专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6159829A Memory device using movement of protons 失效
标题翻译：存储器件使用质子运动
公开(公告)号：US6159829A
公开(公告)日：2000-12-12
申请号：US64488
申请日：1998-04-22
申请人： William L. Warren , Karel J. R. Vanheusden , Daniel M. Fleetwood , Roderick A. B. Devine , Leo B. Archer , George A. Brown , Robert M. Wallace
发明人： William L. Warren , Karel J. R. Vanheusden , Daniel M. Fleetwood , Roderick A. B. Devine , Leo B. Archer , George A. Brown , Robert M. Wallace
IPC分类号： G11C13/04 , G11C16/04 , H01L21/28 , H01L29/792 , H01L21/425
CPC分类号： H01L21/263 , G11C13/04 , G11C16/0466 , H01L21/28176 , H01L21/28273 , H01L29/792
摘要： An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.
摘要翻译：利用电介质层内的质子运动的电子写入的存储元件的增强，该电介质层被任一侧上的层围绕，以将质子限制在电介质层内，电极装置连接到周围层，以改变电介质内的质子的空间位置层。该装置优选构造为硅 - 二氧化硅 - 硅层状结构，其中质子在包含氢气的气氛中退火时被引入该结构。通过以突然的冷却结束该退火步骤来增强器件操作。该器件以低功率工作，优选是非易失性的，具有耐辐射性，并且与常规的硅MOS处理兼容，用于与同一硅衬底上的其它微电子元件集成。

2. 发明授权

US5830575A Memory device using movement of protons 失效
公开(公告)号：US5830575A
公开(公告)日：1998-11-03
申请号：US714547
申请日：1996-09-16
申请人： William L. Warren , Karel J. R. Vanheusden , Daniel M. Fleetwood , Roderick A. B. Devine
发明人： William L. Warren , Karel J. R. Vanheusden , Daniel M. Fleetwood , Roderick A. B. Devine
IPC分类号： H01L21/8247 , G11C7/00 , G11C13/04 , G11C16/04 , H01L21/00 , H01L21/28 , H01L27/10 , H01L27/12 , H01L29/788 , H01L29/792 , B32B5/16
CPC分类号： G11C7/005 , G11C13/04 , G11C16/0466 , H01L21/28273 , H01L27/1203 , H01L29/792 , Y10T428/2993 , Y10T428/31504 , Y10T428/31598
摘要： An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

3. 发明授权

US6140157A Memory device using movement of protons 有权
标题翻译：存储器件使用质子运动
公开(公告)号：US6140157A
公开(公告)日：2000-10-31
申请号：US129588
申请日：1998-08-05
申请人： William L. Warren , Karel J. R. Vanheusden , Daniel M. Fleetwood , Roderick A. B. Devine
发明人： William L. Warren , Karel J. R. Vanheusden , Daniel M. Fleetwood , Roderick A. B. Devine
IPC分类号： G11C11/22 , G11C13/04 , H01L21/30 , H01L29/792 , H01L21/00
CPC分类号： H01L21/263 , G11C11/22 , G11C13/04 , G11C13/048 , H01L21/3003 , H01L29/792
摘要： An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.
摘要翻译：一种电子写入的存储元件，其利用在由两侧上的层围绕的电介质层内的质子的运动，以将质子限制在电介质层内，电极装置连接到周围层，以改变电介质层内质子的空间位置。该装置优选构造为硅 - 二氧化硅 - 硅层状结构，其中在包含氢气的气氛中的高温退火期间，质子通过二氧化硅层的暴露边缘横向引入该结构。该器件以低功率工作，优选是非易失性的，具有耐辐射性，并且与常规硅MOS处理兼容，用于与同一硅衬底上的其它微电子元件集成。通过添加光学活性层，存储元件变成电学写入的光学读取光学存储元件。

