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1. 发明申请

US20070238210A1 Method for producing an optoelectronic component 有权
标题翻译：光电子元件的制造方法
公开(公告)号：US20070238210A1
公开(公告)日：2007-10-11
申请号：US11810326
申请日：2007-06-04
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.
摘要翻译：公开了一种用于制造光电子部件的方法。该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小，并去除掩模层。

2. 发明申请

US20050253163A1 Optoelectronic component having a plurality of current expansion layers and method for producing it 有权
标题翻译：具有多个电流膨胀层的光电子部件及其制造方法
公开(公告)号：US20050253163A1
公开(公告)日：2005-11-17
申请号：US11120514
申请日：2005-05-02
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： H01L33/32 , H01L33/38 , H01L33/40 , H01S5/22 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).
摘要翻译：一种具有半导体芯片的光电子元件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。提供连接触点（9），用于将电流施加到活动区域中。第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。

3. 发明授权

US07742677B2 Method for producing an optoelectronic component 有权
标题翻译：光电子元件的制造方法
公开(公告)号：US07742677B2
公开(公告)日：2010-06-22
申请号：US11810326
申请日：2007-06-04
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： G02B6/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.
摘要翻译：公开了一种用于制造光电子部件的方法。该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小，并去除掩模层。

4. 发明授权

US07227191B2 Optoelectronic component having a plurality of current expansion layers and method for producing it 有权
标题翻译：具有多个电流膨胀层的光电子部件及其制造方法
公开(公告)号：US07227191B2
公开(公告)日：2007-06-05
申请号：US11120514
申请日：2005-05-02
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： H01L27/15 , H01L27/148 , H01L27/14 , H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).
摘要翻译：一种具有半导体芯片的光电子部件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。提供连接触点（9），用于将电流施加到活动区域中。第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。

5. 发明授权

US08581279B2 Light-emitting diode chip comprising a contact structure 有权
公开(公告)号：US08581279B2
公开(公告)日：2013-11-12
申请号：US11921530
申请日：2006-06-02
申请人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
发明人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

6. 发明授权

US06897488B2 Radiation-emitting chip 有权
标题翻译：辐射发射芯片
公开(公告)号：US06897488B2
公开(公告)日：2005-05-24
申请号：US10415810
申请日：2001-11-06
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Raimund Oberschmid , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Raimund Oberschmid , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
IPC分类号： H01L33/02 , H01L33/08 , H01L33/20 , H01L33/40 , H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/405
摘要： A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).
摘要翻译：发光芯片（3）具有透镜型耦合输出窗（4），其基部区域（5）设置有反射镜区域（6）。布置在耦合出窗口（4）的耦合输出区域（7）上的是具有光子发射pn结（10）的层序列（9）。由pn结发射的光子在反射镜区域（6）处被反射，并且可以通过耦合输出区域（7）离开耦合出的窗口（4）。

7. 发明申请

US20090212307A1 Light-emitting diode chip comprising a contact structure 有权
标题翻译：包括接触结构的发光二极管芯片
公开(公告)号：US20090212307A1
公开(公告)日：2009-08-27
申请号：US11921530
申请日：2006-06-02
申请人： Johannes Baur , Volker Hárle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
发明人： Johannes Baur , Volker Hárle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).
摘要翻译：在具有辐射出射区域（1）的发光二极管芯片和设置在辐射出口区域（1）上的接触结构（2,3,4），并且包括接合焊盘（4）和多个接触腹板 2，3），其被设置用于电流膨胀并且导电连接到焊盘（4），焊盘（4）布置在辐射出口区域（1）的边缘区域中。发光二极管芯片减少了接触结构（2,3,4）中发射的辐射（23）的吸收。

8. 发明授权

US08368092B2 Thin film LED comprising a current-dispersing structure 有权
标题翻译：薄膜LED包括电流分散结构
公开(公告)号：US08368092B2
公开(公告)日：2013-02-05
申请号：US10587666
申请日：2005-01-25
申请人： Johannes Baur , Berthold Hahn , Volker Härle , Raimund Oberschmid , Andreas Weimar
发明人： Johannes Baur , Berthold Hahn , Volker Härle , Raimund Oberschmid , Andreas Weimar
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).
摘要翻译：一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

9. 发明申请

US20070278508A1 Thin Film Led Comprising a Current-Dispersing Structure 有权
标题翻译：包含电流分散结构的薄膜引线
公开(公告)号：US20070278508A1
公开(公告)日：2007-12-06
申请号：US10587666
申请日：2005-01-25
申请人： Johannes Baur , Berthold Hahn , Volker Harle , Raimund Oberschmid , Andreas Weimar
发明人： Johannes Baur , Berthold Hahn , Volker Harle , Raimund Oberschmid , Andreas Weimar
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).
摘要翻译：一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

10. 发明授权

US08598604B2 Optoelectronic component 有权
标题翻译：光电元件
公开(公告)号：US08598604B2
公开(公告)日：2013-12-03
申请号：US12088250
申请日：2006-09-27
申请人： Dominik Eisert , Norbert Linder , Raimund Oberschmid , Dirk Berben , Frank Jermann , Martin Zachau
发明人： Dominik Eisert , Norbert Linder , Raimund Oberschmid , Dirk Berben , Frank Jermann , Martin Zachau
IPC分类号： H04N9/31
CPC分类号： H01L33/46 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.
摘要翻译：公开了一种具有半导体本体的包括有源半导体层序列的光电子部件，其适于产生从半导体本体的正面发射的第一波长的电磁辐射。该元件还包括在其发射方向上跟随半导体本体的第一波长转换物质，其将第一波长的辐射转换成不同于第一波长的第二波长的辐射，以及在有源半导体层序列之间的第一选择性反射层以及选择性地反射第二波长的辐射并对第一波长的辐射透明的第一波长转换物质。

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