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1. 发明授权

US5306698A Methods for producing Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 oxide superconductors 失效
标题翻译：生产Tl2Ca2Ba2Cu3氧化物超导体的方法
公开(公告)号：US5306698A
公开(公告)日：1994-04-26
申请号：US775626
申请日：1991-10-10
申请人： Byung T. Ahn , Robert B. Beyers , Wen Y. Lee
发明人： Byung T. Ahn , Robert B. Beyers , Wen Y. Lee
IPC分类号： C01G1/00 , C01G15/00 , C04B35/45 , H01L39/24 , C01F11/02
CPC分类号： H01L39/2451 , C04B35/4512 , Y10S505/73 , Y10S505/731 , Y10S505/742 , Y10S505/783
摘要： Improved processes for making thin film and bulk thallium superconductors are described, as well as Tl superconductors having high critical current densities and low surface impedance. An annealing step in a reduced oxygen atmosphere is used to convert compounds containing thallium, calcium, barium and copper to a Tl-2223 superconducting phase or to convert an oxide having the nominal composition Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 O.sub.x to a crystalline Tl-2223 phase. The oxygen pressure during annealing is controlled to be below the thermodynamic stability limit for conversion of Tl-2223 to Tl-2122 and secondary phases. Temperatures less than 880.degree. C. are used, the oxygen pressure being sufficient to prevent excess thallium loss so that the Tl content in the final Tl-2223 phase is Tl.sub.1.6-2.0. Electrical devices including SQUIDs can be made with these improved superconductors.
摘要翻译：描述了制造薄膜和体积铊超导体的改进方法，以及具有高临界电流密度和低表面阻抗的T1超导体。使用还原氧气氛中的退火步骤将含有铊，钙，钡和铜的化合物转化为Tl-2223超导相，或将具有标称组成为T12Ca2Ba2Cu3Ox的氧化物转化为晶体Tl-2223相。退火过程中的氧气压力控制在低于Tl-2223转化为T1-1222和二次相的热力学稳定性极限。使用低于880℃的温度，氧气压力足以防止过量的铊损失，使得最终Tl-2223相中的T1含量为Tl1.6-2.0。包括SQUID的电气设备可以用这些改进的超导体制成。

2. 发明授权

US4532528A Archival optical storage medium 失效
标题翻译：存档光存储介质
公开(公告)号：US4532528A
公开(公告)日：1985-07-30
申请号：US498331
申请日：1983-05-26
申请人： Wen Y. Lee
发明人： Wen Y. Lee
IPC分类号： B41M5/26 , G11B7/243 , G01D15/34
CPC分类号： G11B7/243 , G11B2007/24316 , G11B7/2531 , G11B7/2533 , Y10S430/146
摘要： A recording medium comprising a transport substrate, a tellurium recording layer and an overcoat of selenium from 5 to 60.ANG. thick.
摘要翻译：一种记录介质，包括输送基板，碲记录层和厚度为5至60埃的硒的外涂层。

3. 发明授权

US4576895A Optical recording by energy-induced fractionation and homogenization 失效
$Optical recording by energy-induced fractionation and homogenization$
标题翻译：通过能量分解和均化进行光学记录
公开(公告)号：US4576895A
公开(公告)日：1986-03-18
申请号：US621410
申请日：1984-06-18
申请人： Roger W. Barton , Hans J. Coufal , Victor B. Jipson , Wen Y. Lee
发明人： Roger W. Barton , Hans J. Coufal , Victor B. Jipson , Wen Y. Lee
IPC分类号： B41M5/26 , G11B7/00 , G11B7/004 , G11B7/0045 , G11B7/243 , G11B7/257 , G11B9/00 , G11B11/00 , G03C1/94
CPC分类号： G11B7/257 , G11B11/00 , G11B7/0045 , G11B7/243 , G11B9/00 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715 , Y10S430/146
摘要： A method of and structure for optical recording by energy-induced homogenization or fractionation is disclosed. When the method involves fractionation, a film is provided that contains a homogeneous mixture of a matrix material and an incident energy absorbing material. A spot on the film is treated with sufficient energy in the form of electric fields, radiation or heat, or combinations thereof to effect fractionation and/or homogenization of the film which will undergo further physical state transition only under treatment with additional energy. In a preferred embodiment, the fractionation is effected by laser radiation. The laser irradiated spot becomes inhomogeneous and can be detected by the resulting changes in its optical properties. When the method involves homogenization, a film is provided that contains a inhomogeneous mixture. The energy treated spot in this case becomes homogeneous without undergoing a phase transition between the amorphous and crystalline phases. Numerous combinations of fractionation and homogenization can result in the writing and erasing of information in a storage device.
摘要翻译：公开了通过能量均化或分馏进行光学记录的方法和结构。当该方法包括分馏时，提供包含基质材料和入射能量吸收材料的均匀混合物的膜。以电场，辐射或热的形式或其组合的形式，以足够的能量对薄膜上的斑点进行处理，以实现膜的分级和/或均化，仅在额外的能量处理下进行进一步的物理状态转变。在优选的实施方案中，分馏通过激光辐射来实现。激光照射的斑点变得不均匀，并且可以通过其光学性质的变化来检测。当该方法包括均化时，提供含有不均匀混合物的膜。在这种情况下，能量处理的斑点变得均匀，而不会在非晶相和晶相之间经历相变。分馏和均化的许多组合可导致存储设备中信息的写入和擦除。

