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1. 发明授权

US06169246A Photovoltaic devices comprising zinc stannate buffer layer and method for making 有权
标题翻译：包含锡酸锌缓冲层的光伏器件及其制造方法
公开(公告)号：US06169246A
公开(公告)日：2001-01-02
申请号：US09149430
申请日：1998-09-08
申请人： Xuanzhi Wu , Peter Sheldon , Timothy J. Coutts
发明人： Xuanzhi Wu , Peter Sheldon , Timothy J. Coutts
IPC分类号： H01L3100
CPC分类号： H01L31/073 , H01L31/022466 , H01L31/0392 , H01L31/03925 , H01L31/1884 , Y02E10/543
摘要： A photovoltaic device has a buffer layer zinc stannate Zn2SnO4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.
摘要翻译：光电器件具有设置在半导体结结构和透明导电氧化物（TCO）层之间的缓冲层锌锡酸盐Zn2SnO4，以防止通过薄的半导体层与TCO形成局部接合，以防止通过半导体的蚀刻晶界分流并且减轻应力并改善这些层之间的粘附。

2. 发明授权

US5922142A Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making 失效
标题翻译：包含锡酸镉透明导电膜的光伏器件及其制造方法
公开(公告)号：US5922142A
公开(公告)日：1999-07-13
申请号：US746798
申请日：1996-11-18
申请人： Xuanzhi Wu , Timothy J. Coutts , Peter Sheldon , Douglas H. Rose
发明人： Xuanzhi Wu , Timothy J. Coutts , Peter Sheldon , Douglas H. Rose
IPC分类号： C03C17/34 , C23C14/06 , C23C14/08 , C23C14/58 , H01B5/14 , H01L31/0224 , H01L31/04 , H01L31/073 , H01L31/18 , H01L31/00
CPC分类号： C23C14/5806 , C03C17/00 , C23C14/0629 , C23C14/086 , C23C14/5846 , H01L31/022466 , H01L31/073 , H01L31/1884 , Y02E10/543
摘要： A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.
摘要翻译：具有基板的光电器件，设置在作为前触点的所述基板上的Cd2SnO4层，设置在所述Cd2SnO4层上的两层或更多层半导体材料的薄膜和设置在所述半导体薄膜上的导电膜材料以形成与所述薄膜的后电接触。该器件通过将Cd 2 SnO 4层溅射到衬底上而形成，在半导体材料薄膜上沉积半导体材料薄膜到Cd2SnO4层上，并将导电膜沉积在薄膜上。

3. 发明授权

US06221495B1 Thin transparent conducting films of cadmium stannate 失效
标题翻译：锑酸锡薄透明导电薄膜
公开(公告)号：US06221495B1
公开(公告)日：2001-04-24
申请号：US08740347
申请日：1996-11-07
申请人： Xuanzhi Wu , Timothy J. Coutts
发明人： Xuanzhi Wu , Timothy J. Coutts
IPC分类号： B32B1500
CPC分类号： C23C14/5806 , C03C17/00 , C23C14/0629 , C23C14/086 , H01L31/073 , H01L31/1884 , Y02E10/543
摘要： A process for preparing thin Cd2SnO4 films. The process comprises the steps of RF sputter coating a Cd2SnO4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd2SnO4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd2SnO4 and CdS layers to a temperature sufficient to induce crystallization of the Cd2SnO4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd2SnO4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600° C., allowing the use of inexpensive soda lime glass substrates.
摘要翻译：制备薄Cd2SnO4薄膜的方法。该方法包括以下步骤：将Cd 2 SnO 4层RF溅射涂覆到第一衬底上; 用CdS层涂覆第二衬底; 使Cd2SnO4层与CdS层在无水和无氧环境中接触，并将第一和第二衬底以及Cd2SnO4和CdS层加热至足以使Cd2SnO4层结晶成均匀的单相尖晶石型结构，足以使该Cd2SnO4层在该温度下完全结晶; 将第一和第二衬底冷却至室温; 以及将第一和第二基板和层彼此分离。该过程可以在低于600℃的温度下进行，允许使用廉价的钠钙玻璃基材。

4. 发明授权

US6137048A Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby 有权
标题翻译：制造多晶半导体薄膜太阳能电池的方法以及由此制造的电池
公开(公告)号：US6137048A
公开(公告)日：2000-10-24
申请号：US218206
申请日：1998-12-22
申请人： Xuanzhi Wu , Peter Sheldon
发明人： Xuanzhi Wu , Peter Sheldon
IPC分类号： H01L31/073 , H01L31/18 , H01L31/00
CPC分类号： H01L31/073 , H01L31/1828 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.
摘要翻译：用于制造薄膜半导体异质结光伏器件的新颖简化方法包括以下步骤：通过在环境温度下的射频溅射，在透明衬底上沉积锡酸镉层和一层锡酸锌层，然后沉积不同的半导体层如硫化镉和碲化镉，以及将锡酸镉转化为尖晶石晶体结构的基本单相材料的热处理。优选地，硫化镉层也通过射频溅射在环境温度下沉积，并且碲化镉层通过在升高的温度下通过紧密空间升华沉积，以有效地将无定形镉锡酸盐转化为具有单相尖晶石结构的多晶锡酸锡。

5. 发明申请

US20050009228A1 Semiconductor device with higher oxygen (02) concentration within window layers and method for making 审中-公开
标题翻译：在窗口层内具有较高氧（O 2）浓度的半导体器件及其制造方法
公开(公告)号：US20050009228A1
公开(公告)日：2005-01-13
申请号：US10499212
申请日：2001-12-13
申请人： Xuanzhi Wu , Ramesh Dhere
发明人： Xuanzhi Wu , Ramesh Dhere
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/0296 , H01L31/0336 , H01L31/073 , H01L31/0749 , H01L31/18
CPC分类号： H01L31/0749 , C23C14/0036 , C23C14/0629 , H01L31/022466 , H01L31/0296 , H01L31/02966 , H01L31/073 , H01L31/1828 , H01L31/1832 , H01L31/1836 , H01L31/1884 , Y02E10/541 , Y02E10/543
摘要： A method for making a heterojunction photovoltaic device (200) is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The method and apparatus include an improved window layer (230) having an increased oxygen (140) concentration with higher optical bandgap and photo to dark conductivity ratio. The improved photovoltaic device (200) is made using a deposition method which incorporates the use of a gas mixture of an inert gas (115) and a predetermined amount of oxygen (140), deposited at or near room temperature. Window layers contemplated by the present invention include, but are not limited to, cadmium sulfide (CdS) and various alloys of zinc cadmium sulfide (ZnxCd1-xS). To further increase the efficiency of the resultant photovoltaic device (200), deposition parameters are controlled and monitored to improve the deposited window layer (230).
摘要翻译：提供了一种用于制造异质结光伏器件（200）的方法，用于将太阳辐射转换成光电流和光电压，效率提高。所述方法和装置包括具有增加的氧（140）浓度的改进的窗口层（230），具有较高的光学带隙和光致暗电导率。改进的光伏器件（200）使用沉积方法制造，该沉积方法结合使用在室温或室温下沉积的惰性气体（115）和预定量的氧（140）的气体混合物。本发明涵盖的窗口层包括但不限于硫化镉（CdS）和硫化镉锌（ZnxCd1-xS）的各种合金。为了进一步提高所得光伏器件（200）的效率，控制和监测沉积参数以改善沉积窗口层（230）。

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