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1. 发明授权

US06750483B2 Silicon-germanium bipolar transistor with optimized germanium profile 有权
标题翻译：具有优化锗型材的硅锗双极晶体管
公开(公告)号：US06750483B2
公开(公告)日：2004-06-15
申请号：US10200541
申请日：2002-07-22
申请人： Wolfgang Klein , Rudolf Lachner , Wolfgang Molzer
发明人： Wolfgang Klein , Rudolf Lachner , Wolfgang Molzer
IPC分类号： H01L29737
CPC分类号： H01L29/165 , H01L29/7378
摘要： A silicon-germanium bipolar transistor includes a silicon substrate in which a first n-doped emitter region, a second p-doped base region adjoining the latter and a third n-doped collector region adjoining the latter, are formed. A first space charge zone is formed between the emitter region and the base region and a second space charge zone is formed between the base region and the collector region. The base region and an edge zone of the adjoining emitter region are alloyed with germanium. The germanium concentration in the emitter region rises toward the base region. The germanium concentration in a junction region containing the first space charge zone rises less sharply than in the emitter region or decreases and, in the base region, it initially again rises more sharply than in the junction region.
摘要翻译：硅 - 锗双极晶体管包括硅衬底，其中形成有第一n掺杂发射极区域，与之相邻的第二p掺杂基极区域和与之相邻的第三n掺杂集电极区域。在发射极区域和基极区域之间形成第一空间电荷区域，并且在基极区域和集电极区域之间形成第二空间电荷区域。邻接发射极区域的基极区域和边缘区域与锗合金化。发射极区域中的锗浓度朝向基极区域上升。包含第一空间电荷区的结区中的锗浓度比发射极区域急剧上升或降低，并且在基极区域中其初始地再次比在结区域中急剧上升。

2. 发明申请

US20120104574A1 INTEGRATED ANTENNAS IN WAFER LEVEL PACKAGE 有权
标题翻译：集成天线在水平包装
公开(公告)号：US20120104574A1
公开(公告)日：2012-05-03
申请号：US12914274
申请日：2010-10-28
申请人： Josef Boeck , Rudolf Lachner , Maciej Wojnowski , Thorsten Meyer
发明人： Josef Boeck , Rudolf Lachner , Maciej Wojnowski , Thorsten Meyer
IPC分类号： H01L23/552 , H01L21/50 , H01L23/52
CPC分类号： H01L24/20 , G01S7/032 , H01L23/49816 , H01L23/66 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/19 , H01L24/32 , H01L24/81 , H01L24/96 , H01L2223/6677 , H01L2224/0401 , H01L2224/11318 , H01L2224/1132 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/1319 , H01L2224/13191 , H01L2224/13299 , H01L2224/14051 , H01L2224/141 , H01L2224/14505 , H01L2224/14517 , H01L2224/16225 , H01L2224/17517 , H01L2224/21 , H01L2224/2101 , H01L2224/211 , H01L2224/215 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/831 , H01L2924/01029 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/18162 , H01L2924/3512 , H01L2924/384 , H01Q1/44 , H01Q17/00 , H01Q23/00 , H05K3/3436 , H01L2924/014 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor module having one or more integrated antennas in a single package is provided herein to comprise a bonding interconnect structure having a plurality of individual bonding elements that are confined to a relatively small area of the bottom of a package. In particular, the semiconductor module comprises a bonding interconnect structure configured to connect an integrated package to a printed circuit board (PCB), wherein the integrated antenna structures are located at greater center-to-center distance from the IC device than the three dimensional interconnect structures. Therefore, the bonding interconnect structures are confined to a connection area that causes a part of the package containing the one or more antenna structures to extend beyond the bonding interconnect structure as a cantilevered structure. Such a bonding interconnect structure result in a package that is in contact with a PCB at a relatively small area that supports the load of the package.
摘要翻译：本文提供了在单个封装中具有一个或多个集成天线的半导体模块，其包括具有限定在封装的底部的较小区域的多个单独的结合元件的接合互连结构。特别地，半导体模块包括被配置为将集成封装连接到印刷电路板（PCB）的接合互连结构，其中集成天线结构位于距离IC器件更大的中心到距离三维互连结构。因此，接合互连结构被限制在连接区域上，该连接区域使得包含一个或多个天线结构的封装的一部分延伸超过作为悬臂结构的接合互连结构。这种接合互连结构导致在支撑封装负载的较小区域处与PCB接触的封装。

