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1. 发明授权

US6086671A Method for growing a silicon single crystal 有权
标题翻译：生长硅单晶的方法
公开(公告)号：US6086671A
公开(公告)日：2000-07-11
申请号：US145417
申请日：1998-09-01
申请人： Souroku Kawanishi , Youichi Yamamoto
发明人： Souroku Kawanishi , Youichi Yamamoto
IPC分类号： C30B15/00 , C30B15/30 , C30B29/06 , C30B30/04 , H01L21/208 , C30B15/20
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068
摘要： A method for melting a silicon starting material can suppress silica (SiO2) from melting out from a quartz crucible wherein the silicon starting material is melted and can provide a high-quality silicon single crystal in a high yield. The growth method comprises melting the silicon starting material charged in the crucible while applying thereto a static magnetic field, contacting a seed crystal to a surface of the silicon melt, and pulling the seed crystal upwardly to solidify the contacted melt. The silicon starting material charged in the crucible, which is under melting, is applied with a static magnetic field such as a Cusp magnetic field, a horizontal magnetic field and/or a vertical magnetic field. The application can control heat convection occurring in the crucible during the course of the melting of the starting material, thereby obtaining a silicon single crystal having a reduced number of dislocation defects.
摘要翻译：熔融硅原料的方法可以抑制二氧化硅（SiO 2）从其中硅原料熔化的石英坩埚中熔化，并且可以高产率提供高质量的硅单晶。生长方法包括熔化装载在坩埚中的硅原料，同时向其施加静态磁场，将晶种接触硅熔体的表面，并向上拉籽晶以固化接触的熔体。装在熔融坩埚中的硅原料被施加有诸如Cusp磁场，水平磁场和/或垂直磁场的静磁场。该应用可以控制在原料熔化过程中在坩埚中发生的热对流，从而获得具有减少的位错缺陷数量的硅单晶。

2. 发明授权

US5700320A Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction 失效
标题翻译：长度方向或径向均匀杂质分布的硅单晶的生长
公开(公告)号：US5700320A
公开(公告)日：1997-12-23
申请号：US620391
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/04
CPC分类号： C30B29/06 , C30B15/00
摘要： When a B or P-doped Si single crystal is pulled up from a B or P-doped melt by the Czochralski method, an element such as Ga, Sb or In having the effect to reduce the heat expansion coefficient of said melt at a temperature near the melting point is added to said melt. The additive element stabilizes the temperature condition of crystal growth so as to control the generation of eddy flows just below the interface of crystal growth. When a Ga or Sb-doped Si single crystal is pulled up from a Ga or Sb-doped melt, an element such as B or P having the effect to increase the heat expansion coefficient of said melt at a temperature near the melting point is added. The agitation of the melt just below the interface of crystal growth is accelerated by the addition of B or P, so as to assure the growth of a Si single crystal from the melt having impurity distribution made uniform along the radial direction. Accordingly, a Si single crystal is formed having a uniform impurity distribution along its lengthwise or radial direction.
摘要翻译：当通过Czochralski方法从B或P掺杂的熔体中提取B或P掺杂的Si单晶时，可以使用诸如Ga，Sb或In的元素，其具有在温度下降低所述熔体的热膨胀系数在熔点附近加入熔融物。添加元素稳定了晶体生长的温度条件，从而控制刚好低于晶体生长界面的涡流的产生。当从Ga或Sb掺杂的熔体中提取Ga或Sb掺杂的Si单晶时，添加诸如B或P的元素，其在熔点附近的温度下增加所述熔体的热膨胀系数，。通过添加B或P来促进刚好低于晶体生长界面的熔体的搅拌，以确保Si单晶从具有沿径向方向均匀的杂质分布的熔体生长。因此，形成沿着其长度方向或径向方向具有均匀杂质分布的Si单晶。

