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1. 发明授权

US08460842B2 Defect repair apparatus and method for EUV mask using a hydrogen ion beam 有权
标题翻译：使用氢离子束的EUV掩模的缺陷修复装置和方法
公开(公告)号：US08460842B2
公开(公告)日：2013-06-11
申请号：US12931412
申请日：2011-01-28
申请人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
发明人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
IPC分类号： G03F1/74 , G21G5/00
CPC分类号： G21K1/062 , B82Y10/00 , G03F1/24 , G03F1/74 , G03F1/86 , H01J2237/31742
摘要： A defect repair apparatus for an EUV mask has an ion beam column that scans and irradiates the EUV mask with a focused hydrogen ion beam such that no region of the EUV mask receives an amount of beam irradiation exceeding 4×1016 ions/cm2. The ion beam column comprises a gas field ion source having an emitter with a pointed tip end that emits hydrogen ions that form the hydrogen ion beam, and an ion optical system that focuses and scans the hydrogen ion beam onto the EUV mask. A detector detects secondary charged particles generated from the EUV mask when irradiated with the hydrogen ion beam, and an image forming section forms and displays an observation image of the EUV mask on the basis of an output signal from the detector so that a defect in the EUV mask and the progress of the defect repair can be observed.
摘要翻译：用于EUV掩模的缺陷修复装置具有离子束柱，其利用聚焦的氢离子束扫描和照射EUV掩模，使得EUV掩模的区域不会接收超过4×1016个离子/ cm 2的光束照射量。离子束柱包括气体离子源，其具有发射体，其具有发射形成氢离子束的氢离子的尖端，以及将氢离子束聚焦并扫描到EUV掩模上的离子光学系统。当用氢离子束照射时，检测器检测从EUV掩模产生的二次带电粒子，并且图像形成部分基于来自检测器的输出信号形成并显示EUV掩模的观察图像，使得在可以观察到EUV面罩和缺陷修复的进展。

2. 发明申请

US20130099133A1 FOCUSED ION BEAM APPARATUS 有权
标题翻译：聚焦离子束设备
公开(公告)号：US20130099133A1
公开(公告)日：2013-04-25
申请号：US13654509
申请日：2012-10-18
申请人： Anto YASAKA , Fumio ARAMAKI , Yasuhiko SUGIYAMA , Tomokazu KOZAKAI , Osamu MATSUDA
发明人： Anto YASAKA , Fumio ARAMAKI , Yasuhiko SUGIYAMA , Tomokazu KOZAKAI , Osamu MATSUDA
IPC分类号： G21K5/04
CPC分类号： H01J27/024 , H01J27/26 , H01J37/08 , H01J37/3056 , H01J2237/0807 , H01J2237/182
摘要： Provided is a focused ion beam apparatus including a gas field ion source, the gas field ion source including: an emitter (41) for emitting an ion beam (1); an ion source chamber (40) for containing the emitter (41); a gas supply unit (46) for supplying nitrogen to the ion source chamber (40); an extracting electrode (49) to which a voltage for ionizing the nitrogen and for extracting nitrogen ions is applied; and a temperature control unit (34) for cooling the emitter (41).
摘要翻译：提供了一种包括气体离子源的聚焦离子束装置，该气体场离子源包括：用于发射离子束（1）的发射体（41）; 离子源室（40），用于容纳发射器（41）; 用于向离子源室（40）供给氮气的气体供给单元（46）; 提供用于电离氮并用于提取氮离子的电压的提取电极（49）; 和用于冷却发射器（41）的温度控制单元（34）。

3. 发明申请

US20110189593A1 Defect repair apparatus and method for EUV mask 有权
标题翻译： EUV面罩缺陷修复装置及方法
公开(公告)号：US20110189593A1
公开(公告)日：2011-08-04
申请号：US12931412
申请日：2011-01-28
申请人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
发明人： Takashi Ogawa , Hiroshi Oba , Fumio Aramaki , Anto Yasaka
IPC分类号： G03F1/00 , B05C11/00 , C23C16/455 , C23C16/48 , C23F1/08 , H01J37/285
CPC分类号： G21K1/062 , B82Y10/00 , G03F1/24 , G03F1/74 , G03F1/86 , H01J2237/31742
摘要： A defect repair apparatus for an EUV mask includes: a gas field ion source that generates a hydrogen ion beam;an ion optical system that scans and irradiates the hydrogen ion beam by focusing the hydrogen ion beam onto the EUV mask; a sample stage on which to place the EUV mask; a detector that detects secondary charged-particles generated from the EUV mask; and an image forming unit that forms an observation image of the EUV mask on the basis of an output signal from the detector.
摘要翻译：用于EUV掩模的缺陷修复装置包括：产生氢离子束的气体场离子源; 离子光学系统，其通过将氢离子束聚焦到EUV掩模上来扫描和照射氢离子束; 放置EUV面罩的样品台; 检测器，其检测从EUV掩模产生的二次带电粒子; 以及图像形成单元，其基于来自检测器的输出信号形成EUV掩模的观察图像。

4. 发明授权

US08963100B2 Nitrogen ions from a gas field ion source held at a pressure of 1.0 x 10^(-6) pa to 1.0 x 10^(-2) pa 有权
标题翻译：来自气田离子源的氮离子保持在1.0×10 ^（ - 6）Pa至1.0×10 ^（ - 2）Pa
公开(公告)号：US08963100B2
公开(公告)日：2015-02-24
申请号：US13654509
申请日：2012-10-18
申请人： Anto Yasaka , Fumio Aramaki , Yasuhiko Sugiyama , Tomokazu Kozakai , Osamu Matsuda
发明人： Anto Yasaka , Fumio Aramaki , Yasuhiko Sugiyama , Tomokazu Kozakai , Osamu Matsuda
IPC分类号： H01J37/08 , G21K5/04 , H01J37/305
CPC分类号： H01J27/024 , H01J27/26 , H01J37/08 , H01J37/3056 , H01J2237/0807 , H01J2237/182
摘要： A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter, and the gas supply unit maintains the pressure in the ion source chamber in the range 1.0×10−6 Pa to 1.0×10−2 Pa. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.
摘要翻译：聚焦离子束装置具有离子源室，其中设置有用于发射离子的发射极。气体供给单元向离子源室供给氮气，使得氮气吸附在发射体的表面，气体供给单元将离子源室内的压力维持在1.0×10 -6 Pa〜1.0× 10-2Pa。提取电极与发射极间隔开，电压施加到提取电极，使吸附的氮气离子化，并以离子束的形式提取氮离子。温度控制单元控制发射器的温度。

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