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1. 发明授权

US07056830B2 Method for plasma etching a dielectric layer 失效
标题翻译：等离子体蚀刻电介质层的方法
公开(公告)号：US07056830B2
公开(公告)日：2006-06-06
申请号：US10655231
申请日：2003-09-03
申请人： Walter R. Merry , Cecilia Y. Mak , Kam S. Law
发明人： Walter R. Merry , Cecilia Y. Mak , Kam S. Law
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/30655 , H01L21/31116
摘要： A method of etching a dielectric layer formed on a substrate including a sequence of processing cycles, wherein each cycle comprises steps of depositing an inactive polymeric film, activating the film to etch the structure, and removing the film is disclosed. In one embodiment, the method uses a fluorocarbon gas to form the polymeric film and a substrate bias to activate such film.
摘要翻译：一种蚀刻在衬底上形成的包括一系列处理循环的电介质层的方法，其中每个循环包括沉积非活性聚合物膜，激活该膜以蚀刻该结构并除去该膜的步骤。在一个实施方案中，该方法使用碳氟化合物气体来形成聚合物膜和衬底偏压以激活这种膜。

2. 发明授权

US08313664B2 Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber 有权
标题翻译：用于实时预测晶圆的自偏压和等离子体处理室中ESC电压的反馈控制的高效准确的方法
公开(公告)号：US08313664B2
公开(公告)日：2012-11-20
申请号：US12623243
申请日：2009-11-20
申请人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
发明人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
IPC分类号： G01L21/30
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3299 , H01L21/6833
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，可以使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量来确定晶片电压，并且该晶片电压可用于精确地控制DC晶片钳位电压。

3. 发明授权

US08076247B2 Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes 失效
标题翻译：通过控制相对电极之间的RF相位，晶片上的等离子体工艺均匀性
公开(公告)号：US08076247B2
公开(公告)日：2011-12-13
申请号：US11733770
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要翻译：提供了一种用于在等离子体反应器室中处理工件的方法。该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。该方法还包括提供边缘接地返回路径。该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

4. 发明申请

US20080179011A1 PLASMA REACTOR WITH WIDE PROCESS WINDOW EMPLOYING PLURAL VHF SOURCES 审中-公开
标题翻译：等离子体反应器，具有采用多个VHF源的宽过程窗口
公开(公告)号：US20080179011A1
公开(公告)日：2008-07-31
申请号：US11734040
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.
摘要翻译：等离子体反应器包括用于支撑工件的室中的静电卡盘，面向静电卡盘的天花板电极和静电卡盘中的ESC电极，其具有耦合到ESC电极的静电钳位电压源。反应器还包括耦合到基座电极的LF或HF频率的至少第一RF偏置源，以及耦合到相同或不同电极的不同频率的第一和第二VHF电源。第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。

5. 发明申请

US20110120505A1 APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING 审中-公开
标题翻译：背景清洁期间前侧保护的装置和方法
公开(公告)号：US20110120505A1
公开(公告)日：2011-05-26
申请号：US13017569
申请日：2011-01-31
申请人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： B08B3/00 , B08B13/00 , H05H1/24 , B05B1/00
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

6. 发明申请

US20100136793A1 EFFICIENT AND ACCURATE METHOD FOR REAL-TIME PREDICTION OF THE SELF-BIAS VOLTAGE OF A WAFER AND FEEDBACK CONTROL OF ESC VOLTAGE IN PLASMA PROCESSING CHAMBER 有权
标题翻译：用于实时预测水平自动偏置电压的有效和准确的方法和等离子体处理室中ESC电压的反馈控制
公开(公告)号：US20100136793A1
公开(公告)日：2010-06-03
申请号：US12623243
申请日：2009-11-20
申请人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
发明人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
IPC分类号： H01L21/3065
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3299 , H01L21/6833
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，可以使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量来确定晶片电压，并且该晶片电压可用于精确地控制DC晶片钳位电压。

7. 发明申请

US20080182416A1 PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY APPORTIONING POWER AMONG PLURAL VHF SOURCES 失效
标题翻译：通过在多个VHF源上分配功率，在等离子体处理过程中的均匀性
公开(公告)号：US20080182416A1
公开(公告)日：2008-07-31
申请号：US11733764
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165
摘要： A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.
摘要翻译：提供了一种用于处理具有至少包括天花板电极和工件支撑电极的电极的等离子体反应器室中的工件的方法。该方法包括将各个VHF频率f 1和f 2的相应RF功率源耦合到（a）电极中的相应电极或（b）电极中的公共电极，其中f 1足够高以产生中心高不均匀的等离子体离子分布和f 2足够低以产生中心 - 低不均匀等离子体离子分布。该方法还包括调整f 1频率处的RF参数与f 2频率处的RF参数的比率，以便控制等离子体离子密度分布，RF参数是RF功率，RF电压或RF电流中的任何一个。

