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    • 6. 发明授权
    • Process for making an on-chip vacuum tube device
    • 制造片上真空管装置的方法
    • US07670203B2
    • 2010-03-02
    • US11649197
    • 2007-01-03
    • Peter Ledel GammelRichard Edwin HowardOmar Daniel LopezWei Zhu
    • Peter Ledel GammelRichard Edwin HowardOmar Daniel LopezWei Zhu
    • H01J9/02H01J9/18H01J1/02
    • H01J23/165H01J9/02H01J9/022H01J21/105H01J25/00H01J2209/18
    • A method of making a microelectromechanical microwave vacuum tube device is disclosed. The device is formed by defining structural regions and sacrificial regions in a substrate. The structural regions have flexural members. The substrate is treated to remove the sacrificial regions and release the structural regions such that the structural regions are moveable by the flexural members. The structural regions include a device cathode, a device grid or both a device cathode and a device grid. The cathode comprises electron emitters. The device further includes an output structure where amplified microwave power is removed from the device. In the method, the cathode surface and the grid surface are moved to a position where they are substantially parallel to each other and substantially perpendicular to the substrate. The device further comprises an anode that is substantially parallel to the cathode surface and the grid surface.
    • 公开了一种制造微机电微波真空管装置的方法。 该器件通过在衬底中限定结构区域和牺牲区域而形成。 结构区域具有弯曲构件。 处理衬底以去除牺牲区域并释放结构区域,使得结构区域可被弯曲构件移动。 结构区域包括器件阴极,器件栅格或器件阴极和器件栅格。 阴极包括电子发射体。 该装置还包括其中放大的微波功率从该装置移除的输出结构。 在该方法中,阴极表面和栅格表面移动到它们基本上彼此平行并且基本上垂直于衬底的位置。 该装置还包括基本上平行于阴极表面和栅格表面的阳极。