3. 发明申请

US20110037163A1 DEVICE INCLUDING A RING-SHAPED METAL STRUCTURE AND METHOD 有权
标题翻译：包括环形金属结构和方法的装置
公开(公告)号：US20110037163A1
公开(公告)日：2011-02-17
申请号：US12540491
申请日：2009-08-13
申请人： Rudolf Lachner , Josef Boeck , Klaus Aufinger , Herbert Knapp
发明人： Rudolf Lachner , Josef Boeck , Klaus Aufinger , Herbert Knapp
IPC分类号： H01L23/48 , H01L21/60
CPC分类号： H01L23/367 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3107 , H01L23/3128 , H01L23/4334 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/92 , H01L2224/97 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/1423 , H01L2924/15174 , H01L2924/15311 , H01L2924/18162 , H01L2924/3025 , H01L2224/96 , H01L2224/82
摘要： A device includes a semiconductor chip with a ring-shaped metal structure extending along the contour of a first main surface of the semiconductor chip. An encapsulation body encapsulates the semiconductor chip and defines a second main surface. An array of external contact pads attaches to the second main surface of the encapsulation body, and at least one external contact pad of the array of external contact pads electrically couples to the ring-shaped metal structure.
摘要翻译：一种器件包括具有沿着半导体芯片的第一主表面的轮廓延伸的环形金属结构的半导体芯片。封装体封装半导体芯片并限定第二主表面。外部接触焊盘的阵列连接到封装体的第二主表面，并且外部接触焊盘阵列中的至少一个外部接触焊盘电耦合到环形金属结构。

4. 发明申请

US20080287085A1 RF front-end for a radar system 有权
标题翻译： RF前端用于雷达系统
公开(公告)号：US20080287085A1
公开(公告)日：2008-11-20
申请号：US11803343
申请日：2007-05-14
申请人： Hans Peter Forstner , Rudolf Lachner
发明人： Hans Peter Forstner , Rudolf Lachner
IPC分类号： H04B1/18
CPC分类号： G01S7/032 , G01S13/931 , H01L2223/6677 , H01L2224/48091 , H01L2224/48247
摘要： An RF sender/receiver front-end is disclosed comprising a terminal for receiving an oscillator signal, at least one distribution unit for distributing the oscillator signal into different signal paths, two or more mixer-arrangements for sending a transmit-signal or for receiving an receive-signal, where each mixer-arrangement comprises a mixer and an amplifier for amplifying the oscillator signal and generating the transmit-signal.
摘要翻译：公开了一种RF发送器/接收器前端，其包括用于接收振荡器信号的端子，用于将振荡器信号分配到不同信号路径的至少一个分配单元，用于发送发送信号或用于接收振荡器信号的两个或多个混频器装置接收信号，其中每个混频器装置包括混频器和用于放大振荡器信号并产生发射信号的放大器。

5. 发明授权

US07371650B2 Method for producing a transistor structure 有权
标题翻译：晶体管结构的制造方法
公开(公告)号：US07371650B2
公开(公告)日：2008-05-13
申请号：US10532894
申请日：2003-10-24
申请人： Josef Böck , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schäfer , Martin Seck
发明人： Josef Böck , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schäfer , Martin Seck
IPC分类号： H01L21/331
CPC分类号： H01L29/66272 , H01L21/8222 , H01L27/0825 , H01L29/0821
摘要： A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.
摘要翻译：提出了一种制造具有不同集电极宽度的第一和第二双极晶体管的晶体管结构的方法。该方法包括提供半导体衬底，将第一双极晶体管的第一掩埋层和第二双极晶体管的第二掩埋层引入到半导体衬底中，并且至少在第一掩埋层上产生具有第一集电极宽度的第一集电极区域层和在第二掩埋层上具有第二集电极宽度的第二集电极区。在第二掩埋层上产生具有第一厚度的第一收集器区，用于产生第二收集器宽度。在第一收集器区域上产生具有第二厚度的第二收集器区域。产生至少一个绝缘区域，其至少隔离收集器区域彼此。

6. 发明申请

US20060009002A1 Method for producing a transistor structure 有权
标题翻译：晶体管结构的制造方法
公开(公告)号：US20060009002A1
公开(公告)日：2006-01-12
申请号：US10532894
申请日：2003-10-24
申请人： Josef Bock , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schafer , Martin Seck
发明人： Josef Bock , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schafer , Martin Seck
IPC分类号： H01L21/331 , H01L21/8228
CPC分类号： H01L29/66272 , H01L21/8222 , H01L27/0825 , H01L29/0821
摘要： A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.
摘要翻译：提出了一种制造具有不同集电极宽度的第一和第二双极晶体管的晶体管结构的方法。该方法包括提供半导体衬底，将第一双极晶体管的第一掩埋层和第二双极晶体管的第二掩埋层引入到半导体衬底中，并且至少在第一掩埋层上产生具有第一集电极宽度的第一集电极区域层和在第二掩埋层上具有第二集电极宽度的第二集电极区。在第二掩埋层上产生具有第一厚度的第一收集器区，用于产生第二收集器宽度。在第一收集器区域上产生具有第二厚度的第二收集器区域。产生至少一个绝缘区域，其至少隔离收集器区域彼此。

