会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明申请
    • MAKING FILMS COMPOSED OF SEMICONDUCTOR NANOCRYSTALS
    • 制备半导体纳米晶体的薄膜
    • US20110076839A1
    • 2011-03-31
    • US12568980
    • 2009-09-29
    • Xiaofan RenKeith B. Kahen
    • Xiaofan RenKeith B. Kahen
    • H01L21/20
    • H01L21/02551C09K11/025C09K11/883H01L21/02628
    • A method of making a film of large II-VI nanocrystals, including: providing a mixture of column II, column VI chemical precursors, and coordinating solvents selected from amines, phosphines, phosphine oxides, esters, ethers, or combinations thereof by: injecting under heat a higher molar quantity of column II chemical precursor than column VI chemical precursor; and ii) increasing the ratio of column VI to column II chemical precursors during the course of the reaction while still heating the mixture until the molar ratio of column VI chemical precursor to column II chemical precursor is in a range of 1 to 10; heating the mixture to grow large nanocrystals functionalized with coordinating ligands; washing the grown nanocrystals to remove the unreacted precursors and excess coordinating solvents; and d) depositing the large II-VI nanocrystals on a substrate in order to form the film.
    • 制备大型II-VI纳米晶体的膜的方法,包括:提供柱II,VI族化学前体和选自胺,膦,氧化膦,酯,醚或其组合的配位溶剂的混合物,方法如下: 加热比第VI列化学前体更高摩尔量的柱II化学前体; 和ii)在反应过程中增加第VI列与第II列化学前体的比例,同时仍然加热混合物,直到列VI化学前体与第II列化学前体的摩尔比在1至10的范围内; 加热混合物以生长用配位配位体官能化的大的纳米晶体; 洗涤生长的纳米晶体以除去未反应的前体和过量的配位溶剂; 以及d)将大的II-VI纳米晶体沉积在基底上以形成膜。