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1. 发明授权

US08598490B2 Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes 失效
标题翻译：使用多个定制的激光脉冲形状激光加工工件的方法和系统
公开(公告)号：US08598490B2
公开(公告)日：2013-12-03
申请号：US13076810
申请日：2011-03-31
申请人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
发明人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
IPC分类号： H01L21/78
CPC分类号： H01S3/102 , B23K26/0622 , B23K26/064 , B23K26/389 , B23K26/40 , B23K26/705 , B23K2103/172 , B23K2103/50 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/27436 , H01L2224/2919 , H01L2224/83191 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/0665 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01S3/0057 , H01S3/1305 , H01L2924/00 , H01L2924/3512
摘要： Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.
摘要翻译：定制的激光脉冲形状用于加工工件。例如，半导体器件晶片在芯片附着膜（DAF）上的激光切割可以使用不同的定制的激光脉冲形状，用于将器件层划分到半导体衬底，切割半导体衬底，切割下面的DAF和/或后处理的上模边缘以增加冲模强度。不同的单形激光脉冲序列可以用于激光束在划线上的相应配方步骤或通过。在另一个实施例中，使用包括彼此不同的至少两个激光脉冲的混合形状的激光脉冲串，划线半导体器件晶片仅包括激光束沿着划线的单次通过。另外，或者在其他实施例中，可以选择一个或多个定制的脉冲形状并将其提供给工件。选择可以基于传感器反馈。

2. 发明申请

US20100177794A1 PULSE TEMPORAL PROGRAMMABLE ULTRAFAST BURST MODE LASER FOR MICROMACHINING 失效
标题翻译：脉冲时间可编程超声波激光模式激光
公开(公告)号：US20100177794A1
公开(公告)日：2010-07-15
申请号：US12354373
申请日：2009-01-15
申请人： Xiaoyuan Peng , Andrew Hooper
发明人： Xiaoyuan Peng , Andrew Hooper
IPC分类号： H01S3/10
CPC分类号： H01S3/2316 , B23K26/0624 , H01S3/06758 , H01S3/2383 , H01S5/0085 , H01S5/12 , H01S2301/08
摘要： A laser processing system provides a burst of ultrafast laser pulses having a selectively shaped burst envelope. A burst pulse laser includes a high repetition rate ultrafast laser to deliver a pulse train with each pulse in the train having an independently controlled amplitude. The respective amplitudes of each ultrafast pulse in a group define a “burst envelope.” In addition to independently controlling the amplitude of each ultrafast pulse within the burst envelope, the system may also provide selective control of spacing between each ultrafast pulse and/or the overall temporal width of the burst envelope. Thus, the system provides selective shaping of the burst envelope for particular laser processing applications.
摘要翻译：激光处理系统提供具有选择性形状的突发包络的超快激光脉冲的脉冲串。突发脉冲激光器包括高重复率超快速激光器，以传递脉冲串，列车中的每个脉冲具有独立控制的振幅。组中的每个超快速脉冲的相应幅度定义了“脉冲包络”。除了独立地控制脉冲包络内的每个超快脉冲的振幅之外，系统还可以提供对每个超快脉冲之间和/或突发包络的总时间宽度。因此，该系统为特定的激光处理应用提供了脉冲包络的选择性整形。

