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1. 发明授权

US6162156A Packaging machine 失效
标题翻译：包装机
公开(公告)号：US6162156A
公开(公告)日：2000-12-19
申请号：US144022
申请日：1998-08-31
申请人： Yasuji Fujikawa , Takashi Arao , Michio Ueda
发明人： Yasuji Fujikawa , Takashi Arao , Michio Ueda
IPC分类号： B65B55/24 , B65B3/02 , B31B1/28
CPC分类号： B65B3/025
摘要： A packaging machine comprises a rotor 22 having radial mandrels 21 each adapted to carry a tubular blank 11 of square to rectangular cross section as fitted therearound and arranged to successively stop at a plurality of processing stations I to VIII, a group of devices 23 to 28 arranged respectively at the required stations among the processing stations I to VIII for folding and closing a container bottom forming end portion 14 of the blank 11 as fitted around the mandrel 21, and an air suction nozzle 31 for collecting extraneous matter is disposed at a required location along a path of movement of the mandrel.
摘要翻译：包装机包括转子22，转子22具有径向心轴21，每个心轴适于承载安装在其周围的方形至矩形横截面的管状坯料11，并且布置成在多个处理站I至VIII处连续停止一组装置23至28 分别设置在处理站I至VIII中的所需站处，用于折叠和封闭围绕心轴21装配的坯料11的容器底部形成端部14，并且用于收集外来物质的空气吸入嘴31设置在所需的位置沿着心轴的移动路径的位置。

2. 发明授权

US6041834A Liquid filling device 失效
标题翻译：液体灌装装置
公开(公告)号：US6041834A
公开(公告)日：2000-03-28
申请号：US144626
申请日：1998-08-31
申请人： Yasuji Fujikawa , Takashi Arao , Michio Ueda
发明人： Yasuji Fujikawa , Takashi Arao , Michio Ueda
IPC分类号： B65B3/04 , B65B39/00 , B67C3/22 , B67C3/26 , B65B43/42
CPC分类号： B67C3/22 , B65B39/00 , B67C3/26 , B67C2003/228
摘要： A liquid filling device comprises a filling nozzle 31 for filling contents into containers C being transported by a conveyor 13, and a lifter 34 for lifting the container C to be filled from the path of transport of the conveyor. The filling nozzle 31 has a lower portion providing a vertical cylinder portion 42 fittable with the container C to be lifted by the lifter 34. The filling nozzle 31 is provided with an air cover 51 comprising a top wall and a peripheral wall extending downward from an edge portion of the top wall. The filling nozzle 31 extends through the top wall, with its vertical cylinder portion 42 projecting into the air cover 51. The air cover 51 has connected thereto an outlet end of a dry air pipe 52.
摘要翻译：液体填充装置包括用于将内容物填充到由输送机13输送的容器C中的填充喷嘴31和用于从输送机的输送路径提升要填充的容器C的升降器34。填充喷嘴31具有下部，其提供可与提升器34提升的容器C配合的垂直圆筒部分42.填充喷嘴31设置有空气盖51，空气盖51包括顶壁和从下方延伸的周壁顶壁的边缘部分。填充喷嘴31延伸穿过顶壁，其垂直圆筒部分42突出到空气盖51中。空气盖51连接到干燥空气管52的出口端。

3. 发明授权

US06438929B2 Packaging machine 失效
标题翻译：包装机
公开(公告)号：US06438929B2
公开(公告)日：2002-08-27
申请号：US09853629
申请日：2001-05-14
申请人： Satoshi Kume , Takashi Arao , Michio Ueda
发明人： Satoshi Kume , Takashi Arao , Michio Ueda
IPC分类号： B65B326
CPC分类号： B65B9/213 , B65B37/00 , B65B51/303
摘要： A packaging machine comprises a filling device (13) for filling a tube T of packaging material having an open upper end and a closed lower end with contents in a predetermined amount at a time, and a device (14) for forming containers C by sealing and cutting the filled tube T transversely thereof into a length corresponding to one container at a time. The amount of contents to be filled into the container and the capacity of the container are so determined that the capacity is greater than the amount of contents to be filled.
摘要翻译：一种包装机，包括：填充装置（13），用于一次装入具有开口上端和封闭下端的包装材料的管T，所述包装材料的管子T一次为预定量的内容物;以及用于通过密封形成容器C的装置（14）并将填充管T的横向切割成一次对应于一个容器的长度。要填充到容器中的内容物量和容器的容量被确定为容量大于要填充的内容物的量。

