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1. 发明授权

US5524574A Control of oxygen concentration in single crystal pulled up from melt containing Group-V element 失效
标题翻译：控制从含有V族元素的熔体中提取的单晶中的氧浓度
公开(公告)号：US5524574A
公开(公告)日：1996-06-11
申请号：US291833
申请日：1994-08-17
申请人： Xingming Huang , Kouji Izunome , Kazutaka Terashima , Yutaka Shiraishi , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Xingming Huang , Kouji Izunome , Kazutaka Terashima , Yutaka Shiraishi , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/02 , C30B15/04 , C30B15/20
CPC分类号： C30B29/06 , C30B15/02 , C30B15/04 , C30B15/206 , Y10S117/916
摘要： The amount of Group-V element included in a melt 6 has the close relationship with the oxygen concentration of the melt 6. This relationship is utilized for controlling the oxygen concentration of a single crystal 8 at a high level. The content of Group-V element is calculated from the weight of the melt 6 gauged by a gravimeter 11 and compared with a preset value in a control unit 12. When the calculated content is smaller than the preset value, the control signal to additionally supply Group-V element to the melt 6 is outputted from the control unit 12 to a feeder 14. When the calculated content is larger than the preset value, the control signal to supply a raw material to the melt 6 is outputted to another feeder 13.
摘要翻译：包含在熔体6中的V族元素的量与熔体6的氧浓度具有密切的关系。该关系用于高水平地控制单晶8的氧浓度。 Group-V元件的含量由重力仪11测量的熔体6的重量计算，并与控制单元12中的预设值进行比较。当计算的内容小于预设值时，控制信号附加地供应熔体6的V族元素从控制单元12输出到进料器14.当计算出的含量大于预设值时，向熔体6供应原料的控制信号被输出到另一个进料器13。

2. 发明授权

US5476064A Pull method for growth of single crystal using density detector and apparatus therefor 失效
标题翻译：使用密度检测器及其设备的拉长单晶生长方法
公开(公告)号：US5476064A
公开(公告)日：1995-12-19
申请号：US214496
申请日：1994-03-18
申请人： Hitoshi Sasaki , Eiji Tokizaki , Kazutaka Terashima , Akira Nagashima , Shigeyuki Kimura
发明人： Hitoshi Sasaki , Eiji Tokizaki , Kazutaka Terashima , Akira Nagashima , Shigeyuki Kimura
IPC分类号： C30B15/14 , C30B15/28 , C30B15/20
CPC分类号： C30B15/28 , C30B15/14 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032
摘要： The density of a melt precisely represents the stability of the melt, so that the initiation of pulling-up operation can be determined on the basis of the changing rate of the density. The pulling-up operation may be started when the density becomes constant, or when the changing rate of the density with respect to the temperature becomes smaller. Since the melt or clusters do not include different minute structures, an obtained single crystal is of high quality free from minute faults or dislocations.
摘要翻译：熔体的密度精确地表示熔体的稳定性，从而可以基于密度的变化率来确定上拉操作的开始。当密度变得恒定时，或当密度相对于温度的变化率变小时，可以启动拉起操作。由于熔体或簇不包括不同的微小结构，所获得的单晶质量高，无微小缺陷或位错。

3. 发明授权

US5410914A Measuring device for density of liquid or high-temperature melt without influence of surface tension 失效
标题翻译：用于液体或高温熔体密度的测量装置，而不影响表面张力
公开(公告)号：US5410914A
公开(公告)日：1995-05-02
申请号：US137764
申请日：1993-10-19
申请人： Hitoshi Sasaki , Eiji Tokizaki , Kazutaka Terashima
发明人： Hitoshi Sasaki , Eiji Tokizaki , Kazutaka Terashima
IPC分类号： G01N9/18 , G01N9/08 , G01N9/10
CPC分类号： G01N9/08
摘要： The measuring device has bobs 10, 17 suspended from a weight 12 with wires 11, 16. The hook 13 of the weight 12 is hung from a suspensor thread 15 extending downwards from a balance 14. The weight 12 may be omitted by using the upper bob 10 for dead weight. The bobs 10, 17 and the wires 11, 16 may be coated with a coating layer unreactive to the melt 19 whose density is to be measured. The weights of the measuring device is measured by the balance 14 under the first condition that the lower bob 17 is immersed in the liquid 19 and the second condition that the bobs 10, 17 are both immersed in the liquid 19. The density of the liquid 19 is calculated from the two measured values without the influence of the surface tension of the liquid 19 applied to the wires 11, 16.
摘要翻译：测量装置具有从具有电线11,16的重物12悬挂的凸块10,17.重物12的钩13悬挂在从平衡部14向下延伸的悬吊螺纹15上。通过使用上部鲍勃10为重量。杆10,17和电线11,16可以涂覆有与对其密度进行测量的熔体19不起反应的涂层。测量装置的重量是在第一个条件下由下摆锤17浸入液体19中的第一个条件和第二条件使第十条17都浸没在液体19中的第一个条件下由余量14测量。液体的密度 19由两个测量值计算，而不受施加到电线11,16的液体19的表面张力的影响。

