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    • 3. 发明申请
    • SOLAR CELL
    • 太阳能电池
    • US20100059114A1
    • 2010-03-11
    • US12519027
    • 2007-07-10
    • Hyunjung ParkSung-jin KimJin-ho Kim
    • Hyunjung ParkSung-jin KimJin-ho Kim
    • H01L31/00
    • H01L31/02167G02B1/113H01L31/02168H01L31/022425H01L31/068H01L31/1868Y02E10/547Y02P70/521
    • A solar cell includes a p-n structure having a first conductive semiconductor substrate, a second conductive semiconductor layer formed on the first conductive semiconductor substrate and having a conduction opposite to the first conductive semiconductor substrate, and a p-n junction formed at an interface between the first conductive semiconductor substrate and the second conductive semiconductor layer; a passivated layer formed on the second conductive semiconductor layer and composed of silicon oxynitride with a refractive index of 1.45 to 1.70; an anti-reflection film formed on the passivated layer and composed of silicon nitride; a front electrode connected to the second conductive semiconductor layer with passing through a part of the passivated layer and the anti-reflection film and exposed outward; and a rear electrode formed at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween to be connected to the first conductive semiconductor substrate.
    • 太阳能电池包括具有第一导电半导体衬底的pn结构,形成在第一导电半导体衬底上并且具有与第一导电半导体衬底相反的导电的第二导电半导体层,以及形成在第一导电半导体衬底之间的界面处的pn结 半导体衬底和第二导电半导体层; 形成在第二导电半导体层上并由折射率为1.45至1.70的氧氮化硅组成的钝化层; 形成在钝化层上并由氮化硅构成的抗反射膜; 连接到第二导电半导体层的前电极,其通过钝化层的一部分和防反射膜向外露出; 以及形成在与前电极相反一侧的后电极,其间插入有第一导电半导体衬底以连接到第一导电半导体衬底。
    • 10. 发明申请
    • IMAGE SENSOR
    • 图像传感器
    • US20120104465A1
    • 2012-05-03
    • US13242181
    • 2011-09-23
    • Jin-ho KimChang-rok Moon
    • Jin-ho KimChang-rok Moon
    • H01L27/148
    • H01L27/14641H01L27/14603H01L27/14636H01L27/14638H01L27/1464H01L27/14687
    • An image sensor including: a substrate that includes a first surface onto which light is irradiated, a second surface opposite to the first surface, and a light receiving device disposed adjacent to the second surface; a transistor that includes a source region, a drain region, and a gate electrode disposed between the source region and the drain region, wherein the transistor is disposed on the second surface of the substrate; a wiring line that is disposed on the second surface of the substrate; and a plurality of contact plugs that are disposed on the source region, the drain region, or the gate electrode, wherein at least one of the plurality of contact plugs is connected to the wiring line.
    • 一种图像传感器,包括:基板,其包括照射光的第一表面,与所述第一表面相对的第二表面;以及邻近所述第二表面设置的光接收装置; 晶体管,其包括源极区域,漏极区域和设置在所述源极区域和所述漏极区域之间的栅电极,其中所述晶体管设置在所述衬底的所述第二表面上; 布置在所述基板的第二表面上的布线; 以及设置在所述源极区域,所述漏极区域或所述栅极电极上的多个接触插塞,其中,所述多个接触插塞中的至少一个连接到所述布线。