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    • 1. 发明申请
    • Methods and Apparatus For Measuring Wavefronts and For Determining Scattered Light, and Related Devices and Manufacturing Methods
    • 用于测量波前和用于确定散射光的方法和装置及相关装置及制造方法
    • US20080231840A1
    • 2008-09-25
    • US11908911
    • 2006-03-17
    • Wolfgang EmerHelmut HaidnerUlrich Wegmann
    • Wolfgang EmerHelmut HaidnerUlrich Wegmann
    • G01N21/00G02B5/18G02B27/00
    • G03F7/706G01J9/0215G03F7/70941
    • Methods and apparatus for measuring wavefronts and for determining scattered light, and related devices and manufacturing methods. 2.1. The invention relates to a method and apparatus for spatially resolved wavefront measurement on a test specimen, a method and apparatus for spatially resolved scattered light determination, a diffraction structure support and a coherent structure support therefor, and also to an objective or other radiation exposure device manufactured using such a method, and an associated manufacturing method. 2.2. An embodiment of the invention involves carrying out, for the wavefront measurement, a first shearing measuring operation, which comprises a plurality of individual measurements with at least two first shearing directions and spatially resolved detection of shearing interferograms generated, and an analogous second shearing measuring operation with at least one second shearing direction, at least one second shearing direction being non-parallel to at least one first shearing direction. From the shearing interferograms detected, it is possible e.g. to determine a wavefront spatial frequency spectrum and/or a point response of the test specimen and to carry out a spatially resolved scattered light determination by means of the point spread function. 2.3. Use e.g. for the spatially resolved scattered light determination of projection objectives for microlithography.
    • 用于测量波前和用于确定散射光的方法和装置,以及相关装置和制造方法。 2.1。 本发明涉及一种用于测试样本上的空间分辨波前测量的方法和装置,用于空间分辨散射光测定的方法和装置,衍射结构支撑及其相干结构支撑,以及目标或其它辐射曝光装置 使用这种方法制造,以及相关的制造方法。 2.2。 本发明的一个实施例涉及对于波前测量执行第一剪切测量操作,该测量操作包括具有至少两个第一剪切方向的多个单独测量并且产生的剪切干涉图的空间分辨检测以及类似的第二剪切测量操作 具有至少一个第二剪切方向,至少一个第二剪切方向不平行于至少一个第一剪切方向。 从所检测的剪切干涉图可以看出, 确定测试样本的波前空间频谱和/或点响应,并通过点扩散函数进行空间分辨的散射光测定。 2.3。 使用例如 用于空间分辨的用于微光刻的投影物镜的散射光测定。
    • 2. 发明申请
    • Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry
    • 通过相移干涉法对光学成像系统进行波前测量的装置和方法
    • US20050007602A1
    • 2005-01-13
    • US10816896
    • 2004-04-05
    • Helmut HaidnerWolfgang EmerRainer HochUlrich WegmannMartin SchrieverMarkus Goeppert
    • Helmut HaidnerWolfgang EmerRainer HochUlrich WegmannMartin SchrieverMarkus Goeppert
    • G01B9/02G01J9/04
    • G03F7/706G01J9/04G01M11/0264G01M11/0271
    • Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry, having a mask structure (6a) to be arranged on the object side, and/or a grating structure (7a) to be arranged on the image side. The object-side mask structure includes one or more one-dimensional mask structure patterns, and the image-side grating structure includes one or more two-dimensional grating structure patterns. Alternatively, conversely, the mask structure includes one or more two-dimensional patterns, and the grating structure includes one or more one-dimensional patterns. Additionally or alternatively, a pupil position offset caused by a lateral relative movement of the mask structure and detector element can be taken into account by back calculating the interferogram, respectively recorded by the detector element, using an associated phase-shift characteristic, or by a computational correction of wavefront derivatives, obtained from the recorded interferograms, in the direction of lateral movement. The method and/or the device can by used, for example, for determining aberration in the case of high-resolution projection objectives of microlithography exposure machines using shearing or point interferometry.
