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1. 发明授权

US07754282B2 Adjusting a spacing between a gas distribution member and a substrate support 失效
标题翻译：调整气体分配构件和基底支撑件之间的间距
公开(公告)号：US07754282B2
公开(公告)日：2010-07-13
申请号：US12182345
申请日：2008-07-30
申请人： Kirby Floyd , Adrian Q. Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kun Victor Wang
发明人： Kirby Floyd , Adrian Q. Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kun Victor Wang
IPC分类号： C23C16/52
CPC分类号： H01L21/67259 , C23C16/455 , C23C16/4583 , H01L21/02129 , H01L21/02271 , H01L21/31625 , H01L21/68
摘要： A method of adjusting a spacing between a gas distribution member and a substrate support includes forming a layer on a substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations.
摘要翻译：调整气体分配构件和基板支撑件之间的间隔的方法包括在设置在基板支撑件上的基板上形成层; 测量衬底上的层的厚度; 并且计算衬底上的参考位置与衬底上的多个剩余位置之间的厚度差异。该方法还包括基于参考位置和其余位置之间的厚度差来计算相对于参考位置的剩余位置的间隔调整量。

2. 发明申请

US20080286444A1 In Situ Substrate Holder Leveling Method and Apparatus 失效
标题翻译：原位基板固定器调平方法和装置
公开(公告)号：US20080286444A1
公开(公告)日：2008-11-20
申请号：US12182345
申请日：2008-07-30
申请人： Kirby Floyd , Adrian Q. Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kung Victor Wang
发明人： Kirby Floyd , Adrian Q. Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kung Victor Wang
IPC分类号： C23C16/52
CPC分类号： H01L21/67259 , C23C16/455 , C23C16/4583 , H01L21/02129 , H01L21/02271 , H01L21/31625 , H01L21/68
摘要： Embodiments of the present invention are directed to adjusting the spacing between the substrate support and the faceplate of the gas distribution member to achieve improved uniformity of the layer formed on the substrate. One embodiment of the present invention is directed to a method of adjusting a spacing between a gas distribution member and a substrate support disposed generally opposite from the gas distribution member, wherein the substrate support is configured to support a substrate on which to form a layer with improved thickness uniformity. The method comprises forming a layer on the substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations. The spacing adjustment amount is positive to increase the spacing between the substrate support at the location and the gas distribution member if the thickness is greater at the location than at the reference location. The spacing adjustment amount is negative to decrease the spacing between the substrate support at the location if the thickness is smaller at the location than at the reference location.
摘要翻译：本发明的实施例涉及调整衬底支撑件和气体分配构件的面板之间的间隔，以实现在衬底上形成的层的改进的均匀性。本发明的一个实施例涉及一种调节气体分配构件和大致与气体分配构件相对设置的衬底支撑件之间的间隔的方法，其中衬底支撑件构造成支撑衬底，以在其上形成具有改善厚度均匀性。该方法包括在设置在基板支撑件上的基板上形成一层; 测量衬底上的层的厚度; 并且计算衬底上的参考位置与衬底上的多个剩余位置之间的厚度差异。该方法还包括基于参考位置和其余位置之间的厚度差来计算相对于参考位置的剩余位置的间隔调整量。如果位置处的厚度大于在参考位置处的厚度，则间距调节量是正的以增加位置处的衬底支撑件与气体分配构件之间的间隔。如果在位置处的厚度小于在参考位置处的厚度，则间距调节量是负的，以减小位置处的衬底支撑件之间的间隔。

