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    • 1. 发明授权
    • On-chip thermometry for control of chip operating temperature
    • 用于芯片工作温度的片上测温
    • US5873053A
    • 1999-02-16
    • US841967
    • 1997-04-08
    • Wilbur D. PricerWendell P. NobleJohn A. FifieldJohn E. Gersbach
    • Wilbur D. PricerWendell P. NobleJohn A. FifieldJohn E. Gersbach
    • G01K7/01
    • G01K7/01Y10S323/907
    • Temperatures on a chip, including particular regions of a chip are monitored by sensing changes in sub-threshold conduction of a field effect transistor (FET) integrated on the chip due to changes in charge carrier population distribution with temperature therein. Such changes in sub-threshold current with temperature are preferably detected using a current mirror and two FETs with different channel geometry and slightly different gate voltages such that the currents are equal at a specific design temperature. The slightly different gate voltages are conveniently provided by a low current voltage divider with or without on-chip voltage regulation in which resistor ratios can be accurately and repeatably obtained. Variations from that temperature thus yield large current differences and substantial signal swing which improve noise immunity. Hysteresis can be applied to the output (or amplified output) of the current mirror to obtain bistable thermostat-like action. Variant applications provide sensing at plural chip locations (e.g. for sensing temperature gradients and temperatures of autonomously operating portions of the chip) and a plurality of temperatures on the chip. Temperatures thus monitored control implementation of performance enhancing algorithms in regard to the chip.
    • 通过感测集成在芯片上的场效应晶体管(FET)的亚阈值传导的变化,由于载流子群体分布随温度的变化而监测芯片上包括芯片的特定区域的温度。 亚阈值电流随温度的这种变化优选使用电流镜和具有不同通道几何形状和略微不同的栅极电压的两个FET来检测,使得电流在特定设计温度下是相等的。 通过具有或不具有片内电压调节的低电流分压器可以方便地提供略微不同的栅极电压,其中可以精确和重复地获得电阻器比率。 因此,该温度的变化产生大的电流差异和显着的信号摆动,这提高了抗噪声性。 迟滞可应用于电流镜的输出(或放大输出),以获得双稳态恒温器状作用。 变体应用提供在多个芯片位置处的感测(例如用于感测芯片的自主操作部分的温度梯度和温度)以及芯片上的多个温度。 因此监控的温度控制了关于芯片的性能增强算法的实现。
    • 2. 发明授权
    • Differential circuit having a high voltage switch
    • 差分电路具有高压开关
    • US4675559A
    • 1987-06-23
    • US628878
    • 1984-07-09
    • Peter E. CottrellJohn E. GersbachWilbur D. Pricer
    • Peter E. CottrellJohn E. GersbachWilbur D. Pricer
    • H03K5/02H03K17/16H03K19/003
    • H03K5/02
    • This invention provides a differential circuit having first and second transistors interconnected by a third transistor which is symmetrically constructed. A current source is selectively connected to the base of the third transistor. When the current source is connected to the base of the third transistor, the third transistor is saturated, forming a very low impedance path between the first and second transistors. However, when the current source is disconnected from the base of the third transistor, the third transistor impedes the voltage breakdown path between the bases of the first and second transistors. The differential circuit is particularly useful in an improved compact magnetic media system wherein both the stored signal and the write signal or voltage are applied to the bases of the first and second transistor of the circuit without the high write voltages destroying the high performance first and second transistors.
    • 本发明提供一种差分电路,其具有通过对称构造的第三晶体管互连的第一和第二晶体管。 电流源选择性地连接到第三晶体管的基极。 当电流源连接到第三晶体管的基极时,第三晶体管饱和,在第一和第二晶体管之间形成非常低的阻抗路径。 然而,当电流源与第三晶体管的基极断开时,第三晶体管阻止第一和第二晶体管的基极之间的电压击穿路径。 差分电路在改进的小型磁介质系统中特别有用,其中存储的信号和写入信号或电压都被施加到电路的第一和第二晶体管的基极,而没有高写入电压破坏高性能的第一和第二 晶体管。
    • 3. 发明授权
    • Sensitive amplifier having a high voltage switch
    • 具有高电压开关的敏感放大器
    • US4477846A
    • 1984-10-16
    • US332403
    • 1981-12-21
    • Peter E. CottrellJohn E. GersbachWilbur D. Pricer
    • Peter E. CottrellJohn E. GersbachWilbur D. Pricer
    • H03F3/343H03F3/34H03F3/347H03F3/72H03K5/02G11B5/09G11B5/02
    • H03K5/02
    • This invention provides an amplifier circuit having first and second transistors interconnected by a third transistor which is symmetrically constructed. A current source is selectively connected to the base of the third transistor. When the current source is connected to the base of the third transistor, the third transistor is saturated, forming a very low impedance path between the first and second transistors. However, when the current source is disconnected from the base of the third transistor, the third transistor impedes the voltage breakdown path between the bases of the first and second transistors. The amplifier circuit is particularly useful in an improved compact magnetic media system wherein both the stored signal and the write signal or voltage are applied to the bases of the first and second transistor of the amplifier without the high write voltages destroying the high performance first and second transistors.
