专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110298156A1 METHODS AND SYSTEMS FOR LASER PROCESSING A WORKPIECE USING A PLURALITY OF TAILORED LASER PULSE SHAPES 失效
标题翻译：激光加工工艺的方法和系统使用多种激光激光脉冲形状
公开(公告)号：US20110298156A1
公开(公告)日：2011-12-08
申请号：US13076810
申请日：2011-03-31
申请人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
发明人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
IPC分类号： B29C35/08
CPC分类号： H01S3/102 , B23K26/0622 , B23K26/064 , B23K26/389 , B23K26/40 , B23K26/705 , B23K2103/172 , B23K2103/50 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/27436 , H01L2224/2919 , H01L2224/83191 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/0665 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01S3/0057 , H01S3/1305 , H01L2924/00 , H01L2924/3512
摘要： Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.
摘要翻译：定制的激光脉冲形状用于加工工件。例如，半导体器件晶片在芯片附着膜（DAF）上的激光切割可以使用不同的定制的激光脉冲形状，用于将器件层划分到半导体衬底，切割半导体衬底，切割下面的DAF和/或后处理的上模边缘以增加冲模强度。不同的单形激光脉冲序列可以用于激光束在划线上的相应配方步骤或通过。在另一个实施例中，划线半导体器件晶片仅使用包括彼此不同的至少两个激光脉冲的混合形激光脉冲串沿着划线的激光束的单次通过。另外，或者在其他实施例中，可以选择一个或多个定制的脉冲形状并将其提供给工件。选择可以基于传感器反馈。

2. 发明授权

US08598490B2 Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes 失效
标题翻译：使用多个定制的激光脉冲形状激光加工工件的方法和系统
公开(公告)号：US08598490B2
公开(公告)日：2013-12-03
申请号：US13076810
申请日：2011-03-31
申请人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
发明人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
IPC分类号： H01L21/78
CPC分类号： H01S3/102 , B23K26/0622 , B23K26/064 , B23K26/389 , B23K26/40 , B23K26/705 , B23K2103/172 , B23K2103/50 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/27436 , H01L2224/2919 , H01L2224/83191 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/0665 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01S3/0057 , H01S3/1305 , H01L2924/00 , H01L2924/3512
摘要： Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.
摘要翻译：定制的激光脉冲形状用于加工工件。例如，半导体器件晶片在芯片附着膜（DAF）上的激光切割可以使用不同的定制的激光脉冲形状，用于将器件层划分到半导体衬底，切割半导体衬底，切割下面的DAF和/或后处理的上模边缘以增加冲模强度。不同的单形激光脉冲序列可以用于激光束在划线上的相应配方步骤或通过。在另一个实施例中，使用包括彼此不同的至少两个激光脉冲的混合形状的激光脉冲串，划线半导体器件晶片仅包括激光束沿着划线的单次通过。另外，或者在其他实施例中，可以选择一个或多个定制的脉冲形状并将其提供给工件。选择可以基于传感器反馈。

