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1. 发明授权

US09627184B2 Cleaning method of processing apparatus, program for performing the method, and storage medium for storing the program 有权
公开(公告)号：US09627184B2
公开(公告)日：2017-04-18
申请号：US12960064
申请日：2010-12-03
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
IPC分类号： B08B7/00 , H01J37/32
CPC分类号： H01J37/32862 , H01J37/3244 , H01J37/32449
摘要： A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A1 (=Q1×m1) of the flow rate Q1 and the molecular weight m1 of the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.

2. 发明授权

US07780786B2 Internal member of a plasma processing vessel 有权
标题翻译：等离子体处理容器的内部构件
公开(公告)号：US07780786B2
公开(公告)日：2010-08-24
申请号：US10722602
申请日：2003-11-28
申请人： Kouji Mitsuhashi , Hiroyuki Nakayama , Nobuyuki Nagayama , Tsuyoshi Moriya , Hiroshi Nagaike
发明人： Kouji Mitsuhashi , Hiroyuki Nakayama , Nobuyuki Nagayama , Tsuyoshi Moriya , Hiroshi Nagaike
IPC分类号： C23C16/00 , H05H1/26
CPC分类号： H05H1/24 , C23C16/4404 , H01J37/32477 , Y10T428/249969 , Y10T428/24997 , Y10T428/31544 , Y10T428/31663 , Y10T428/31721
摘要： An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.
摘要翻译：等离子体处理容器的内部构件包括基材和通过在基材的表面上热喷涂陶瓷而形成的膜。该膜由包括选自B，Mg，Al，Si，Ca，Cr，Y，Zr，Ta，Ce和Nd中的至少一种元素的陶瓷形成。此外，膜的至少一部分被树脂密封。

3. 发明申请

US20060210469A1 Method for removing water molecules from vacuum chamber, program for executing the method, and storage medium storing the program 有权
公开(公告)号：US20060210469A1
公开(公告)日：2006-09-21
申请号：US11376162
申请日：2006-03-16
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
IPC分类号： C01B7/01 , C01B7/19 , C01B3/02
CPC分类号： C01B3/12 , C01B7/191 , C01B7/20 , C07C17/23
摘要： A method for removing water molecules from a vacuum chamber for carrying out a process on a target object in vacuum includes the steps of introducing into the vacuum chamber a water molecule removal gas including at least a reduction gas which reduces the water molecules to produce hydrogen molecules and a halogen-based gas which reacts with the produced hydrogen molecules to produce acid, exhausting gases in the vacuum chamber measuring an amount of water molecules present inside the vacuum chamber, and determining whether or not the measured amount of water molecules is greater than or equal to a threshold value, wherein if the measured amount of water molecules is greater than or equal to the threshold value, the water molecule removal gas is introduced into the vacuum chamber in the introducing step.

4. 发明授权

US08172949B2 Substrate processing apparatus, program for performing operation and control method thereof, and computer readable storage medium storing the program 有权
标题翻译：衬底处理装置，用于执行其操作和控制方法的程序以及存储程序的计算机可读存储介质
公开(公告)号：US08172949B2
公开(公告)日：2012-05-08
申请号：US12718699
申请日：2010-03-05
申请人： Tomoyuki Kudo , Jun Ozawa , Hiroshi Nakamura , Kazunori Kazama , Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
发明人： Tomoyuki Kudo , Jun Ozawa , Hiroshi Nakamura , Kazunori Kazama , Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
IPC分类号： C23C16/00 , C23F1/00 , B65G21/677 , H01L21/306
CPC分类号： H01L21/67201 , H01L21/67017 , H01L21/67253 , H01L21/67748 , Y10S414/135 , Y10S414/139
摘要： A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.
摘要翻译：提供一种存储用于执行基板处理装置的操作方法的程序的计算机可读存储介质。操作方法包括以下步骤：在基板在真空处理单元的真空处理室和转印单元的真空准备室之间转移时，在闸阀打开之前将非反应性气体引入真空准备室中，当内部真空制备室的压力与大气压力相同，开始真空制备室中的腐蚀性气体的抽空处理，然后通过使真空制备室与大气连通而进入大气，并在该真空制备室之后打开闸阀向大气开放的一步。