7. 发明授权

US06893935B2 Semiconductor component and fabrication method 有权
标题翻译：半导体元件及制造方法
公开(公告)号：US06893935B2
公开(公告)日：2005-05-17
申请号：US10228241
申请日：2002-08-26
申请人： Rudolf Lachner
发明人： Rudolf Lachner
IPC分类号： H01L21/02 , H01L21/768 , H01L21/20
CPC分类号： H01L28/60 , H01L21/76838 , H01L21/76895
摘要： A thin lower electrode layer having an optimally protected capacitor dielectric is produced and structured. A conventional metallization layer for strip conductors is placed thereon as an upper electrode and structured. The capacitor dielectric can be deposited on a very even, preferably metallic surface (e.g. preferably TiN), sealed by a thin, preferably metallic layer (e.g. TiN) and protected so that is does not become thinned or damaged by other process steps.
摘要翻译：制造并构造具有最佳保护的电容器电介质的薄的下电极层。将常规的带状导电金属化层作为上电极放置在其上并构成。电容器电介质可以沉积在非常均匀的，优选金属表面（例如优选TiN）上，由薄的优选金属层（例如TiN）密封并被保护，使得其不会被其它工艺步骤变薄或损坏。

8. 发明授权

US09103902B2 Packaged antenna and method for producing same 有权
标题翻译：封装天线及其制造方法
公开(公告)号：US09103902B2
公开(公告)日：2015-08-11
申请号：US11746480
申请日：2007-05-09
申请人： Gerhard Lohninger , Johann P. Forstner , Rudolf Lachner
发明人： Gerhard Lohninger , Johann P. Forstner , Rudolf Lachner
IPC分类号： H01Q1/38 , H01Q1/40 , H01Q9/28 , G01S7/03 , H01Q23/00
CPC分类号： H01Q1/40 , G01S7/03 , H01L2224/48091 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10T29/49016 , H01L2924/00014
摘要： Electronic apparatus having an antenna chip with a substrate and an antenna structure, and a method of producing the same. The antenna chip is integrated or packaged in a package having a clip mounting surface for mounting the antenna chip, and an encapsulating material. The encapsulating material typically is a plastic mold used in the industrial packaging of integrated circuits. Between the antenna structure and the chip mounting surface, a first void is disposed in the substrate.
摘要翻译：具有带基板的天线芯片和天线结构的电子设备及其制造方法。天线芯片集成或封装在具有用于安装天线芯片的夹子安装表面的封装和封装材料中。封装材料通常是用于集成电路工业封装的塑料模具。在天线结构和芯片安装表面之间，在基板中设置第一空隙。

9. 发明授权

US07989919B2 Capacitor arrangement and method for making same 有权
标题翻译：电容器布置及其制作方法
公开(公告)号：US07989919B2
公开(公告)日：2011-08-02
申请号：US12477857
申请日：2009-06-03
申请人： Josef Boeck , Karl-Heinz Allers , Klaus Goller , Rudolf Lachner , Wolfgang Liebl
发明人： Josef Boeck , Karl-Heinz Allers , Klaus Goller , Rudolf Lachner , Wolfgang Liebl
IPC分类号： H01L20/02
CPC分类号： H01L23/5223 , H01L28/60 , H01L2924/0002 , Y10T29/417 , H01L2924/00
摘要： One or more embodiments relate to a semiconductor chip including a capacitor arrangement, the capacitor arrangement comprising: a first capacitor; and a second capacitor stacked above the first capacitor, the first capacitor and the second capacitor coupled in series between a first metallization level and a second metallization level adjacent the first metallization level.
摘要翻译：一个或多个实施例涉及包括电容器布置的半导体芯片，该电容器布置包括：第一电容器; 以及堆叠在所述第一电容器上方的第二电容器，所述第一电容器和所述第二电容器串联耦合在与所述第一金属化电平相邻的第一金属化电平和第二金属化电平之间。

10. 发明申请

US20080278400A1 PACKAGED ANTENNA AND METHOD FOR PRODUCING SAME 有权
标题翻译：包装天线及其生产方法
公开(公告)号：US20080278400A1
公开(公告)日：2008-11-13
申请号：US11746480
申请日：2007-05-09
申请人： Gerhard Lohninger , Johann P. Forstner , Rudolf Lachner
发明人： Gerhard Lohninger , Johann P. Forstner , Rudolf Lachner
IPC分类号： H01Q1/40 , G01S13/00 , H01P11/00
CPC分类号： H01Q1/40 , G01S7/03 , H01L2224/48091 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10T29/49016 , H01L2924/00014
摘要： Electronic apparatus having an antenna chip with a substrate and an antenna structure, and a method of producing the same. The antenna chip is integrated or packaged in a package having a clip mounting surface for mounting the antenna chip, and an encapsulating material. The encapsulating material typically is a plastic mold used in the industrial packaging of integrated circuits. Between the antenna structure and the chip mounting surface, a first void is disposed in the substrate.
摘要翻译：具有带基板的天线芯片和天线结构的电子设备及其制造方法。天线芯片集成或封装在具有用于安装天线芯片的夹子安装表面的封装和封装材料中。封装材料通常是用于集成电路工业封装的塑料模具。在天线结构和芯片安装表面之间，在衬底中设置第一空隙。

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