3. 发明申请

US20120160814A1 METHODS AND SYSTEMS FOR LINK PROCESSING USING LASER PULSES WITH OPTIMIZED TEMPORAL POWER PROFILES AND POLARIZATIONS 审中-公开
标题翻译：使用激光脉冲进行链接处理的方法和系统与优化的时间功率分布和极化
公开(公告)号：US20120160814A1
公开(公告)日：2012-06-28
申请号：US12980131
申请日：2010-12-28
申请人： Yasu Osako , Kelly J. Bruland , Andrew Hooper , Jim Dumestre , David Lord
发明人： Yasu Osako , Kelly J. Bruland , Andrew Hooper , Jim Dumestre , David Lord
IPC分类号： B23K26/00
CPC分类号： B23K26/364 , B23K26/0624 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50
摘要： Systems and methods ablate electrically conductive links using laser pulses with optimized temporal power profiles and/or polarizations. In certain embodiments, the polarization property of a laser beam is set such that coupling between the laser beam and an electrically conductive link reduces the pulse energy required to ablate the electrically conductive link. In one such embodiment, the polarization is selected based on a depth of a target link structure. In another embodiment, the polarization changes as deeper material is removed from a target location. In addition, or in other embodiments, a first portion of a temporal power profile of a laser beam includes a rapid rise time to heat an upper portion of an electrically conductive link so as to form cracks in a passivation layer over upper corners of the electrically conductive link, without forming cracks at lower corners of the electrically conductive link.
摘要翻译：系统和方法使用具有优化的时间功率分布和/或偏振的激光脉冲消融导电链路。在某些实施例中，激光束的偏振特性被设定为使得激光束和导电链节之间的耦合降低了烧蚀导电连接所需的脉冲能量。在一个这样的实施例中，基于目标链路结构的深度来选择极化。在另一个实施例中，当从目标位置移除较深的材料时，偏振改变。另外或在其他实施例中，激光束的时间功率分布的第一部分包括加热导电连接件的上部的快速上升时间，以便在电气的上角上的钝化层中形成裂纹导电连接件，而不会在导电连接件的下角形成裂纹。

4. 发明申请

US20090245302A1 METHODS AND SYSTEMS FOR DYNAMICALLY GENERATING TAILORED LASER PULSES 有权
标题翻译：动态生成定制激光脉冲的方法和系统
公开(公告)号：US20090245302A1
公开(公告)日：2009-10-01
申请号：US12060076
申请日：2008-03-31
申请人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
发明人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
IPC分类号： H01S3/10
CPC分类号： H01S3/1305 , B23K26/0622 , H01S3/0057 , H01S3/102
摘要： Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.
摘要翻译：使用激光加工诸如半导体晶片或其他材料的工件包括选择对应于与预定义的时间脉冲轮廓相关联的目标类别的目标。时间脉冲分布包括限定第一持续时间的第一部分和限定第二持续时间的第二部分。一种方法包括：基于激光系统输入参数产生激光脉冲，所述激光系统输入参数被配置为根据时间脉冲分布来形成激光脉冲，检测所产生的激光脉冲，将所产生的激光脉冲与时间脉冲分布进行比较，以及调整激光系统输入参数基于比较。

5. 发明授权

US08526473B2 Methods and systems for dynamically generating tailored laser pulses 有权
标题翻译：动态产生定制激光脉冲的方法和系统
公开(公告)号：US08526473B2
公开(公告)日：2013-09-03
申请号：US12060076
申请日：2008-03-31
申请人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
发明人： Brian W. Baird , Clint R. Vandergiessen , Steve Swaringen , Robert Hainsey , Yunlong Sun , Kelly J. Bruland , Andrew Hooper
IPC分类号： H01L21/302 , H01S3/10 , B23K26/38
CPC分类号： H01S3/1305 , B23K26/0622 , H01S3/0057 , H01S3/102
摘要： Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.
摘要翻译：使用激光加工诸如半导体晶片或其他材料的工件包括选择对应于与预定义的时间脉冲轮廓相关联的目标类别的目标。时间脉冲分布包括限定第一持续时间的第一部分和限定第二持续时间的第二部分。一种方法包括：基于激光系统输入参数产生激光脉冲，所述激光系统输入参数被配置为根据时间脉冲分布来形成激光脉冲，检测所产生的激光脉冲，将所产生的激光脉冲与时间脉冲分布进行比较，以及调整激光系统输入参数基于比较。

6. 发明授权

US07687740B2 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows 有权
标题翻译：使用多个横向间隔开的激光束点进行多次打击的半导体结构处理
公开(公告)号：US07687740B2
公开(公告)日：2010-03-30
申请号：US11051262
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
IPC分类号： B23K26/00
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/76894
摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要翻译：方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构或在与第一行不同的第二行上的两个相邻结构之间。所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构，并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

