会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS
    • 用于制造基于多元素的多层厚层的方法
    • WO2010020065A1
    • 2010-02-25
    • PCT/CN2008/001488
    • 2008-08-19
    • LATTICE POWER (JIANGXI) CORPORATIONJIANG, FengyiWANG, LiMO, ChunlanFANG, Wenqing
    • JIANG, FengyiWANG, LiMO, ChunlanFANG, Wenqing
    • H01L33/30C23C16/34H01L33/04H01L21/205H01L21/365
    • H01L21/0262H01L21/0254H01L33/007H01L33/06
    • A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas.
    • 通过使用氮化镓铟(InGaN)半导体材料制造量子阱的方法包括在反应器室中以第一预定温度在层状III-V族氮化物结构中制造势阱,通过将反应器中的In前体气体注入到 一种Ga前体气体。 该方法还包括在制造势阱之后,终止Ga前体气体,保持In前体气体的流动,并将反应器室中的温度升高到第二预定温度,同时调节In前体气体流速 从第一流量到第二流量。 此外,该方法包括在维持第二流量的同时在第二预定温度下退火和稳定势阱。 该方法还包括在恢复Ga前体气体的同时在第二预定温度下制造位于势阱上方的势垒。