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1. 发明授权

US08075732B2 EUV collector debris management 失效
标题翻译： EUV收集器碎片管理
公开(公告)号：US08075732B2
公开(公告)日：2011-12-13
申请号：US10979945
申请日：2004-11-01
申请人： William N. Partlo , Richard L. Sandstrom , Igor V. Fomenkov , Alexander I. Ershov , William Oldham , William F. Marx , Oscar Hemberg
发明人： William N. Partlo , Richard L. Sandstrom , Igor V. Fomenkov , Alexander I. Ershov , William Oldham , William F. Marx , Oscar Hemberg
IPC分类号： C23F1/00
CPC分类号： B08B7/00
摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
摘要翻译：可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。蚀刻剂源材料可以包含卤素或卤素化合物。蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。还可以存在离子加速剂将离子朝向反射表面加速。离子可以包括蚀刻剂源材料。该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

2. 发明授权

US07405416B2 Method and apparatus for EUV plasma source target delivery 有权
标题翻译：用于EUV等离子体源目标传递的方法和装置
公开(公告)号：US07405416B2
公开(公告)日：2008-07-29
申请号：US11067124
申请日：2005-02-25
申请人： J. Martin Algots , Igor V. Fomenkov , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Oscar Hemberg , Alexander N. Bykanov , Dennis W. Cobb
发明人： J. Martin Algots , Igor V. Fomenkov , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Oscar Hemberg , Alexander N. Bykanov , Dennis W. Cobb
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , H05G2/005 , H05G2/006
摘要： An EUV plasma formation target delivery system and method is disclosed which may comprise: a target droplet formation mechanism comprising a magneto-restrictive or electro-restrictive material, a liquid plasma source material passageway terminating in an output orifice; a charging mechanism applying charge to a droplet forming jet stream or to individual droplets exiting the passageway along a selected path; a droplet deflector intermediate the output orifice and a plasma initiation site periodically deflecting droplets from the selected path, a liquid target material delivery mechanism comprising a liquid target material delivery passage having an input opening and an output orifice; an electromotive disturbing force generating mechanism generating a disturbing force within the liquid target material, a liquid target delivery droplet formation mechanism having an output orifice; and/or a wetting barrier around the periphery of the output orifice.
摘要翻译：公开了一种EUV等离子体形成靶递送系统和方法，其可以包括：目标液滴形成机构，其包括磁阻或电子限制材料，终止于输出孔的液体等离子体源材料通道; 将电荷施加到液滴形成喷射流或沿着选定路径离开通道的各个液滴的充电机构; 在输出孔之间的液滴偏转器和等离子体引发位置周期性地偏转来自所选择的路径的液滴;液体靶材料输送机构，包括具有输入开口和输出孔的液体靶材料输送通道; 产生在液体目标材料内的干扰力的电动干扰力产生机构，具有输出孔的液体目标传送液滴形成机构; 和/或围绕输出孔周边的润湿屏障。

