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    • 2. 发明申请
    • Polishing body
    • 抛光体
    • US20060075686A1
    • 2006-04-13
    • US11288094
    • 2005-11-29
    • Kou HasegawaHozumi SatouOsamu IshikawaYukio Hosaka
    • Kou HasegawaHozumi SatouOsamu IshikawaYukio Hosaka
    • B24B7/30B24D18/00
    • B24B37/245B24B37/24B24D3/28B24D11/001B24D18/0009C09K3/1454
    • An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.
    • 本发明的目的是提供一种抛光体,其中抛光体中的磨料非常分散,在抛光过程中提供稳定的抛光性能,并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯,苯乙烯,甲基丙烯酸甲酯,衣康酸,丙烯酸,α-甲基苯乙炔二酮和叔十二烷基硫醇,制得本发明中构成抛光体的抛光部分,使混合物反应16小时 在75℃下得到其中分散共聚物的乳液,将该乳液调节至pH8.5,并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌,得到水分散液,通过涂布干燥该水性分散体 薄膜穿过薄膜,并模压所获得的干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用,用于研磨半导体晶片等的表面。
    • 4. 发明授权
    • Polishing body
    • 抛光体
    • US07201641B2
    • 2007-04-10
    • US11288086
    • 2005-11-29
    • Kou HasegawaHozumi SatouOsamu IshikawaYukio Hosaka
    • Kou HasegawaHozumi SatouOsamu IshikawaYukio Hosaka
    • B24B1/00
    • B24B37/245B24B37/24B24D3/28B24D11/001B24D18/0009C09K3/1454
    • An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.
    • 本发明的目的是提供一种抛光体,其中抛光体中的磨料非常分散,在抛光过程中提供稳定的抛光性能,并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯,苯乙烯,甲基丙烯酸甲酯,衣康酸,丙烯酸,α-甲基苯乙炔二酮和叔十二烷基硫醇,制得本发明中构成抛光体的抛光部分,使混合物反应16小时 在75℃下得到其中分散共聚物的乳液,将该乳液调节至pH8.5,并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌,得到水分散液,通过涂布干燥该水性分散体 薄膜穿过薄膜,并模压所获得的干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用,用于研磨半导体晶片等的表面。
    • 6. 发明授权
    • Abrasive material
    • 磨料
    • US07001252B2
    • 2006-02-21
    • US10030141
    • 2001-05-29
    • Kou HasegawaHozumi SatouOsamu IshikawaYukio Hosaka
    • Kou HasegawaHozumi SatouOsamu IshikawaYukio Hosaka
    • B24B7/22
    • B24B37/245B24B37/24B24D3/28B24D11/001B24D18/0009C09K3/1454
    • An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.
    • 本发明的目的是提供一种抛光体,其中抛光体中的磨料非常分散,在抛光过程中提供稳定的抛光性能,并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯,苯乙烯,甲基丙烯酸甲酯,衣康酸,丙烯酸,α-甲基苯乙炔二酮和叔十二烷基硫醇,制得本发明中构成抛光体的抛光部分,使混合物反应16小时 在75℃下,得到其中分散共聚物的乳液,将该乳液调节至pH8.5,并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌,得到水分散体,通过涂布干燥该水性分散体 薄膜穿过薄膜,模压所得干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用,用于研磨半导体晶片等的表面。
    • 8. 发明授权
    • Polishing method
    • 抛光方法
    • US06777335B2
    • 2004-08-17
    • US09995613
    • 2001-11-29
    • Kou Hasegawa
    • Kou Hasegawa
    • H01K21302
    • B24D3/34B24B37/24
    • It is an object of the present invention to provide a polishing method, with which a surface of high flatness can be obtained without fail at a high removal rate and in a stable manner. The polishing method is to polish a surface to be polished of an object to be polished by using a polishing pad while existing an aqueous chemical mechanical polishing solution containing an oxidizing agent such as hydrogen peroxide between polishing surface of the polishing pad equipped with a polishing part that contains abrasive, and the surface to be polished to be polished of the object to be polished. The aqueous chemical mechanical polishing solution may be contained a heterocyclic compound, a multivalent metal ion, an organic acid and the like. Also, the aqueous chemical mechanical solution may be contained no abrasive.
    • 本发明的目的是提供一种抛光方法,其以高的去除率和稳定的方式可以获得高平坦度的表面。 抛光方法是通过使用抛光垫来抛光待抛光物体的待抛光表面,同时在抛光垫的抛光表面上装有含有氧化剂如过氧化氢的水性化学机械抛光溶液, 其中含有研磨剂,待抛光的表面被抛光的被抛物体。 水性化学机械研磨液可以含有杂环化合物,多价金属离子,有机酸等。 此外,水性化学机械溶液可以不含磨料。
    • 9. 发明申请
    • POLISHING PAD AND PRODUCTION METHOD THEREOF
    • 抛光垫及其生产方法
    • US20080313967A1
    • 2008-12-25
    • US12197643
    • 2008-08-25
    • Fujio SAKURAIIwao MiharaYoshinori IgarashiKou Hasegawa
    • Fujio SAKURAIIwao MiharaYoshinori IgarashiKou Hasegawa
    • C08J5/14
    • B24D18/00B24B37/24B24D3/342
    • There are provided a polishing pad which exhibits excellent polishing stability and excellent slurry retainability during polishing and even after dressing, can prevent a reduction in polishing rate effectively and is also excellent in an ability to flatten an substrate to be polished, and a method for producing the polishing pad. The method comprises dispersing water-soluble particles such as β-cyclodextrin into a crosslinking agent such as a polypropylene glycol so as to obtain a dispersion, mixing the dispersion with a polyisocyanate such as 4,4′-diphenylmethane diisocyanate and/or an isocyanate terminated urethane prepolymer, and reacting the mixed solution so as to obtain a polishing pad having the water-soluble particles dispersed in the matrix.
    • 本发明提供一种抛光垫,其研磨稳定性优异,研磨时的浆料保持性,即使在修整后也能够有效地抑制研磨速度的降低,并且能够使待研磨的基材平坦化的能力优异, 抛光垫。 该方法包括将水溶性颗粒如β-环糊精分散到诸如聚丙二醇的交联剂中以得到分散体,将分散体与多异氰酸酯如4,4'-二苯基甲烷二异氰酸酯和/或异氰酸酯封端 氨基甲酸酯预聚物,并使混合溶液反应,以获得具有分散在基质中的水溶性颗粒的抛光垫。