7. 发明申请

US20080299783A1 SYSTEMS AND METHODS FOR PROCESSING SEMICONDUCTOR STRUCTURES USING LASER PULSES LATERALLY DISTRIBUTED IN A SCANNING WINDOW 有权
标题翻译：使用在扫描窗口中分布的激光脉冲处理半导体结构的系统和方法
公开(公告)号：US20080299783A1
公开(公告)日：2008-12-04
申请号：US11757232
申请日：2007-06-01
申请人： Kelly J. Bruland , Mark A. Unrath , Douglas E. Holmgren
发明人： Kelly J. Bruland , Mark A. Unrath , Douglas E. Holmgren
IPC分类号： H01L21/26 , G11B11/00
CPC分类号： B23K26/0622 , B23K26/082 , B23K2101/40
摘要： Systems and methods process structures on or within a semiconductor substrate using a series of laser pulses. In one embodiment, a deflector is configured to selectively deflect the laser pulses within a processing window. The processing window is scanned over the semiconductor substrate such that a plurality of laterally spaced rows of structures simultaneously pass through the processing window. As the processing window is scanned, the deflector selectively deflects the series of laser pulses among the laterally spaced rows within the processing window. Thus, multiple rows of structures may be processed in a single scan.
摘要翻译：系统和方法使用一系列激光脉冲在半导体衬底上或内部处理结构。在一个实施例中，偏转器被配置为在处理窗口内选择性地偏转激光脉冲。在半导体衬底上扫描处理窗口，使得多个横向间隔开的行结构同时通过处理窗口。当扫描处理窗口时，偏转器选择性地偏转处理窗口内的横向间隔的行中的一系列激光脉冲。因此，可以在单次扫描中处理多行结构。

8. 发明申请

US20080121627A1 Methods and systems for semiconductor structure processing using multiple laser beam spots 有权
标题翻译：使用多个激光束点进行半导体结构处理的方法和系统
公开(公告)号：US20080121627A1
公开(公告)日：2008-05-29
申请号：US11980872
申请日：2007-10-30
申请人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
发明人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
IPC分类号： B23K26/38 , B23K26/03
CPC分类号： H01L23/5258 , B23K26/042 , B23K26/0613 , B23K26/067 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或其中的结构。结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。

9. 发明授权

US07964819B2 Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target 有权
标题翻译：用于使用处理目标作为度量目标相对于半导体集成电路定位激光束点的方法和系统
公开(公告)号：US07964819B2
公开(公告)日：2011-06-21
申请号：US11874786
申请日：2007-10-18
申请人： Kelly J. Bruland
发明人： Kelly J. Bruland
IPC分类号： B23K26/04 , B23K26/08 , H01L21/71 , H01L21/768
CPC分类号： B23K26/04 , H01L23/5258 , H01L23/544 , H01L2223/5442 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： Various methods and systems measure, determine, or align a position of a laser beam spot relative to a semiconductor substrate having structures on or within the semiconductor substrate to be selectively processed by delivering a processing laser beam to a processing laser beam spot. The various methods and systems utilize those structures themselves to perform the measurement, determination, or alignment.
摘要翻译：各种方法和系统相对于具有在半导体衬底上或半导体衬底内的结构的半导体衬底来测量，确定或对准激光束点的位置，以通过将处理激光束传送到处理激光束点来进行选择性处理。各种方法和系统利用这些结构本身进行测量，确定或对准。

10. 发明授权

US07935941B2 Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures 有权
标题翻译：使用在非相邻结构上在轴上间隔开的多个激光束点的半导体结构处理
公开(公告)号：US07935941B2
公开(公告)日：2011-05-03
申请号：US11051263
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Frank G. Evans
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Frank G. Evans
IPC分类号： B23K26/08 , B23K26/38
CPC分类号： B23K26/067
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。这些结构被布置成在大体上沿长度方向延伸的一排。该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。该方法将第一和第二激光束引导到行中不相邻的第一和第二结构。该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式