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    • 1. 发明授权
    • Nanoimprint resist
    • 纳米抗蚀剂
    • US07431858B2
    • 2008-10-07
    • US10511402
    • 2003-04-09
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigPeter W OliveiraHelmut Schmidt
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigPeter W OliveiraHelmut Schmidt
    • B44C1/22C03C15/00C03C25/68C23F1/00
    • G03F7/0757B82Y10/00B82Y40/00G03F7/0002G03F7/0017G03F7/0047
    • The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.
    • 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。
    • 2. 发明申请
    • Nanoimprint resist
    • 纳米抗蚀剂
    • US20050224452A1
    • 2005-10-13
    • US10511402
    • 2003-04-09
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigHelmut Schmidt
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigHelmut Schmidt
    • G03F7/20B81C1/00G03F7/00G03F7/004G03F7/075H01L21/027H01L21/3065C23F1/00B05D5/00B44C1/22C03C15/00C03C25/68G03G15/00H01L21/311H01L29/06
    • G03F7/0757B82Y10/00B82Y40/00G03F7/0002G03F7/0017G03F7/0047
    • The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.
    • 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。
    • 5. 发明授权
    • Nanocomposite material for the production of index of refraction gradient films
    • 用于生产折射率梯度膜的纳米复合材料
    • US07473721B2
    • 2009-01-06
    • US10500194
    • 2003-01-03
    • Takamasa HaradaFumio KitaAndreas ZimmermannUlrike DellwoMartin MennigPeter W. OliveiraHelmut SchmidtHeike Schneider
    • Takamasa HaradaFumio KitaAndreas ZimmermannUlrike DellwoMartin MennigPeter W. OliveiraHelmut SchmidtHeike Schneider
    • C08K9/12
    • C08L83/06C08K3/013C09D183/06G02B1/04G03H2260/12C08L2666/04
    • The invention relates to solid or gel-type nanocomposite material which can be polymerised, containing a) 4.9 95.9 wt. % of a soluble polymer; b) 4-95 wt. % of a partially or totally condensed silane selected from the group of epoxyalkoxysilanes, alkoxysilanes and alkylalkoxysilanes, the silane having an inorganic condensation degree of between 33-100% and an organic conversion degree of between 0-95%; c) 0-60 wt. % of an acrylate; d) 0.1-50 wt. % of surface modified nanometric particles selected from the group of oxides, sulphides, selenides, tellurides, halogenides, carbides, arsenides, antimonides, nitrides, phosphides, carbonates, carboxylates, phosphates, sulphates, silicates, titanates, zirconates, aluminates, stannates, plumbates and a mixed oxides; e) 0-50 wt.-% of a plasticizer; f) 0-5 wt. % of a thermal or photochemical cross-linking initiator, sensitizer, auxiliary wetting agent, adhesive agent, antioxidant, stabiliser, coloring agent, photochrome material and thermochrome material in relation to the total weight (dry weight) of the nanocomposite material.
    • 本发明涉及可以聚合的固体或凝胶型纳米复合材料,其包含a)4.9 95.9wt。 %的可溶性聚合物; b)4-95wt。 选自环氧烷氧基硅烷,烷氧基硅烷和烷基烷氧基硅烷的部分或全部冷凝的硅烷的%,硅烷的无机缩合度在33-100%之间,有机转化度在0-95%之间; c)0-60wt。 %的丙烯酸酯; d)0.1-50wt。 选自氧化物,硫化物,硒化物,碲化物,卤化物,碳化物,砷化物,锑化物,氮化物,磷化物,碳酸盐,羧酸盐,磷酸盐,硫酸盐,硅酸盐,钛酸盐,锆酸盐,铝酸盐,锡酸盐,铅酸铅的表面改性纳米颗粒的% 和混合氧化物; e)0-50重量%的增塑剂; f)0-5wt。 相对于纳米复合材料的总重量(干重),热或光化学交联引发剂,敏化剂,辅助润湿剂,粘合剂,抗氧化剂,稳定剂,着色剂,感光材料和热变色材料的%。
    • 10. 发明授权
    • Substrates provided with a microstructured surface, methods for the production thereof, and their use
    • 具有微结构表面的基板,其制造方法及其用途
    • US06649266B1
    • 2003-11-18
    • US09959023
    • 2001-10-15
    • Frank GrossMartin MennigPeter W. OliveiraHelmut SchmidtStefan Sepeur
    • Frank GrossMartin MennigPeter W. OliveiraHelmut SchmidtStefan Sepeur
    • B32B1700
    • C09K3/18B05D1/40B05D5/08B08B17/06B08B17/065B29C59/026B29C2059/023Y10T428/31Y10T428/315Y10T428/31612Y10T428/31663
    • Substrates provided with a microstructured surface have a surface layer which (a) comprises a composition comprising condensates of one or more hydrolysable compounds of at least one element M from main groups III to V and/or transition groups II to IV of the Periodic Table of the Elements, at least some of these compounds containing not only hydrolysable groups A but also non-hydrolysable, carbon-containing groups B and the total molar ratio of groups A to groups B in the parent monomeric starting compounds being from 10:1 to 1:2, from 0.1 to 100 mol % of the groups B being groups B′ containing on average from 5 to 30 fluorine atoms which are attached to one or more aliphatic carbon atoms distanced from M by at least two atoms, and (b) has a microstructuring of such kind that the contact angle with respect to water or hexadecane is at least 5° higher than the contact angle of a corresponding smooth surface. The substrates provided with a microstructured surface are particularly suitable as transparent or translucent easy-to-clean systems.
    • 提供有微结构化表面的底物具有表面层,其表面层包含一种组合物,该组合物包含至少一种元素M的主要组III至V的一种或多种可水解化合物的缩合物和/或周期表的转变基团II至IV的组合物 元素,这些化合物中的至少一些化合物不仅含有可水解基团A,而且含有不可水解的含碳基团B,并且母体单体起始化合物中基团A与基团B的总摩尔比为10:1至1 2,0.1〜100摩尔%的基团B为含有平均5〜30个氟原子的基团B',其通过至少两个原子与一个或多个与M离开的一个或多个脂族碳原子连接,(b)具有 这种微结构化使得相对于水或十六烷的接触角比相应的光滑表面的接触角高至少5°。具有微结构化表面的基底特别合适 作为透明或半透明的易于清洁的系统。