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1. 发明申请

US20050170765A1 Universal abrasive sheet 有权
标题翻译：通用磨料片
公开(公告)号：US20050170765A1
公开(公告)日：2005-08-04
申请号：US11099254
申请日：2005-04-05
申请人： Jason Shermer , Matthew Holland
发明人： Jason Shermer , Matthew Holland
IPC分类号： B24B23/00 , B24B23/04 , B24D11/00
CPC分类号： B24D11/04 , B24B23/00 , B24B23/04 , B24D11/00 , B24D11/008 , Y10T428/15
摘要： A universal abrasive sheet is provided for a sanding or polishing machine and includes segments defined by weakened regions that allow portions of the universal abrasive sheet to be removed in order to adapt the abrasive sheet to alternative platent configurations. Each of the different configurations of the universal abrasive sheet can be provided with an individualized tip portion which can be separated from a body portion and either repositioned or replaced in order to change the working point of the tip portion when it becomes worn out.
摘要翻译：提供了用于砂磨机或抛光机的通用磨料片，并且包括通过弱化区域限定的段，其允许去除通用磨料片的部分，以便将磨料片适应于替代的浇注配置。通用磨料片的每个不同构造都可以设置有个体化的末端部分，其可以与主体部分分离并且被重新定位或更换，以便当其变得磨损时改变尖端部分的工作点。

2. 发明申请

US20110175059A1 II-VI CORE-SHELL SEMICONDUCTOR NANOWIRES 有权
标题翻译： II-VI核心半导体纳米颗粒
公开(公告)号：US20110175059A1
公开(公告)日：2011-07-21
申请号：US12689310
申请日：2010-01-19
申请人： Keith B. Kahen , Matthew Holland
发明人： Keith B. Kahen , Matthew Holland
IPC分类号： H01L29/12
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/0237 , H01L21/02381 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02485 , H01L21/02505 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0676 , H01L29/068 , H01L29/225 , H01L29/227 , H01L29/66469 , H01L29/775 , H01L33/18 , H01L33/28
摘要： A plurality of core-shell semiconductor nanowires each being fixed to a support includes II-VI materials for both the cores and the shells. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end.
摘要翻译：多个核 - 壳半导体纳米线各自固定到支撑体上，包括用于芯和壳的II-VI材料。每个纳米线终止于自由端，并且金属合金纳米颗粒在其自由端固定到每个纳米线。

3. 发明授权

US08784703B2 Method of making highly-confined semiconductor nanocrystals 有权
标题翻译：制备高度约束半导体纳米晶体的方法
公开(公告)号：US08784703B2
公开(公告)日：2014-07-22
申请号：US13275595
申请日：2011-10-18
申请人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
发明人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
IPC分类号： H01B1/06
CPC分类号： C09K11/02 , C09K11/565 , C09K11/70 , C09K11/883 , H01L33/502
摘要： A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.
摘要翻译：制备高约束半导体纳米晶体的胶体溶液的方法包括：通过组合溶剂，生长配体和至多一个半导体前体形成第一溶液; 将第一溶液加热至成核温度; 并向第一溶液中加入第二溶液，其具有溶剂，生长配体以及与第一溶液中的至少一种另外且不同的前体，以形成具有紧密均匀半导体区域的纳米晶体的粗溶液。该方法还包括：等待0.5至20秒，并向粗溶液中加入具有溶剂，生长配体和至少一种另外且不同于第一和第二溶液的另外和不同前体的第三溶液; 并且降低生长温度以使得能够在致密均匀的半导体区域周围形成梯度合金区域，从而形成高约束半导体纳米晶体的胶体溶液。

4. 发明申请

US20130092886A1 METHOD OF MAKING HIGHLY-CONFINED SEMICONDUCTOR NANOCRYSTALS 有权
标题翻译：制备高密度半导体纳米晶体的方法
公开(公告)号：US20130092886A1
公开(公告)日：2013-04-18
申请号：US13275595
申请日：2011-10-18
申请人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
发明人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
IPC分类号： H01B1/02 , H01B1/10
CPC分类号： C09K11/02 , C09K11/565 , C09K11/70 , C09K11/883 , H01L33/502
摘要： A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.
摘要翻译：制备高约束半导体纳米晶体的胶体溶液的方法包括：通过组合溶剂，生长配体和至多一个半导体前体形成第一溶液; 将第一溶液加热至成核温度; 并向第一溶液中加入第二溶液，其具有溶剂，生长配体以及与第一溶液中的至少一种另外且不同的前体，以形成具有紧密均匀半导体区域的纳米晶体的粗溶液。该方法还包括：等待0.5至20秒，并向粗溶液中加入具有溶剂，生长配体和至少一种另外且不同于第一和第二溶液的另外和不同前体的第三溶液; 并且降低生长温度以使得能够在致密均匀的半导体区域周围形成梯度合金区域，从而形成高约束半导体纳米晶体的胶体溶液。