3. 发明申请

US20110298156A1 METHODS AND SYSTEMS FOR LASER PROCESSING A WORKPIECE USING A PLURALITY OF TAILORED LASER PULSE SHAPES 失效
标题翻译：激光加工工艺的方法和系统使用多种激光激光脉冲形状
公开(公告)号：US20110298156A1
公开(公告)日：2011-12-08
申请号：US13076810
申请日：2011-03-31
申请人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
发明人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
IPC分类号： B29C35/08
CPC分类号： H01S3/102 , B23K26/0622 , B23K26/064 , B23K26/389 , B23K26/40 , B23K26/705 , B23K2103/172 , B23K2103/50 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/27436 , H01L2224/2919 , H01L2224/83191 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/0665 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01S3/0057 , H01S3/1305 , H01L2924/00 , H01L2924/3512
摘要： Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.
摘要翻译：定制的激光脉冲形状用于加工工件。例如，半导体器件晶片在芯片附着膜（DAF）上的激光切割可以使用不同的定制的激光脉冲形状，用于将器件层划分到半导体衬底，切割半导体衬底，切割下面的DAF和/或后处理的上模边缘以增加冲模强度。不同的单形激光脉冲序列可以用于激光束在划线上的相应配方步骤或通过。在另一个实施例中，划线半导体器件晶片仅使用包括彼此不同的至少两个激光脉冲的混合形激光脉冲串沿着划线的激光束的单次通过。另外，或者在其他实施例中，可以选择一个或多个定制的脉冲形状并将其提供给工件。选择可以基于传感器反馈。

4. 发明授权

US08309885B2 Pulse temporal programmable ultrafast burst mode laser for micromachining 失效
标题翻译：用于微加工的脉冲时间可编程超快脉冲模式激光器
公开(公告)号：US08309885B2
公开(公告)日：2012-11-13
申请号：US12354373
申请日：2009-01-15
申请人： Xiaoyuan Peng , Andrew Hooper
发明人： Xiaoyuan Peng , Andrew Hooper
IPC分类号： B23K26/06
CPC分类号： H01S3/2316 , B23K26/0624 , H01S3/06758 , H01S3/2383 , H01S5/0085 , H01S5/12 , H01S2301/08
摘要： A laser processing system provides a burst of ultrafast laser pulses having a selectively shaped burst envelope. A burst pulse laser includes a high repetition rate ultrafast laser to deliver a pulse train with each pulse in the train having an independently controlled amplitude. The respective amplitudes of each ultrafast pulse in a group define a “burst envelope.” In addition to independently controlling the amplitude of each ultrafast pulse within the burst envelope, the system may also provide selective control of spacing between each ultrafast pulse and/or the overall temporal width of the burst envelope. Thus, the system provides selective shaping of the burst envelope for particular laser processing applications.
摘要翻译：激光处理系统提供具有选择性形状的突发包络的超快激光脉冲的脉冲串。突发脉冲激光器包括高重复率超快速激光器，以传递脉冲串，列车中的每个脉冲具有独立控制的振幅。组中每个超快脉冲的相应幅度定义了一个脉冲包络。除了独立地控制突发包络内的每个超快脉冲的振幅之外，系统还可以提供对每个超快脉冲之间的间隔和/或突发包络的总时间宽度的选择性控制。因此，该系统为特定的激光处理应用提供了脉冲包络的选择性整形。

5. 发明授权

US08476552B2 Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes 失效
标题翻译：激光系统和方法使用三角形定制的激光脉冲进行选定的目标等级
公开(公告)号：US08476552B2
公开(公告)日：2013-07-02
申请号：US12753659
申请日：2010-04-02
申请人： Bong H. Cho , Brian L. Pugh , Andrew Hooper
发明人： Bong H. Cho , Brian L. Pugh , Andrew Hooper
IPC分类号： B23K26/00
CPC分类号： H01S3/1305 , B23K26/0622 , H01L23/5258 , H01L2924/0002 , H01S3/0057 , H01S3/102 , H01L2924/00
摘要： Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. At least one of the predefined temporal pulse profiles may be triangular. The target class may include, for example unpassivated electrically conductive links or other bare metal structures. Based on the target class associated with the selected target, a laser pulse is generated having a triangular temporal pulse profile. The generated laser pulse is used to process the selected structure.
摘要翻译：使用激光加工诸如半导体晶片或其他材料的工件包括选择对应于与预定义的时间脉冲轮廓相关联的目标类别的目标。预定义的时间脉冲轮廓中的至少一个可以是三角形的。目标类可以包括例如未激活的导电链路或其他裸机构。基于与所选择的目标相关联的目标类别，产生具有三角形时间脉冲分布的激光脉冲。所产生的激光脉冲用于处理所选择的结构。