    • 本发明提供一种放大器电路,其具有通过对称构造的第三晶体管互连的第一和第二晶体管。 电流源选择性地连接到第三晶体管的基极。 当电流源连接到第三晶体管的基极时,第三晶体管饱和,在第一和第二晶体管之间形成非常低的阻抗路径。 然而,当电流源与第三晶体管的基极断开时,第三晶体管阻止第一和第二晶体管的基极之间的电压击穿路径。 放大器电路在改进的小型磁介质系统中特别有用,其中存储的信号和写入信号或电压都被施加到放大器的第一和第二晶体管的基极,而没有高写入电压破坏高性能的第一和第二 晶体管。
    • 9. 发明授权
    • Integrated high-performance decoupling capacitor and heat sink
    • 集成高性能去耦电容和散热片
    • US06548338B2
    • 2003-04-15
    • US09764504
    • 2001-01-17
    • Kerry BernsteinRobert M. GeffkenWilbur D. PricerAnthony K. StamperSteven H. Voldman
    • Kerry BernsteinRobert M. GeffkenWilbur D. PricerAnthony K. StamperSteven H. Voldman
    • H01L218238
    • H01L28/40H01L23/3672H01L23/3735H01L27/0805H01L2924/0002H01L2924/10158H01L2924/00
    • A significant and very effective decoupling capacitor and heat sink combination that, in a single structure provides both a heat sink and a decoupling capacitor in close proximity to the active circuit on the chip requiring either heat sinking or decoupling capacitance or both. This is achieved by forming on a semiconductor chip, having a buried oxide layer therein, an integrated high-performance decoupling capacitor that uses a metallic deposit greater than 30 microns thick formed on the back surface of the chip and electrically connected to the active chip circuit to result in a significant and very effective decoupling capacitor and heat sink in close proximity to the active circuit on the chip requiring such decoupling capacitance and heat sinking capabilities. The decoupling capacitance can use the substrate of the chip itself as one of the capacitive plates and a formed metallic deposit as the second capacitive plate which also serves as a heat sink for the active circuit formed in the chip. The structure thus provides both a significant and effective decoupling capacitance in close proximity to the active circuit on the chip requiring such decoupling capacitance as well as providing improved heat sinking for the decoupled active circuit.
    • 一种显着且非常有效的去耦电容器和散热器组合,其在单个结构中提供散热器和去耦电容器,其紧邻芯片上的有源电路,需要散热或去耦电容或两者兼有。 这通过在其中具有掩埋氧化物层的半导体芯片上形成集成的高性能去耦电容器来实现,所述高性能去耦电容器使用形成在芯片的背面上并且电连接到有源芯片电路的大于30微米厚的金属沉积物 导致显着且非常有效的去耦电容器和散热器紧邻芯片上的有源电路,需要这种去耦电容和散热能力。 去耦电容可以使用芯片本身的衬底作为电容板之一,并且形成金属沉积物作为第二电容板,其也用作形成在芯片中的有源电路的散热器。 因此,该结构提供了重要且有效的去耦电容,其紧邻芯片上的有源电路,需要这种去耦电容,并为解耦的有源电路提供改进的散热。
    • 10. 发明授权
    • Method and apparatus for allocating data and instructions within a shared cache
    • 用于在共享缓存内分配数据和指令的方法和装置
    • US06532520B1
    • 2003-03-11
    • US09394965
    • 1999-09-10
    • Alvar A. DeanMarc R. FaucherJohn W. GoetzKenneth J. GoodnowPaul T. GutwinStephen W. MahinWilbur D. Pricer
    • Alvar A. DeanMarc R. FaucherJohn W. GoetzKenneth J. GoodnowPaul T. GutwinStephen W. MahinWilbur D. Pricer
    • G06F1200
    • G06F12/121G06F12/127G06F2212/1021G06F2212/6042
    • A method and apparatus are provided for managing cache allocation for a plurality of data types in a unified cache having dynamically allocable lines for first type data and for second type data. Cache allocation is managed by counting misses to first type data and misses to second type data in the unified cache, and by determining when a difference between a number of first type data misses and a number of second type data misses crosses a preselected threshold. A replacement algorithm of the unified cache then is adjusted in response to the detected crossing of the preselected threshold, the adjusting step including increasing a replacement priority of the first type data lines in the cache. The replacement algorithm preferably is an LRU algorithm wherein the adjusting step includes incrementing an age indication of the first type data lines. Hardware for implementing the inventive cache allocation management method comprises a miss counter configured to increment its count in response to a miss to first type data signal on a first counter input and to output a first logic state on a first counter output when the counter's count exceeds a first predetermined count. A priority adjustment circuit coupled to the first counter output increases the replacement priority of the first type data relative to the replacement priority of the second type data in response to the first logic state output by the miss counter.
    • 提供了一种方法和装置,用于管理具有用于第一类型数据和第二类型数据的动态可分配行的统一高速缓存中的多个数据类型的高速缓存分配。 高速缓存分配通过对统一高速缓存中的第一类型数据和第二类型数据的丢失进行计数,并且通过确定多个第一类型数据丢失与多个第二类型数据丢失之间的差异何时穿过预选阈值来管理高速缓存分配。 然后,响应于检测到的预选阈值的交叉,调整统一高速缓存的替换算法,该调整步骤包括增加高速缓存中的第一类型数据线的替换优先级。 替换算法优选地是LRU算法,其中调整步骤包括递增第一类型数据线的年龄指示。 用于实现本发明的高速缓存分配管理方法的硬件包括错误计数器,其配置为响应于第一计数器输入上的第一类型数据信号的未命中而增加其计数,并且当计数器的计数超过时,在第一计数器输出上输出第一逻辑状态 第一预定计数。 耦合到第一计数器输出的优先级调整电路响应于未命中计数器输出的第一逻辑状态,增加第一类型数据相对于第二类型数据的替换优先级的替换优先级。