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1. 发明申请

US20110076839A1 MAKING FILMS COMPOSED OF SEMICONDUCTOR NANOCRYSTALS 审中-公开
标题翻译：制备半导体纳米晶体的薄膜
公开(公告)号：US20110076839A1
公开(公告)日：2011-03-31
申请号：US12568980
申请日：2009-09-29
申请人： Xiaofan Ren , Keith B. Kahen
发明人： Xiaofan Ren , Keith B. Kahen
IPC分类号： H01L21/20
CPC分类号： H01L21/02551 , C09K11/025 , C09K11/883 , H01L21/02628
摘要： A method of making a film of large II-VI nanocrystals, including: providing a mixture of column II, column VI chemical precursors, and coordinating solvents selected from amines, phosphines, phosphine oxides, esters, ethers, or combinations thereof by: injecting under heat a higher molar quantity of column II chemical precursor than column VI chemical precursor; and ii) increasing the ratio of column VI to column II chemical precursors during the course of the reaction while still heating the mixture until the molar ratio of column VI chemical precursor to column II chemical precursor is in a range of 1 to 10; heating the mixture to grow large nanocrystals functionalized with coordinating ligands; washing the grown nanocrystals to remove the unreacted precursors and excess coordinating solvents; and d) depositing the large II-VI nanocrystals on a substrate in order to form the film.
摘要翻译：制备大型II-VI纳米晶体的膜的方法，包括：提供柱II，VI族化学前体和选自胺，膦，氧化膦，酯，醚或其组合的配位溶剂的混合物，方法如下：加热比第VI列化学前体更高摩尔量的柱II化学前体; 和ii）在反应过程中增加第VI列与第II列化学前体的比例，同时仍然加热混合物，直到列VI化学前体与第II列化学前体的摩尔比在1至10的范围内; 加热混合物以生长用配位配位体官能化的大的纳米晶体; 洗涤生长的纳米晶体以除去未反应的前体和过量的配位溶剂; 以及d）将大的II-VI纳米晶体沉积在基底上以形成膜。

2. 发明申请

US20100289001A1 DEVICE CONTAINING NON-BLINKING QUANTUM DOTS 有权
标题翻译：包含非闪烁量子的设备
公开(公告)号：US20100289001A1
公开(公告)日：2010-11-18
申请号：US12791173
申请日：2010-06-01
申请人： Keith B. Kahen , Xiaofan Ren
发明人： Keith B. Kahen , Xiaofan Ren
IPC分类号： H01L33/06
CPC分类号： C09K11/025 , C09K11/883
摘要： An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.
摘要翻译：包括两个间隔开的电极的光电器件; 以及至少一层含有三元核/壳纳米晶体的层，其设置在间隔开的电极之间并且具有含有合金组成梯度的三元半导体芯，并且其中三元核/壳纳米晶体表现出单分子非眨眼行为，其特征在于大于1分钟或辐射寿命小于10 ns。

3. 发明授权

US08242515B2 Device containing non-blinking quantum dots 有权
标题翻译：包含非闪烁量子点的设备
公开(公告)号：US08242515B2
公开(公告)日：2012-08-14
申请号：US12791173
申请日：2010-06-01
申请人： Keith B. Kahen , Xiaofan Ren
发明人： Keith B. Kahen , Xiaofan Ren
IPC分类号： H01L27/15
CPC分类号： C09K11/025 , C09K11/883
摘要： An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.
摘要翻译：包括两个间隔开的电极的光电器件; 以及至少一层含有三元核/壳纳米晶体的层，其设置在间隔开的电极之间并且具有含有合金组成梯度的三元半导体芯，并且其中三元核/壳纳米晶体表现出单分子非眨眼行为，其特征在于大于1分钟或辐射寿命小于10 ns。

4. 发明申请

US20110073835A1 SEMICONDUCTOR NANOCRYSTAL FILM 审中-公开
公开(公告)号：US20110073835A1
公开(公告)日：2011-03-31
申请号：US12568965
申请日：2009-09-29
申请人： Xiaofan Ren , Keith B. Kahen
发明人： Xiaofan Ren , Keith B. Kahen
IPC分类号： H01L29/06
CPC分类号： H01L51/5048 , C01B19/007 , H01L31/035218 , H01L31/0384 , H01L31/03925 , H01L2251/5369 , Y02E10/50
摘要： A film comprised of semiconductor nanocrystals having an aspect ratio less than 3:1 and a diameter greater than 10 nanometers, wherein the film has less than 5% by volume of organic material.
摘要翻译：由半导体纳米晶体构成的薄膜具有小于3:1的纵横比和大于10纳米的直径，其中该薄膜具有小于5体积％的有机材料。

