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1. 发明授权

US07749862B2 Methods for minimizing defects when transferring a semiconductor useful layer 有权
标题翻译：传输半导体有用层时最小化缺陷的方法
公开(公告)号：US07749862B2
公开(公告)日：2010-07-06
申请号：US11624867
申请日：2007-01-19
申请人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
发明人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译：描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域无力，并从供体晶片上分离有用层。

2. 发明申请

US20070117229A1 METHODS FOR MINIMIZING DEFECTS WHEN TRANSFERRING A SEMICONDUCTOR USEFUL LAYER 有权
标题翻译：用于在传输半导体有用层时最小化缺陷的方法
公开(公告)号：US20070117229A1
公开(公告)日：2007-05-24
申请号：US11624867
申请日：2007-01-19
申请人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
发明人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/66
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译：描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域无力，并从供体晶片上分离有用层。

3. 发明申请

US20060040470A1 Methods for minimizing defects when transferring a semiconductor useful layer 审中-公开
标题翻译：传输半导体有用层时最小化缺陷的方法
公开(公告)号：US20060040470A1
公开(公告)日：2006-02-23
申请号：US11020057
申请日：2004-12-21
申请人： Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
发明人： Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译：描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域无力，并从供体晶片上分离有用层。

4. 发明申请

US20050028727A1 Method of detaching a layer from a wafer using a localized starting area 有权
标题翻译：使用局部起始区域从晶片分离层的方法
公开(公告)号：US20050028727A1
公开(公告)日：2005-02-10
申请号：US10766207
申请日：2004-01-29
申请人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
发明人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
IPC分类号： H01L21/762 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/76254
摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.
摘要翻译：一种从晶片上分离层的方法。在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。

5. 发明授权

US07465645B2 Method of detaching a layer from a wafer using a localized starting area 有权
标题翻译：使用局部起始区域从晶片分离层的方法
公开(公告)号：US07465645B2
公开(公告)日：2008-12-16
申请号：US10766207
申请日：2004-01-29
申请人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
发明人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/76254
摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.
摘要翻译：一种从晶片上分离层的方法。在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。

6. 发明授权

US07081399B2 Method for producing a high quality useful layer on a substrate utilizing helium and hydrogen implantations 有权
标题翻译：使用氦和氢注入在衬底上生产高质量有用层的方法
公开(公告)号：US07081399B2
公开(公告)日：2006-07-25
申请号：US10691403
申请日：2003-10-21
申请人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
发明人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
IPC分类号： H01L21/301
CPC分类号： H01L21/76254
摘要： A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical mechanical polishing (CMP) is not needed.
摘要翻译：一种用于在基板上制造高质量半导体材料有用层的方法。该方法包括将至少两种不同的原子物质植入施主衬底的表面至受控的平均注入深度以在其中形成弱化区域并限定有用层。进行植入步骤以使弱化区域的低频粗糙度最小化。接下来，该方法包括将支撑衬底接合到施主衬底的表面，以及沿着弱化区从施主衬底分离有用层。因此形成了在支撑基板上包括有用层的结构，其中有用层具有用于进一步处理的表面。该技术还包括热处理该结构以最小化有用层的表面的高频粗糙度。结果是具有足够平滑度的表面，使得不需要化学机械抛光（CMP）。

7. 发明申请

US20050026426A1 Method for producing a high quality useful layer on a substrate 有权
标题翻译：在基板上制造高品质有用层的方法
公开(公告)号：US20050026426A1
公开(公告)日：2005-02-03
申请号：US10691403
申请日：2003-10-21
申请人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
发明人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
IPC分类号： H01L21/762 , H01L21/44
CPC分类号： H01L21/76254
摘要： A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical mechanical polishing (CMP) is not needed.
摘要翻译：一种用于在基板上制造高质量半导体材料有用层的方法。该方法包括将至少两种不同的原子物质植入施主衬底的表面至受控的平均注入深度以在其中形成弱化区域并限定有用层。进行植入步骤以使弱化区域的低频粗糙度最小化。接下来，该方法包括将支撑衬底接合到施主衬底的表面，以及沿着弱化区从施主衬底分离有用层。因此形成了在支撑基板上包括有用层的结构，其中有用层具有用于进一步处理的表面。该技术还包括热处理该结构以最小化有用层的表面的高频粗糙度。结果是具有足够平滑度的表面，使得不需要化学机械抛光（CMP）。