4. 发明申请

US20120235276A1 ELECTRODE TREATMENTS FOR ENHANCED DRAM PERFORMANCE 审中-公开
标题翻译：用于增强DRAM性能的电极处理
公开(公告)号：US20120235276A1
公开(公告)日：2012-09-20
申请号：US13051531
申请日：2011-03-18
申请人： Xiangxin Rui , Hanhong Chen , Edward Haywood , Sandra Malhotra , Takashi Arao , Naonori Fujiwara , Toshiyuki Hirota , Takakazu Kiyomura , Kenichi Koyanagi
发明人： Xiangxin Rui , Hanhong Chen , Edward Haywood , Sandra Malhotra , Takashi Arao , Naonori Fujiwara , Toshiyuki Hirota , Takakazu Kiyomura , Kenichi Koyanagi
IPC分类号： H01L29/02 , H01L21/02
CPC分类号： H01L28/60 , H01L21/02 , H01L27/1085 , H01L28/40
摘要： A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO2) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a second TiN electrode on the dielectric material.
摘要翻译：公开了一种用于制造动态随机存取存储器电容器的方法。该方法可以包括沉积第一氮化钛（TiN）电极; 在第一TiN电极上形成第一层二氧化钛（TiO 2）; 在第一层二氧化钛上沉积电介质材料; 以及在所述电介质材料上沉积第二TiN电极。

5. 发明申请

US20100203741A1 SEMICONDUCTOR MANUFACTURING SYSTEM 有权
标题翻译：半导体制造系统
公开(公告)号：US20100203741A1
公开(公告)日：2010-08-12
申请号：US12766319
申请日：2010-04-23
申请人： Yuichiro MOROZUMI , Kenichi Koyanagi , Takashi Arao , Kazunori Une
发明人： Yuichiro MOROZUMI , Kenichi Koyanagi , Takashi Arao , Kazunori Une
IPC分类号： H01L21/473 , H01L21/469
CPC分类号： C23C16/45548 , C23C16/405
摘要： Disclosed is a technique for effectively suppressing the generation of particles resulting from peeling-off of unnecessary films that have unavoidably adhered to the inner surface of the reaction tube of an ALD film-forming apparatus. A precoating process utilizing ALD is performed to deposit a metal oxide film, e.g., an aluminum oxide film, onto the unnecessary films, in order to prevent peeling-off of the unnecessary films. The type and/or position of the nozzle for supplying ozone, as a precoat gas, into the reaction tube during the precoating process is different from that of the nozzle for supplying ozone, as a film-forming gas, into the reaction tube during forming of a film on a semiconductor substrate.
摘要翻译：公开了一种用于有效地抑制由于不可避免地粘附到ALD膜形成装置的反应管的内表面的不需要的膜而产生的颗粒的产生的技术。执行利用ALD的预涂工艺以将不需要的膜上的金属氧化物膜，例如氧化铝膜沉积到不需要的膜上，以防止不需要的膜的剥离。用于在预涂工艺期间将臭氧作为预涂气体供应到反应管中的喷嘴的类型和/或位置与在成形期间作为成膜气体供应到反应管中的作为成膜气体的喷嘴的喷嘴不同的半导体衬底上的膜。

6. 发明授权

US08574998B2 Leakage reduction in DRAM MIM capacitors 有权
标题翻译： DRAM MIM电容器的漏电减少
公开(公告)号：US08574998B2
公开(公告)日：2013-11-05
申请号：US13311368
申请日：2011-12-05
申请人： Sandra Malhotra , Kenichi Koyanagi , Hiroyuki Ode , Xiangxin Rui , Takashi Arao , Naonori Fujiwara
发明人： Sandra Malhotra , Kenichi Koyanagi , Hiroyuki Ode , Xiangxin Rui , Takashi Arao , Naonori Fujiwara
IPC分类号： H01L21/02
CPC分类号： H01L28/40 , H01G4/1272 , H01G4/306 , H01G4/33 , H01L21/02175 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228
摘要： A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (
摘要翻译：用于减少DRAM MIM电容器中的漏电流的方法包括从非晶高掺杂材料，非晶高带隙材料以及轻掺杂或非掺杂材料形成多层电介质叠层。退火步骤后，高掺杂材料将保持无定形（<30％结晶）。在退火步骤之后，高带隙材料将保持无定形（<30％结晶）。在退火步骤之后，轻掺杂或非掺杂材料将变成晶体（> = 30％结晶）。高带隙材料形成在无定形高掺杂材料和轻掺杂材料和非掺杂材料之间，并提供通过多层电介质叠层的导电的中间屏障。