3. 发明授权

US07838854B2 Method and apparatus for EUV plasma source target delivery 有权
标题翻译：用于EUV等离子体源目标传递的方法和装置
公开(公告)号：US07838854B2
公开(公告)日：2010-11-23
申请号：US12220560
申请日：2008-07-25
申请人： J. Martin Algots , Igor V. Fomenkov , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Oscar Hemberg , Alexander N. Bykanov , Dennis W. Cobb
发明人： J. Martin Algots , Igor V. Fomenkov , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Oscar Hemberg , Alexander N. Bykanov , Dennis W. Cobb
IPC分类号： H01J35/20
CPC分类号： H05G2/003 , H05G2/005 , H05G2/006
摘要： An EUV plasma formation target delivery system and method is disclosed which may comprise: a target droplet formation mechanism comprising a magneto-restrictive or electro-restrictive material, a liquid plasma source material passageway terminating in an output orifice; a charging mechanism applying charge to a droplet forming jet stream or to individual droplets exiting the passageway along a selected path; a droplet deflector intermediate the output orifice and a plasma initiation site periodically deflecting droplets from the selected path, a liquid target material delivery mechanism comprising a liquid target material delivery passage having an input opening and an output orifice; an electromotive disturbing force generating mechanism generating a disturbing force within the liquid target material, a liquid target delivery droplet formation mechanism having an output orifice; and/or a wetting barrier around the periphery of the output orifice.
摘要翻译：公开了一种EUV等离子体形成靶递送系统和方法，其可以包括：目标液滴形成机构，其包括磁阻或电子限制材料，终止于输出孔的液体等离子体源材料通道; 将电荷施加到液滴形成喷射流或沿着选定路径离开通道的各个液滴的充电机构; 在输出孔之间的液滴偏转器和等离子体引发位置周期性地偏转来自所选择的路径的液滴;液体靶材料输送机构，包括具有输入开口和输出孔的液体靶材料输送通道; 产生在液体目标材料内的干扰力的电动干扰力产生机构，具有输出孔的液体目标传送液滴形成机构; 和/或围绕输出孔周边的润湿屏障。

4. 发明申请

US20080283776A1 Method and apparatus for EUV plasma source target delivery 有权
公开(公告)号：US20080283776A1
公开(公告)日：2008-11-20
申请号：US12220560
申请日：2008-07-25
申请人： J. Martin Algots , Igor V. Fomenkov , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Oscar Hemberg , Alexander N. Bykanov , Dennis W. Cobb
发明人： J. Martin Algots , Igor V. Fomenkov , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Oscar Hemberg , Alexander N. Bykanov , Dennis W. Cobb
IPC分类号： G21K5/00
CPC分类号： H05G2/003 , H05G2/005 , H05G2/006
摘要： An EUV plasma formation target delivery system and method is disclosed which may comprise: a target droplet formation mechanism comprising a magneto-restrictive or electro-restrictive material, a liquid plasma source material passageway terminating in an output orifice; a charging mechanism applying charge to a droplet forming jet stream or to individual droplets exiting the passageway along a selected path; a droplet deflector intermediate the output orifice and a plasma initiation site periodically deflecting droplets from the selected path, a liquid target material delivery mechanism comprising a liquid target material delivery passage having an input opening and an output orifice; an electromotive disturbing force generating mechanism generating a disturbing force within the liquid target material, a liquid target delivery droplet formation mechanism having an output orifice; and/or a wetting barrier around the periphery of the output orifice.

5. 发明申请

US20060091109A1 EUV collector debris management 失效
标题翻译： EUV收集器碎片管理
公开(公告)号：US20060091109A1
公开(公告)日：2006-05-04
申请号：US10979945
申请日：2004-11-01
申请人： William Partlo , Richard Sandstrom , Igor Fomenkov , Alexander Ershov , William Oldham , William Marx , Oscar Hemberg
发明人： William Partlo , Richard Sandstrom , Igor Fomenkov , Alexander Ershov , William Oldham , William Marx , Oscar Hemberg
IPC分类号： H01L21/306 , B08B6/00 , B44C1/22
CPC分类号： B08B7/00
摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
摘要翻译：可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。蚀刻剂源材料可以包含卤素或卤素化合物。蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。还可以存在离子加速剂将离子朝向反射表面加速。离子可以包括蚀刻剂源材料。该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

