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1. 发明授权

US07081399B2 Method for producing a high quality useful layer on a substrate utilizing helium and hydrogen implantations 有权
标题翻译：使用氦和氢注入在衬底上生产高质量有用层的方法
公开(公告)号：US07081399B2
公开(公告)日：2006-07-25
申请号：US10691403
申请日：2003-10-21
申请人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
发明人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
IPC分类号： H01L21/301
CPC分类号： H01L21/76254
摘要： A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical mechanical polishing (CMP) is not needed.
摘要翻译：一种用于在基板上制造高质量半导体材料有用层的方法。该方法包括将至少两种不同的原子物质植入施主衬底的表面至受控的平均注入深度以在其中形成弱化区域并限定有用层。进行植入步骤以使弱化区域的低频粗糙度最小化。接下来，该方法包括将支撑衬底接合到施主衬底的表面，以及沿着弱化区从施主衬底分离有用层。因此形成了在支撑基板上包括有用层的结构，其中有用层具有用于进一步处理的表面。该技术还包括热处理该结构以最小化有用层的表面的高频粗糙度。结果是具有足够平滑度的表面，使得不需要化学机械抛光（CMP）。

2. 发明申请

US20050026426A1 Method for producing a high quality useful layer on a substrate 有权
标题翻译：在基板上制造高品质有用层的方法
公开(公告)号：US20050026426A1
公开(公告)日：2005-02-03
申请号：US10691403
申请日：2003-10-21
申请人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
发明人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
IPC分类号： H01L21/762 , H01L21/44
CPC分类号： H01L21/76254
摘要： A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical mechanical polishing (CMP) is not needed.
摘要翻译：一种用于在基板上制造高质量半导体材料有用层的方法。该方法包括将至少两种不同的原子物质植入施主衬底的表面至受控的平均注入深度以在其中形成弱化区域并限定有用层。进行植入步骤以使弱化区域的低频粗糙度最小化。接下来，该方法包括将支撑衬底接合到施主衬底的表面，以及沿着弱化区从施主衬底分离有用层。因此形成了在支撑基板上包括有用层的结构，其中有用层具有用于进一步处理的表面。该技术还包括热处理该结构以最小化有用层的表面的高频粗糙度。结果是具有足够平滑度的表面，使得不需要化学机械抛光（CMP）。

3. 发明申请

US20060223283A1 Method for producing a high quality useful layer on a substrate 审中-公开
标题翻译：在基板上制造高品质有用层的方法
公开(公告)号：US20060223283A1
公开(公告)日：2006-10-05
申请号：US11446357
申请日：2006-06-05
申请人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
发明人： Christophe Maleville , Eric Neyret , Nadia Ben Mohamed
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/324
摘要： A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical mechanical polishing (CMP) is not needed.
摘要翻译：一种用于在基板上制造高质量半导体材料有用层的方法。该方法包括将至少两种不同的原子物质植入施主衬底的表面至受控的平均注入深度以在其中形成弱化区域并限定有用层。进行植入步骤以使弱化区域的低频粗糙度最小化。接下来，该方法包括将支撑衬底接合到施主衬底的表面，以及沿着弱化区从施主衬底分离有用层。因此形成了在支撑基板上包括有用层的结构，其中有用层具有用于进一步处理的表面。该技术还包括热处理该结构以最小化有用层的表面的高频粗糙度。结果是具有足够平滑度的表面，使得不需要化学机械抛光（CMP）。

4. 发明申请

US20050028727A1 Method of detaching a layer from a wafer using a localized starting area 有权
标题翻译：使用局部起始区域从晶片分离层的方法
公开(公告)号：US20050028727A1
公开(公告)日：2005-02-10
申请号：US10766207
申请日：2004-01-29
申请人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
发明人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
IPC分类号： H01L21/762 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/76254
摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.
摘要翻译：一种从晶片上分离层的方法。在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。

5. 发明申请

US20070117229A1 METHODS FOR MINIMIZING DEFECTS WHEN TRANSFERRING A SEMICONDUCTOR USEFUL LAYER 有权
标题翻译：用于在传输半导体有用层时最小化缺陷的方法
公开(公告)号：US20070117229A1
公开(公告)日：2007-05-24
申请号：US11624867
申请日：2007-01-19
申请人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
发明人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/66
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译：描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域无力，并从供体晶片上分离有用层。