5. 发明授权

US07560083B2 Method for removing water molecules from vacuum chamber, program for executing the method, and storage medium storing the program 有权
标题翻译：用于从真空室除去水分子的方法，用于执行该方法的程序和存储该程序的存储介质
公开(公告)号：US07560083B2
公开(公告)日：2009-07-14
申请号：US11376162
申请日：2006-03-16
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
IPC分类号： C01B7/01 , C01B3/02 , C01B7/19 , H01L21/3065
CPC分类号： C01B3/12 , C01B7/191 , C01B7/20 , C07C17/23
摘要： A method for removing water molecules from a vacuum chamber for carrying out a process on a target object in vacuum includes the steps of introducing into the vacuum chamber a water molecule removal gas including at least a reduction gas which reduces the water molecules to produce hydrogen molecules and a halogen-based gas which reacts with the produced hydrogen molecules to produce acid, exhausting gases in the vacuum chamber measuring an amount of water molecules present inside the vacuum chamber, and determining whether or not the measured amount of water molecules is greater than or equal to a threshold value, wherein if the measured amount of water molecules is greater than or equal to the threshold value, the water molecule removal gas is introduced into the vacuum chamber in the introducing step.
摘要翻译：从真空室除去水分子的方法，用于在真空中进行目标物体的处理，包括以下步骤：向真空室中引入至少包含还原气体的水分子去除气体，所述还原气体减少水分子以产生氢分子和与所产生的氢分子反应产生酸的卤素气体，在真空室中排出气体，测量真空室内存在的水分子的量，并测定测量的水分子量是否大于或等于等于阈值，其中如果测量的水分子量大于或等于阈值，则在引入步骤中将水分子去除气体引入真空室。

6. 发明申请

US20080245389A1 METHOD FOR CLEANING ELEMENTS IN VACUUM CHAMBER AND APPARATUS FOR PROCESSING SUBSTRATES 审中-公开
标题翻译：真空室清洁元件的方法及加工基板的设备
公开(公告)号：US20080245389A1
公开(公告)日：2008-10-09
申请号：US12131818
申请日：2008-06-02
申请人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
发明人： Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
IPC分类号： B08B7/04
CPC分类号： H01L21/67028 , B08B3/12 , H01J37/32862 , H01L21/6831
摘要： To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.
摘要翻译：为了通过使颗粒粘附到元件上来清洁真空室中的元件散射，本发明使用了一种用于向元件施加电压并且通过利用麦克斯韦应力使颗粒散射的装置，用于对颗粒进行充电的装置和通过利用库仑力使颗粒散射，用于将气体引入真空室中并通过使气体冲击波撞击元件而使颗粒粘附到元件上的装置，用于加热元件并引起通过利用热应力和热压力来散射的颗粒，或通过对元件施加机械振动来使颗粒散射的装置。通过在相对高压气氛中的气流中携带它们来除去如此散落的颗粒。

7. 发明申请

US20120247502A1 METHOD FOR CLEANING ELEMENTS IN VACUUM CHAMBER AND APPARATUS FOR PROCESSING SUBSTRATES 有权
标题翻译：真空室清洁元件的方法及加工基板的设备
公开(公告)号：US20120247502A1
公开(公告)日：2012-10-04
申请号：US13495404
申请日：2012-06-13
申请人： Tsuyoshi MORIYA , Hiroshi Nagaike , Hiroyuki Nakayama
发明人： Tsuyoshi MORIYA , Hiroshi Nagaike , Hiroyuki Nakayama
IPC分类号： B08B7/04
CPC分类号： H01L21/67028 , B08B3/12 , H01J37/32862 , H01L21/6831
摘要： To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.
摘要翻译：为了通过使颗粒粘附到元件上来清洁真空室中的元件散射，本发明使用了一种用于向元件施加电压并且通过利用麦克斯韦应力使颗粒散射的装置，用于对颗粒进行充电的装置和通过利用库仑力使颗粒散射，用于将气体引入真空室中并通过使气体冲击波撞击元件而使颗粒粘附到元件上的装置，用于加热元件并引起通过利用热应力和热压力来散射的颗粒，或通过对元件施加机械振动来使颗粒散射的装置。通过在相对高压气氛中的气流中携带它们来除去如此散落的颗粒。

