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1. 发明授权

US5700320A Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction 失效
标题翻译：长度方向或径向均匀杂质分布的硅单晶的生长
公开(公告)号：US5700320A
公开(公告)日：1997-12-23
申请号：US620391
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/04
CPC分类号： C30B29/06 , C30B15/00
摘要： When a B or P-doped Si single crystal is pulled up from a B or P-doped melt by the Czochralski method, an element such as Ga, Sb or In having the effect to reduce the heat expansion coefficient of said melt at a temperature near the melting point is added to said melt. The additive element stabilizes the temperature condition of crystal growth so as to control the generation of eddy flows just below the interface of crystal growth. When a Ga or Sb-doped Si single crystal is pulled up from a Ga or Sb-doped melt, an element such as B or P having the effect to increase the heat expansion coefficient of said melt at a temperature near the melting point is added. The agitation of the melt just below the interface of crystal growth is accelerated by the addition of B or P, so as to assure the growth of a Si single crystal from the melt having impurity distribution made uniform along the radial direction. Accordingly, a Si single crystal is formed having a uniform impurity distribution along its lengthwise or radial direction.
摘要翻译：当通过Czochralski方法从B或P掺杂的熔体中提取B或P掺杂的Si单晶时，可以使用诸如Ga，Sb或In的元素，其具有在温度下降低所述熔体的热膨胀系数在熔点附近加入熔融物。添加元素稳定了晶体生长的温度条件，从而控制刚好低于晶体生长界面的涡流的产生。当从Ga或Sb掺杂的熔体中提取Ga或Sb掺杂的Si单晶时，添加诸如B或P的元素，其在熔点附近的温度下增加所述熔体的热膨胀系数，。通过添加B或P来促进刚好低于晶体生长界面的熔体的搅拌，以确保Si单晶从具有沿径向方向均匀的杂质分布的熔体生长。因此，形成沿着其长度方向或径向方向具有均匀杂质分布的Si单晶。

2. 发明授权

US5683504A Growth of silicon single crystal 失效
标题翻译：硅单晶的生长
公开(公告)号：US5683504A
公开(公告)日：1997-11-04
申请号：US621054
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/20 , C30B15/00 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/00 , Y10S117/901
摘要： When a single crystal is pulled up from a melt, the difference .DELTA.T between temperatures at the bottom of a crucible and at the interface of crystal growth is controlled so as to hold the Rayleigh constant defined by the formula of: R a=g.multidot..beta..multidot..DELTA.T.multidot.L/.kappa..multidot..nu. within the range of 5.times.10.sup.5 -4.times.10.sup.7, wherein g represents the acceleration of gravity, .beta. the volumetric expansion coefficient of the melt, L the depth of the melt, .kappa. thermal diffusivity and .nu. the kinematic viscocity. Since the convection mode of the melt at the interface of crystal growth is constantly held in the region of soft turbulence, a single crystal is grown under the stabilized temperature condition without the transfer of the impurity distribution in the melt into the growing single crystal.
摘要翻译：当从熔体中拉出单晶时，控制坩埚底部温度和晶体生长界面处的差ΔTA，以保持由以下公式定义的瑞利常数：R a = g xβ x DELTA TxL / kappa x nu在5×10 5 -4×10 7的范围内，其中g表示重力的加速度，β表示熔体的体积膨胀系数，L表示熔体的深度，κ热扩散率和nu的运动粘度。由于晶体生长界面处的熔体的对流模式不断地保持在软湍流区域，所以在稳定的温度条件下生长单晶，而不会将熔体中的杂质分布转移到生长的单晶中。

3. 发明授权

US5704974A Growth of silicon crystal from melt having extraordinary eddy flows on its surface 失效
标题翻译：来自熔体的硅晶体在其表面上生长具有非凡的涡流
公开(公告)号：US5704974A
公开(公告)日：1998-01-06
申请号：US620873
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/30
摘要： When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.
摘要翻译：当将Si单晶8从容纳在坩埚2中的熔融物6拉出时，根据表面的熔体的温度分布来判断在熔体6中产生的涡流的状态。根据判断结果，将气体，即N2，Xe或Kr，其引起熔体6的密度的异常偏差加到大气中，以保持涡流处于不稳定状态。在来自熔融体的晶体生长的情况下，所述气体的效果是典型的，在该熔体中添加了具有抑制密度特别偏差的作用的诸如Ca，Sb，Al，As或In的掺杂剂。由于单晶被从保持在表面的温度控制条件下的熔体中拉出，所以杂质分布和氧分布沿晶体生长方向均匀。以这种方式获得的单晶具有高度稳定的质量。

