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1. 发明授权

US07556974B2 Optical semiconductor device with multiple quantum well structure 有权
标题翻译：具有多量子阱结构的光半导体器件
公开(公告)号：US07556974B2
公开(公告)日：2009-07-07
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于具有第一电子的氮化物半导体材料的第一组合物的器件阱层（6a）提供具有与第一电子能量相比更高的电子能量的氮化物半导体材料的第二组合物的能量和势垒层（6b），然后通过辐射活性量子阱层（在生长方向上） 6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

2. 发明申请

US20050042864A1 Ohmic contact structure and method for the production of the same 审中-公开
标题翻译：欧姆接触结构及其制作方法相同
公开(公告)号：US20050042864A1
公开(公告)日：2005-02-24
申请号：US10495620
申请日：2002-11-12
申请人： Georg Bruderl , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Uwe Strauss , Andreas Weimar
发明人： Georg Bruderl , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Uwe Strauss , Andreas Weimar
IPC分类号： H01S5/042 , H01L21/285 , H01L21/363 , H01L29/20 , H01L29/45 , H01L33/14 , H01L33/32 , H01L33/40 , H01L21/44 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/14 , H01L33/325 , H01L33/40
摘要： An ohmic contact structure having a metallization (14) arranged on a semiconductor material (10), a contact layer being formed in the semiconductor material (10), which contact layer has a first partial region adjoining the metallization (14) and a second partial region (18) arranged downstream of the first partial region. The contact layer is doped in such a way that the doping concentration (N2) in the first partial region (12) is greater than the doping concentration (N1) in the second partial region (18).
摘要翻译：具有布置在半导体材料（10）上的金属化（14）的欧姆接触结构，在半导体材料（10）中形成的接触层，该接触层具有邻接金属化层（14）的第一部分区域和第二部分区域（18）布置在第一部分区域的下游。以使第一部分区域（12）中的掺杂浓度（N2）大于第二部分区域（18）中的掺杂浓度（N1）的方式掺杂接触层。

3. 发明授权

US07008810B2 Method for fabricating at least one mesa or ridge structure or at least one electrically pumped region in a layer or layer sequence 有权
标题翻译：用于在层或层序列中制造至少一个台面或脊结构或至少一个电泵浦区域的方法
公开(公告)号：US07008810B2
公开(公告)日：2006-03-07
申请号：US10804514
申请日：2004-03-19
申请人： Christine Höss , Andreas Weimar , Andreas Leber , Alfred Lell , Helmut Fischer , Volker Harle
发明人： Christine Höss , Andreas Weimar , Andreas Leber , Alfred Lell , Helmut Fischer , Volker Harle
IPC分类号： H01L21/00
CPC分类号： H01L33/005 , H01S5/021 , H01S5/2081 , H01S5/22 , H01S5/2214 , H01S5/32341 , Y10S438/951
摘要： A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer (4) and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer (4) is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material. The sacrificial layer (4) is removed so that the layer that has remained above the sacrificial layer as seen from the layer or layer sequence is lifted off. A method is also disclosed for fabricating at least one gain-controlled laser diode in a layer sequence, in which method steps analogous to those described above are employed.
摘要翻译：一种用于在层或层序列中制造至少一个台面或脊状结构的方法，其中牺牲层（4）被施加并在层或层序列上形成图案。掩模层被施加和图案化在牺牲层上方以定义台面或脊尺寸。去除牺牲层（4）和层或层序列，使得台层或脊结构以层或层序列形成。牺牲层（4）的一部分从其前面的步骤中未被覆盖的侧面区域选择性地去除，从而与牺牲层上方的层相比较，牺牲层保持较窄，如从层或层序列。至少将涂层施加到在前述步骤中制造的结构的侧壁上，使得残余牺牲层的侧面区域不会被涂层材料完全覆盖。去除牺牲层（4），使得从层或层序列看到的保留在牺牲层上方的层被提升。还公开了一种用于在层序列中制造至少一个增益控制的激光二极管的方法，其中采用与上述类似的方法步骤。

4. 发明申请

US20070278508A1 Thin Film Led Comprising a Current-Dispersing Structure 有权
标题翻译：包含电流分散结构的薄膜引线
公开(公告)号：US20070278508A1
公开(公告)日：2007-12-06
申请号：US10587666
申请日：2005-01-25
申请人： Johannes Baur , Berthold Hahn , Volker Harle , Raimund Oberschmid , Andreas Weimar
发明人： Johannes Baur , Berthold Hahn , Volker Harle , Raimund Oberschmid , Andreas Weimar
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).
摘要翻译：一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