3. 发明授权

US07413612B2 In situ substrate holder leveling method and apparatus 失效
标题翻译：原位衬底保持器调平方法和装置
公开(公告)号：US07413612B2
公开(公告)日：2008-08-19
申请号：US10618187
申请日：2003-07-10
申请人： Kirby Floyd , Adrian Q. Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kung Victor Wang
发明人： Kirby Floyd , Adrian Q. Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kung Victor Wang
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67259 , C23C16/455 , C23C16/4583 , H01L21/02129 , H01L21/02271 , H01L21/31625 , H01L21/68
摘要： Embodiments of the present invention are directed to adjusting the spacing between the substrate support and the faceplate of the gas distribution member to achieve improved uniformity of the layer formed on the substrate. One embodiment of the present invention is directed to a method of adjusting a spacing between a gas distribution member and a substrate support disposed generally opposite from the gas distribution member, wherein the substrate support is configured to support a substrate on which to form a layer with improved thickness uniformity. The method comprises forming a layer on the substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations. The spacing adjustment amount is positive to increase the spacing between the substrate support at the location and the gas distribution member if the thickness is greater at the location than at the reference location. The spacing adjustment amount is negative to decrease the spacing between the substrate support at the location if the thickness is smaller at the location than at the reference location.
摘要翻译：本发明的实施例涉及调整衬底支撑件和气体分配构件的面板之间的间隔，以实现在衬底上形成的层的改进的均匀性。本发明的一个实施例涉及一种调节气体分配构件和大致与气体分配构件相对设置的衬底支撑件之间的间隔的方法，其中衬底支撑件构造成支撑衬底，以在其上形成具有改善厚度均匀性。该方法包括在设置在基板支撑件上的基板上形成一层; 测量衬底上的层的厚度; 并且计算衬底上的参考位置与衬底上的多个剩余位置之间的厚度差异。该方法还包括基于参考位置和其余位置之间的厚度差来计算相对于参考位置的剩余位置的间隔调整量。如果位置处的厚度大于在参考位置处的厚度，则间距调节量是正的以增加位置处的衬底支撑件与气体分配构件之间的间隔。如果在位置处的厚度小于在参考位置处的厚度，则间距调节量是负的，以减小位置处的衬底支撑件之间的间隔。

4. 发明申请

US20050006556A1 In situ substrate holder leveling method and apparatus 失效
标题翻译：原位衬底保持器调平方法和装置
公开(公告)号：US20050006556A1
公开(公告)日：2005-01-13
申请号：US10618187
申请日：2003-07-10
申请人： Kirby Floyd , Adrian Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kung Wang
发明人： Kirby Floyd , Adrian Montgomery , Jennifer Gonzales , Won Bang , Rong Pan , Amna Mohammed , Yen-Kung Wang
IPC分类号： C23C16/455 , C23C16/458 , H01L21/00 , H01L21/316 , H01L21/68 , F16M13/00
CPC分类号： H01L21/67259 , C23C16/455 , C23C16/4583 , H01L21/02129 , H01L21/02271 , H01L21/31625 , H01L21/68
摘要： Embodiments of the present invention are directed to adjusting the spacing between the substrate support and the faceplate of the gas distribution member to achieve improved uniformity of the layer formed on the substrate. One embodiment of the present invention is directed to a method of adjusting a spacing between a gas distribution member and a substrate support disposed generally opposite from the gas distribution member, wherein the substrate support is configured to support a substrate on which to form a layer with improved thickness uniformity. The method comprises forming a layer on the substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations. The spacing adjustment amount is positive to increase the spacing between the substrate support at the location and the gas distribution member if the thickness is greater at the location than at the reference location. The spacing adjustment amount is negative to decrease the spacing between the substrate support at the location if the thickness is smaller at the location than at the reference location.
摘要翻译：本发明的实施例涉及调整衬底支撑件和气体分配构件的面板之间的间隔，以实现在衬底上形成的层的改进的均匀性。本发明的一个实施例涉及一种调节气体分配构件和大致与气体分配构件相对设置的衬底支撑件之间的间隔的方法，其中衬底支撑件构造成支撑衬底，以在其上形成具有改善厚度均匀性。该方法包括在设置在基板支撑件上的基板上形成一层; 测量衬底上的层的厚度; 并且计算衬底上的参考位置与衬底上的多个剩余位置之间的厚度差异。该方法还包括基于参考位置和其余位置之间的厚度差来计算相对于参考位置的剩余位置的间隔调整量。如果位置处的厚度大于在参考位置处的厚度，则间距调节量是正的以增加位置处的衬底支撑件与气体分配构件之间的间隔。如果在位置处的厚度小于在参考位置处的厚度，则间距调节量是负的，以减小位置处的衬底支撑件之间的间隔。

5. 发明申请

US20060196603A1 Gas baffle and distributor for semiconductor processing chamber 有权
标题翻译：用于半导体处理室的气体挡板和分配器
公开(公告)号：US20060196603A1
公开(公告)日：2006-09-07
申请号：US11075527
申请日：2005-03-07
申请人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Won Bang , David Sun , Yen-Kun Victor Wang
发明人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Won Bang , David Sun , Yen-Kun Victor Wang
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/3244 , H01J2237/3321
摘要： Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.
摘要翻译：本发明的技术涉及将沉积气体分布到基底上。在一个实施例中，提供了用于处理室的气体分配器。气体分配器包括具有气体偏转表面和气体分配器面的主体。气体偏转表面限定清洁气体通路。气体分配器面设置在与气体偏转表面相对的主体的相反侧上，并朝向衬底支撑构件。气体分配器面包括升高的台阶和穿过升高台阶的至少一组孔。所述至少一组孔适于将沉积气体分布在位于所述基板支撑构件上的基板上。

