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1. 发明授权

US5315468A Magnetoresistive sensor having antiferromagnetic layer for exchange bias 失效
标题翻译：具有用于交换偏置的反铁磁层的磁阻传感器
公开(公告)号：US5315468A
公开(公告)日：1994-05-24
申请号：US920943
申请日：1992-07-28
申请人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
发明人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
摘要翻译：描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。向Ni-Mn合金中添加铬提高了耐腐蚀性。

2. 发明授权

US5436778A Magnetoresistive sensor having antiferromagnetic exchange bias 失效
标题翻译：具有反铁磁交换偏置的磁阻传感器
公开(公告)号：US5436778A
公开(公告)日：1995-07-25
申请号：US213882
申请日：1994-03-15
申请人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
发明人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetic disk storage system wherein a magnetic includes a magnetoresistive sensor is described. The MR sensor comprises a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer has a face-centered-cubic crystalline structure and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer crystalline structure is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
摘要翻译：描述了一种磁盘存储系统，其中磁换能器包括磁阻传感器。 MR传感器包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。最初沉积时，Ni-Mn层具有面心立方晶体结构，并且表现出很少或没有交换耦合场。在相对较低温度下的一个退火循环之后，Ni-Mn层晶体结构是面心四面体并且显示出增加的晶体顺序，并且为MR元件提供足够的交换耦合以进行操作。向Ni-Mn合金中添加铬提高了耐腐蚀性。

3. 发明授权

US5380548A Method for fabricating a magnetoresistive sensor having antiferromagnetic layer 失效
标题翻译：制造具有反铁磁层的磁阻传感器的方法
公开(公告)号：US5380548A
公开(公告)日：1995-01-10
申请号：US213883
申请日：1994-03-15
申请人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
发明人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
IPC分类号： G11B5/39 , H01F10/02
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
摘要翻译：描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。向Ni-Mn合金中添加铬提高了耐腐蚀性。

4. 发明授权

US5614727A Thin film diode having large current capability with low turn-on voltages for integrated devices 失效
标题翻译：具有大电流能力的薄膜二极管，集成器件的低导通电压
公开(公告)号：US5614727A
公开(公告)日：1997-03-25
申请号：US473036
申请日：1995-06-06
申请人： Daniele Mauri , Wen Y. Lee , Cherngye Hwang , Glen Garfunkel
发明人： Daniele Mauri , Wen Y. Lee , Cherngye Hwang , Glen Garfunkel
IPC分类号： H01L29/24 , H01L29/267 , H01L29/45 , H01L29/861 , H01L29/12
CPC分类号： H01L29/45 , H01L29/242 , H01L29/267 , H01L29/861
摘要： A thin film diode and method of fabrication having large current capability and low-turn on voltage is provided as a switching or protective device against electrostatic discharge in integrated devices such as magnetoresistive sensors and the like. A first semiconductor thin film layer of NiO.sub.x having p type properties is disposed on an arbitrary substrate, such as alumina, glass, silicon dioxide, silicon and the like. A second semiconducting layer of tin oxide or indium oxide or other transparent oxide is joined to the first layer to form a p/n junction. In one method of fabrication, the p/n junction is formed in a sputtering process under a partial oxygen pressure to control the stoichiometry of the films. Gold and Gold Indium contacts are attached to the films to provide electrical contacts. The device is enclosed in a protective coating and connected in parallel with an electronic device subject to electrostatic discharge.
摘要翻译：提供具有大电流能力和低匝导通电压的薄膜二极管和制造方法作为抵抗静电放电的开关或保护装置，诸如磁阻传感器等集成器件。具有p型性质的NiOx的第一半导体薄膜层设置在任意的基板上，例如氧化铝，玻璃，二氧化硅，硅等。氧化锡或氧化铟或其它透明氧化物的第二半导电层被接合到第一层以形成p / n结。在一种制造方法中，在部分氧气压力下以溅射工艺形成p / n结，以控制膜的化学计量。金和铟铟触点连接到电影以提供电触点。该装置封装在保护涂层中，并与静电放电的电子设备并联连接。