6. 发明授权

US07465645B2 Method of detaching a layer from a wafer using a localized starting area 有权
标题翻译：使用局部起始区域从晶片分离层的方法
公开(公告)号：US07465645B2
公开(公告)日：2008-12-16
申请号：US10766207
申请日：2004-01-29
申请人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
发明人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/76254
摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.
摘要翻译：一种从晶片上分离层的方法。在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。

7. 发明授权

US07749862B2 Methods for minimizing defects when transferring a semiconductor useful layer 有权
标题翻译：传输半导体有用层时最小化缺陷的方法
公开(公告)号：US07749862B2
公开(公告)日：2010-07-06
申请号：US11624867
申请日：2007-01-19
申请人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
发明人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译：描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域无力，并从供体晶片上分离有用层。

8. 发明申请

US20060040470A1 Methods for minimizing defects when transferring a semiconductor useful layer 审中-公开
标题翻译：传输半导体有用层时最小化缺陷的方法
公开(公告)号：US20060040470A1
公开(公告)日：2006-02-23
申请号：US11020057
申请日：2004-12-21
申请人： Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
发明人： Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译：描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域无力，并从供体晶片上分离有用层。

9. 发明申请

US20060141755A1 Method of configuring a process to obtain a thin layer with a low density of holes 有权
公开(公告)号：US20060141755A1
公开(公告)日：2006-06-29
申请号：US11328061
申请日：2006-01-10
申请人： Nadia Ben Mohamed , Eric Neyret , Daniel Delprat
发明人： Nadia Ben Mohamed , Eric Neyret , Daniel Delprat
IPC分类号： H01L21/20
CPC分类号： H01L21/76224 , H01L21/76254
摘要： A method for configuring a process for treating a semiconductor wafer. A minimum layer thickness of a transferred layer to be provided is determined to obtain a processed layer that has a preselected target thickness and target maximum density of through holes that extend completely therethrough, by conducting a predetermined finishing sequence of operations that improve the surface quality of the layer. The minimum thickness is determined such that the density of through holes remains below the target maximum density after each operation in the finishing sequence.

10. 发明授权

US07514341B2 Finishing process for the manufacture of a semiconductor structure 有权
标题翻译：制造半导体结构的精加工工艺
公开(公告)号：US07514341B2
公开(公告)日：2009-04-07
申请号：US11356926
申请日：2006-02-16
申请人： Eric Neyret , Alice Boussagol , Nadia Ben Mohamed
发明人： Eric Neyret , Alice Boussagol , Nadia Ben Mohamed
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： The invention relates to a process for the formation of a structure comprising a thin layer made of semiconductor material on a substrate, including the steps of providing a zone of weakness in a donor substrate; bonding the donor substrate to a support substrate; detaching a portion of the donor substrate to transfer it to the support substrate, wherein the detaching includes applying heat treating the donor substrate to weaken the zone of weakness without initiating detachment and applying an energy pulse to provoke self-maintained detachment of the donor substrate portion to transfer it to the support substrate; and subjecting the transferred portion of the donor substrate to a finishing operation to form a thin layer. The finishing operation is simplified compared to that which is conducted by a conventional process that achieves detaching by applying a heat treatment to provoke self-maintained detachment of the donor substrate portion, and the thin layer has a surface of the same smoothness as one prepared by the conventional process.
摘要翻译：本发明涉及一种用于形成包括由衬底上的半导体材料制成的薄层的结构的方法，包括以下步骤：在施主衬底中提供弱化区; 将施主衬底粘合到支撑衬底上; 分离供体基质的一部分以将其转移到支撑基底，其中分离包括施加热处理供体基底以弱化弱化区而不引发脱离并施加能量脉冲以引发供体基底部分的自维持脱离将其转移到支撑基板上; 并且对被转移的供体基底进行精加工操作以形成薄层。与通过施加热处理以实现供体基板部分的自我维持的分离而实现分离的常规方法进行的精加工操作相比，该薄层具有与由常规方法。

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