5. 发明申请

US20120205586A1 INDIUM PHOSPHIDE COLLOIDAL NANOCRYSTALS 审中-公开
标题翻译：磷酸盐胶体纳米晶体
公开(公告)号：US20120205586A1
公开(公告)日：2012-08-16
申请号：US13024555
申请日：2011-02-10
申请人： Xiaofan Ren , Keith Brian Kahen , Matthew Holland
发明人： Xiaofan Ren , Keith Brian Kahen , Matthew Holland
IPC分类号： C09K11/02 , B05D7/00 , B82Y20/00
CPC分类号： C30B29/40 , C01B25/08 , C30B7/00
摘要： A method of making a colloidal solution of indium phosphide semiconductor nanocrystals, includes forming a first solution by combining solvents and ligands; and heating the first solution to a temperature equal to or higher than 290° C. and, while heating, adding to the first solution, a second solution containing trialkylindium, a phosphorus precursor and solvents and ligands so that a reaction takes place that forms a colloidal solution of indium phosphide semiconductor nanocrystals. The method further includes forming core shell indium phosphide semiconductor nanocrystals by forming semiconducting shells on the nanocrystals.
摘要翻译：制造磷化铟半导体纳米晶体的胶体溶液的方法包括通过结合溶剂和配体形成第一溶液; 并将第一溶液加热到等于或高于290℃的温度，并且在加热的同时向第一溶液中加入含有三烷基鎓，磷前体和溶剂和配体的第二溶液，使得形成反应磷化铟半导体纳米晶体的胶体溶液。该方法还包括通过在纳米晶体上形成半导体壳形成核心壳磷化铟半导体纳米晶体。

6. 发明申请

US20130092883A1 HIGHLY-CONFINED SEMICONDUCTOR NANOCRYSTALS 审中-公开
标题翻译：高分子半导体纳米晶体
公开(公告)号：US20130092883A1
公开(公告)日：2013-04-18
申请号：US13275424
申请日：2011-10-18
申请人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
发明人： Keith Brian Kahen , Matthew Holland , Sudeep Pallikkara Kuttiatoor
IPC分类号： H01B1/02 , B82Y99/00
CPC分类号： C09K11/025 , B82Y30/00 , B82Y40/00 , C09K11/883
摘要： A high confinement semiconductor nanocrystal and method for making such nanocrystal are described. The nanocrystal includes a compact homogenous semiconductor region having a first composition in the center area of the nanocrystal, with its diameter being less than 2.0 nm; and a gradient alloy region comprised of a second varying alloy composition which extends from the surface of the compact homogenous semiconductor region to the surface of the nanocrystal.
摘要翻译：描述了一种高约束半导体纳米晶体和制造这种纳米晶体的方法。纳米晶体包括在纳米晶体的中心区域具有第一组成的致密均匀的半导体区域，其直径小于2.0nm; 以及由从致密均匀半导体区域的表面延伸到纳米晶体的表面的第二变化合金组成的梯度合金区域。

7. 发明授权

US08377729B2 Forming II-VI core-shell semiconductor nanowires 有权
标题翻译：形成II-VI核 - 壳半导体纳米线
公开(公告)号：US08377729B2
公开(公告)日：2013-02-19
申请号：US12689326
申请日：2010-01-19
申请人： Keith B. Kahen , Matthew Holland
发明人： Keith B. Kahen , Matthew Holland
IPC分类号： H01L21/00 , H01L21/20
CPC分类号： H01L21/02551 , B82Y10/00 , H01L21/02469 , H01L21/02513 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L33/0087 , H01L33/06 , H01L33/18
摘要： A method of making II-VI core-shell semiconductor nanowires includes providing a support; depositing a layer including metal alloy nanoparticles on the support; and heating the support and growing II-VI core semiconductor nanowires where the metal alloy nanoparticles act as catalysts and selectively cause localized growth of the core nanowires. The method further includes modifying the growth conditions and shelling the core nanowires to form II-VI core-shell semiconductor nanowires.
摘要翻译：制备II-VI核 - 壳半导体纳米线的方法包括提供支撑体; 在载体上沉积包含金属合金纳米颗粒的层; 并加热载体和生长的II-VI核半导体纳米线，其中金属合金纳米颗粒用作催化剂并选择性地引起核心纳米线的局部生长。该方法还包括修饰生长条件和脱壳核心纳米线以形成II-VI核 - 壳半导体纳米线。