5. 发明授权

US5268806A Magnetoresistive transducer having tantalum lead conductors 失效
标题翻译：具有钽引线导体的磁阻换能器
公开(公告)号：US5268806A
公开(公告)日：1993-12-07
申请号：US823522
申请日：1992-01-21
申请人： Wolfgang M. Goubau , James K. Howard , Hung-Chang W. Huang , Cherngye Hwang , Robert O. Schwenker , James C. Uy
发明人： Wolfgang M. Goubau , James K. Howard , Hung-Chang W. Huang , Cherngye Hwang , Robert O. Schwenker , James C. Uy
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903
摘要： A magnetoresistive (MR) sensor having electrically conductive lead structures which are in electrical contact with the MR element at spaced positions. The lead structures comprise a thin film layer of body-centered-cubic tantalum which is separated from the MR element by a thin film seed layer formed of a material taken from the group consisting of TiW, TaW, Cr and W.
摘要翻译：具有导电引线结构的磁阻（MR）传感器，其在间隔位置处与MR元件电接触。引线结构包括通过由从TiW，TaW，Cr和W组成的组中取出的材料形成的薄膜种子层与MR元件分离的体心立方体钽的薄膜层。

6. 发明授权

US5258884A Magnetoresistive read transducer containing a titanium and tungsten alloy spacer layer 失效
标题翻译：含有钛和钨合金间隔层的磁阻读取传感器
公开(公告)号：US5258884A
公开(公告)日：1993-11-02
申请号：US779419
申请日：1991-10-17
申请人： James K. Howard , Cherngye Hwang
发明人： James K. Howard , Cherngye Hwang
IPC分类号： G11B5/39
CPC分类号： G11B5/399
摘要： A magnetoresistive (MR) read transducer has a thin film MR layer of ferromagnetic material and a nonmagnetic spacer layer in contact with the MR layer. The thin film spacer layer comprises an alloy of titanium (Ti) and tungsten (W) having a high resistivity. A thin film of soft magnetic material is deposited in contact with the nonmagnetic spacer layer so that the soft magnetic material is positioned parallel to, but spaced from, the MR layer. A feature of the invention is that the resistivity of the nonmagnetic spacer layer can be a specific value selected from a broad range of resistivity values by selecting the thickness, the Ti content, and/or the nitrogen content of the nonmagnetic spacer layer.
摘要翻译：磁阻（MR）读取传感器具有铁磁材料的薄膜MR层和与MR层接触的非磁性间隔层。薄膜间隔层包括具有高电阻率的钛（Ti）和钨（W）的合金。沉积与非磁性间隔层接触的软磁性材料的薄膜，使得软磁性材料平行于MR层定位。本发明的特征在于，通过选择非磁性间隔层的厚度，Ti含量和/或氮含量，非磁性间隔层的电阻率可以是从广泛的电阻率值中选择的特定值。

7. 发明授权

US4914538A Magnetoresistive read transducer 失效
标题翻译：磁阻读取传感器
公开(公告)号：US4914538A
公开(公告)日：1990-04-03
申请号：US234250
申请日：1988-08-18
申请人： James K. Howard , Hung-Chang W. Huang , Cherngye Hwang
发明人： James K. Howard , Hung-Chang W. Huang , Cherngye Hwang
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： G11B5/3903
摘要： A magnetoresistive sensor having spaced electrically conductive lead structures comprising a thin film of tungsten having a thin film overlayer, or, alternatively a thin film underlayer and a thin film overlayer, with both the thin film underlayer and the thin film overlayer formed of a material taken from the groups consisting of Ti, Ta, Cr, Zr, Hf, and TiW.