6. 发明授权

US5948958A Method and apparatus for verifying the calibration of semiconductor processing equipment 失效
标题翻译：用于验证半导体加工设备的校准的方法和装置
公开(公告)号：US5948958A
公开(公告)日：1999-09-07
申请号：US144722
申请日：1998-09-01
申请人： Won Bang , Chen-An Chen
发明人： Won Bang , Chen-An Chen
IPC分类号： H01L21/00 , G01F1/00
CPC分类号： H01L21/67253
摘要： A semiconductor processing equipment calibration verification procedure is provided that does not rely on pressure rises from laboratory reference chambers and that is insensitive to in-chamber variations that affect processing gas pressure rise but do not affect the underlying process. A baseline pressure rise ratio is computed based on an inert gas pressure rise and a processing gas pressure rise produced when an inert gas and a processing gas, respectively, are flowed into a processing chamber. Subsequent, preferably periodic, calibration verification procedures are performed and new pressure rise ratios are computed. When a new pressure rise ratio differs from the baseline pressure rise ratio by more than a predetermined amount, the calibration of the semiconductor processing equipment is rejected.
摘要翻译：提供半导体处理设备校准验证程序，其不依赖于来自实验室参考室的压力升高，并且对于影响处理气体压力升高但不影响底层过程的室内变化不敏感。基于惰性气体压力升高和当惰性气体和处理气体分别流入处理室时产生的处理气体压力升高来计算基线压力上升比。执行随后的，优选周期性的校准验证程序，并计算新的压力上升比。当新的压力上升比与基准压力上升比不同的预定量时，半导体处理设备的校准被拒绝。

7. 发明授权

US07192486B2 Clog-resistant gas delivery system 失效
标题翻译：防堵气体输送系统
公开(公告)号：US07192486B2
公开(公告)日：2007-03-20
申请号：US10222398
申请日：2002-08-15
申请人： Won Bang , Yen-Kun Wang , Steve Ghanayem
发明人： Won Bang , Yen-Kun Wang , Steve Ghanayem
IPC分类号： C23C16/00 , C23C16/448 , C23C16/52
CPC分类号： C23C16/45512 , C23C16/4401 , C23C16/4481 , C23C16/455 , C23C16/45561 , C23C16/52
摘要： Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing chamber and relatively far downstream from the mass flow controllers and other flow-constricting components of the gas delivery system. The continuous high flow of gas provided by the devoted mass flow controllers may maintain a sufficiently high pressures on the delivery lines to prevent partial clogging from leading to a further drop in pressure and complete obstruction of the delivery line.
摘要翻译：相互反应的处理气体通过分开的输送管线平行于处理室提供，包括专用于每条管线的质量流量控制器。平行输送管线位于靠近处理室的混合歧管中，并且与气体输送系统的质量流量控制器和其它流量收缩部件相比较远的下游。由专用质量流量控制器提供的持续的高流量气体可以在输送管线上保持足够高的压力，以防止部分堵塞从而导致压力的进一步下降和输送管线的完全阻塞。

8. 发明授权

US07011710B2 Concentration profile on demand gas delivery system (individual divert delivery system) 失效
公开(公告)号：US07011710B2
公开(公告)日：2006-03-14
申请号：US09832168
申请日：2001-04-10
申请人： Won Bang , Yen Kun Wang , Yeh Jen Kao
发明人： Won Bang , Yen Kun Wang , Yeh Jen Kao
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/401 , C23C16/45523 , C23C16/45561
摘要： Apparatus and method for delivering processing gas are provided. The apparatus for delivering processing gas from a vaporizer to a processing system comprises: a valve connected between the vaporizer and the processing system, the valve having a valve input connected to a vaporizer output and a first valve output connected to a processing system input and a second valve output connected to a bypass line; and a controller for switching the valve between the first valve output and the second valve output. The apparatus may further comprise: a second valve connected between a carrier gas source, a divert gas source and the vaporizer, the second valve having a first valve input connected to the carrier gas source, a second valve input connected to the divert gas source, and a valve output connected to a vaporizer input.