7. 发明授权

US07576016B2 Process for manufacturing semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US07576016B2
公开(公告)日：2009-08-18
申请号：US11842762
申请日：2007-08-21
申请人： Kenichi Koyanagi , Takashi Arao
发明人： Kenichi Koyanagi , Takashi Arao
IPC分类号： H01L21/31 , H01L21/469 , H01L21/44
CPC分类号： H01L21/31616 , C23C16/45527 , C23C16/45546 , C23C16/54 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/3142 , H01L21/31645 , H01L27/10814 , H01L27/10852 , H01L28/82
摘要： An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric body formed on the bottom of a hole such as a capacitor formed on a semiconductor substrate is reduced as the hole is finer and deeper.A dielectric body is formed by an ALD film deposition process comprising a gas flow sequence where a purging step after supplying a source and a reactant gases is a two-stage purging of vacuum purging and gas purging and the step of supplying a reactant gas is further divided. The process allows a highly reliable dielectric body to be formed in the bottom of a deep hole, contributing to improvement in reliability of a capacitor and a semiconductor device.
摘要翻译：本发明的一个目的是解决在有利于提高生产量的垂直批量处理机的ALD膜沉积中，形成在诸如形成在半导体衬底上的电容器的孔的底部上的电介质的可靠性降低因为洞更细更深。通过包括气流序列的ALD膜沉积法形成电介质体，其中供给源和反应气体之后的清洗步骤是真空清洗和气体净化的两级清洗，并且进一步提供反应气体的步骤分为。该方法允许在深孔的底部形成高度可靠的绝缘体，有助于提高电容器和半导体器件的可靠性。

8. 发明授权

US07763500B2 Method for manufacturing semiconductor storage device comprising a slow cooling step 失效
标题翻译：一种制造半导体存储装置的方法，包括缓慢冷却步骤
公开(公告)号：US07763500B2
公开(公告)日：2010-07-27
申请号：US11498129
申请日：2006-08-03
申请人： Takashi Arao , Kenichi Koyanagi , Kenji Komeda , Naruhiko Nakanishi , Hideki Gomi
发明人： Takashi Arao , Kenichi Koyanagi , Kenji Komeda , Naruhiko Nakanishi , Hideki Gomi
IPC分类号： H01L21/335 , H01L21/8232
CPC分类号： H01L28/40 , H01L27/10852 , H01L28/84
摘要： First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.
摘要翻译：首先，准备设置有存储单元的主要部分的基底结构，然后在基底结构上形成包括多晶硅膜的下部电极。接下来，将下电极的表面在预定温度下热氮化，以形成氮化硅膜。在下电极的热氮化中，将温度升高到预定的氮化温度，之后以比通常更渐进的速度降低温度。此后，在下电极上形成作为电容绝缘膜的氧化铝（Al2O3）或其他金属氧化物电介质膜，在电容绝缘膜上形成上电极。

9. 发明申请

US20070032034A1 Method for manufacturing semiconductor storage device 失效
标题翻译：半导体存储装置的制造方法
公开(公告)号：US20070032034A1
公开(公告)日：2007-02-08
申请号：US11498129
申请日：2006-08-03
申请人： Takashi Arao , Kenichi Koyanagi , Kenji Komeda , Naruhiko Nakanishi , Hideki Gomi
发明人： Takashi Arao , Kenichi Koyanagi , Kenji Komeda , Naruhiko Nakanishi , Hideki Gomi
IPC分类号： H01L21/20
CPC分类号： H01L28/40 , H01L27/10852 , H01L28/84
摘要： First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.
摘要翻译：首先，准备设置有存储单元的主要部分的基底结构，然后在基底结构上形成包括多晶硅膜的下部电极。接下来，将下电极的表面在预定温度下热氮化，以形成氮化硅膜。在下电极的热氮化中，将温度升高到预定的氮化温度，之后以比通常更渐进的速度降低温度。然后在下电极上形成氧化铝（Al 2 O 3 3）或其它金属氧化物电介质膜作为电容绝缘膜，并且上电极形成在电容绝缘膜。

10. 发明授权

US5094278A Filling nozzle 失效
标题翻译：灌装喷嘴
公开(公告)号：US5094278A
公开(公告)日：1992-03-10
申请号：US656533
申请日：1991-02-19
申请人： Takashi Arao , Yoshihiro Saijo , Tadaaki Kume
发明人： Takashi Arao , Yoshihiro Saijo , Tadaaki Kume
IPC分类号： B65B39/00 , B67C3/26 , B67C3/28
CPC分类号： B67C3/28 , B65B39/00 , B65B2039/008 , B67C2003/2671
摘要： A filling nozzle comprising a vertical tubular nozzle body, and at least one perforated plate disposed at a lower-end opening of the nozzle body for preventing a liquid from flowing down under gravity by the surface tension of the liquid. The perforated plate has an opening degree varying from small to great from its center or the vicinity thereof toward its periphery or the vicinity thereof.
摘要翻译：一种填充喷嘴，包括垂直管状喷嘴体，以及设置在喷嘴体的下端开口处的至少一个穿孔板，用于防止液体在重力作用下由于液体的表面张力而向下流动。多孔板的开口度从其中心或其附近朝其周边或其附近从小到大变化。

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