8. 发明授权

US5436047A Thin film magnetic recording disk comprising a metallic disk blank, a substantially non-magnetic Ni-Cr-O film having a textured surface and a magnetic film 失效
标题翻译：薄膜磁记录盘包括金属盘坯，具有纹理表面的基本上非磁性的Ni-Cr-O膜和磁膜
公开(公告)号：US5436047A
公开(公告)日：1995-07-25
申请号：US138934
申请日：1993-10-15
申请人： James K. Howard , Hung-Chang W. Huang , Cherngye Hwang , Anthony W. Wu
发明人： James K. Howard , Hung-Chang W. Huang , Cherngye Hwang , Anthony W. Wu
IPC分类号： G11B5/66 , G11B5/64 , G11B5/73 , G11B5/738 , G11B5/84 , G11B5/85 , G11B5/851 , G11B5/00
CPC分类号： G11B5/7325 , G11B5/8404 , Y10S428/90 , Y10S428/938 , Y10T428/24355 , Y10T428/265
摘要： A magnetic recording disk has an improved surface film formed on the disk blank. A sputter-deposited surface coating containing nickel, chromium and oxygen (Ni--Cr--O) is formed on a AlMg disk blank, after which a cobalt alloy magnetic layer is formed over the Ni--Cr--O coating and a protective overcoat is formed over magnetic layer. The use of the Ni--Cr--O coating on the disk blank eliminates the need for a wet electroless deposition process for creation of a surface coating and results in an inherent texturing of the subsequently deposited magnetic film and protective overcoat which conform to the surface texture of the sputter-deposited Ni--Cr--O. The disks made with the Ni--Cr--O surface film exhibit a very low static friction force between the air-bearing slider and the disk surface when the disks are used in contact start/stop (CSS) disk files.
摘要翻译：磁记录盘具有形成在盘坯上的改进的表面膜。在AlMg盘坯上形成包含镍，铬和氧（Ni-Cr-O）的溅射沉积表面涂层，之后在Ni-Cr-O涂层上形成钴合金磁性层，形成保护外涂层磁性层。在盘坯上使用Ni-Cr-O涂层消除了对用于产生表面涂层的湿式无电沉积工艺的需要，并导致随后沉积的磁性膜和保护性外涂层的固有纹理，其符合表面纹理的溅射沉积的Ni-Cr-O。使用Ni-Cr-O表面薄膜制成的圆盘，当磁盘用于触点启动/停止（CSS）磁盘文件时，在空气滑动滑块和磁盘表面之间显示非常低的静摩擦力。

9. 发明授权

US09349395B2 System and method for differential etching 有权
标题翻译：差分蚀刻的系统和方法
公开(公告)号：US09349395B2
公开(公告)日：2016-05-24
申请号：US13601739
申请日：2012-08-31
申请人： Robert G. Biskeborn , Calvin S. Lo , Cherngye Hwang , Andrew C. Ting
发明人： Robert G. Biskeborn , Calvin S. Lo , Cherngye Hwang , Andrew C. Ting
IPC分类号： G11B5/31 , H01J37/32
CPC分类号： H01J37/32825 , G11B5/3163 , H01J37/32816 , H01J37/3411 , H01J2237/334
摘要： A method according to one embodiment includes placing a substrate in a chamber; and plasma sputtering the substrate in a presence of a non-zero pressure of a vapor, wherein the vapor at the non-zero pressure is effective to diminish an etch rate of a first material of the substrate. A plasma sputtering apparatus according to one embodiment includes a chamber; a reservoir in the chamber for releasing a vapor at an established rate; a mount for a substrate; and a plasma source.
摘要翻译：根据一个实施例的方法包括将衬底放置在腔室中; 以及在非零压力蒸汽的存在下等离子体溅射所述衬底，其中所述非零压力下的蒸气有效地降低所述衬底的第一材料的蚀刻速率。根据一个实施例的等离子体溅射装置包括室; 用于以确定的速率释放蒸气的室中的储存器; 用于衬底的安装件; 和等离子体源。

10. 发明申请

US20140061033A1 SYSTEM AND METHOD FOR DIFFERENTIAL ETCHING 有权
标题翻译：用于差异蚀刻的系统和方法
公开(公告)号：US20140061033A1
公开(公告)日：2014-03-06
申请号：US13601739
申请日：2012-08-31
申请人： Robert G. Biskeborn , Calvin S. Lo , Cherngye Hwang , Andrew C. Ting
发明人： Robert G. Biskeborn , Calvin S. Lo , Cherngye Hwang , Andrew C. Ting
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/32825 , G11B5/3163 , H01J37/32816 , H01J37/3411 , H01J2237/334
摘要： A method according to one embodiment includes placing a substrate in a chamber; and plasma sputtering the substrate in a presence of a non-zero pressure of a vapor, wherein the vapor at the non-zero pressure is effective to diminish an etch rate of a first material of the substrate. A plasma sputtering apparatus according to one embodiment includes a chamber; a reservoir in the chamber for releasing a vapor at an established rate; a mount for a substrate; and a plasma source.
摘要翻译：根据一个实施例的方法包括将衬底放置在腔室中; 以及在非零压力蒸汽的存在下等离子体溅射所述衬底，其中所述非零压力下的蒸气有效地降低所述衬底的第一材料的蚀刻速率。根据一个实施例的等离子体溅射装置包括室; 用于以确定的速率释放蒸气的室中的储存器; 用于衬底的安装件; 和等离子体源。

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