4. 发明授权

US5704974A Growth of silicon crystal from melt having extraordinary eddy flows on its surface 失效
标题翻译：来自熔体的硅晶体在其表面上生长具有非凡的涡流
公开(公告)号：US5704974A
公开(公告)日：1998-01-06
申请号：US620873
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/30
摘要： When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.
摘要翻译：当将Si单晶8从容纳在坩埚2中的熔融物6拉出时，根据表面的熔体的温度分布来判断在熔体6中产生的涡流的状态。根据判断结果，将气体，即N2，Xe或Kr，其引起熔体6的密度的异常偏差加到大气中，以保持涡流处于不稳定状态。在来自熔融体的晶体生长的情况下，所述气体的效果是典型的，在该熔体中添加了具有抑制密度特别偏差的作用的诸如Ca，Sb，Al，As或In的掺杂剂。由于单晶被从保持在表面的温度控制条件下的熔体中拉出，所以杂质分布和氧分布沿晶体生长方向均匀。以这种方式获得的单晶具有高度稳定的质量。

5. 发明授权

US5700320A Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction 失效
标题翻译：长度方向或径向均匀杂质分布的硅单晶的生长
公开(公告)号：US5700320A
公开(公告)日：1997-12-23
申请号：US620391
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/04
CPC分类号： C30B29/06 , C30B15/00
摘要： When a B or P-doped Si single crystal is pulled up from a B or P-doped melt by the Czochralski method, an element such as Ga, Sb or In having the effect to reduce the heat expansion coefficient of said melt at a temperature near the melting point is added to said melt. The additive element stabilizes the temperature condition of crystal growth so as to control the generation of eddy flows just below the interface of crystal growth. When a Ga or Sb-doped Si single crystal is pulled up from a Ga or Sb-doped melt, an element such as B or P having the effect to increase the heat expansion coefficient of said melt at a temperature near the melting point is added. The agitation of the melt just below the interface of crystal growth is accelerated by the addition of B or P, so as to assure the growth of a Si single crystal from the melt having impurity distribution made uniform along the radial direction. Accordingly, a Si single crystal is formed having a uniform impurity distribution along its lengthwise or radial direction.
摘要翻译：当通过Czochralski方法从B或P掺杂的熔体中提取B或P掺杂的Si单晶时，可以使用诸如Ga，Sb或In的元素，其具有在温度下降低所述熔体的热膨胀系数在熔点附近加入熔融物。添加元素稳定了晶体生长的温度条件，从而控制刚好低于晶体生长界面的涡流的产生。当从Ga或Sb掺杂的熔体中提取Ga或Sb掺杂的Si单晶时，添加诸如B或P的元素，其在熔点附近的温度下增加所述熔体的热膨胀系数，。通过添加B或P来促进刚好低于晶体生长界面的熔体的搅拌，以确保Si单晶从具有沿径向方向均匀的杂质分布的熔体生长。因此，形成沿着其长度方向或径向方向具有均匀杂质分布的Si单晶。