6. 发明申请

US20100276405A1 LASER SYSTEMS AND METHODS USING TRIANGULAR-SHAPED TAILORED LASER PULSES FOR SELECTED TARGET CLASSES 失效
标题翻译：激光系统和使用三角形定制激光脉冲的选择目标类的方法
公开(公告)号：US20100276405A1
公开(公告)日：2010-11-04
申请号：US12753659
申请日：2010-04-02
申请人： Bong H. Cho , Brian L. Pugh , Andrew Hooper
发明人： Bong H. Cho , Brian L. Pugh , Andrew Hooper
IPC分类号： B23K26/00
CPC分类号： H01S3/1305 , B23K26/0622 , H01L23/5258 , H01L2924/0002 , H01S3/0057 , H01S3/102 , H01L2924/00
摘要： Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. At least one of the predefined temporal pulse profiles may be triangular. The target class may include, for example unpassivated electrically conductive links or other bare metal structures. Based on the target class associated with the selected target, a laser pulse is generated having a triangular temporal pulse profile. The generated laser pulse is used to process the selected structure.
摘要翻译：使用激光加工诸如半导体晶片或其他材料的工件包括选择对应于与预定义的时间脉冲轮廓相关联的目标类别的目标。预定义的时间脉冲轮廓中的至少一个可以是三角形的。目标类可以包括例如未激活的导电链路或其他裸机构。基于与所选择的目标相关联的目标类别，产生具有三角形时间脉冲分布的激光脉冲。所产生的激光脉冲用于处理所选择的结构。

7. 发明申请

US20110287607A1 METHOD AND APPARATUS FOR IMPROVED WAFER SINGULATION 审中-公开
标题翻译：改进方法和装置调整方法
公开(公告)号：US20110287607A1
公开(公告)日：2011-11-24
申请号：US13076238
申请日：2011-03-30
申请人： Yasu Osako , Bong Cho , Daragh Finn , Andrew Hooper , James O'Brien
发明人： Yasu Osako , Bong Cho , Daragh Finn , Andrew Hooper , James O'Brien
IPC分类号： H01L21/78 , B23K26/00
CPC分类号： B23K26/364 , B23K26/0608 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L21/67092
摘要： Laser singulation of electronic devices from semiconductor substrates including wafers is performed using up to 3 lasers from 2 wavelength ranges. Using up to 3 lasers from 2 wavelength ranges permits laser singulation of wafers held by die attach film while avoiding problems caused by single-wavelength dicing. In particular, using up to 3 lasers from 2 wavelength ranges permits efficient dicing of semiconductor wafers while avoiding debris and thermal problems associated with laser processing die attach tape.
摘要翻译：使用来自2个波长范围的3个激光器来执行包括晶片的半导体基板的电子器件的激光切割。使用2个波长范围的多达3个激光器可以激光切割由芯片附着膜保持的晶片，同时避免单波长切割引起的问题。特别地，使用2个波长范围的多达3个激光器可以有效切割半导体晶片，同时避免与激光加工芯片附着带相关的碎片和热问题。

8. 发明授权

US08526473B2 Methods and systems for dynamically generating tailored laser pulses 有权
标题翻译：动态产生定制激光脉冲的方法和系统
公开(公告)号：US08526473B2
公开(公告)日：2013-09-03
申请号：US12060076
申请日：2008-03-31
申请人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
发明人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
IPC分类号： H01L21/302 , H01S3/10 , B23K26/38
CPC分类号： H01S3/1305 , B23K26/0622 , H01S3/0057 , H01S3/102
摘要： Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.
摘要翻译：使用激光加工诸如半导体晶片或其他材料的工件包括选择对应于与预定义的时间脉冲轮廓相关联的目标类别的目标。时间脉冲分布包括限定第一持续时间的第一部分和限定第二持续时间的第二部分。一种方法包括：基于激光系统输入参数产生激光脉冲，所述激光系统输入参数被配置为根据时间脉冲分布来形成激光脉冲，检测所产生的激光脉冲，将所产生的激光脉冲与时间脉冲分布进行比较，以及调整激光系统输入参数基于比较。