4. 发明授权

US5477805A Preparation of silicon melt for use in pull method of manufacturing single crystal 失效
标题翻译：制备用于制造单晶拉制法的硅熔体
公开(公告)号：US5477805A
公开(公告)日：1995-12-26
申请号：US350533
申请日：1994-12-07
申请人： Koji Izunome , Xin ming Huang , Kazutaka Terashima , Shigeyuki Kimura
发明人： Koji Izunome , Xin ming Huang , Kazutaka Terashima , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/20
CPC分类号： C30B29/06 , C30B15/00
摘要： A Si material mixed with Group-V element is melted in a crucible, and then held in a chamber filled with a rare gas at atmospheric pressure of 100 torr. or higher. A rare gas, e.g. Ar, Kr, Xe or Rn, having a large mass or the mixture of Ar with Kr, Xe or Rn may be used as atmospheric gas. The high-pressure atmosphere suppress the evaporation of oxides of Group-V elements from the Si melt, so that the Si melt can be maintained at a high oxygen concentration under a stable condition until the start of pulling operation.
摘要翻译：将与V族元素混合的Si材料在坩埚中熔化，然后在100托的大气压下保持在填充有稀有气体的室中。或更高。稀有气体，例如具有大质量的Ar，Kr，Xe或Rn，Ar与Kr，Xe或Rn的混合物可以用作气氛。高压气氛抑制了来自Si熔体的V族元素的氧化物的蒸发，使得在稳定的条件下，Si熔体可以保持在高氧浓度，直到开始拉动操作。

5. 发明授权

US5476064A Pull method for growth of single crystal using density detector and apparatus therefor 失效
标题翻译：使用密度检测器及其设备的拉长单晶生长方法
公开(公告)号：US5476064A
公开(公告)日：1995-12-19
申请号：US214496
申请日：1994-03-18
申请人： Hitoshi Sasaki , Eiji Tokizaki , Kazutaka Terashima , Akira Nagashima , Shigeyuki Kimura
发明人： Hitoshi Sasaki , Eiji Tokizaki , Kazutaka Terashima , Akira Nagashima , Shigeyuki Kimura
IPC分类号： C30B15/14 , C30B15/28 , C30B15/20
CPC分类号： C30B15/28 , C30B15/14 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032
摘要： The density of a melt precisely represents the stability of the melt, so that the initiation of pulling-up operation can be determined on the basis of the changing rate of the density. The pulling-up operation may be started when the density becomes constant, or when the changing rate of the density with respect to the temperature becomes smaller. Since the melt or clusters do not include different minute structures, an obtained single crystal is of high quality free from minute faults or dislocations.
摘要翻译：熔体的密度精确地表示熔体的稳定性，从而可以基于密度的变化率来确定上拉操作的开始。当密度变得恒定时，或当密度相对于温度的变化率变小时，可以启动拉起操作。由于熔体或簇不包括不同的微小结构，所获得的单晶质量高，无微小缺陷或位错。