3. 发明授权

US5683504A Growth of silicon single crystal 失效
标题翻译：硅单晶的生长
公开(公告)号：US5683504A
公开(公告)日：1997-11-04
申请号：US621054
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/20 , C30B15/00 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/00 , Y10S117/901
摘要： When a single crystal is pulled up from a melt, the difference .DELTA.T between temperatures at the bottom of a crucible and at the interface of crystal growth is controlled so as to hold the Rayleigh constant defined by the formula of: R a=g.multidot..beta..multidot..DELTA.T.multidot.L/.kappa..multidot..nu. within the range of 5.times.10.sup.5 -4.times.10.sup.7, wherein g represents the acceleration of gravity, .beta. the volumetric expansion coefficient of the melt, L the depth of the melt, .kappa. thermal diffusivity and .nu. the kinematic viscocity. Since the convection mode of the melt at the interface of crystal growth is constantly held in the region of soft turbulence, a single crystal is grown under the stabilized temperature condition without the transfer of the impurity distribution in the melt into the growing single crystal.
摘要翻译：当从熔体中拉出单晶时，控制坩埚底部温度和晶体生长界面处的差ΔTA，以保持由以下公式定义的瑞利常数：R a = g xβ x DELTA TxL / kappa x nu在5×10 5 -4×10 7的范围内，其中g表示重力的加速度，β表示熔体的体积膨胀系数，L表示熔体的深度，κ热扩散率和nu的运动粘度。由于晶体生长界面处的熔体的对流模式不断地保持在软湍流区域，所以在稳定的温度条件下生长单晶，而不会将熔体中的杂质分布转移到生长的单晶中。

4. 发明授权

US06579363B2 Semiconductor single crystal pulling apparatus 有权
公开(公告)号：US06579363B2
公开(公告)日：2003-06-17
申请号：US09978206
申请日：2001-10-17
申请人： Souroku Kawanishi , Masahito Watanabe , Minoru Eguchi
发明人： Souroku Kawanishi , Masahito Watanabe , Minoru Eguchi
IPC分类号： C30B1520
CPC分类号： C30B15/305 , C30B15/30 , Y10S117/917 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072
摘要： By using a semiconductor single crystal pulling apparatus for growing single crystals by the Czochralski method while rotating the melt by a magnetic field and electric current, namely by the EMCZ method, which comprises a main pulling means for pulling a single crystal, a holding mechanism for gripping an engaging stepped portion formed on the single crystal through engaging members and a sub pulling means for moving the holding mechanism up and down and in which an electric current is passed through the main pulling means and through the sub pulling means, it is possible to prevent heavy single crystals from undergoing a falling accident and, at the same time, effectively reduce the power consumption. In this pulling apparatus, it is effective to feed an electric current to the sub pulling means alone and it is desirable to dispose two or more electrodes whether the pulling means is of a shaft type or wire type.

5. 发明授权

US6113688A Process for producing single crystals 有权
标题翻译：单晶生产工艺
公开(公告)号：US6113688A
公开(公告)日：2000-09-05
申请号：US164375
申请日：1998-10-01
申请人： Souroku Kawanishi , Makoto Itou
发明人： Souroku Kawanishi , Makoto Itou
IPC分类号： C30B15/00 , C30B15/30 , C30B29/06 , C30B30/04 , C30B15/20
CPC分类号： C30B29/06 , C30B15/305 , Y10S117/917
摘要： A method of growing a single crystal, comprises pulling a single crystal from molten material in a crucible by the Czochralski method; simultaneously applying an axially symmetric, radial cusp magnetic field to the molten material; and simultaneously heating the crucible from both the bottom and the sides; where a ratio of the heating from the bottom of the crucible, q, to the total heating of the crucible, Q, is q/Q, and during the pulling the ratio q/Q changes. The concentration of oxygen in the pulling direction of the crystal may be accurately controlled, and is uniform.
摘要翻译：生长单晶的方法包括通过切克劳斯（Czochralski）法从坩埚中的熔融材料中拉出单晶; 同时对熔融材料施加轴向对称的径向尖点磁场; 同时从坩埚的底部和侧面加热坩埚; 其中来自坩埚底部的加热比q与坩埚的总加热量Q的比值为q / Q，并且在拉伸期间q / Q比改变。可以精确地控制晶体的拉动方向上的氧浓度，并且是均匀的。

6. 发明授权

US5704974A Growth of silicon crystal from melt having extraordinary eddy flows on its surface 失效
标题翻译：来自熔体的硅晶体在其表面上生长具有非凡的涡流
公开(公告)号：US5704974A
公开(公告)日：1998-01-06
申请号：US620873
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/30
摘要： When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.
摘要翻译：当将Si单晶8从容纳在坩埚2中的熔融物6拉出时，根据表面的熔体的温度分布来判断在熔体6中产生的涡流的状态。根据判断结果，将气体，即N2，Xe或Kr，其引起熔体6的密度的异常偏差加到大气中，以保持涡流处于不稳定状态。在来自熔融体的晶体生长的情况下，所述气体的效果是典型的，在该熔体中添加了具有抑制密度特别偏差的作用的诸如Ca，Sb，Al，As或In的掺杂剂。由于单晶被从保持在表面的温度控制条件下的熔体中拉出，所以杂质分布和氧分布沿晶体生长方向均匀。以这种方式获得的单晶具有高度稳定的质量。

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