4. 发明授权

US06579590B2 Thermally-assisted magnetic recording disk with multilayered thermal barrier 失效
标题翻译：具有多层热障的热辅助磁记录盘
公开(公告)号：US06579590B2
公开(公告)日：2003-06-17
申请号：US09991321
申请日：2001-11-16
申请人： Yongho Ju , Wen Y. Lee
发明人： Yongho Ju , Wen Y. Lee
IPC分类号： G11B582
CPC分类号： G11B5/7325 , C23C14/06 , C23C14/185 , G11B5/82 , G11B2005/0005 , G11B2005/001 , G11B2005/0021 , Y10T428/265 , Y10T428/31544 , Y10T428/31678
摘要： A magnetic recording disk for thermally-assisted magnetic recording has a low thermal conductivity multilayered thermal barrier between the substrate and the magnetic recording layer to avoid rapid heat conduction away from the locally heated spot and to reduce the amount of power needed to raise the temperature of the recording media above a required value. The barrier comprises a plurality of alternating layers or bilayers of a metal having an electrical resistivity greater than approximately 100 microOhm-cm and a dielectric selected from the group consisting of oxides, nitrides and oxynitrides of one or more of Al and Si. The large number of metal/dielectric interfaces, each with high thermal resistance, reduces the out-of-plane thermal conductivity of the barrier, and the use of high electrical resistivity metal layers minimizes in-plane heat spreading.
摘要翻译：用于热辅助磁记录的磁记录盘在基板和磁记录层之间具有低热导率的多层热障，以避免远离局部加热点的快速热传导并减少提高温度所需的功率记录介质高于所需值。阻挡层包括具有大于约100微欧姆 - 厘米的电阻率的金属的多个交替层或双层和选自由Al和Si中的一种或多种的氧化物，氮化物和氮氧化物组成的组的电介质。大量的金属/电介质界面，每个具有高热阻，降低了屏障的平面外热导率，并且使用高电阻率金属层使面内散热最小化。

5. 发明授权

US5614727A Thin film diode having large current capability with low turn-on voltages for integrated devices 失效
标题翻译：具有大电流能力的薄膜二极管，集成器件的低导通电压
公开(公告)号：US5614727A
公开(公告)日：1997-03-25
申请号：US473036
申请日：1995-06-06
申请人： Daniele Mauri , Wen Y. Lee , Cherngye Hwang , Glen Garfunkel
发明人： Daniele Mauri , Wen Y. Lee , Cherngye Hwang , Glen Garfunkel
IPC分类号： H01L29/24 , H01L29/267 , H01L29/45 , H01L29/861 , H01L29/12
CPC分类号： H01L29/45 , H01L29/242 , H01L29/267 , H01L29/861
摘要： A thin film diode and method of fabrication having large current capability and low-turn on voltage is provided as a switching or protective device against electrostatic discharge in integrated devices such as magnetoresistive sensors and the like. A first semiconductor thin film layer of NiO.sub.x having p type properties is disposed on an arbitrary substrate, such as alumina, glass, silicon dioxide, silicon and the like. A second semiconducting layer of tin oxide or indium oxide or other transparent oxide is joined to the first layer to form a p/n junction. In one method of fabrication, the p/n junction is formed in a sputtering process under a partial oxygen pressure to control the stoichiometry of the films. Gold and Gold Indium contacts are attached to the films to provide electrical contacts. The device is enclosed in a protective coating and connected in parallel with an electronic device subject to electrostatic discharge.
摘要翻译：提供具有大电流能力和低匝导通电压的薄膜二极管和制造方法作为抵抗静电放电的开关或保护装置，诸如磁阻传感器等集成器件。具有p型性质的NiOx的第一半导体薄膜层设置在任意的基板上，例如氧化铝，玻璃，二氧化硅，硅等。氧化锡或氧化铟或其它透明氧化物的第二半导电层被接合到第一层以形成p / n结。在一种制造方法中，在部分氧气压力下以溅射工艺形成p / n结，以控制膜的化学计量。金和铟铟触点连接到电影以提供电触点。该装置封装在保护涂层中，并与静电放电的电子设备并联连接。

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