6. 发明授权

US5524574A Control of oxygen concentration in single crystal pulled up from melt containing Group-V element 失效
标题翻译：控制从含有V族元素的熔体中提取的单晶中的氧浓度
公开(公告)号：US5524574A
公开(公告)日：1996-06-11
申请号：US291833
申请日：1994-08-17
申请人： Xingming Huang , Kouji Izunome , Kazutaka Terashima , Yutaka Shiraishi , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Xingming Huang , Kouji Izunome , Kazutaka Terashima , Yutaka Shiraishi , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/02 , C30B15/04 , C30B15/20
CPC分类号： C30B29/06 , C30B15/02 , C30B15/04 , C30B15/206 , Y10S117/916
摘要： The amount of Group-V element included in a melt 6 has the close relationship with the oxygen concentration of the melt 6. This relationship is utilized for controlling the oxygen concentration of a single crystal 8 at a high level. The content of Group-V element is calculated from the weight of the melt 6 gauged by a gravimeter 11 and compared with a preset value in a control unit 12. When the calculated content is smaller than the preset value, the control signal to additionally supply Group-V element to the melt 6 is outputted from the control unit 12 to a feeder 14. When the calculated content is larger than the preset value, the control signal to supply a raw material to the melt 6 is outputted to another feeder 13.
摘要翻译：包含在熔体6中的V族元素的量与熔体6的氧浓度具有密切的关系。该关系用于高水平地控制单晶8的氧浓度。 Group-V元件的含量由重力仪11测量的熔体6的重量计算，并与控制单元12中的预设值进行比较。当计算的内容小于预设值时，控制信号附加地供应熔体6的V族元素从控制单元12输出到进料器14.当计算出的含量大于预设值时，向熔体6供应原料的控制信号被输出到另一个进料器13。

7. 发明授权

US5904912A Iron-doped lithium niobate single crystal, method for heat treatment thereof and hologram-application element containing the single crystal 失效
标题翻译：铁掺杂铌酸锂单晶，其热处理方法和含有单晶的全息应用元件
公开(公告)号：US5904912A
公开(公告)日：1999-05-18
申请号：US778273
申请日：1997-01-02
申请人： Kenji Kitamura , Yasunori Furukawa , Nobuo Ii , Shigeyuki Kimura
发明人： Kenji Kitamura , Yasunori Furukawa , Nobuo Ii , Shigeyuki Kimura
IPC分类号： G02B5/18 , C30B15/00 , C30B29/30 , C30B33/00 , G02B5/32 , G02F1/03 , G02F1/35 , G02F1/355 , C01G49/00 , C01G33/00 , C01D15/00 , C30B29/00
CPC分类号： C30B15/00 , C30B29/30 , C30B33/00 , G02F1/0338 , G02F2202/13 , G02F2202/20
摘要： An iron-doped lithium niobate single crystal having a molar fraction of Li.sub.2 O/(Nb.sub.2 O.sub.5 +Li.sub.2 O) of from 0.495 to 0.50 which is closer to the stoichiometrical composition than a usual congruent composition, and a high diffraction efficiency by a two light wave mixture.
摘要翻译：掺有铌酸锂的铌酸锂单晶，其Li2O /（Nb2O5 + Li2O）的摩尔分数为0.495〜0.50，比通常的一致组合物更接近化学计量组成，并且通过两种光波混合物具有高的衍射效率。

8. 发明授权

US08273149B2 Method for producing nanometer-size wires and nanometer-size wire 失效
标题翻译：制造纳米尺寸线和纳米线的方法
公开(公告)号：US08273149B2
公开(公告)日：2012-09-25
申请号：US12308728
申请日：2007-06-20
申请人： Yasuhiko Shimotsuma , Kiyotaka Miura , Kazuyuki Hirao , Mitsuo Kawasaki , Osamu Kajita , Takafumi Iwamoto , Eitaro Yasuda , Shigeyuki Kimura
发明人： Yasuhiko Shimotsuma , Kiyotaka Miura , Kazuyuki Hirao , Mitsuo Kawasaki , Osamu Kajita , Takafumi Iwamoto , Eitaro Yasuda , Shigeyuki Kimura
IPC分类号： B22F9/04
CPC分类号： B22F9/04 , B22F1/0025 , B22F2998/00 , B82Y30/00 , Y10T428/2913 , B22F1/0055 , B22F1/0018
摘要： The present invention provides a nanowire production method that is simpler than conventional nanowire production methods, and that makes it easier to control the size and shape of the nanowires by using a technique completely different from the conventional ones. A powder particle containing a metal element is divided into nanometer-size wires containing the metal element by irradiating a suspension of the powder particles with a femtosecond laser. The present invention also makes it possible to divide the nanometer-size wires thus formed into nanometer-size particles containing the metal element by irradiating further the nanometer-size wires with the femtosecond laser.
摘要翻译：本发明提供了一种比传统纳米线生产方法简单的纳米线制造方法，并且通过使用与常规纳米线完全不同的技术，更容易控制纳米线的尺寸和形状。通过用飞秒激光照射粉末颗粒的悬浮液，将含有金属元素的粉末颗粒分成含有金属元素的纳米线。本发明还可以通过用飞秒激光进一步照射纳米尺寸的线将由此形成的纳米尺寸的线分割成包含金属元素的纳米尺寸的颗粒。