    • 用于通过相移干涉测量法对光学成像系统进行波前测量的装置和方法,具有要布置在物体侧的掩模结构(6a)和/或要布置在像侧的光栅结构(7a) 。 物体侧掩模结构包括一个或多个一维掩模结构图案,并且图像侧光栅结构包括一个或多个二维光栅结构图案。 或者,相反地,掩模结构包括一个或多个二维图案,并且光栅结构包括一个或多个一维图案。 附加地或替代地,由掩模结构和检测器元件的横向相对移动引起的瞳孔位置偏移可以通过使用相关联的相移特性反向计算分别由检测器元件记录的干涉图来考虑, 从记录的干涉图中获得的横向运动方向的波前衍生的计算校正。 该方法和/或装置可以通过例如用于在使用剪切或点干涉测量的微光刻曝光机的高分辨率投影物镜的情况下确定像差。
    • 3. 发明授权
    • Methods and apparatus for measuring wavefronts and for determining scattered light, and related devices and manufacturing methods
    • 用于测量波前和用于确定散射光的方法和装置,以及相关装置和制造方法
    • US08134716B2
    • 2012-03-13
    • US11908911
    • 2006-03-17
    • Wolfgang EmerHelmut HaidnerUlrich Wegmann
    • Wolfgang EmerHelmut HaidnerUlrich Wegmann
    • G01B9/02
    • G03F7/706G01J9/0215G03F7/70941
    • A method and apparatus for spatially resolved wavefront measurement on a test specimen, a method and apparatus for spatially resolved scattered light determination, a diffraction structure support and a coherent structure support therefor, and also an objective or other radiation exposure device manufactured using such a method, and an associated manufacturing method. An embodiment involves carrying out, for the wavefront measurement, a first shearing measuring operation, which includes a plurality of individual measurements with at least two first shearing directions and spatially resolved detection of shearing interferograms generated, and an analogous second shearing measuring operation with at least one second shearing direction, the at least one second shearing direction being non-parallel to at least one first shearing direction. From the shearing interferograms detected, it is possible e.g. to determine a wavefront spatial frequency spectrum and/or a point response of the test specimen and to carry out a spatially resolved scattered light determination with a point spread function. The embodiment may be used, e.g., for spatially resolved scattered light determination of projection objectives for microlithography.
    • 用于空间分辨波长测量的测试样本的方法和装置,用于空间分辨散射光测定的方法和装置,衍射结构支撑和相干结构支撑,以及使用这种方法制造的物镜或其它辐射曝光装置 ,以及相关的制造方法。 一个实施例涉及对于波前测量执行第一剪切测量操作,该测量操作包括具有至少两个第一剪切方向的多个单独测量和产生的剪切干涉图的空间分辨检测,以及至少具有类似的第二剪切测量操作 一个第二剪切方向,所述至少一个第二剪切方向不平行于至少一个第一剪切方向。 从所检测的剪切干涉图可以看出, 以确定测试样本的波前空间频谱和/或点响应,并执行具有点扩散函数的空间分辨散射光确定。 该实施例可以用于例如用于微光刻的投影物镜的空间分辨散射光确定。
    • 4. 发明授权
    • Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry
    • 通过相移干涉法对光学成像系统进行波前测量的装置和方法
    • US07417745B2
    • 2008-08-26
    • US10816896
    • 2004-04-05
    • Helmut HaidnerWolfgang EmerRainer HochUlrich WegmannMartin SchrieverMarkus Goeppert
    • Helmut HaidnerWolfgang EmerRainer HochUlrich WegmannMartin SchrieverMarkus Goeppert
    • G01B9/02
    • G03F7/706G01J9/04G01M11/0264G01M11/0271
    • Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry, having a mask structure (6a) to be arranged on the object side, and/or a grating structure (7a) to be arranged on the image side. The object-side mask structure includes one or more one-dimensional mask structure patterns, and the image-side grating structure includes one or more two-dimensional grating structure patterns. Alternatively, conversely, the mask structure includes one or more two-dimensional patterns, and the grating structure includes one or more one-dimensional patterns. Additionally or alternatively, a pupil position offset caused by a lateral relative movement of the mask structure and detector element can be taken into account by back calculating the interferogram, respectively recorded by the detector element, using an associated phase-shift characteristic, or by a computational correction of wavefront derivatives, obtained from the recorded interferograms, in the direction of lateral movement. The method and/or the device can by used, for example, for determining aberration in the case of high-resolution projection objectives of microlithography exposure machines using shearing or point interferometry.
    • 用于通过相移干涉测量法对具有要布置在物体侧的掩模结构(6a)的光学成像系统的波前测量的装置和方法和/或布置在物体侧上的光栅结构(7a) 形象一面 物体侧掩模结构包括一个或多个一维掩模结构图案,并且图像侧光栅结构包括一个或多个二维光栅结构图案。 或者,相反地,掩模结构包括一个或多个二维图案,并且光栅结构包括一个或多个一维图案。 附加地或替代地,由掩模结构和检测器元件的横向相对移动引起的瞳孔位置偏移可以通过使用相关联的相移特性反向计算分别由检测器元件记录的干涉图来考虑, 从记录的干涉图中获得的横向运动方向的波前衍生的计算校正。 该方法和/或装置可以通过例如用于在使用剪切或点干涉测量的微光刻曝光机的高分辨率投影物镜的情况下确定像差。
    • 5. 发明申请
    • Device and Method for the Interferometric Measurement of Phase Masks
    • 相位掩模的干涉测量装置和方法
    • US20080231862A1
    • 2008-09-25
    • US12065275
    • 2006-08-31
    • Helmut HaidnerUlrich Wegmann
    • Helmut HaidnerUlrich Wegmann
    • G01B9/02
    • G01J9/02G01J9/0215G03F1/26G03F1/84G03F7/70283G03F7/70591
    • A device and method for the interferometric measurement of phase masks, particularly from lithography. Radiation passing through a coherence mask is brought to interference by a diffraction grating. A phase mask is arranged in or near the pupil plane of the first imaging optics which can be positioned exactly in the x-y direction by which interferograms are generated which are phase-shifted in the x-y direction by translational displacement of the coherence mask or of the diffraction grating. The interferograms are imaged onto the spatially resolving detector by second imaging optic and the phase and transmission functions of the phase mask are determined by an evaluation unit. The invention can, of course, generally be applied to planar phase objects, such as biological structures, for example, points of establishment with respect to an interference microscope.