5. 发明申请

US20070238210A1 Method for producing an optoelectronic component 有权
标题翻译：光电子元件的制造方法
公开(公告)号：US20070238210A1
公开(公告)日：2007-10-11
申请号：US11810326
申请日：2007-06-04
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.
摘要翻译：公开了一种用于制造光电子部件的方法。该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小，并去除掩模层。

6. 发明申请

US20110204322A1 Optoelectronic Semiconductor Body and Method for Producing an Optoelectronic Semiconductor Body 审中-公开
标题翻译：光电子半导体器件及其制造方法
公开(公告)号：US20110204322A1
公开(公告)日：2011-08-25
申请号：US12745683
申请日：2008-11-26
申请人： Guido Weiss , Berthold Hahn , Ulrich Zehnder , Andreas Weimar
发明人： Guido Weiss , Berthold Hahn , Ulrich Zehnder , Andreas Weimar
IPC分类号： H01L33/06
CPC分类号： H01L33/02 , H01L33/22 , H01L33/325 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body is provided which has an epitaxial semiconductor layer sequence based on nitride compound semiconductors. The semiconductor layer sequence comprises a buffer layer, which is nominally undoped or at least partially n-conductively doped, an active zone, which is suitable for emitting or receiving electromagnetic radiation, and a contact layer, which is n-conductively doped, arranged between the buffer layer and the active zone. The n-dopant concentration is greater in the contact layer than in the buffer layer. The semiconductor layer sequence contains a recess, which extends through the buffer layer and in which an electrical contact material is arranged and adjoins the contact layer. A method is additionally indicated which is suitable for producing such a semiconductor body.
摘要翻译：提供一种具有基于氮化物半导体的外延半导体层序列的光电半导体体。半导体层序列包括名义上未掺杂或至少部分n导电掺杂的缓冲层，适用于发射或接收电磁辐射的有源区和被导电掺杂的接触层，其布置在缓冲层和活动区。接触层中的n-掺杂浓度大于缓冲层中的n掺杂浓度。半导体层序列包含一个凹槽，其延伸穿过缓冲层，并且其中布置电接触材料并与接触层邻接。另外指出适用于制造这种半导体本体的方法。

7. 发明授权

US07742677B2 Method for producing an optoelectronic component 有权
标题翻译：光电子元件的制造方法
公开(公告)号：US07742677B2
公开(公告)日：2010-06-22
申请号：US11810326
申请日：2007-06-04
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： G02B6/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.
摘要翻译：公开了一种用于制造光电子部件的方法。该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小，并去除掩模层。

8. 发明授权

US07227191B2 Optoelectronic component having a plurality of current expansion layers and method for producing it 有权
标题翻译：具有多个电流膨胀层的光电子部件及其制造方法
公开(公告)号：US07227191B2
公开(公告)日：2007-06-05
申请号：US11120514
申请日：2005-05-02
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： H01L27/15 , H01L27/148 , H01L27/14 , H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).
摘要翻译：一种具有半导体芯片的光电子部件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。提供连接触点（9），用于将电流施加到活动区域中。第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。

9. 发明申请

US20050253163A1 Optoelectronic component having a plurality of current expansion layers and method for producing it 有权
标题翻译：具有多个电流膨胀层的光电子部件及其制造方法
公开(公告)号：US20050253163A1
公开(公告)日：2005-11-17
申请号：US11120514
申请日：2005-05-02
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： H01L33/32 , H01L33/38 , H01L33/40 , H01S5/22 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).
摘要翻译：一种具有半导体芯片的光电子元件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。提供连接触点（9），用于将电流施加到活动区域中。第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。

10. 发明申请

US20090212307A1 Light-emitting diode chip comprising a contact structure 有权
标题翻译：包括接触结构的发光二极管芯片
公开(公告)号：US20090212307A1
公开(公告)日：2009-08-27
申请号：US11921530
申请日：2006-06-02
申请人： Johannes Baur , Volker Hárle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
发明人： Johannes Baur , Volker Hárle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).
摘要翻译：在具有辐射出射区域（1）的发光二极管芯片和设置在辐射出口区域（1）上的接触结构（2,3,4），并且包括接合焊盘（4）和多个接触腹板 2，3），其被设置用于电流膨胀并且导电连接到焊盘（4），焊盘（4）布置在辐射出口区域（1）的边缘区域中。发光二极管芯片减少了接触结构（2,3,4）中发射的辐射（23）的吸收。

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