5. 发明申请

US20110175030A1 PREPARING LARGE-SIZED EMITTING COLLOIDAL NANOCRYSTALS 审中-公开
标题翻译：制备大尺寸发射胶体纳米晶体
公开(公告)号：US20110175030A1
公开(公告)日：2011-07-21
申请号：US12688191
申请日：2010-01-15
申请人： XIAOFAN REN , Keith B. Kahen
发明人： XIAOFAN REN , Keith B. Kahen
IPC分类号： C09K11/54 , C09K11/08
CPC分类号： C09K11/025 , C09K11/565 , C09K11/883
摘要： A method of making a colloidal solution of ternary AIAIIB nanocrystals, wherein AI and AII are independently selected from an element of periodic table subgroup IIB, when B represents an element of periodic table main group VI; or AI and AII are independently selected from an element from periodic table main group III, when B represents an element of periodic table main group V. The method providing a mixture of AI in a suitable form for the generation of a nanocrystal, and coordinating solvents including at least 30 wt % of fatty acids; heating the reaction mixture for a suitable time, adding B in a suitable form for the generation of a nanocrystal, adding AII in a suitable form for the generation of a nanocrystals; and heating the reaction mixture for a sufficient period of time at a temperature suitable for forming nanocrystal AIAIIB.
摘要翻译：制备三元AIAIIB纳米晶体的胶体溶液的方法，其中当B表示周期表主族VI的元素时，其中Al和AII独立地选自周期表亚IIB族的元素; 或者Al和AII独立地选自周期表主组III的元素，当B代表周期表主族V的元素时。提供合适形式的AI的混合物以产生纳米晶体和配位溶剂的方法包括至少30重量％的脂肪酸; 将反应混合物加热适宜的时间，加入适当形式的B用于产生纳米晶体，以合适的形式加入AII以产生纳米晶体; 并在适于形成纳米晶体AIAIIB的温度下将反应混合物加热足够的时间。

6. 发明授权

US07777233B2 Device containing non-blinking quantum dots 有权
标题翻译：包含非闪烁量子点的设备
公开(公告)号：US07777233B2
公开(公告)日：2010-08-17
申请号：US11928292
申请日：2007-10-30
申请人： Keith B. Kahen , Xiaofan Ren
发明人： Keith B. Kahen , Xiaofan Ren
IPC分类号： H01L27/15
CPC分类号： C09K11/025 , C09K11/883
摘要： An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.
摘要翻译：包括两个间隔开的电极的光电器件; 以及至少一层含有三元核/壳纳米晶体的层，其设置在间隔开的电极之间并且具有含有合金组成梯度的三元半导体芯，并且其中三元核/壳纳米晶体表现出单分子非眨眼行为，其特征在于大于1分钟或辐射寿命小于10 ns。

7. 发明申请

US20090109435A1 DEVICE CONTAINING NON-BLINKING QUANTUM DOTS 有权
标题翻译：包含非闪烁量子的设备
公开(公告)号：US20090109435A1
公开(公告)日：2009-04-30
申请号：US11928292
申请日：2007-10-30
申请人： Keith B. Kahen , Xiaofan Ren
发明人： Keith B. Kahen , Xiaofan Ren
IPC分类号： G01N21/63 , H01J1/62
CPC分类号： C09K11/025 , C09K11/883
摘要： An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.
摘要翻译：包括两个间隔开的电极的光电器件; 以及至少一层含有三元核/壳纳米晶体的层，其设置在间隔开的电极之间并且具有含有合金组成梯度的三元半导体芯，并且其中三元核/壳纳米晶体表现出单分子非眨眼行为，其特征在于大于1分钟或辐射寿命小于10 ns。

