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    • 3. 发明授权
    • Silicon substrate apparatus and method of manufacturing the silicon substrate apparatus
    • 硅基板装置及其制造方法
    • US07081370B2
    • 2006-07-25
    • US10492360
    • 2002-09-04
    • Munehito KumagaiYukihisa YoshidaTsukasa MatsuuraYukihiro Honma
    • Munehito KumagaiYukihisa YoshidaTsukasa MatsuuraYukihiro Honma
    • H01L21/00
    • H03D9/0616
    • A first rectangular groove having a rectangular cross section and a second rectangular groove substantially orthogonal to the first rectangular groove and having a rectangular cross section are formed in a first silicon substrate. A third rectangular groove located at a position facing the first rectangular groove and having a rectangular cross section is formed on a second silicon substrate. A device substrate including a frequency conversion device is provided in the second rectangular groove, so that the frequency conversion device is located where the first and second rectangular grooves are orthogonal to each other. Further, the first silicon substrate on which the device substrate is located is bonded to the second silicon substrate, so that the first rectangular groove opposes the third rectangular groove, forming a rectangular waveguide which includes the first rectangular groove and the third rectangular groove, and in which a received high frequency signal propagates and is incident on the frequency conversion device.
    • 在第一硅衬底中形成具有矩形截面的第一矩形槽和与第一矩形槽基本正交并且具有矩形横截面的第二矩形槽。 在第二硅衬底上形成位于面对第一矩形槽并且具有矩形横截面的位置处的第三矩形槽。 包括变频装置的装置基板设置在第二矩形槽中,使得变频装置位于第一和第二矩形槽彼此正交的位置。 此外,器件基板所在的第一硅基板与第二硅基板接合,使得第一矩形槽与第三矩形槽相对,形成包括第一矩形槽和第三矩形槽的矩形波导,以及 其中接收的高频信号传播并入射在变频装置上。
    • 4. 发明申请
    • Silicon substrate device and its manufacturing method
    • 硅衬底器件及其制造方法
    • US20050009226A1
    • 2005-01-13
    • US10492360
    • 2002-09-04
    • Munehito KumagaiYukihisa YoshidaTsukasa MatsuuraYukihiro Honma
    • Munehito KumagaiYukihisa YoshidaTsukasa MatsuuraYukihiro Honma
    • H03D9/06H01L21/00H01L33/00
    • H03D9/0616
    • A first narrow rectangular groove having a rectangular cross section and a second narrow rectangular groove substantially orthogonal to the first narrow rectangular groove and having a rectangular cross section are formed in a first silicon substrate. A third narrow rectangular groove located at a position facing the first narrow rectangular groove and having a rectangular cross section is formed on a second silicon substrate. A device substrate including a frequency conversion device is provided in the second narrow rectangular groove, so that the frequency conversion device is located where the first and second narrow rectangular grooves are orthogonal to each other. Further, the first silicon substrate on which the device substrate is located is bonded to the second silicon substrate, so that the first narrow rectangular groove opposes the third narrow rectangular groove, forming a rectangular waveguide which includes the first narrow rectangular groove and the third narrow rectangular groove, and in which a received high frequency signal propagates and is incident on the frequency conversion device.
    • 在第一硅衬底中形成具有矩形横截面的第一窄矩形槽和与第一窄矩形槽基本正交并具有矩形横截面的第二窄矩形槽。 在第二硅衬底上形成位于面对第一窄矩形槽并且具有矩形横截面的位置的第三窄矩形槽。 包括频率转换装置的装置基板设置在第二窄矩形槽中,使得变频装置位于第一和第二窄矩形槽彼此正交的位置。 此外,器件基板所在的第一硅基板与第二硅基板接合,使得第一窄矩形槽与第三窄矩形槽相对,形成包括第一窄矩形槽和第三窄矩形槽的矩形波导 矩形槽,并且其中接收的高频信号传播并入射在变频装置上。
    • 5. 发明授权
    • Microdevice and its production method
    • 微设备及其生产方法
    • US06528724B1
    • 2003-03-04
    • US09889424
    • 2001-10-19
    • Yukihisa YoshidaMartial ChablozJiwei JiaoTsukasa MatsuuraKazuhiko Tsutsumi
    • Yukihisa YoshidaMartial ChablozJiwei JiaoTsukasa MatsuuraKazuhiko Tsutsumi
    • H01L2302
    • G01P15/125B81B2201/0228B81B2203/0136B81C1/0015B81C1/00579G01P1/023G01P15/0802G01P2015/0814Y10T29/49002Y10T29/49117
    • A micro device including an insulating substrate having a recess formed on a surface, and a beam-like silicon structure on the front surface of the insulating substrate surrounding the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The micro device also has an electrically conductive film electrically connected to the supporting section, on the surface of the recess at least directly under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus, an etching gas having a positive charge is not subjected to electrical repulsion from the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in shape and dimensions, the micro device has improved reliability and an improved degree of freedom in design.
    • 一种微型器件,包括具有形成在表面上的凹部的绝缘基板和围绕凹部的绝缘基板的前表面上的梁状硅结构。 梁状结构包括至少一个功能部分,并且功能部分具有结合到绝缘基板的支撑部分和与支撑部分一体并延伸穿过凹部的至少一个悬臂。 微型装置还具有导电膜,该导电膜电连接到支撑部分,至少在悬臂下方的凹部的表面上。 在干蚀刻工艺中,导电膜防止凹部的表面带正电。 因此,具有正电荷的蚀刻气体不会受到来自凹部的电斥力,并且不会撞击到硅衬底的背面,因此不会发生悬臂的侵蚀。 结果,由于在形状和尺寸方面形成了高度精确的束状结构,所以微型器件具有提高的可靠性和改进的设计自由度。