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1. 发明申请

US20070267579A1 Photomask correction method using composite charged particle beam, and device used in the correction method 审中-公开
公开(公告)号：US20070267579A1
公开(公告)日：2007-11-22
申请号：US11646723
申请日：2006-12-28
申请人： Yasuhiko Sugiyama , Junichi Tashiro , Anto Yasaka
发明人： Yasuhiko Sugiyama , Junichi Tashiro , Anto Yasaka
IPC分类号： H01J3/14
CPC分类号： G03F1/74
摘要： The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.

2. 发明授权

US07172839B2 Photomask correction method using composite charged particle beam, and device used in the correction method 有权
标题翻译：使用复合带电粒子束的光掩模校正方法，以及在校正方法中使用的装置
公开(公告)号：US07172839B2
公开(公告)日：2007-02-06
申请号：US10721522
申请日：2003-11-24
申请人： Yasuhiko Sugiyama , Junichi Tashiro , Anto Yasaka
发明人： Yasuhiko Sugiyama , Junichi Tashiro , Anto Yasaka
IPC分类号： G03F9/00 , C03C15/00 , G01L21/30
CPC分类号： G03F1/74
摘要： The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.
摘要翻译：本发明的目的是提供一种解决由于镓离子照射引起的表面损伤的问题的方法，当使用当前建立的FIB技术进行掩模修复时存在问题，并且存在残留镓的问题，并提供一种装置实现这个方法。本发明的装置具有能够进行处理的电子束透镜镜筒以及设置在同一样品室内的FIB镜筒，这意味着本发明的掩模修复方法在校正处理中去除冗余部分如掩模不透明缺陷，相移膜凸起缺陷或玻璃衬底切割残余缺陷包括通过使用聚焦离子束的蚀刻进行粗略校正的步骤和使用电子束进行精加工的步骤以去除表面损伤由于镓照射和残留的镓。

3. 发明授权

US08963100B2 Nitrogen ions from a gas field ion source held at a pressure of 1.0 x 10^(-6) pa to 1.0 x 10^(-2) pa 有权
标题翻译：来自气田离子源的氮离子保持在1.0×10 ^（ - 6）Pa至1.0×10 ^（ - 2）Pa
公开(公告)号：US08963100B2
公开(公告)日：2015-02-24
申请号：US13654509
申请日：2012-10-18
申请人： Anto Yasaka , Fumio Aramaki , Yasuhiko Sugiyama , Tomokazu Kozakai , Osamu Matsuda
发明人： Anto Yasaka , Fumio Aramaki , Yasuhiko Sugiyama , Tomokazu Kozakai , Osamu Matsuda
IPC分类号： H01J37/08 , G21K5/04 , H01J37/305
CPC分类号： H01J27/024 , H01J27/26 , H01J37/08 , H01J37/3056 , H01J2237/0807 , H01J2237/182
摘要： A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter, and the gas supply unit maintains the pressure in the ion source chamber in the range 1.0×10−6 Pa to 1.0×10−2 Pa. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.
摘要翻译：聚焦离子束装置具有离子源室，其中设置有用于发射离子的发射极。气体供给单元向离子源室供给氮气，使得氮气吸附在发射体的表面，气体供给单元将离子源室内的压力维持在1.0×10 -6 Pa〜1.0× 10-2Pa。提取电极与发射极间隔开，电压施加到提取电极，使吸附的氮气离子化，并以离子束的形式提取氮离子。温度控制单元控制发射器的温度。