8. 发明申请

US20100307687A1 INTERNAL MEMBER OF A PLASMA PROCESSING VESSEL 有权
标题翻译：等离子体处理船的内部成员
公开(公告)号：US20100307687A1
公开(公告)日：2010-12-09
申请号：US12838096
申请日：2010-07-16
申请人： Kouji MITSUHASHI , Hiroyuki Nakayama , Nobuyuki Nagayama , Tsuyoshi Moriya , Hiroshi Nagaike
发明人： Kouji MITSUHASHI , Hiroyuki Nakayama , Nobuyuki Nagayama , Tsuyoshi Moriya , Hiroshi Nagaike
IPC分类号： C23F1/08 , C23C4/06
CPC分类号： H05H1/24 , C23C16/4404 , H01J37/32477 , Y10T428/249969 , Y10T428/24997 , Y10T428/31544 , Y10T428/31663 , Y10T428/31721
摘要： An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.
摘要翻译：等离子体处理容器的内部部件包括基材和通过在基材的表面上热喷涂陶瓷而形成的膜。该膜由包括选自B，Mg，Al，Si，Ca，Cr，Y，Zr，Ta，Ce和Nd中的至少一种元素的陶瓷形成。此外，膜的至少一部分被树脂密封。

9. 发明申请

US20060162742A1 Cleaning method of processing apparatus, program for performing the method, and storage medium for storing the program 审中-公开
标题翻译：处理装置的清洁方法，用于执行该方法的程序和用于存储程序的存储介质
公开(公告)号：US20060162742A1
公开(公告)日：2006-07-27
申请号：US11338778
申请日：2006-01-25
申请人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
发明人： Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
IPC分类号： B08B6/00 , B08B9/00
CPC分类号： H01J37/32862
摘要： A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A1 (=Q1×m1) of the flow rate Q1 and the molecular weight m1 of the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.
摘要翻译：等离子体处理装置包括其中晶片W被等离子体处理的处理室和控制每个部件的操作的CPU。处理气体在由处理气体的流速和分子量限定的第一条件下，特别地基于产物A 1的大小（= Q 1）被引入处理室中，处理气体的流速Q 1 1和分子量m 1 N 2的表面和/或晶片W被物理或化学蚀刻。然后，可以在处理气体中相同或不同的预净化气体在从第一条件导出的第二条件下通过喷淋头引入处理室。

10. 发明申请

US20060105548A1 Substrate processing apparatus, program for performing operation and control method thereof, and computer readable storage medium storing the program 有权
标题翻译：衬底处理装置，用于执行其操作和控制方法的程序以及存储程序的计算机可读存储介质
公开(公告)号：US20060105548A1
公开(公告)日：2006-05-18
申请号：US11254668
申请日：2005-10-21
申请人： Tomoyuki Kudo , Jun Ozawa , Hiroshi Nakamura , Kazunori Kazama , Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
发明人： Tomoyuki Kudo , Jun Ozawa , Hiroshi Nakamura , Kazunori Kazama , Tsuyoshi Moriya , Hiroyuki Nakayama , Hiroshi Nagaike
IPC分类号： H01L21/322
CPC分类号： H01L21/67201 , H01L21/67017 , H01L21/67253 , H01L21/67748 , Y10S414/135 , Y10S414/139
摘要： A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.
摘要翻译：提供一种存储用于执行基板处理装置的操作方法的程序的计算机可读存储介质。操作方法包括以下步骤：在基板在真空处理单元的真空处理室和转印单元的真空准备室之间转移时，在闸阀打开之前将非反应性气体引入真空准备室中，当内部真空制备室的压力与大气压力相同，开始真空制备室中的腐蚀性气体的抽空处理，然后通过使真空制备室与大气连通而进入大气，并在真空准备室之后打开闸阀向大气开放的一步。

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