4. 发明授权

US5786231A Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer 失效
标题翻译：在氧化物层中选择具有低于预定水平的缺陷的半导体衬底的筛选方法
公开(公告)号：US5786231A
公开(公告)日：1998-07-28
申请号：US567679
申请日：1995-12-05
申请人： William L. Warren , Karel J. R. Vanheusden , James R. Schwank , Daniel M. Fleetwood , Marty R. Shaneyfelt , Peter S. Winokur , Roderick A. B. Devine
发明人： William L. Warren , Karel J. R. Vanheusden , James R. Schwank , Daniel M. Fleetwood , Marty R. Shaneyfelt , Peter S. Winokur , Roderick A. B. Devine
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： H01L22/14 , H01L22/20
摘要： A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer.
摘要翻译：一种用于集成电路制造的半导体衬底的筛选或限定方法。该方法包括以下步骤：在缺陷活化环境（例如氢气，形成气体或氨）中的第一温度下退火至少一个半导体衬底足够的时间以激活衬底的氧化物层内的任何缺陷; 测量所述氧化物层的至少一部分的缺陷显露电特性，以确定其中的活化缺陷的量; 以及选择活性缺陷量低于预定水平的衬底。缺陷显露的电气特性可以是取决于由激活的缺陷产生的氧化物层中的电荷的电容 - 电压（C-V）特性或电流 - 电压（I-V）特性。本发明的实施例可以应用于筛选其上形成有氧化层的任何类型的半导体衬底或晶片。这包括通过通过注入氧（SIMOX）工艺分离的绝缘体上硅衬底或绝缘体上的绝缘体（BESOI）工艺的接合和回蚀，以及具有热氧化物层或沉积氧化层。

5. 发明授权

US06304666B1 Apparatus for sensing patterns of electrical field variations across a surface 有权
标题翻译：用于感测跨越表面的电场变化图案的装置
公开(公告)号：US06304666B1
公开(公告)日：2001-10-16
申请号：US09167772
申请日：1998-10-07
申请人： William L. Warren , Roderick A. B. Devine
发明人： William L. Warren , Roderick A. B. Devine
IPC分类号： G06K928
CPC分类号： G06F3/041 , G01R29/24 , G06K9/0002 , G11C16/0466
摘要： An array of nonvolatile field effect transistors used to sense electric potential variations. The transistors owe their nonvolatility to the movement of protons within the oxide layer that occurs only in response to an externally applied electric potential between the gate on one side of the oxide and the source/drain on the other side. The position of the protons within the oxide layer either creates or destroys a conducting channel in the adjacent source/channel/drain layer below it, the current in the channel being measured as the state of the nonvolatile memory. The protons can also be moved by potentials created by other instrumentalities, such as charges on fingerprints or styluses above the gates, pressure on a piezoelectric layer above the gates, light shining upon a photoconductive layer above the gates. The invention allows sensing of fingerprints, handwriting, and optical images, which are converted into digitized images thereof in a nonvolatile format.
摘要翻译：用于检测电位变化的非易失性场效应晶体管阵列。晶体管对于氧化物层内的质子的运动具有非易失性，仅在氧化物一侧的栅极与另一侧的源极/漏极之间产生外部施加的电位而发生。质子在氧化物层内的位置在其下面的相邻源极/沟道/漏极层中产生或破坏导电沟道，通道中的电流被测量为非易失性存储器的状态。质子也可以由其他工具产生的电位移动，例如栅极上方的指纹或触针上的电荷，栅极上方的压电层上的压力，照射在栅极上方的光电导层上的光。本发明允许感测以非易失性格式转换成数字化图像的指纹，手写和光学图像。

6. 发明授权

US07459403B1 Method for reducing device and circuit sensitivity to electrical stress and radiation induced aging 失效
标题翻译：降低器件和电路对电应力和辐射诱导老化敏感性的方法
公开(公告)号：US07459403B1
公开(公告)日：2008-12-02
申请号：US11380974
申请日：2006-05-01
申请人： Roderick A. B. Devine , Harold L. Hughes , Akos G. Revesz
发明人： Roderick A. B. Devine , Harold L. Hughes , Akos G. Revesz
IPC分类号： H01L21/469
CPC分类号： H01L21/76825 , H01L21/26506 , H01L21/28176 , H01L21/3003 , H01L21/3115 , H01L21/31155 , H01L21/76826 , H01L21/76829
摘要： In microelectronic circuits involving dielectric/semiconductor interfaces having interstitial sites in the dielectric, a method for hardening these interfaces by introducing a small atomic diameter inert gas into the interstitial sites.
摘要翻译：在涉及在电介质中具有间隙位置的电介质/半导体界面的微电子电路中，通过将小原子直径的惰性气体引入到间隙位置来硬化这些界面的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式