X射线时，使用通过用含有烷基和/或含有芳环的取代基取代含有烷基和/或取代基的原有抗原材料的至少一部分氢原子获得的高分子材料作为抗蚀剂层的高分子材料。通过用含有烷基或含有芳环的取代基取代高分子材料的氢原子，高分子材料的原子中氧原子的比例变得相对较小，以抑制整个高分子量的光吸收材料。 X射线波长的线吸收系数为3.80mu-1以下。

10. 发明授权

US5272744A Reflection mask 失效
标题翻译：反射面具
公开(公告)号：US5272744A
公开(公告)日：1993-12-21
申请号：US933300
申请日：1992-08-21
申请人： Masaaki Itou , Hiroaki Oizumi , Shigeo Moriyama
发明人： Masaaki Itou , Hiroaki Oizumi , Shigeo Moriyama
IPC分类号： G03F1/22 , G03F1/24 , G21K1/06 , H01L21/027 , G21K5/00
CPC分类号： G21K1/062 , B82Y10/00 , G03F1/24
摘要： In a reflection mask, there is formed at least one laminate structure comprising a high reflectivity portion, a middle portion and a high reflectivity portion. When there is a defect in the high reflectivity portion as the top layer, this high reflectivity portion and the underlying middle portion are removed in that defective position, thereby allowing the high reflectivity portion as the bottom layer to be exposed to repair the defect.
摘要翻译：在反射掩模中，形成至少一层包括高反射率部分，中间部分和高反射率部分的层压结构。当作为顶层的高反射率部分存在缺陷时，在该缺陷位置除去该高反射率部分和下面的中间部分，从而允许暴露高反射率部分以暴露以修复缺陷。

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