6. 发明申请

US20080179549A1 LPP EUV plasma source material target delivery system 失效
标题翻译： LPP EUV等离子体源材料目标传送系统
公开(公告)号：US20080179549A1
公开(公告)日：2008-07-31
申请号：US12075631
申请日：2008-03-12
申请人： Alexander N. Bykanov , J. Martin Algots , Oleh Khodykin , Oscar Hemberg
发明人： Alexander N. Bykanov , J. Martin Algots , Oleh Khodykin , Oscar Hemberg
IPC分类号： G01J3/02
CPC分类号： H05G2/001
摘要： An EUV light generation system and method is disclosed that may comprise a droplet generator producing plasma source material target droplets traveling toward the vicinity of a plasma source material target irradiation site; a drive laser; a drive laser focusing optical element having a first range of operating center wavelengths; a droplet detection radiation source having a second range of operating center wavelengths; a drive laser steering element comprising a material that is highly reflective within at least some part of the first range of wavelengths and highly transmissive within at least some part of the second range of center wavelengths; a droplet detection radiation aiming mechanism directing the droplet detection radiation through the drive laser steering element and the lens to focus at a selected droplet detection position intermediate the droplet generator and the irradiation site.
摘要翻译：公开了一种EUV发光系统和方法，其可以包括产生等离子体源材料的液滴发生器，目标液滴朝向等离子体源材料目标照射位置附近行进; 驱动激光器具有第一操作中心波长范围的驱动激光聚焦光学元件; 具有第二操作中心波长范围的液滴检测辐射源; 驱动激光操纵元件，其包括在第一波长范围的至少一部分内具有高度反射性的材料，并且在第二中心波长范围的至少一部分内具有高度透射性; 液滴检测辐射瞄准机构，其引导液滴检测辐射通过驱动激光转向元件和透镜，以聚焦在液滴发生器和照射部位之间的选定液滴检测位置。

7. 发明申请

US20080093775A1 NANOMETER-SCALE ABLATION USING FOCUSED, COHERENT EXTREME ULTRAVIOLET/SOFT X-RAY LIGHT 审中-公开
标题翻译：使用聚焦，相干极端超紫外线/软X射线光的NANOMETER-SCALE ABLATION
公开(公告)号：US20080093775A1
公开(公告)日：2008-04-24
申请号：US11840898
申请日：2007-08-17
申请人： Carmen Menoni , Jorge Rocca , Georgiy Vaschenko , Scott Bloom , Erik Anderson , Weilun Chao , Oscar Hemberg
发明人： Carmen Menoni , Jorge Rocca , Georgiy Vaschenko , Scott Bloom , Erik Anderson , Weilun Chao , Oscar Hemberg
IPC分类号： B29C67/20 , B29B13/08
CPC分类号： B23K26/12 , B23K26/032 , B23K26/0624 , B23K26/066 , B23K26/0665 , B23K26/1224 , B23K26/123 , B23K26/127 , B23K26/389 , B23K26/40 , B23K2103/50
摘要： Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.
摘要翻译：通过聚焦来自Ne-like Ar，46.9nm波长的脉冲，使用独立的菲涅耳带的毛细管放电激光器，在硅衬底上的聚（甲基丙烯酸甲酯）中获得直径小至82nm并具有干净的壁的孔的消融描述了衍射成三阶的板。还进行了来自消融的光的光谱分析。这些结果表明使用聚焦的相干EUV / SXR光用于材料的直接纳米级图案化。

8. 发明申请

US20070146703A1 Systems and Methods for Detection and Classification of Waterborne Particles Using a Multiple Angle Light Scattering (MALS) Instrument 失效
标题翻译：使用多角度散射（MALS）仪器检测和分类水性颗粒的系统和方法
公开(公告)号：US20070146703A1
公开(公告)日：2007-06-28
申请号：US11539166
申请日：2006-10-05
申请人： John Adams , Kristina Crousore , Cherish Teters , Oscar Hemberg
发明人： John Adams , Kristina Crousore , Cherish Teters , Oscar Hemberg
IPC分类号： G01N21/00
CPC分类号： G01N15/147 , G01N15/1429 , G01N15/1459 , G01N15/1475 , G01N21/53 , G01N2015/0088 , G01N2015/1477 , G01N2015/1486 , G01N2015/1488 , G01N2015/1497
摘要： A particle detection system to identify and classify particles is programmed to capture digitized images of the particle generated by directing a light source through a fluid that includes the particle. The particle scatters the light and the scattered light is detected using a detector. The detector creates a digital signal corresponding to the particle, which is used by the system to generate biological optical signal. This biological optical signal can then be used to classify the event, or particle.
摘要翻译：用于识别和分类粒子的粒子检测系统被编程以捕获通过将光源引导通过包括粒子的流体而产生的粒子的数字化图像。颗粒散射光，并使用检测器检测散射光。检测器产生对应于粒子的数字信号，该数字信号被系统用于生成生物光信号。然后可以将该生物学光信号用于对事件或粒子进行分类。

