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1. 发明申请

US20130256146A1 CLEANING ELECTROPLATING SUBSTRATE HOLDERS USING REVERSE CURRENT DEPLATING 有权
标题翻译：使用反向电流去除清洁电镀基板支架
公开(公告)号：US20130256146A1
公开(公告)日：2013-10-03
申请号：US13853935
申请日：2013-03-29
申请人： Lee Peng Chua , Steven T. Mayer , Thomas A. Ponnuswamy , Santosh Kumar
发明人： Lee Peng Chua , Steven T. Mayer , Thomas A. Ponnuswamy , Santosh Kumar
IPC分类号： C25F1/00
CPC分类号： C25F1/00 , C25D17/001 , C25D17/06 , C25D21/00 , C25D21/12 , C25F7/00 , H01L21/67766 , H01L21/67769 , H01L21/68707 , Y10S901/02
摘要： Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.
摘要翻译：提供了使用反向电流去除技术从电镀设备中除去非预期的金属沉积物的清洁方法和系统。这样的清洁包括将清洁（脱落）盘定位在类似于经常处理的基底的电镀杯中。清洁盘的前表面包括耐腐蚀的导电材料以形成电连接以沉积在杯的表面上。将盘密封在杯中并浸没在电镀液中。然后将反向电流施加到盘的前导电表面以开始沉积物的脱落。杯子内的密封压缩可能在清洁过程中发生变化，导致唇形密封件发生不同的变形，并形成与沉积物的新的电气连接。所提出的清洁可以用于去除在电镀期间形成的沉积物，特别是广泛用于半导体和晶片级封装的锡 - 银合金。

2. 发明授权

US09221081B1 Automated cleaning of wafer plating assembly 有权
标题翻译：晶圆电镀组件的自动清洗
公开(公告)号：US09221081B1
公开(公告)日：2015-12-29
申请号：US13563619
申请日：2012-07-31
申请人： Steven T. Mayer , Thomas A. Ponnuswamy , Lee Peng Chua , Robert Rash
发明人： Steven T. Mayer , Thomas A. Ponnuswamy , Lee Peng Chua , Robert Rash
IPC分类号： B08B1/00 , B08B1/04 , H01L21/67
CPC分类号： C25D21/08 , B08B1/006 , B08B1/04 , B08B3/00 , C23G1/02 , C25D21/00 , C25D21/12 , G01N21/9501 , H01L21/67028 , H01L21/67046 , H01L21/6723
摘要： Disclosed herein are cleaning discs for cleaning one or more elements of a semiconductor processing apparatus. In some embodiments, the disc may have a substantially circular upper surface, a substantially circular lower surface, a substantially circular edge joining the upper and lower surfaces, and a plurality of pores opening at the edge and having an interior extending into the interior of the disc. In some embodiments, the pores are dimensioned such that a cleaning agent may be retained in the interior of the pores by an adhesive force between the cleaning agent and the interior surface of the pores. Also disclosed herein are cleaning methods involving loading a cleaning agent into a plurality of pores of a cleaning disc, positioning the cleaning disc within a semiconductor processing apparatus, and releasing cleaning agent from the plurality of pores such that elements of the apparatus are contacted by the released cleaning agent.
摘要翻译：这里公开了用于清洁半导体处理装置的一个或多个元件的清洁盘。在一些实施例中，盘可以具有基本上圆形的上表面，基本上圆形的下表面，连接上表面和下表面的基本圆形的边缘，以及在边缘处开口的多个孔，并且具有延伸到内侧的内部光盘。在一些实施例中，孔的尺寸使得清洁剂可以通过清洁剂和孔的内表面之间的粘合力保持在孔的内部。本文还公开了一种清洁方法，其包括将清洁剂装载到清洁盘的多个孔中，将清洁盘定位在半导体处理装置内，以及从多个孔释放清洁剂，使得装置的元件与释放清洁剂。