8. 发明申请

US20080178803A1 PLASMA REACTOR WITH ION DISTRIBUTION UNIFORMITY CONTROLLER EMPLOYING PLURAL VHF SOURCES 审中-公开
标题翻译：具有离子分布均质控制器的等离子体反应器使用多个甚高频源
公开(公告)号：US20080178803A1
公开(公告)日：2008-07-31
申请号：US11733913
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： B05C11/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32935
摘要： A plasma reactor includes a ceiling electrode facing a workpiece support pedestal and a pedestal electrode in the pedestal and first and second VHF power sources of different frequencies coupled to the same or to different ones of the ceiling electrode and the pedestal electrode. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber. The reactor further includes a controller programmed to change the relative output power levels of the first and second VHF power sources to: (a) increase the relative output power level of the first VHF power source whenever plasma ion distribution has a predominantly edge-high non-uniformity, and (b) increase the relative output power level of the second VHF power source whenever plasma ion distribution has a predominantly center-high non-uniformity.
摘要翻译：等离子体反应器包括面对工件支撑基座的顶板电极和基座中的基座电极以及耦合到天花板电极和基座电极中相同或不同的不同频率的第一和第二VHF电源。第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。电抗器还包括被编程为将第一和第二VHF电源的相对输出功率电平改变为：（a）只要等离子体离子分布具有主要为边缘高的非高电平的第一VHF电源的相对输出功率电平，（b）当等离子体离子分布主要是中心高的不均匀性时，增加第二VHF电源的相对输出功率电平。

9. 发明授权

US08632689B2 Temperature control with stacked proportioning valve 有权
标题翻译：具有堆积比例阀的温度控制
公开(公告)号：US08632689B2
公开(公告)日：2014-01-21
申请号：US13652147
申请日：2012-10-15
申请人： Walter R. Merry
发明人： Walter R. Merry
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01J37/32522 , Y10T137/86541 , Y10T137/86622 , Y10T137/86863
摘要： A stacked proportioning valve having a body with at least two sets of ports disposed at different positions along a longitudinal length of the body, each set of ports including at least three ports at different angular positions to couple to fluid conduits, a rotor disposed in the valve body has at least two sections stacked along the longitudinal length, each section comprising three fluid channels in longitudinal alignment with one of the sets of ports, and a drive shaft affixed to the rotor, the drive shaft to rotate the rotor over angular positions to fluidly couple together pairs of ports in each of the sets of ports synchronously as a function of the rotor's angular position. In embodiments a component of a plasma processing chamber, such as a plasma etch chamber is fluidly coupled by the stack proportioning valve to reservoirs of both a hot and cold chiller.
摘要翻译：一种堆叠式配比阀，具有主体，该主体具有至少两组端口，沿着主体的纵向长度设置在不同位置，每组端口包括至少三个不同角度位置处的端口以联接到流体导管;转子，阀体具有沿着纵向长度堆叠的至少两个部分，每个部分包括与一组端口纵向对准的三个流体通道，以及固定到转子的驱动轴，驱动轴将转子旋转到角位置作为转子的角位置的函数，将各组端口中的端口对中的一对端口流体耦合。在实施例中，等离子体处理室（诸如等离子体蚀刻室）的部件通过堆叠比例阀流体耦合到热和冷冷水机组的储存器。

10. 发明申请

US20090293907A1 METHOD OF SUBSTRATE POLYMER REMOVAL 审中-公开
标题翻译：底物聚合物去除方法
公开(公告)号：US20090293907A1
公开(公告)日：2009-12-03
申请号：US12246137
申请日：2008-10-06
申请人： Nancy Fung , Siyi Li , Ying Rui , Walter R. Merry , Anchel Sheyner , Kathryn Keswick , Shing-Li Sung , Mang-Mang Ling , Chia-Ling Kao , Wei-Te Wu , Kang-Lie Chiang
发明人： Nancy Fung , Siyi Li , Ying Rui , Walter R. Merry , Anchel Sheyner , Kathryn Keswick , Shing-Li Sung , Mang-Mang Ling , Chia-Ling Kao , Wei-Te Wu , Kang-Lie Chiang
IPC分类号： B08B6/00
CPC分类号： H01L21/67069 , G03F7/427 , H01L21/02087 , H01L21/0209
摘要： Methods for cleaning a substrate are provided. In one embodiment, the method includes depositing a polymer on a substrate. A cleaning gas is provided to clean a frontside, a bevel edge, and a backside of the substrate. The cleaning gas may include various reactive chemicals such as H2 and N2 in one embodiment. In another embodiment, the cleaning gas may include H2 and H2O. Plasma is initiated from the cleaning gas and used to remove polymer that formed on a bevel edge, backside, or frontside of the substrate during semiconductor processing.
摘要翻译：提供了清洗基板的方法。在一个实施方案中，该方法包括在基底上沉积聚合物。提供清洁气体以清洁基板的前侧，斜边和背面。在一个实施方案中，清洁气体可以包括各种反应性化学品，例如H 2和N 2。在另一个实施方案中，清洁气体可以包括H 2和H 2 O. 等离子体从清洁气体引发，并用于去除在半导体处理期间在衬底的斜边缘，背面或前面形成的聚合物。

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