8. 发明申请

US20060223283A1 Method for producing a high quality useful layer on a substrate 审中-公开
标题翻译：在基板上制造高品质有用层的方法
公开(公告)号：US20060223283A1
公开(公告)日：2006-10-05
申请号：US11446357
申请日：2006-06-05
申请人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
发明人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/324
摘要： A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical mechanical polishing (CMP) is not needed.
摘要翻译：一种用于在基板上制造高质量半导体材料有用层的方法。该方法包括将至少两种不同的原子物质植入施主衬底的表面至受控的平均注入深度以在其中形成弱化区域并限定有用层。进行植入步骤以使弱化区域的低频粗糙度最小化。接下来，该方法包括将支撑衬底接合到施主衬底的表面，以及沿着弱化区从施主衬底分离有用层。因此形成了在支撑基板上包括有用层的结构，其中有用层具有用于进一步处理的表面。该技术还包括热处理该结构以最小化有用层的表面的高频粗糙度。结果是具有足够平滑度的表面，使得不需要化学机械抛光（CMP）。

9. 发明申请

US20100105217A1 DEFECTIVITY OF POST THIN LAYER SEPARATION BY MODIFICATION OF ITS SEPARATION ANNEALING 有权
标题翻译：通过修改分离退火对薄层分离的缺陷
公开(公告)号：US20100105217A1
公开(公告)日：2010-04-29
申请号：US12529482
申请日：2008-03-18
申请人： Walter Schwarzenbach , Nadia Ben Mohamed , Fleur Guittard
发明人： Walter Schwarzenbach , Nadia Ben Mohamed , Fleur Guittard
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature changes along an upgrade allowing a high temperature to be reached and annealing at this high temperature to be stabilized, and a second phase during which the temperature changes along a downgrade, at the end of which the furnace is opened to unload the substrates from the furnace. The second phase is regulated so as to minimize temperature inhomogeneities such as cleavage defects at the detached surfaces of the substrates when the furnace is opened.
摘要翻译：在位于两个基板之一的给定深度的脆化区处分离两个基板的方法。该方法包括在炉中实现的分离退火步骤，其中退火包括第一阶段，在该阶段期间温度沿升级变化，允许达到高温并在该高温下进行退火以使其稳定，在第二阶段期间温度沿着降级而变化，其末端打开炉子以从炉中卸载基板。调节第二相以便在炉子打开时使温度不均匀性最小化，例如在基板的分离表面处的裂纹缺陷。

10. 发明授权

US08088671B2 Defectivity of post thin layer separation by modification of its separation annealing 有权
标题翻译：通过修改分离退火对薄层分离后的缺陷
公开(公告)号：US08088671B2
公开(公告)日：2012-01-03
申请号：US12529482
申请日：2008-03-18
申请人： Walter Schwarzenbach , Nadia Ben Mohamed , Fleur Guittard
发明人： Walter Schwarzenbach , Nadia Ben Mohamed , Fleur Guittard
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature changes along an upgrade allowing a high temperature to be reached and annealing at this high temperature to be stabilized, and a second phase during which the temperature changes along a downgrade, at the end of which the furnace is opened to unload the substrates from the furnace. The second phase is regulated so as to minimize temperature inhomogeneities such as cleavage defects at the detached surfaces of the substrates when the furnace is opened.
摘要翻译：在位于两个基板之一的给定深度的脆化区处分离两个基板的方法。该方法包括在炉中实现的分离退火步骤，其中退火包括第一阶段，在该阶段期间温度沿升级变化，允许达到高温并在该高温下进行退火以使其稳定，在第二阶段期间温度沿着降级而变化，其末端打开炉子以从炉中卸载基板。调节第二相以便在炉子打开时使温度不均匀性最小化，例如在基板的分离表面处的裂纹缺陷。

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