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1. 发明授权

US5315468A Magnetoresistive sensor having antiferromagnetic layer for exchange bias 失效
标题翻译：具有用于交换偏置的反铁磁层的磁阻传感器
公开(公告)号：US5315468A
公开(公告)日：1994-05-24
申请号：US920943
申请日：1992-07-28
申请人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
发明人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
摘要翻译：描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。向Ni-Mn合金中添加铬提高了耐腐蚀性。

2. 发明授权

US07569490B2 Electrochemical etching 失效
标题翻译：电化学蚀刻
公开(公告)号：US07569490B2
公开(公告)日：2009-08-04
申请号：US11081326
申请日：2005-03-15
申请人： Norbert Staud
发明人： Norbert Staud
IPC分类号： H01L21/302
CPC分类号： C25F3/02 , C25F3/14
摘要： Methods to etch a workpiece are described. In one embodiment, a workpiece is disposed within an etchant solution having a composition comprising a dilute acid and a non-ionic surfactant. An electric field is generated within the etchant solution to cause an anisotropic etch pattern to form on a surface of the workpiece.
摘要翻译：描述蚀刻工件的方法。在一个实施例中，将工件设置在具有包含稀酸和非离子表面活性剂的组成的蚀刻剂溶液中。在蚀刻剂溶液内产生电场，以在工件的表面上形成各向异性蚀刻图案。

3. 发明申请

US20060207889A1 Electrochemical etching 失效
公开(公告)号：US20060207889A1
公开(公告)日：2006-09-21
申请号：US11081326
申请日：2005-03-15
申请人： Norbert Staud
发明人： Norbert Staud
IPC分类号： H05K3/07 , C25B9/00 , C25F3/02
CPC分类号： C25F3/02 , C25F3/14
摘要： Methods to etch a workpiece are described. In one embodiment, a workpiece is disposed within an etchant solution having a composition comprising a dilute acid and a non-ionic surfactant. An electric field is generated within the etchant solution to cause an anisotropic etch pattern to form on a surface of the workpiece.

4. 发明授权

US5436778A Magnetoresistive sensor having antiferromagnetic exchange bias 失效
标题翻译：具有反铁磁交换偏置的磁阻传感器
公开(公告)号：US5436778A
公开(公告)日：1995-07-25
申请号：US213882
申请日：1994-03-15
申请人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
发明人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetic disk storage system wherein a magnetic includes a magnetoresistive sensor is described. The MR sensor comprises a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer has a face-centered-cubic crystalline structure and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer crystalline structure is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
摘要翻译：描述了一种磁盘存储系统，其中磁换能器包括磁阻传感器。 MR传感器包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。最初沉积时，Ni-Mn层具有面心立方晶体结构，并且表现出很少或没有交换耦合场。在相对较低温度下的一个退火循环之后，Ni-Mn层晶体结构是面心四面体并且显示出增加的晶体顺序，并且为MR元件提供足够的交换耦合以进行操作。向Ni-Mn合金中添加铬提高了耐腐蚀性。

5. 发明授权

US5380548A Method for fabricating a magnetoresistive sensor having antiferromagnetic layer 失效
标题翻译：制造具有反铁磁层的磁阻传感器的方法
公开(公告)号：US5380548A
公开(公告)日：1995-01-10
申请号：US213883
申请日：1994-03-15
申请人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
发明人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
IPC分类号： G11B5/39 , H01F10/02
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
摘要翻译：描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。向Ni-Mn合金中添加铬提高了耐腐蚀性。

6. 发明授权

US09068274B1 Electrochemical etching 有权
公开(公告)号：US09068274B1
公开(公告)日：2015-06-30
申请号：US12966859
申请日：2010-12-13
申请人： Norbert Staud
发明人： Norbert Staud
IPC分类号： C25F3/02
CPC分类号： C25F3/02 , C25F3/14
摘要： Methods to etch a workpiece are described. In one embodiment, a workpiece is disposed within an etchant solution having a composition comprising a dilute acid and a non-ionic surfactant. An electric field is generated within the etchant solution to cause an anisotropic etch pattern to form on a surface of the workpiece.

7. 发明申请

US20060207890A1 Electrochemical etching 审中-公开
公开(公告)号：US20060207890A1
公开(公告)日：2006-09-21
申请号：US11081762
申请日：2005-03-15
申请人： Norbert Staud
发明人： Norbert Staud
IPC分类号： C25F3/02
CPC分类号： C25F3/02 , C25F3/14
摘要： Methods to etch a workpiece are described. In one embodiment, a workpiece is disposed within an etchant solution having a composition comprising a dilute acid and a non-ionic surfactant. An electric field is generated within the etchant solution to cause an anisotropic etch pattern to form on a surface of the workpiece.

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