3. 发明申请

US20130292254A1 METHODS AND APPARATUSES FOR CLEANING ELECTROPLATING SUBSTRATE HOLDERS 审中-公开
标题翻译：清洗电镀基板支架的方法和装置
公开(公告)号：US20130292254A1
公开(公告)日：2013-11-07
申请号：US13852767
申请日：2013-03-28
申请人： Santosh Kumar , Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , Chad Michael Hosack , Robert Rash , Lee Peng Chua , David Porter
发明人： Santosh Kumar , Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , Chad Michael Hosack , Robert Rash , Lee Peng Chua , David Porter
IPC分类号： C25D17/00
CPC分类号： B08B3/022 , B08B3/041 , C25D7/12 , C25D17/00 , C25D17/001 , C25D21/00 , C25D21/12 , H01L21/67051
摘要： Disclosed herein are methods of cleaning a lipseal and/or cup bottom of an electroplating device by removing metal deposits accumulated in prior electroplating operations. The methods may include orienting a nozzle such that it is pointed substantially at the inner circular edge of the lipseal and/or cup bottom, and dispensing a stream of cleaning solution from the nozzle such that the stream contacts the inner circular edge of the lipseal and/or cup bottom while they are being rotated, removing metal deposits. In some embodiments, the stream has a velocity component against the rotational direction of the lipseal and/or cup bottom. In some embodiments, the deposits may include a tin/silver alloy. Also disclosed herein are cleaning apparatuses for mounting in electroplating devices and for removing electroplated metal deposits from their lipseals and/or cup bottoms. In some embodiments, the cleaning apparatuses may include a jet nozzle.
摘要翻译：本文公开了通过去除在现有电镀操作中积累的金属沉积物来清洁电镀装置的唇密封和/或杯底的方法。所述方法可以包括使喷嘴定向成使得其基本上指向唇密封件和/或杯底部的内圆形边缘，并且从喷嘴分配清洁溶液流，使得流接触唇塞的内圆形边缘，并且 /或杯底，同时旋转，去除金属沉积物。在一些实施例中，流具有抵抗唇密封和/或杯底的旋转方向的速度分量。在一些实施例中，沉积物可以包括锡/银合金。本文还公开了用于安装在电镀装置中并用于从其密封件和/或杯底部去除电镀金属沉积物的清洁装置。在一些实施例中，清洁设备可以包括喷嘴。

4. 发明授权

US08288288B1 Transferring heat in loadlocks 有权
标题翻译：在装载锁中传热
公开(公告)号：US08288288B1
公开(公告)日：2012-10-16
申请号：US12140196
申请日：2008-06-16
申请人： Christopher Gage , Lee Peng Chua
发明人： Christopher Gage , Lee Peng Chua
IPC分类号： H01L21/00
CPC分类号： H01L21/67109 , H01L21/67201
摘要： Methods that increase the overall rate of heat transfer between a substrate and a heat sink or source, e.g., in a loadlock are provided. According to various embodiments, the methods involve varying the heat transfer coefficient of a heat transfer gas in the loadlock or other chamber. The heat transfer coefficient is varied to reduce the time-dependent variation of the rate of heat transfer. As a result, the overall rate of heat transfer is improved. In certain embodiments, the methods involve varying the gas pressure of a chamber in order to affect the rate of heat transfer to a wafer within a system. By manipulating the gas pressure accordingly, the rate of heat transfer is controlled throughout the heating or cooling cycle.
摘要翻译：提供了增加衬底和散热器或源之间的传热总速率的方法，例如在负载锁中。根据各种实施例，所述方法包括改变装载锁或其它室中的传热气体的传热系数。改变传热系数以减少传热速率的时间依赖性变化。结果，整体传热速度得到改善。在某些实施方案中，所述方法包括改变室的气体压力以便影响系统内的晶片的热传递速率。通过相应地操纵气体压力，在整个加热或冷却循环期间控制传热速率。

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