    • 用于干涉测量相位掩模的装置和方法,特别是从光刻技术。 通过相干掩模的辐射被衍射光栅引起干涉。 相位掩模布置在第一成像光学器件的光瞳平面内或附近,其可以精确地定位在xy方向上,通过该方向产生干涉图,其通过相干掩模或衍射的平移位移在xy方向上相移 光栅。 干涉图通过第二成像光学元件成像到空间分辨检测器上,相位掩模的相位和透射函数由评估单元确定。 当然,本发明通常可以应用于平面相位物体,例如生物结构,例如相对于干涉显微镜的建立点。
    • 7. 发明授权
    • Method of manufacturing a miniaturized device
    • 制造小型化装置的方法
    • US07623218B2
    • 2009-11-24
    • US11282154
    • 2005-11-18
    • Ulrich WegmannHelmut Haidner
    • Ulrich WegmannHelmut Haidner
    • G03B27/52G03B27/42
    • G03F7/70258G03F7/70341
    • A method of manufacturing a miniaturized device comprises disposing a patterning structure to be imaged in a region of an object plane of an imaging optics of the projection exposure system; disposing a substrate carrying a resist in a region of an image plane of the imaging optics and exposing portions of the substrate with images of the patterning structure using the projection exposure system; maintaining a flow of an immersion liquid to and from a space between the substrate and a front lens of the imaging optics closest to the substrate; measuring a physical property which is indicative of at least one of a refractive index of the immersion liquid and a change of the refractive index of the immersion liquid over time, wherein the physical property is measured using a beam of measuring light interacting with the immersion liquid; adjusting at least one optical property of the projection exposure system based on the measured physical property; exposing further portions of the substrate with images of the patterning structure using the projection exposure system with the at least one adjusted optical property of the projection exposure system; and developing the exposed resist and processing the substrate with the developed resist.
    • 一种制造小型化装置的方法包括:在投影曝光系统的成像光学元件的物平面的区域中设置待成像的图案形成结构; 在所述成像光学元件的像平面的区域中设置承载抗蚀剂的基板,并且使用所述投影曝光系统对所述图案形成结构的图像曝光所述基板的部分; 保持浸没液体流入和离开基板与最靠近基板的成像光学元件的前透镜之间的空间; 测量指示浸渍液体的折射率和浸渍液体的折射率随时间变化中的至少一个的物理性质,其中使用与浸没液体相互作用的测量光束测量物理性质 ; 基于所测量的物理性质来调整投影曝光系统的至少一个光学特性; 使用具有所述投影曝光系统的所述至少一个经调整的光学特性的所述投影曝光系统,用所述图案形成结构的图像曝光所述基板的其它部分; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。
    • 9. 发明申请
    • Method of manufacturing a miniaturized device
    • US20060139583A1
    • 2006-06-29
    • US11282154
    • 2005-11-18
    • Ulrich WegmannHelmut Haidner
    • Ulrich WegmannHelmut Haidner
    • G03B27/52
    • G03F7/70258G03F7/70341
    • A method of manufacturing a miniaturized device comprises disposing a patterning structure to be imaged in a region of an object plane of an imaging optics of the projection exposure system; disposing a substrate carrying a resist in a region of an image plane of the imaging optics and exposing portions of the substrate with images of the patterning structure using the projection exposure system; maintaining a flow of an immersion liquid to and from a space between the substrate and a front lens of the imaging optics closest to the substrate; measuring a physical property which is indicative of at least one of a refractive index of the immersion liquid and a change of the refractive index of the immersion liquid over time, wherein the physical property is measured using a beam of measuring light interacting with the immersion liquid; adjusting at least one optical property of the projection exposure system based on the measured physical property; exposing further portions of the substrate with images of the patterning structure using the projection exposure system with the at least one adjusted optical property of the projection exposure system; and developing the exposed resist and processing the substrate with the developed resist.