9. 发明申请

US20120160814A1 METHODS AND SYSTEMS FOR LINK PROCESSING USING LASER PULSES WITH OPTIMIZED TEMPORAL POWER PROFILES AND POLARIZATIONS 审中-公开
标题翻译：使用激光脉冲进行链接处理的方法和系统与优化的时间功率分布和极化
公开(公告)号：US20120160814A1
公开(公告)日：2012-06-28
申请号：US12980131
申请日：2010-12-28
申请人： Yasu Osako , Kelly J. Bruland , Andrew Hooper , Jim Dumestre , David Lord
发明人： Yasu Osako , Kelly J. Bruland , Andrew Hooper , Jim Dumestre , David Lord
IPC分类号： B23K26/00
CPC分类号： B23K26/364 , B23K26/0624 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50
摘要： Systems and methods ablate electrically conductive links using laser pulses with optimized temporal power profiles and/or polarizations. In certain embodiments, the polarization property of a laser beam is set such that coupling between the laser beam and an electrically conductive link reduces the pulse energy required to ablate the electrically conductive link. In one such embodiment, the polarization is selected based on a depth of a target link structure. In another embodiment, the polarization changes as deeper material is removed from a target location. In addition, or in other embodiments, a first portion of a temporal power profile of a laser beam includes a rapid rise time to heat an upper portion of an electrically conductive link so as to form cracks in a passivation layer over upper corners of the electrically conductive link, without forming cracks at lower corners of the electrically conductive link.
摘要翻译：系统和方法使用具有优化的时间功率分布和/或偏振的激光脉冲消融导电链路。在某些实施例中，激光束的偏振特性被设定为使得激光束和导电链节之间的耦合降低了烧蚀导电连接所需的脉冲能量。在一个这样的实施例中，基于目标链路结构的深度来选择极化。在另一个实施例中，当从目标位置移除较深的材料时，偏振改变。另外或在其他实施例中，激光束的时间功率分布的第一部分包括加热导电连接件的上部的快速上升时间，以便在电气的上角上的钝化层中形成裂纹导电连接件，而不会在导电连接件的下角形成裂纹。

10. 发明授权

US08997701B2 Rotary synchronous charge trapping 有权
标题翻译：旋转同步电荷捕获
公开(公告)号：US08997701B2
公开(公告)日：2015-04-07
申请号：US14001482
申请日：2012-02-24
申请人： Andrew Hooper , Coleman Bode , Alexander Fuhrman , Ty Lord
发明人： Andrew Hooper , Coleman Bode , Alexander Fuhrman , Ty Lord
IPC分类号： F02D13/02 , F02B75/02 , F01L7/02 , F01L7/12 , F02B25/14
CPC分类号： F02B75/02 , F01L7/021 , F01L7/12 , F01L2250/04 , F01L2820/01 , F02B25/14
摘要： An exemplary two-stroke internal combustion engine can comprise one or more cylinders comprising exhaust ports, one or more pistons configured to cyclically cover and uncover the exhaust ports during reciprocation of the pistons within the cylinders, and one or more rotary exhaust valves associated with each exhaust port. The exhaust valves can be configured to rotate around a valve axis that is substantially parallel to an axis of rotation of a crank shaft of the engine. Each exhaust valve at least partially obstructs the associated exhaust port during a portion of the exhaust valve's rotation about the valve axis while the associated exhaust port is at least partially uncovered by the associated piston, thereby trapping fresh charge within the combustion chamber.
摘要翻译：示例性二冲程内燃机可以包括一个或多个气缸，其包括排气口，一个或多个活塞构造成在气缸内的活塞往复运动期间循环地覆盖和露出排气口，以及与每个活塞相关的一个或多个旋转排气阀排气口。排气门可以构造成围绕基本上平行于发动机的曲轴的旋转轴线的阀轴线旋转。在排气阀围绕阀轴线旋转的一部分期间，每个排气阀至少部分地阻塞相关联的排气口，同时相关联的排气口至少部分地不被相关联的活塞覆盖，从而将新鲜的电荷捕获在燃烧室内。

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