6. 发明授权

US5683504A Growth of silicon single crystal 失效
标题翻译：硅单晶的生长
公开(公告)号：US5683504A
公开(公告)日：1997-11-04
申请号：US621054
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/20 , C30B15/00 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/00 , Y10S117/901
摘要： When a single crystal is pulled up from a melt, the difference .DELTA.T between temperatures at the bottom of a crucible and at the interface of crystal growth is controlled so as to hold the Rayleigh constant defined by the formula of: R a=g.multidot..beta..multidot..DELTA.T.multidot.L/.kappa..multidot..nu. within the range of 5.times.10.sup.5 -4.times.10.sup.7, wherein g represents the acceleration of gravity, .beta. the volumetric expansion coefficient of the melt, L the depth of the melt, .kappa. thermal diffusivity and .nu. the kinematic viscocity. Since the convection mode of the melt at the interface of crystal growth is constantly held in the region of soft turbulence, a single crystal is grown under the stabilized temperature condition without the transfer of the impurity distribution in the melt into the growing single crystal.
摘要翻译：当从熔体中拉出单晶时，控制坩埚底部温度和晶体生长界面处的差ΔTA，以保持由以下公式定义的瑞利常数：R a = g xβ x DELTA TxL / kappa x nu在5×10 5 -4×10 7的范围内，其中g表示重力的加速度，β表示熔体的体积膨胀系数，L表示熔体的深度，κ热扩散率和nu的运动粘度。由于晶体生长界面处的熔体的对流模式不断地保持在软湍流区域，所以在稳定的温度条件下生长单晶，而不会将熔体中的杂质分布转移到生长的单晶中。

7. 发明申请

US20160082753A1 IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD 有权
标题翻译：图像形成装置和图像形成方法
公开(公告)号：US20160082753A1
公开(公告)日：2016-03-24
申请号：US14848210
申请日：2015-09-08
申请人： Hitoshi Sasaki , Yuuichiroh Tsujiguchi , Takuji Kawaguchi , Shigeru Yoshigai , Keizoh Shigaki
发明人： Hitoshi Sasaki , Yuuichiroh Tsujiguchi , Takuji Kawaguchi , Shigeru Yoshigai , Keizoh Shigaki
IPC分类号： B41J13/00
CPC分类号： B41J13/0009 , B41J3/60 , B41J13/0045
摘要： An image forming apparatus includes a conveyance unit configured to convey a recording medium; a reversing unit configured to reverse front and back sides of the recording medium; a recording head configured to reciprocatingly scan to form a first image on a first side of the recording medium, which is reciprocatingly conveyed by the conveyance unit at a first conveyance speed V1, and a second image on a second side of the recording medium, which is conveyed at a second conveyance speed V2 and ejected, in a case of performing a double-sided printing; and a control unit configured to control the first conveyance speed V1 and the second conveyance speed V2 to satisfy a relation V2≦W/t
摘要翻译：一种图像形成装置，包括：传送单元，被配置为传送记录介质; 反转单元，其构造成反转记录介质的前侧和后侧; 记录头，被配置为在记录介质的第一侧上以第一传送速度V1和第二图像在记录介质的第二面上往复扫描以形成由传送单元往复传送的第一图像，在执行双面打印的情况下以第二传送速度V2传送并被弹出; 以及控制单元，被配置为控制第一输送速度V1和第二输送速度V2以满足关系V2＆lt; nlE; W / t

8. 发明授权

US09028797B2 Composite body for antigen or drug delivery 有权
标题翻译：用于抗原或药物递送的复合体
公开(公告)号：US09028797B2
公开(公告)日：2015-05-12
申请号：US13581194
申请日：2011-02-24
申请人： Hitoshi Sasaki , Tomoaki Kurosaki , Takashi Kitahara , Hideto To , Katsuyuki Yui , Kenji Hirayama , Kouichi Morita , Takahiro Mukai , Yasuhiro Magata , Mikako Ogawa , Kohei Sano
发明人： Hitoshi Sasaki , Tomoaki Kurosaki , Takashi Kitahara , Hideto To , Katsuyuki Yui , Kenji Hirayama , Kouichi Morita , Takahiro Mukai , Yasuhiro Magata , Mikako Ogawa , Kohei Sano
IPC分类号： A61K49/00 , A61K51/06 , A61K31/711 , A61K31/713 , A61K39/00 , A61K39/015 , A61K39/145 , A61K39/39 , A61K47/48
CPC分类号： A61K49/0002 , A61K31/711 , A61K31/713 , A61K39/0011 , A61K39/015 , A61K39/12 , A61K39/145 , A61K39/39 , A61K47/59 , A61K47/593 , A61K47/645 , A61K47/6455 , A61K51/065 , A61K2039/5252 , A61K2039/55555 , C12N2760/16034
摘要： The invention provides an antigen or drug delivery complex containing a complex of an antigen or drug and a cationic molecule, and an anionic molecule encapsulating the same. The antigen or drug delivery complex can be used as a main component of a drug delivery system that delivers various antigens and drugs to a particular cell or organ.
摘要翻译：本发明提供了包含抗原或药物和阳离子分子的复合物的抗原或药物递送复合物，以及包封其的阴离子分子。抗原或药物递送复合物可用作药物递送系统的主要成分，其将各种抗原和药物递送至特定的细胞或器官。

