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1. 发明授权

US06663472B2 Multiple step CMP polishing 失效
公开(公告)号：US06663472B2
公开(公告)日：2003-12-16
申请号：US10062656
申请日：2002-02-01
申请人： Victor Seng-Keong Lim , Chen Feng , Subramanian Balakumar , Paul Proctor
发明人： Victor Seng-Keong Lim , Chen Feng , Subramanian Balakumar , Paul Proctor
IPC分类号： B24B508
CPC分类号： B24B37/26 , B24B57/02
摘要： An improved chemical mechanical polishing apparatus for planarizing semiconductor surface materials. The single rotating polishing platen with an attached pad of conventional CMP processes is replaced with two controlled independently driven, concentric and coplanar, polishing platens. The two co-planar polishing platens allows for separate adjustable options to the CMP polishing process. The options are provided by having pads of different material compositions and hardness. Moreover, an annular space is provided between the platens to introduce the usage of two slurry formulations, one to each pad, on the same CMP tool. The annular space between platens forming a drain path for catching and containing slurry waste.

2. 发明授权

US06726545B2 Linear polishing for improving substrate uniformity 失效
标题翻译：线性抛光，提高基体均匀性
公开(公告)号：US06726545B2
公开(公告)日：2004-04-27
申请号：US10134821
申请日：2002-04-26
申请人： Subramanian Balakumar , Chen Feng , Victor Lim , Paul Proctor , Mukhopadhyay Madhusudan , Chivukula Subrahmanyam , Yelehanka Ramachandramurthy Pradeep
发明人： Subramanian Balakumar , Chen Feng , Victor Lim , Paul Proctor , Mukhopadhyay Madhusudan , Chivukula Subrahmanyam , Yelehanka Ramachandramurthy Pradeep
IPC分类号： B24B100
CPC分类号： B24B37/16 , B24B21/10 , B24B37/245
摘要： A linear polishing apparatus for polishing a semiconductor substrate including a novel polishing belt arrangement with at least two polishing belts forming a continuous loop. Each belt having an outside polishing surface and an inside smooth surface. The belts are spaced alongside each other sharing a common axis at each end. The belts are looped around a pair of rollers making up a driver roller at one end and a driven roller at the other end. A platen member interposes each belt and is placed between the pairs of rollers. The platen provides a polishing plane and supporting surface for the polishing belts. The polishing plane includes a plurality of holes communicating with an elongated plenum chamber underlying the plane. The chamber supplies a compressed gas to impart an upward pressure against the polishing belts. The driver rollers are coupled to separate motors to independently drive and control at least said two of the polishing belts.
摘要翻译：一种用于抛光包括具有形成连续环的至少两个抛光带的新型抛光带装置的半导体衬底的线性抛光装置。每个带具有外部抛光表面和内部光滑表面。皮带沿着彼此间隔开，在每一端共享公共轴线。皮带环绕一对辊组成一端的驱动辊和另一端的从动辊。压板构件插入每个带并且放置在成对的辊之间。压板提供抛光平面和抛光带的支撑表面。抛光平面包括与平面下方的细长的增压室连通的多个孔。该室供应压缩气体以向抛光带施加向上的压力。驱动辊连接到单独的马达以独立地驱动和控制至少所述两个抛光带。

3. 发明授权

US06403484B1 Method to achieve STI planarization 失效
标题翻译：实现STI平坦化的方法
公开(公告)号：US06403484B1
公开(公告)日：2002-06-11
申请号：US09803187
申请日：2001-03-12
申请人： Victor Seng Keong Lim , Lap Chan , James Lee , Chen Feng , Wang Ling Goh
发明人： Victor Seng Keong Lim , Lap Chan , James Lee , Chen Feng , Wang Ling Goh
IPC分类号： H01L2100
CPC分类号： H01L21/31056 , H01L21/31053 , H01L21/76229
摘要： A method of forming shallow trench isolations is described. A plurality of isolation trenches are etched through a first etch stop layer into the underlying semiconductor substrate. An oxide layer is deposited over the first etch stop layer and within the isolation trenches using a high density plasma chemical vapor deposition process (HDP-CVD) wherein after the oxide layer fills the isolation trenches, the deposition component is discontinued while continuing the sputtering component until corners of the first etch stop layer are exposed at edges of the isolation trenches whereby the oxide layer within the isolation trenches is disconnected from the oxide layer overlying the first etch stop layer. Thereafter, a second etch stop layer is deposited overlying the oxide layer within the isolation trenches, the oxide layer overlying the first etch stop layer, and the exposed first etch stop layer corners. The second etch stop layer is polished away until the oxide layer overlying the first etch stop layer is exposed. The exposed oxide layer overlying the first etch stop layer is removed. The first and second etch stop layers are removed to complete the planarized shallow trench isolation regions in the manufacture of an integrated circuit device.
摘要翻译：描述了形成浅沟槽隔离的方法。通过第一蚀刻停止层将多个隔离沟槽蚀刻到下面的半导体衬底中。使用高密度等离子体化学气相沉积工艺（HDP-CVD）在第一蚀刻停止层和隔离沟槽内沉积氧化物层，其中在氧化物层填充隔离沟槽之后，沉积组分被中断，同时继续溅射组分直到第一蚀刻停止层的角部暴露在隔离沟槽的边缘处，由此隔离沟槽内的氧化物层与覆盖在第一蚀刻停止层上的氧化物层断开。此后，沉积在隔离沟槽内的氧化物层上的第二蚀刻停止层，覆盖在第一蚀刻停止层上的氧化物层和暴露的第一蚀刻停止层拐角。将第二蚀刻停止层抛光，直到暴露出覆盖在第一蚀刻停止层上的氧化物层。去除覆盖在第一蚀刻停止层上的暴露的氧化物层。去除第一和第二蚀刻停止层以在集成电路器件的制造中完成平坦化的浅沟槽隔离区。