8. 发明申请

US20110177683A1 FORMING II-VI CORE-SHELL SEMICONDUCTOR NANOWIRES 有权
标题翻译：形成II-VI核心半导体纳米颗粒
公开(公告)号：US20110177683A1
公开(公告)日：2011-07-21
申请号：US12689326
申请日：2010-01-19
申请人： Keith B. Kahen , Matthew Holland
发明人： Keith B. Kahen , Matthew Holland
IPC分类号： H01L21/363 , H01L21/38
CPC分类号： H01L21/02551 , B82Y10/00 , H01L21/02469 , H01L21/02513 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L33/0087 , H01L33/06 , H01L33/18
摘要： A method of making II-VI core-shell semiconductor nanowires includes providing a support; depositing a layer including metal alloy nanoparticles on the support; and heating the support and growing II-VI core semiconductor nanowires where the metal alloy nanoparticles act as catalysts and selectively cause localized growth of the core nanowires. The method further includes modifying the growth conditions and shelling the core nanowires to form II-VI core-shell semiconductor nanowires.
摘要翻译：制备II-VI核 - 壳半导体纳米线的方法包括提供支撑体; 在载体上沉积包含金属合金纳米颗粒的层; 并加热载体和生长的II-VI核半导体纳米线，其中金属合金纳米颗粒用作催化剂并选择性地引起核心纳米线的局部生长。该方法还包括修饰生长条件和脱壳核心纳米线以形成II-VI核 - 壳半导体纳米线。

9. 发明授权

US5161849A Protective cover for an automotive vehicle 失效
标题翻译：汽车保护罩
公开(公告)号：US5161849A
公开(公告)日：1992-11-10
申请号：US787117
申请日：1991-11-04
申请人： Matthew Holland, Jr.
发明人： Matthew Holland, Jr.
IPC分类号： B60J11/00
CPC分类号： B60J11/00
摘要： A flexible protective cover for an automotive vehicle is provided with an anchorage mechanism that is inserted through a door opening or trunk opening. When the door or trunk lid is closed and locked, the anchorage mechanism is trapped within the vehicle interior space so that it cannot be pulled out to remove the cover from the vehicle. The anchorage mechanism is preferably a hollow air-filled structure having a whistle or siren mounted in such a position that when an external pulling force is exerted on the anchorage mechanism air is forced out of the air-filled structure through the whistle or siren, thereby producing an audible alarm signal.
摘要翻译：一种用于机动车辆的柔性保护罩设置有通过门开口或行李箱开口插入的锚固机构。当门或行李箱盖关闭并被锁定时，锚固机构被困在车辆内部空间内，使得它不能被拉出以从车辆上移除盖子。锚固机构优选为中空充气结构，其具有安装在这样一个位置的位置的哨子或警报器，当外部拉力施加在锚固机构上时，空气被迫通过哨子或警笛从充满空气的结构中流出，由此产生一个声音报警信号。

10. 发明授权

US10550634B1 Child safety gate system 有权
公开(公告)号：US10550634B1
公开(公告)日：2020-02-04
申请号：US15682676
申请日：2017-08-22
申请人： Matthew Holland
发明人： Matthew Holland
IPC分类号： E06B11/02 , E06B9/06 , E04B2/74 , E06B9/80 , E06B9/00 , E04F11/18
摘要： The child safety gate system is a modular barricade that forms a barricade in a door selected from a plurality of previously identified doors. The child safety gate system comprises a gate, a plurality of pivot frames and a plurality of latch frames. There is a one to one correspondence between any pivot frame selected from the plurality of pivot frames and a latch frame selected from the plurality of latch frames. Each door contained within the plurality of previously identified doors has installed in it a pivot frame the corresponding latch frame. The selected pivot frame and the corresponding latch frame are used to removably attach the gate to any selected door. This modular behavior allows the installation of the barricade structure in any door selected from the plurality of previously identified doors as required.

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