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1. 发明授权

US06379492B2 Corrosion resistant coating 失效
标题翻译：耐腐蚀涂层
公开(公告)号：US06379492B2
公开(公告)日：2002-04-30
申请号：US09428140
申请日：1999-10-26
申请人： Won Bang , Chen-An Chen , Shankar Venkataraman , Ajay Bhatnagar
发明人： Won Bang , Chen-An Chen , Shankar Venkataraman , Ajay Bhatnagar
IPC分类号： C23F102
CPC分类号： C23C14/5806 , C23C14/0694 , C23C16/4404 , H01J37/32477 , H01J37/32559
摘要： A corrosion resistant part comprising a protective coating formed upon a component part. The protective coating comprises magnesium fluoride, which is substantially pure and substantially dense. Preferably, the coating is at least about 99% pure and at least about 85% dense. For example, such a coating can be formed upon the component part at a temperature of at least about 250° C. and a pressure of not more than about 1×10−5 torr. The resulting coating is effective in protecting the surfaces of an aluminum nitride heater against corrosion within a fluorine-containing environment inside a chemical vapor deposition chamber.
摘要翻译：一种耐腐蚀部件，包括形成在部件上的保护涂层。保护性涂层包括氟化镁，其基本上纯且基本上致密。优选地，涂层为至少约99％纯度且至少约85％致密。例如，这样的涂层可以在至少约250℃的温度和不大于约1×10-5乇的压力下在组分部分上形成。所得到的涂层有效地保护氮化铝加热器的表面免受化学气相沉积室内的含氟环境中的腐蚀。

2. 发明授权

US5948958A Method and apparatus for verifying the calibration of semiconductor processing equipment 失效
标题翻译：用于验证半导体加工设备的校准的方法和装置
公开(公告)号：US5948958A
公开(公告)日：1999-09-07
申请号：US144722
申请日：1998-09-01
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： H01L21/00 , G01F1/00
CPC分类号： H01L21/67253
摘要： A semiconductor processing equipment calibration verification procedure is provided that does not rely on pressure rises from laboratory reference chambers and that is insensitive to in-chamber variations that affect processing gas pressure rise but do not affect the underlying process. A baseline pressure rise ratio is computed based on an inert gas pressure rise and a processing gas pressure rise produced when an inert gas and a processing gas, respectively, are flowed into a processing chamber. Subsequent, preferably periodic, calibration verification procedures are performed and new pressure rise ratios are computed. When a new pressure rise ratio differs from the baseline pressure rise ratio by more than a predetermined amount, the calibration of the semiconductor processing equipment is rejected.
摘要翻译：提供半导体处理设备校准验证程序，其不依赖于来自实验室参考室的压力升高，并且对于影响处理气体压力升高但不影响底层过程的室内变化不敏感。基于惰性气体压力升高和当惰性气体和处理气体分别流入处理室时产生的处理气体压力升高来计算基线压力上升比。执行随后的，优选周期性的校准验证程序，并计算新的压力上升比。当新的压力上升比与基准压力上升比不同的预定量时，半导体处理设备的校准被拒绝。

3. 发明授权

US06793965B2 Clog resistant injection valve 失效
标题翻译：阻塞注射阀
公开(公告)号：US06793965B2
公开(公告)日：2004-09-21
申请号：US09902283
申请日：2001-07-10
申请人： Chen-An Chen , Won Bang
发明人： Chen-An Chen , Won Bang
IPC分类号： C23C1600
CPC分类号： C23C16/4485 , C23C16/4407 , Y10T137/0391 , Y10T137/87676
摘要： An injection valve is provided with vibration to dislodge residue therefrom and to thus avoid injection valve clogging. A wave generator which preferably generates an ultrasonic sine wave, is operatively coupled to the vaporization region of the injection valve (i.e., via the injection block, via a piezoelectric valve controller, etc.). The wave may be applied to the injection valve whenever vaporization takes place, in which case a removable trap is coupled between the injection valve and the processing chamber. Alternatively, the sonic wave may be applied to the injection valve only in conjunction with a chamber cleaning process.
摘要翻译：喷射阀具有振动以从其中排出残留物，从而避免喷射阀堵塞。优选地产生超声正弦波的波发生器可操作地耦合到喷射阀的蒸发区域（即，经由喷射块，经由压电阀控制器等）。每当发生气化时，波浪都可以施加到喷射阀，在这种情况下，可拆卸的捕集器连接在喷射阀和处理室之间。或者，声波可以仅与室清洁过程一起施加到喷射阀。