9. 发明申请

US20120016669A1 APPARATUS AND METHOD FOR VOICE PROCESSING AND TELEPHONE APPARATUS 有权
标题翻译：用于语音处理和电话设备的装置和方法
公开(公告)号：US20120016669A1
公开(公告)日：2012-01-19
申请号：US13072992
申请日：2011-03-28
申请人： Kaori Endo , Takeshi Otani , Hitoshi Sasaki , Mitsuyoshi Matsubara , Rika Nishiike , Kaoru Chujo
发明人： Kaori Endo , Takeshi Otani , Hitoshi Sasaki , Mitsuyoshi Matsubara , Rika Nishiike , Kaoru Chujo
IPC分类号： G10L19/14
CPC分类号： G10L21/038 , G10L21/02 , G10L21/0208 , G10L21/0232
摘要： A voice processing apparatus includes a voice signal acquiring unit that acquires a voice signal converted to plural frequency bands from an input signal having a narrowed band; an expanding unit that generates based on a narrowband component of the voice signal acquired by the voice signal acquiring unit, an expansion band component expanding the band of the voice signal; a correcting unit that corrects the power of the expansion band component by a correction amount determined based on a noise component included in the voice signal acquired by the voice signal acquiring unit; and an output unit that outputs the voice signal of which the band has been expanded based on the expansion band component corrected by the correcting unit and based on the narrowband component of the voice signal acquired by the voice signal acquiring unit.
摘要翻译：语音处理装置包括语音信号获取单元，其从具有变窄频带的输入信号中获取被转换成多个频带的语音信号; 扩展单元，其基于由语音信号获取单元获取的语音信号的窄带分量生成扩展频带分量，扩展语音信号的频带; 校正单元，其通过基于由语音信号获取单元获取的语音信号中包括的噪声分量确定的校正量校正扩展频带分量的功率; 以及输出单元，其基于由所述校正单元校正的所述扩展频带分量，并且基于由所述语音信号获取单元获取的所述语音信号的窄带分量来输出已经扩展了所述频带的语音信号。

10. 发明授权

US07679104B2 Vertical type semiconductor device and manufacturing method of the device 有权
标题翻译：垂直型半导体器件及其制造方法
公开(公告)号：US07679104B2
公开(公告)日：2010-03-16
申请号：US11937090
申请日：2007-11-08
申请人： Yoshihiro Sato , Sadahiro Kato , Masayuki Iwami , Hitoshi Sasaki , Shinya Ootomo , Yuki Niiyama
发明人： Yoshihiro Sato , Sadahiro Kato , Masayuki Iwami , Hitoshi Sasaki , Shinya Ootomo , Yuki Niiyama
IPC分类号： H01L29/267
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/76895 , H01L29/0657 , H01L29/2003 , H01L29/41 , H01L29/417 , H01L29/41766 , H01L29/66143 , H01L29/66727 , H01L29/66734 , H01L29/7813 , H01L29/872
摘要： A vertical semiconductor element comprises: an electro-conductive substrate; a GaN layer, as a nitride compound semiconductor layer, which is selectively grown as a convex shape on one surface of the electro-conductive substrate through a buffer layer; a source electrode as a first electrode formed on the GaN layer; and a drain electrode as a second electrode formed on another surface of the electro-conductive substrate.
摘要翻译：垂直半导体元件包括：导电基板; 作为氮化物半导体层的GaN层，其通过缓冲层在导电性基板的一个表面上选择性地生长为凸形; 源极，形成在GaN层上的第一电极; 以及作为形成在导电基板的另一表面上的第二电极的漏电极。

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