9. 发明申请

US20060131493A1 Near field analysis apparatus 有权
标题翻译：近场分析仪
公开(公告)号：US20060131493A1
公开(公告)日：2006-06-22
申请号：US11316402
申请日：2005-12-22
申请人： Yoshihito Narita , Shigeyuki Kimura , Fuminori Sato , Atsushi Yamada
发明人： Yoshihito Narita , Shigeyuki Kimura , Fuminori Sato , Atsushi Yamada
IPC分类号： H01J40/14
CPC分类号： G01Q60/22
摘要： A near field analysis apparatus comprising: an irradiation optical system comprising an irradiation-side adjustable optical system for adjusting the position or angle of an optical axis thereof, and irradiating irradiation-side guide light onto an adjustment surface via the irradiation-side adjustable optical system; a light collecting optical system comprising a light-collection-side adjustable optical system for adjusting the position or angle of an optical axis thereof, and irradiating light-collection-side guide light onto the adjustment surface via the light-collection-side adjustable optical system; an irradiation-side adjustment device for adjusting the position or angle of the irradiation-side adjustable optical system such that the spots of the guide light, which are observed at the adjustment surface, match; and a light-collection-side adjustment device for adjusting the position or angle of the light-collection-side adjustable optical system such that the spots of the guide light, which are observed at the adjustment surface, match.
摘要翻译：一种近场分析装置，包括：照射光学系统，包括用于调节其光轴的位置或角度的照射侧可调节光学系统，并且经由照射侧可调节光学系统将照射侧引导光照射到调整表面上 ; 光收集光学系统，包括用于调节其光轴的位置或角度的采光侧可调光学系统，以及经由采光侧可调节光学系统将光收集侧引导光照射到调节表面上 ; 照射侧调节装置，用于调节照射侧可调节光学系统的位置或角度，使得在调节表面观察到的引导光点相匹配; 以及采集侧调整装置，其用于调整所述收光侧可调光学系统的位置或角度，使得在所述调整面观察到的所述引导光的光斑匹配。

10. 发明授权

US06710331B2 Near-field microscope 有权
标题翻译：近场显微镜
公开(公告)号：US06710331B2
公开(公告)日：2004-03-23
申请号：US09986012
申请日：2001-11-07
申请人： Yoshihito Narita , Shigeyuki Kimura
发明人： Yoshihito Narita , Shigeyuki Kimura
IPC分类号： H01J314
CPC分类号： G01Q60/22 , G01Q10/06 , G01Q30/06 , Y10S977/862
摘要： A near-field microscope comprising: a probe for scattering a near-field light; light emitting device including a light source for emitting light to a sample or said probe; and light sampling device for sampling and detecting a light that includes information of the sample scattered by said probe, said microscope comprising: control device for spacing said sample or probe from a field of a near-field light generated by said light emission or disposing the sample or probe at a position that is shallow in a field of near-field light, thereby detecting a noise by said light sampling device; inserting said sample or probe deeply into a field of near-field light generated by said light emission, thereby detecting light intensity by said light sampling device; and computing device for computing a measurement result obtained by subtracting a noise from said light intensity.
摘要翻译：一种近场显微镜，包括：用于散射近场光的探针; 发光器件包括用于向样品或所述探针发射光的光源; 以及用于采样和检测包括由所述探针散射的样品的信息的光的光取样装置，所述显微镜包括：用于将所述样品或探针与由所述发光产生的近场光的场隔开的控制装置，在近场光场中的浅的位置处的样品或探针，从而通过所述光采样装置检测噪声; 将所述样品或探针深深地插入由所述发光产生的近场光的场中，从而由所述光采样装置检测光强度; 以及用于计算通过从所述光强减去噪声而获得的测量结果的计算装置。

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