4. 发明授权

US5153440A Method of stabilizing operation for a liquid metal ion source 失效
标题翻译：稳定液态金属离子源操作的方法
公开(公告)号：US5153440A
公开(公告)日：1992-10-06
申请号：US679861
申请日：1991-04-03
申请人： Anto Yasaka
发明人： Anto Yasaka
IPC分类号： H01J27/02 , H01J27/22 , H01J27/26 , H01J37/04 , H01J37/08
CPC分类号： H01J27/22 , H01J2237/0805
摘要： A method of stabilizing the operation of a liquid metal ion source in a focussed ion beam apparatus, the ion source being composed of a metal needle having a pointed downstream end and a lateral surface, a reservoir for supplying a liquid metal to the surface of the needle, a device for heating the metal, an extraction electrode having a small aperture disposed at a position opposite the metal needle for allowing an ion current to pass through the aperture, and a circuit for applying a voltage between the metal needle and the extraction electrode. According to the method the temperature of the liquid metal in the reservoir is normally maintained at a first value corresponding to a usual operating temperature value, and the temperature of the liquid metal is temporarily raised to a second value higher than the first value, by operation of the heating device, in order to maintain stable long term operation of the ion source. In addition, the extraction voltage may be temporarily raised together with or independently of the temperature raising operation.
摘要翻译：一种在聚焦离子束装置中稳定液态金属离子源的操作的方法，该离子源由具有尖锐的下游端和侧表面的金属针组成，用于将液体金属供应到针，用于加热金属的装置，具有设置在与金属针相对的位置处的小孔的引出电极，用于允许离子电流通过孔，以及用于在金属针和提取电极之间施加电压的电路。根据该方法，储存器中的液态金属的温度通常保持在对应于通常工作温度值的第一值，并且通过操作将液态金属的温度暂时升高到高于第一值的第二值的加热装置，以保持离子源的长期稳定运行。此外，提取电压可以与升温操作一起或独立于温度提升操作而暂时升高。

5. 发明授权

US08460842B2 Defect repair apparatus and method for EUV mask using a hydrogen ion beam 有权
标题翻译：使用氢离子束的EUV掩模的缺陷修复装置和方法
公开(公告)号：US08460842B2
公开(公告)日：2013-06-11
申请号：US12931412
申请日：2011-01-28
申请人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
发明人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
IPC分类号： G03F1/74 , G21G5/00
CPC分类号： G21K1/062 , B82Y10/00 , G03F1/24 , G03F1/74 , G03F1/86 , H01J2237/31742
摘要： A defect repair apparatus for an EUV mask has an ion beam column that scans and irradiates the EUV mask with a focused hydrogen ion beam such that no region of the EUV mask receives an amount of beam irradiation exceeding 4×1016 ions/cm2. The ion beam column comprises a gas field ion source having an emitter with a pointed tip end that emits hydrogen ions that form the hydrogen ion beam, and an ion optical system that focuses and scans the hydrogen ion beam onto the EUV mask. A detector detects secondary charged particles generated from the EUV mask when irradiated with the hydrogen ion beam, and an image forming section forms and displays an observation image of the EUV mask on the basis of an output signal from the detector so that a defect in the EUV mask and the progress of the defect repair can be observed.
摘要翻译：用于EUV掩模的缺陷修复装置具有离子束柱，其利用聚焦的氢离子束扫描和照射EUV掩模，使得EUV掩模的区域不会接收超过4×1016个离子/ cm 2的光束照射量。离子束柱包括气体离子源，其具有发射体，其具有发射形成氢离子束的氢离子的尖端，以及将氢离子束聚焦并扫描到EUV掩模上的离子光学系统。当用氢离子束照射时，检测器检测从EUV掩模产生的二次带电粒子，并且图像形成部分基于来自检测器的输出信号形成并显示EUV掩模的观察图像，使得在可以观察到EUV面罩和缺陷修复的进展。

6. 发明授权

US4902530A Method of correcting a pattern film 失效
标题翻译：校正图案胶片的方法
公开(公告)号：US4902530A
公开(公告)日：1990-02-20
申请号：US157922
申请日：1988-02-19
申请人： Anto Yasaka , Yoshitomo Nakagawa , Mitsuyoshi Sato
发明人： Anto Yasaka , Yoshitomo Nakagawa , Mitsuyoshi Sato
IPC分类号： G03F1/00 , G03F1/74
CPC分类号： G03F1/74
摘要： According to the present invention, an apparatus for correcting a pattern film wherein an organic compound vapor is directed to a defect in a mask or IC while an ion beam is irradiated and scanned for depositing film on the white defect is furnished with a circuit for calculating film deposition area based on the reproduced image of a mask pattern, whereby elongating the total scanning time by inserting blank time in the scanning time, during which the ion beam is not irradiated (this operation is hereinafter referred to as blanking), when the ratio of the film deposition area to the ion beam current for an organic compound directed by a gas gun is lower than a predetermined level. Because of this operation, the molecule of the organic compound vapor is sufficiently deposited on the mask of IC surface, and therefore, a film having good light shielding or good conductance can be deposited with strong bonding.
摘要翻译：根据本发明，一种用于校正图案膜的装置，其中有机化合物蒸气被引导到掩模或IC中的缺陷，同时照射和扫描离子束以在白色缺陷上沉积膜，其具有计算电路基于掩模图案的再现图像的膜沉积区域，通过在扫描时间内插入空白时间（在此以下称为消隐），延长总扫描时间）由用于由气枪引导的有机化合物的离子束电流低于预定水平。由于这种操作，有机化合物蒸气的分子充分地沉积在IC表面的掩模上，因此可以以很强的粘合沉积具有良好遮光性或良好电导率的膜。