4. 发明申请

US20220327300A1 MULTI-FUNCTIONAL OPTICAL ILLUMINATORS 有权
公开(公告)号：US20220327300A1
公开(公告)日：2022-10-13
申请号：US17733502
申请日：2022-04-29
申请人： Chen Feng , Jie REN , Yunxin OUYANG
发明人： Chen Feng , Jie REN , Yunxin OUYANG
IPC分类号： G06K7/10
摘要： A single piece light pipe is designed to provide dual-field, multi-color, multi-directional illumination. The light pipe is combined with a single PCB having a plurality of LEDs to create a compact illuminator that can selectively provide dark field and bright field with red, green, blue color, broad spectrum, or combination of any color in horizontal, vertical, diagonal, or combination of any direction. The single piece light pipe is compact in size and light in weight. The non-closed form option not only can further reduce the weight but also can allow arrange opening area clearance for: (1) visual aiming and alignment in application, especially for hand held application; (2) reducing illumination crosstalk to unwanted directions; and for (3) mechanical integration. The improvements allow the illuminator to read direct product marking (DPM) type of barcodes.

5. 发明授权

US09466762B2 Base and method for making epitaxial structure using the same 有权
标题翻译：使用其外延结构的基底和方法
公开(公告)号：US09466762B2
公开(公告)日：2016-10-11
申请号：US13276251
申请日：2011-10-18
申请人： Yang Wei , Chen Feng , Shou-Shan Fan
发明人： Yang Wei , Chen Feng , Shou-Shan Fan
IPC分类号： C30B25/02 , H01L33/12 , H01L51/00 , B82Y30/00 , B82Y40/00 , C30B25/18 , C30B29/40 , H01L29/06 , H01L33/00
CPC分类号： H01L33/12 , B82Y30/00 , B82Y40/00 , C01B21/0632 , C01B32/168 , C30B25/02 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02422 , H01L21/02444 , H01L21/0245 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L21/67109 , H01L29/0673 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L51/0048 , H01L2924/0002 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/752 , Y10S977/755 , Y10S977/788 , Y10S977/789 , Y10S977/847 , Y10S977/887 , Y10S977/932 , Y10T428/24331 , H01L2924/00
摘要： A base for making an epitaxial structure is provided. The base includes a substrate and a carbon nanotube layer. The substrate has an epitaxial growth surface. The carbon nanotube layer is located on the epitaxial growth surface. The carbon nanotube layer defines a plurality of apertures to expose part of the epitaxial growth surface so that an epitaxial layer can grow from an exposed epitaxial growth surface and through the apertures. A method for making an epitaxial structure using the base is also provided.
摘要翻译：提供了制造外延结构的基底。基底包括基底和碳纳米管层。衬底具有外延生长表面。碳纳米管层位于外延生长表面上。碳纳米管层限定多个孔以暴露外延生长表面的一部分，使得外延层可以从暴露的外延生长表面并通过孔生长。还提供了使用该基底制造外延结构的方法。

6. 发明授权

US09433801B2 Pacemakers and pacemaker leads 有权
标题翻译：起搏器和起搏器导线
公开(公告)号：US09433801B2
公开(公告)日：2016-09-06
申请号：US13527792
申请日：2012-06-20
申请人： Li Qian , Chen Feng , Wen-Mei Zhao , Li Fan , Yu-Quan Wang , Liang Liu
发明人： Li Qian , Chen Feng , Wen-Mei Zhao , Li Fan , Yu-Quan Wang , Liang Liu
IPC分类号： A61N1/05 , A61N5/00 , A61N5/10 , H01B1/04 , B82Y5/00
CPC分类号： A61N5/1001 , A61N1/05 , A61N1/0529 , A61N1/056 , B82Y5/00 , H01B1/04
摘要： A pacemaker is provided. The pacemaker includes a pulse generator and an electrode line connecting with the pulse generator. The electrode line includes at least one conductor. The at least one conductor includes at least one carbon nanotube wire having a plurality of radioactive particles therein.
摘要翻译：提供起搏器。起搏器包括脉冲发生器和与脉冲发生器连接的电极线。电极线包括至少一个导体。所述至少一个导体包括至少一个其中具有多个放射性粒子的碳纳米管线。