4. 发明授权

US06235120B1 Coating for parts used in semiconductor processing chambers 失效
标题翻译：用于半导体处理室的部件涂层
公开(公告)号：US06235120B1
公开(公告)日：2001-05-22
申请号：US09105970
申请日：1998-06-26
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： C23D500
CPC分类号： C23C16/4404 , Y10S156/914
摘要： Improved semiconductor processing chamber parts are provided. An improved part is made of an underlying part having both an intermediate coating and a surface layer applied thereto. The intermediate coating includes a plurality of layers each having a CTE intermediate the CTE of the underlying part and the CTE of the surface layer. The intermediate coating reduces the stress between any two layers, allowing use of underlying parts and surface layers having dissimilar CTEs. The universe of acceptable materials for use within a semiconductor processing chamber is expanded, as fewer selection criteria exist for a given layer.
摘要翻译：提供了改进的半导体处理室部件。改进的部分由具有中间涂层和施加到其上的表面层的下面部分制成。中间涂层包括多个层，每个层具有CTE中间层的底层部分的CTE和表面层的CTE。中间涂层减少任何两层之间的应力，允许使用具有不同CTE的下层部件和表面层。在半导体处理室内使用的可接受的材料的宇宙被扩展，因为给定层的选择标准较少。

5. 发明授权

US06346481B1 Method of reducing pitting of a coated heater 失效
标题翻译：减少涂层加热器点蚀的方法
公开(公告)号：US06346481B1
公开(公告)日：2002-02-12
申请号：US09637839
申请日：2000-08-12
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： H01L21311
CPC分类号： H01J37/32431 , C23C16/4404 , C23C16/46 , H01J2237/2001
摘要： Provided herein is a method of depositing a film on a substrate in a high temperature chemical vapor deposition (CVD) reactor, comprising the steps of polishing sharp corner(s) of the surface of a heater, wherein the heater provides heat to the substrate for deposition; coating the polished heater surface with a coating material; and depositing a film on the substrate in the CVD reactor, wherein the substrate is heated through the coated polished heater. Such method of polishing may also be used for reducing pitting of a coated heater and protecting the heater from corrosive environment in a CVD reactor.
摘要翻译：本文提供了一种在高温化学气相沉积（CVD）反应器中在衬底上沉积膜的方法，包括以下步骤：抛光加热器表面的尖锐角，其中加热器向衬底提供热量，用于沉积用涂料涂覆抛光的加热器表面; 以及在所述CVD反应器中在所述衬底上沉积膜，其中所述衬底通过涂覆的抛光加热器被加热。这种抛光方法也可用于减少涂覆的加热器的点蚀并且保护加热器免受CVD反应器中的腐蚀环境的影响。

6. 发明授权

US06267820B1 Clog resistant injection valve 有权
标题翻译：阻塞注射阀
公开(公告)号：US06267820B1
公开(公告)日：2001-07-31
申请号：US09248789
申请日：1999-02-12
申请人： Chen-An Chen , Won Bang
发明人： Chen-An Chen , Won Bang
IPC分类号： C23C1600
CPC分类号： C23C16/4485 , C23C16/4407 , Y10T137/0391 , Y10T137/87676
摘要： An injection valve is provided with vibration to dislodge residue therefrom and to thus avoid injection valve clogging. A wave generator which preferably generates an ultrasonic sine wave, is operatively coupled to the vaporization region of the injection valve (i.e., via the injection block, via a piezoelectric valve controller, etc.). The wave may be applied to the injection valve whenever vaporization takes place, in which case a removable trap is coupled between the injection valve and the processing chamber. Alternatively, the sonic wave may be applied to the injection valve only in conjunction with a chamber cleaning process.
摘要翻译：喷射阀具有振动以从其中排出残留物，从而避免喷射阀堵塞。优选地产生超声正弦波的波发生器可操作地耦合到喷射阀的蒸发区域（即，经由喷射块，经由压电阀控制器等）。每当发生气化时，波浪都可以施加到喷射阀，在这种情况下，可拆卸的捕集器连接在喷射阀和处理室之间。或者，声波可以仅与室清洁过程一起施加到喷射阀。