9. 发明申请

US20060192154A1 Method and apparatus for EUV plasma source target delivery 有权
标题翻译：用于EUV等离子体源目标传递的方法和装置
公开(公告)号：US20060192154A1
公开(公告)日：2006-08-31
申请号：US11067124
申请日：2005-02-25
申请人： J. Algots , Igor Fomenkov , Alexander Ershov , William Partlo , Richard Sandstrom , Oscar Hemberg , Alexander Bykanov , Dennis Cobb
发明人： J. Algots , Igor Fomenkov , Alexander Ershov , William Partlo , Richard Sandstrom , Oscar Hemberg , Alexander Bykanov , Dennis Cobb
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , H05G2/005 , H05G2/006
摘要： An EUV plasma formation target delivery system and method is disclosed which may comprise: a target droplet formation mechanism comprising a magneto-restrictive or electro-restrictive material, a liquid plasma source material passageway terminating in an output orifice; a charging mechanism applying charge to a droplet forming jet stream or to individual droplets exiting the passageway along a selected path; a droplet deflector intermediate the output orifice and a plasma initiation site periodically deflecting droplets from the selected path, a liquid target material delivery mechanism comprising a liquid target material delivery passage having an input opening and an output orifice; an electromotive disturbing force generating mechanism generating a disturbing force within the liquid target material, a liquid target delivery droplet formation mechanism having an output orifice; and/or a wetting barrier around the periphery of the output orifice.
摘要翻译：公开了一种EUV等离子体形成靶递送系统和方法，其可以包括：目标液滴形成机构，其包括磁阻或电子限制材料，终止于输出孔的液体等离子体源材料通道; 将电荷施加到液滴形成喷射流或沿着选定路径离开通道的各个液滴的充电机构; 在输出孔之间的液滴偏转器和等离子体引发位置周期性地偏转来自所选择的路径的液滴;液体靶材料输送机构，包括具有输入开口和输出孔的液体靶材料输送通道; 产生在液体目标材料内的干扰力的电动干扰力产生机构，具有输出孔的液体目标传送液滴形成机构; 和/或围绕输出孔周边的润湿屏障。

10. 发明授权

US07931850B2 Nanometer-scale ablation using focused, coherent extreme ultraviolet/soft x-ray light 有权
标题翻译：使用聚焦，相干极紫外/软X射线光的纳米级消融
公开(公告)号：US07931850B2
公开(公告)日：2011-04-26
申请号：US12861627
申请日：2010-08-23
申请人： Carmen S. Menoni , Jorge J. Rocca , Georgiy Vaschenko , Scott Bloom , Erik H. Anderson , Weilun Chao , Oscar Hemberg
发明人： Carmen S. Menoni , Jorge J. Rocca , Georgiy Vaschenko , Scott Bloom , Erik H. Anderson , Weilun Chao , Oscar Hemberg
IPC分类号： B29C67/00
CPC分类号： B23K26/12 , B23K26/032 , B23K26/0624 , B23K26/066 , B23K26/0665 , B23K26/1224 , B23K26/123 , B23K26/127 , B23K26/389 , B23K26/40 , B23K2103/50
摘要： Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.
摘要翻译：通过聚焦来自Ne-like Ar，46.9nm波长的脉冲，使用独立的菲涅耳带的毛细管放电激光器，在硅衬底上的聚（甲基丙烯酸甲酯）中获得直径小至82nm并具有干净的壁的孔的消融描述了衍射成三阶的板。还进行了来自消融的光的光谱分析。这些结果表明使用聚焦的相干EUV / SXR光用于材料的直接纳米级图案化。

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