7. 发明授权

US09370607B2 Nerve graft 有权
标题翻译：神经移植
公开(公告)号：US09370607B2
公开(公告)日：2016-06-21
申请号：US13349582
申请日：2012-01-13
申请人： Chen Feng , Li Fan , Wen-Mei Zhao
发明人： Chen Feng , Li Fan , Wen-Mei Zhao
IPC分类号： A61F2/02 , A61L27/38 , A61L27/42
CPC分类号： A61L27/383 , A61L27/422 , A61L2400/12 , A61L2430/32
摘要： A nerve graft includes a carbon nanotube structure, a hydrophilic layer, and a nerve network. The hydrophilic layer having a polar surface is located on a surface of the carbon nanotube structure. The nerve network positioned on the polar surface of the hydrophilic layer includes a number of neurons connecting with each other. The nerve network has a polarity. The polar surface of the hydrophilic layer has a polarity attracted to the polarity of the nerve network.
摘要翻译：神经移植物包括碳纳米管结构，亲水层和神经网络。具有极性表面的亲水层位于碳纳米管结构的表面上。位于亲水层的极性表面上的神经网络包括彼此连接的多个神经元。神经网络具有极性。亲水层的极性表面具有吸引到神经网络极性的极性。

8. 发明授权

US09334474B2 Method for manufacturing culture medium comprising carbon nanotubes and growing cells thereon 有权
标题翻译：用于制造包含碳纳米管和生长细胞的培养基的方法
公开(公告)号：US09334474B2
公开(公告)日：2016-05-10
申请号：US13450648
申请日：2012-04-19
申请人： Li Fan , Chen Feng , Wen-Mei Zhao
发明人： Li Fan , Chen Feng , Wen-Mei Zhao
IPC分类号： C12N5/071 , C12N5/00 , B82Y5/00
CPC分类号： C12N5/0068 , B82Y5/00 , C12N2533/10
摘要： A culture medium for growing at least one kind of cells is provided. The culture medium includes a carbon nanotube structure and a cell adhesion layer. The cell adhesion layer covers one surface of the carbon nanotube structure. The at least one kind of cells grows on the cell adhesion layer. In addition, a method for manufacturing a culture medium for growing at least one kind of cells is also provided.
摘要翻译：提供了用于生长至少一种细胞的培养基。培养基包括碳纳米管结构和细胞粘附层。细胞粘附层覆盖碳纳米管结构的一个表面。至少一种细胞在细胞粘附层上生长。此外，还提供了用于生长至少一种细胞的培养基的制造方法。

9. 发明授权

US09295759B2 Nerve graft 有权
标题翻译：神经移植
公开(公告)号：US09295759B2
公开(公告)日：2016-03-29
申请号：US12981573
申请日：2010-12-30
申请人： Li Fan , Chen Feng , Wen-Mei Zhao
发明人： Li Fan , Chen Feng , Wen-Mei Zhao
IPC分类号： A61F2/02 , A61L27/36 , A61L27/34
CPC分类号： A61L27/3675 , A61L27/34 , A61L2400/12 , A61L2430/32
摘要： A nerve graft includes a carbon nanotube film structure, a protein layer, and a nerve network. The protein layer is located on a surface of the carbon nanotube film structure. The nerve network is positioned on a surface of the protein layer and far away from the carbon nanotube film structure.
摘要翻译：神经移植物包括碳纳米管膜结构，蛋白质层和神经网络。蛋白质层位于碳纳米管膜结构的表面上。神经网络位于蛋白质层的表面并且远离碳纳米管膜结构。

10. 发明授权

US08958153B2 Optical polarizer 有权
标题翻译：光学偏振片
公开(公告)号：US08958153B2
公开(公告)日：2015-02-17
申请号：US12657912
申请日：2010-01-28
申请人： Chen Feng , Kai-Li Jiang , Shou-Shan Fan
发明人： Chen Feng , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： G02B5/30 , B82Y20/00
CPC分类号： G02B5/3033 , B82Y20/00 , G02B2207/101 , Y10S977/742 , Y10S977/745 , Y10S977/81 , Y10S977/834
摘要： An optical polarizer includes a supporting element and an optical polarizing film supported by the supporting element. The optical polarizing film includes a carbon nanotube film structure and a metallic layer disposed on the carbon nanotube film structure.
摘要翻译：光学偏振器包括支撑元件和由支撑元件支撑的光学偏振膜。光学偏振膜包括碳纳米管膜结构和设置在碳纳米管膜结构上的金属层。

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