7. 发明授权

US06261374B1 Clog resistant gas delivery system 有权
标题翻译：堵塞气体输送系统
公开(公告)号：US06261374B1
公开(公告)日：2001-07-17
申请号：US09163282
申请日：1998-09-29
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： C23C1600
CPC分类号： H01J37/3244 , C23C16/4401 , C23C16/4485
摘要： The present invention recognizes that reactions between processing liquids is a major source of residue which clogs gas delivery systems. To avoid reactions between or among vaporized processing liquids, an inventive gas delivery system provides parallel delivery of vaporized processing liquids. The gas delivery system may be configured using any conventional vaporizing mechanism such as bubblers or injection valves. Preferably, liquid precursors TEPO, TEOS and TEB are vaporized in parallel within three injection valves, the vaporized processing liquids then are flowed into a common line and delivered to a chemical vapor deposition chamber for processing semiconductor wafers. In the unlikely event the line becomes clogged, the line can be easily replaced. Most preferably a single source of carrier gas controlled by a single mass flow controller supplies carrier gas to all three injection valves.
摘要翻译：本发明认识到处理液体之间的反应是堵塞气体输送系统的残留物的主要来源。为了避免蒸发的处理液体之间或之间的反应，本发明的气体输送系统提供蒸发的处理液体的平行输送。气体输送系统可以使用任何常规的蒸发机构（例如起泡器或喷射阀）来构造。优选地，液体前体TEPO，TEOS和TEB在三个喷射阀内平行蒸发，然后蒸发的处理液体流入公共管线并且被输送到用于处理半导体晶片的化学气相沉积室。在不太可能的情况下，线路堵塞，线路可以轻松更换。最优选地，由单个质量流量控制器控制的单一载气源将载气供应到所有三个喷射阀。

8. 发明授权

US07754282B2 Adjusting a spacing between a gas distribution member and a substrate support 失效
标题翻译：调整气体分配构件和基底支撑件之间的间距
公开(公告)号：US07754282B2
公开(公告)日：2010-07-13
申请号：US12182345
申请日：2008-07-30
申请人： Kirby Floyd , Adrian Q. Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kun Victor Wang
发明人： Kirby Floyd , Adrian Q. Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kun Victor Wang
IPC分类号： C23C16/52
CPC分类号： H01L21/67259 , C23C16/455 , C23C16/4583 , H01L21/02129 , H01L21/02271 , H01L21/31625 , H01L21/68
摘要： A method of adjusting a spacing between a gas distribution member and a substrate support includes forming a layer on a substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations.
摘要翻译：调整气体分配构件和基板支撑件之间的间隔的方法包括在设置在基板支撑件上的基板上形成层; 测量衬底上的层的厚度; 并且计算衬底上的参考位置与衬底上的多个剩余位置之间的厚度差异。该方法还包括基于参考位置和其余位置之间的厚度差来计算相对于参考位置的剩余位置的间隔调整量。

9. 发明申请

US20060196603A1 Gas baffle and distributor for semiconductor processing chamber 有权
标题翻译：用于半导体处理室的气体挡板和分配器
公开(公告)号：US20060196603A1
公开(公告)日：2006-09-07
申请号：US11075527
申请日：2005-03-07
申请人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Won Bang , David Sun , Yen-Kun Victor Wang
发明人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Won Bang , David Sun , Yen-Kun Victor Wang
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/3244 , H01J2237/3321
摘要： Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.
摘要翻译：本发明的技术涉及将沉积气体分布到基底上。在一个实施例中，提供了用于处理室的气体分配器。气体分配器包括具有气体偏转表面和气体分配器面的主体。气体偏转表面限定清洁气体通路。气体分配器面设置在与气体偏转表面相对的主体的相反侧上，并朝向衬底支撑构件。气体分配器面包括升高的台阶和穿过升高台阶的至少一组孔。所述至少一组孔适于将沉积气体分布在位于所述基板支撑构件上的基板上。

10. 发明授权

US07192486B2 Clog-resistant gas delivery system 失效
标题翻译：防堵气体输送系统
公开(公告)号：US07192486B2
公开(公告)日：2007-03-20
申请号：US10222398
申请日：2002-08-15
申请人： Won Bang , Yen-Kun Wang , Steve Ghanayem
发明人： Won Bang , Yen-Kun Wang , Steve Ghanayem
IPC分类号： C23C16/00 , C23C16/448 , C23C16/52
CPC分类号： C23C16/45512 , C23C16/4401 , C23C16/4481 , C23C16/455 , C23C16/45561 , C23C16/52
摘要： Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing chamber and relatively far downstream from the mass flow controllers and other flow-constricting components of the gas delivery system. The continuous high flow of gas provided by the devoted mass flow controllers may maintain a sufficiently high pressures on the delivery lines to prevent partial clogging from leading to a further drop in pressure and complete obstruction of the delivery line.
摘要翻译：相互反应的处理气体通过分开的输送管线平行于处理室提供，包括专用于每条管线的质量流量控制器。平行输送管线位于靠近处理室的混合歧管中，并且与气体输送系统的质量流量控制器和其它流量收缩部件相比较远的下游。由专用质量流量控制器提供的持续的高流量气体可以在输送管线上保持足够高的压力，以防止部分堵塞从而导致压力的进一步下降和输送管线的完全阻塞。

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