7. 发明授权

US09257273B2 Charged particle beam apparatus, thin film forming method, defect correction method and device forming method 有权
标题翻译：带电粒子束装置，薄膜形成方法，缺陷校正方法和器件形成方法
公开(公告)号：US09257273B2
公开(公告)日：2016-02-09
申请号：US13876274
申请日：2011-09-22
申请人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
发明人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
IPC分类号： H01L21/31 , H01L21/02 , H01J37/317 , C23C16/04 , C23C16/24 , C23C16/32 , C23C16/40 , C23C16/42 , C23C16/48 , C23C16/56 , H01L21/66 , H01L21/28 , H01L29/66
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
摘要翻译：提供带电粒子束装置，其比使用氢化硅和卤化物作为源气体的常规沉积更快地实现半导体膜沉积。带电粒子束装置包括带电粒子源1，聚光透镜电极2，消隐电极3，扫描电极4，其上安装有样品9的样品台10，二次带电粒子检测器8，其检测次级响应于带电粒子束照射从样品9产生的带电粒子7，容纳环戊硅烷作为源气体的储存器14以及将源气体供应到样品9的气枪11。

8. 发明申请

US20130224889A1 CHARGED PARTICLE BEAM APPARATUS, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FORMING METHOD 有权
标题翻译：充电颗粒光束装置，薄膜形成方法，缺陷校正方法和装置形成方法
公开(公告)号：US20130224889A1
公开(公告)日：2013-08-29
申请号：US13876274
申请日：2011-09-22
申请人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
发明人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
IPC分类号： H01L21/02
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
摘要翻译：提供带电粒子束装置，其比使用氢化硅和卤化物作为源气体的常规沉积更快地实现半导体膜沉积。带电粒子束装置包括带电粒子源1，聚光透镜电极2，消隐电极3，扫描电极4，其上安装有样品9的样品台10，二次带电粒子检测器8，其检测次级响应于带电粒子束照射从样品9产生的带电粒子7，容纳环戊硅烷作为源气体的储存器14以及将源气体供应到样品9的气枪11。

9. 发明申请

US20110189593A1 Defect repair apparatus and method for EUV mask 有权
标题翻译： EUV面罩缺陷修复装置及方法
公开(公告)号：US20110189593A1
公开(公告)日：2011-08-04
申请号：US12931412
申请日：2011-01-28
申请人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
发明人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
IPC分类号： G03F1/00 , B05C11/00 , C23C16/455 , C23C16/48 , C23F1/08 , H01J37/285
CPC分类号： G21K1/062 , B82Y10/00 , G03F1/24 , G03F1/74 , G03F1/86 , H01J2237/31742
摘要： A defect repair apparatus for an EUV mask includes: a gas field ion source that generates a hydrogen ion beam;an ion optical system that scans and irradiates the hydrogen ion beam by focusing the hydrogen ion beam onto the EUV mask; a sample stage on which to place the EUV mask; a detector that detects secondary charged-particles generated from the EUV mask; and an image forming unit that forms an observation image of the EUV mask on the basis of an output signal from the detector.
摘要翻译：用于EUV掩模的缺陷修复装置包括：产生氢离子束的气体场离子源; 离子光学系统，其通过将氢离子束聚焦到EUV掩模上来扫描和照射氢离子束; 放置EUV面罩的样品台; 检测器，其检测从EUV掩模产生的二次带电粒子; 以及图像形成单元，其基于来自检测器的输出信号形成EUV掩模的观察图像。

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