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1. 发明申请

US20050009228A1 Semiconductor device with higher oxygen (02) concentration within window layers and method for making 审中-公开
标题翻译：在窗口层内具有较高氧（O 2）浓度的半导体器件及其制造方法
公开(公告)号：US20050009228A1
公开(公告)日：2005-01-13
申请号：US10499212
申请日：2001-12-13
申请人： Xuanzhi Wu , Ramesh Dhere
发明人： Xuanzhi Wu , Ramesh Dhere
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/0296 , H01L31/0336 , H01L31/073 , H01L31/0749 , H01L31/18
CPC分类号： H01L31/0749 , C23C14/0036 , C23C14/0629 , H01L31/022466 , H01L31/0296 , H01L31/02966 , H01L31/073 , H01L31/1828 , H01L31/1832 , H01L31/1836 , H01L31/1884 , Y02E10/541 , Y02E10/543
摘要： A method for making a heterojunction photovoltaic device (200) is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The method and apparatus include an improved window layer (230) having an increased oxygen (140) concentration with higher optical bandgap and photo to dark conductivity ratio. The improved photovoltaic device (200) is made using a deposition method which incorporates the use of a gas mixture of an inert gas (115) and a predetermined amount of oxygen (140), deposited at or near room temperature. Window layers contemplated by the present invention include, but are not limited to, cadmium sulfide (CdS) and various alloys of zinc cadmium sulfide (ZnxCd1-xS). To further increase the efficiency of the resultant photovoltaic device (200), deposition parameters are controlled and monitored to improve the deposited window layer (230).
摘要翻译：提供了一种用于制造异质结光伏器件（200）的方法，用于将太阳辐射转换成光电流和光电压，效率提高。所述方法和装置包括具有增加的氧（140）浓度的改进的窗口层（230），具有较高的光学带隙和光致暗电导率。改进的光伏器件（200）使用沉积方法制造，该沉积方法结合使用在室温或室温下沉积的惰性气体（115）和预定量的氧（140）的气体混合物。本发明涵盖的窗口层包括但不限于硫化镉（CdS）和硫化镉锌（ZnxCd1-xS）的各种合金。为了进一步提高所得光伏器件（200）的效率，控制和监测沉积参数以改善沉积窗口层（230）。

2. 发明申请

US20130327398A1 Thin-Film Photovoltaic Devices and Methods of Manufacture 审中-公开
标题翻译：薄膜光伏器件及其制造方法
公开(公告)号：US20130327398A1
公开(公告)日：2013-12-12
申请号：US14001607
申请日：2012-02-27
申请人： Ramesh Dhere , Joel Duenow , Timothy A. Gessert
发明人： Ramesh Dhere , Joel Duenow , Timothy A. Gessert
IPC分类号： H01L31/073
CPC分类号： H01L31/073 , H01L31/0749 , H01L31/1828 , Y02E10/541 , Y02E10/543
摘要： Improved thin-film photovoltaic devices and methods of manufacturing such devices are described. Embodiments include a substrate-configured thin-film PV device (200) having a photo-absorbing semiconductor layer (230) and a window layer (240). Embodiments include devices having a CdTe photo-absorbing semiconductor layer, a CdS or CdS:In window layer, and an n-p junction residing at or proximate an interface of the photo-absorbing semiconductor and window layers. Variations include methods of manufacture wherein i) O2 is excluded from an ambient environment during deposition of the CdTe layer (102), ii) O2 is included in an ambient environment during CdCl2 treatment (103), iii) O2 is included in an ambient environment during deposition of a CdS or CdS:In layer (104), or iv) a medium-temperature anneal (MTA) having an anneal temperature of 300° C. or less is performed (105) after deposition of the CdS layer.
摘要翻译：描述了改进的薄膜光伏器件及其制造方法。实施例包括具有光吸收半导体层（230）和窗口层（240）的基板构造的薄膜PV器件（200）。实施例包括具有CdTe光吸收半导体层，CdS或CdS：窗口层以及驻留在光吸收半导体和窗口层的界面处或附近的n-p结的器件。变化包括制造方法，其中i）在CdTe层（102）沉积期间从环境环境中排除O 2，ii）在CdCl 2处理（103）期间，O 2包含在周围环境中，iii）在环境环境中包括O 2 在沉积CdS或CdS时：在层（104）中，或iv）在沉积CdS层之后执行退火温度为300℃或更低的中温退火（MTA）（105）。

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