8. 发明申请

US20100289003A1 MAKING COLLOIDAL TERNARY NANOCRYSTALS 审中-公开
标题翻译：制作胶体三次纳米晶体
公开(公告)号：US20100289003A1
公开(公告)日：2010-11-18
申请号：US11926538
申请日：2007-10-29
申请人： Keith B. Kahen , Xiaofan Ren
发明人： Keith B. Kahen , Xiaofan Ren
IPC分类号： H01L29/38 , H01L21/20
CPC分类号： C09K11/02 , C09K11/88 , C09K11/883 , C30B7/00 , C30B29/40 , C30B29/48 , C30B29/50 , C30B29/60 , C30B33/02
摘要： A method of making a colloidal solution of ternary semiconductor nanocrystals, includes providing binary semiconductor cores; forming first shells on the binary semiconductor cores containing one of the components of the binary semiconductor cores and another component which when combined with the binary semiconductor will form a ternary semiconductor, thereby providing core/shell nanocrystals; and annealing the core/shell nanocrystals to form ternary semiconductor nanocrystals containing a gradient in alloy composition.
摘要翻译：制备三元半导体纳米晶体的胶体溶液的方法包括提供二元半导体芯; 在包含二元半导体芯的一个部件的二元半导体芯上形成第一个壳，另一个组件与二元半导体组合时形成三元半导体，由此提供核/壳纳米晶体; 并退火核/壳纳米晶体以形成含有合金组成梯度的三元半导体纳米晶体。

9. 发明授权

US08212236B2 II-VI core-shell semiconductor nanowires 有权
标题翻译： II-VI核 - 壳半导体纳米线
公开(公告)号：US08212236B2
公开(公告)日：2012-07-03
申请号：US12689310
申请日：2010-01-19
申请人： Keith B. Kahen , Matthew Holland
发明人： Keith B. Kahen , Matthew Holland
IPC分类号： H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/0237 , H01L21/02381 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02485 , H01L21/02505 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0676 , H01L29/068 , H01L29/225 , H01L29/227 , H01L29/66469 , H01L29/775 , H01L33/18 , H01L33/28
摘要： A plurality of core-shell semiconductor nanowires each being fixed to a support includes II-VI materials for both the cores and the shells. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end.
摘要翻译：多个核 - 壳半导体纳米线各自固定到支撑体上，包括用于芯和壳的II-VI材料。每个纳米线终止于自由端，并且金属合金纳米颗粒在其自由端固定到每个纳米线。

10. 发明申请

US20110240953A1 INTEGRATED SEMICONDUCTOR NANOWIRE DEVICE 有权
标题翻译：集成半导体纳米器件
公开(公告)号：US20110240953A1
公开(公告)日：2011-10-06
申请号：US12749872
申请日：2010-03-30
申请人： Carolyn R. Ellinger , Keith B. Kahen
发明人： Carolyn R. Ellinger , Keith B. Kahen
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： H01L33/005 , H01L21/02557 , H01L21/0256 , H01L21/02653 , H01L33/06 , H01L33/08 , H01L33/18
摘要： A method of making a semiconductor nanowire device includes providing a plurality of spaced semiconductor nanowires on a growth substrate; applying a dielectric material so that it is disposed between the semiconductor nanowires producing a layer of embedded semiconductor nanowires having a top surface opposed to a bottom surface, wherein the bottom surface is defined by the interface with the growth substrate; depositing a first electrode over the top surface of the layer of embedded semiconductor nanowires so that it is in electrical contact with the semiconductor nanowires; joining the first electrode to a device substrate; removing the growth substrate and exposing the bottom surface of the layer of embedded semiconductor nanowires; and depositing a second electrode on the bottom surface of the layer of embedded semiconductor nanowires so that it is in electrical contact with the semiconductor nanowires.
摘要翻译：制造半导体纳米线器件的方法包括在生长衬底上提供多个间隔开的半导体纳米线; 施加电介质材料，使得其设置在半导体纳米线之间，产生具有与底表面相对的顶表面的嵌入式半导体纳米线层，其中底表面由与生长衬底的界面限定; 在所述嵌入式半导体纳米线层的顶表面上沉积第一电极，使得其与所述半导体纳米线电接触; 将所述第一电极接合到器件衬底; 去除生长衬底并暴露嵌入式半导体纳米线层的底表面; 以及在所述嵌入式半导体纳米线的所述层的底表面上沉积第二电极，使得其与所述半导体纳米线电接触。

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