9. 发明申请

US20050101155A1 Ramp temperature techniques for improved mean wafer before clean 有权
标题翻译：用于在清洁之前改善平均晶片的斜坡温度技术
公开(公告)号：US20050101155A1
公开(公告)日：2005-05-12
申请号：US10712464
申请日：2003-11-12
申请人： Won Bang , Yen-Kun Wang , Kevin Mukai , Theresa Marie Liu
发明人： Won Bang , Yen-Kun Wang , Kevin Mukai , Theresa Marie Liu
IPC分类号： C23C16/44 , C23C16/46 , H01L21/316 , H01L21/762 , H01L21/76 , H01L21/302 , H01L21/31 , H01L21/461 , H01L21/469
CPC分类号： H01L21/02129 , C23C16/4405 , C23C16/46 , H01J37/32862 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/31625 , H01L21/76224
摘要： A method of operating a substrate processing chamber comprising transferring a first substrate into the substrate processing chamber and heating the substrate to a first temperature of at least 510° C.; depositing an insulating layer over the first substrate while reducing the temperature of the substrate from the first temperature to a second temperature that is lower than the first temperature; transferring the first substrate out of the substrate processing chamber; removing unwanted deposition material formed on interior surfaces of the chamber during the depositing step by introducing reactive halogen species into the chamber while increasing the temperature of chamber; transferring a second substrate into the substrate processing chamber and heating the substrate to the first temperature; and depositing an insulating layer over the second substrate while reducing the temperature of the substrate from the first temperature to the second temperature.
摘要翻译：一种操作衬底处理室的方法，包括将第一衬底转移到衬底处理室中并将衬底加热至至少510℃的第一温度; 在第一衬底上沉积绝缘层，同时将衬底的温度从第一温度降低到低于第一温度的第二温度; 将所述第一衬底转移出所述衬底处理室; 在沉积步骤期间，通过将反应性卤素物质引入室中，同时增加室的温度来除去在室的内表面上形成的不需要的沉积材料; 将第二衬底转移到衬底处理室中并将衬底加热到第一温度; 以及在第二衬底上沉积绝缘层，同时将衬底的温度从第一温度降低到第二温度。

10. 发明授权

US6110556A Lid assembly for a process chamber employing asymmetric flow geometries 失效
标题翻译：采用不对称流动几何形状的处理室的盖组件
公开(公告)号：US6110556A
公开(公告)日：2000-08-29
申请号：US953444
申请日：1997-10-17
申请人： Won Bang , Ellie Yieh , Thanh Pham
发明人： Won Bang , Ellie Yieh , Thanh Pham
IPC分类号： C23C16/44 , C23C16/455 , H01L21/00 , H01L21/205 , B32B3/02 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455 , H01L21/67069 , Y10T428/21 , Y10T428/218
摘要： A chemical vapor deposition (CVD) system of the type having an enclosure housing a process chamber and a supply of cleaning gas, features a lid having a base plate with opposed first and second major surfaces and a plurality of throughways extending therebetween to provide an asymmetric flow of cleaning gas into the chamber. Specifically, a subportion of the second major surface lies in a plane of truncation and faces the process chamber when the lid is in a closed position. The remaining portions of the second major surface are recessed, defining central and annular recesses. The annular recess has a base surface and two spaced-apart side surfaces extending from the base surface and terminating proximate to the plane of truncation. The plurality of throughways consists of primary and secondary throughways, each of which extends from an opening in the first major surface and terminates in an orifice. The orifices associated with the secondary throughways are positioned in one of the side surfaces of the annular recess. The orifices associated with the primary throughways lie in the plane that extends orthogonally to the spaced-apart side surfaces.
摘要翻译：具有容纳处理室和清洁气体供应的外壳的类型的化学气相沉积（CVD）系统具有盖，其具有带有相对的第一和第二主表面的基板和在其之间延伸的多个通道，以提供不对称的清洁气体流入室内。具体地说，当盖子处于关闭位置时，第二主表面的一个子部分位于截面上并面向处理室。第二主表面的其余部分是凹进的，限定中心和环形凹槽。环形凹部具有基部表面和从基部表面延伸并且接近截面的端部延伸的两个间隔开的侧表面。多个通道由主通道和次通道组成，每个通道从第一主表面中的开口延伸并且终止于孔中。与次级通道相关联的孔定位在环形凹槽的一个侧表面中。与主通道相关联的孔口位于与间隔开的侧表面垂直延伸的平面中。

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