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1. 发明专利

JP2013089828A Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：JP2013089828A
公开(公告)日：2013-05-13
申请号：JP2011230395
申请日：2011-10-20
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： SHOJI TOMOYUKI , OSADA YUJI , USUI MASANORI , NISHIBE YUJI , IMAI MAKOTO , TANIDA ATSUSHI , ATSUMI TAKASHI , FURUTA NORIBUMI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module having a simple configuration.SOLUTION: A semiconductor module 10 comprises a first structure 10Ua and a second structure 10Ub. The first structure 10Ua and the second structure 10Ub have common configurations. A first output bus bar Uout1 of the first structure 10Ua and a high-voltage-side bus bar 10P of the second structure 10Ub have common configurations. A low-voltage-side bus bar 10N of the first structure 10Ua and a second output bus bar Uout2 of the second structure 10Ub have common configurations.
摘要翻译：要解决的问题：提供具有简单配置的半导体模块。解决方案：半导体模块10包括第一结构10Ua和第二结构10Ub。第一结构10Ua和第二结构10Ub具有共同的结构。第一结构10Ua的第一输出汇流条Uout1和第二结构10Ub的高压侧汇流条10P具有共同的结构。第一结构10Ua的低压侧母线10N和第二结构10Ub的第二输出母线Uout2具有共同的结构。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013251472A Heat transfer member and module comprising the same 有权
标题翻译：传热部件和包含其的模块
公开(公告)号：JP2013251472A
公开(公告)日：2013-12-12
申请号：JP2012126705
申请日：2012-06-04
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： ASADA TAKASHI , USUI MASANORI , SHOJI TOMOYUKI , IMAI MAKOTO , TANIDA ATSUSHI
IPC分类号： H01L23/36 , H01L21/60 , H01L23/34 , H01L23/48
CPC分类号： H01L23/49568 , H01L23/36 , H01L23/3735 , H01L23/473 , H01L23/492 , H01L24/29 , H01L24/33 , H01L2224/29111 , H01L2924/0132 , H01L2924/0133 , H01L2924/10253 , H01L2924/10272 , H01L2924/1301 , H01L2924/13055 , H01L2924/13064 , H01L2924/13091 , H01L2924/00 , H01L2924/01029 , H01L2924/0105 , H01L2924/01047
摘要： PROBLEM TO BE SOLVED: To provide a heat transfer member capable of suppressing a gap in thermal expansion between the heat transfer member and a semiconductor element, and having a high heat radiation effect as well.SOLUTION: A heat transfer member 40 is provided between a semiconductor element 30 and an electrode plate 50. The heat transfer member 40 comprises a metal part 42 extending between a first surface 40A on a side of the semiconductor element 30 and a second surface 40B on a side of the electrode plate 50, and a ceramic part 44 surrounding the metal part 42. In the metal part 42, an area of the first surface 40A is smaller than an area of the second surface 40B.
摘要翻译：要解决的问题：提供能够抑制传热构件和半导体元件之间的热膨胀间隙并且具有高散热效果的传热构件。解决方案：传热构件40设置在半导体元件30和电极板50.传热构件40包括在半导体元件30的一侧的第一表面40A和在电极板50的侧面上的第二表面40B之间延伸的金属部分42，以及陶瓷围绕金属部分42的部分44.在金属部分42中，第一表面40A的区域小于第二表面40B的面积。

3. 发明专利

JP2011210947A Insulating substrate and module with the insulating substrate 有权
标题翻译：用绝缘基板绝缘基板和模块
公开(公告)号：JP2011210947A
公开(公告)日：2011-10-20
申请号：JP2010077079
申请日：2010-03-30
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , YAGI YUJI , SHOJI TOMOYUKI , SUZUKI TOMOKIYO
IPC分类号： H05K1/02
CPC分类号： H01L2224/32225
摘要： PROBLEM TO BE SOLVED: To provide an insulating substrate that passes both a cooling cycle test and a power cycle test.SOLUTION: The insulating substrate 30 is provided between a radiator 20 and a semiconductor device 50. The insulating substrate 30 includes a first wiring layer 31, a ceramic insulating layer 32 and a second wiring layer 33. The first wiring layer 31 is brazed to the radiator 20, and 0.2% proof stress has a first value. The second wiring layer 33 is soldered to the semiconductor device 50, and 0.2% proof stress has a second value. The first value of the first wiring layer 31 is smaller than the second value of the second wiring layer 33.
摘要翻译：要解决的问题：提供通过冷却循环试验和动力循环试验的绝缘基板。解决方案：绝缘基板30设置在散热器20和半导体装置50之间。绝缘基板30包括第一布线层 31是陶瓷绝缘层32和第二布线层33.第一布线层31钎焊到散热器20，0.2％的弹性应力具有第一值。第二布线层33被焊接到半导体器件50，并且0.2％的抗原应力具有第二值。第一布线层31的第一值小于第二布线层33的第二值。

4. 发明专利

JP2010258233A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2010258233A
公开(公告)日：2010-11-11
申请号：JP2009106917
申请日：2009-04-24
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： NAKAJIMA KIYOFUMI , NISHIDA SHUICHI , SHOJI TOMOYUKI , YAGI YUJI , WADA KENSUKE
IPC分类号： H01L27/06 , H01L21/822 , H01L21/8234 , H01L23/40 , H01L27/04 , H01L27/088 , H01L29/739 , H01L29/78
CPC分类号： H01L2224/32225 , H01L2224/48091 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To simply and accurately detect occurrence of cracks in a semiconductor device and to make control according to detection results. SOLUTION: A semiconductor device is provided with the semiconductor device which is bonded to a substrate in a metal joint. In the peripheral region of the semiconductor device, a thermistor element 160 in which an electric resistance changes according to a temperature is provided, and is connected to a control electrode 122 of a transistor element 120. When there occurs abnormal heat generation due to cracks in the joint, the resistance of the thermistor element 160 changes to control the operation state of the transistor element 120. The operation of the semiconductor device is stopped thereby at an abnormal temperature. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：简单且准确地检测半导体装置中的裂纹的发生，并根据检测结果进行控制。解决方案：半导体器件设置有在金属接头中结合到基板的半导体器件。在半导体器件的周边区域中，设置有电阻根据温度变化的热敏电阻元件160，并连接到晶体管元件120的控制电极122.当发生由于裂纹引起的异常发热接头时，热敏电阻元件160的电阻改变以控制晶体管元件120的工作状态。半导体器件的操作停止在异常温度。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2008258550A Igbt simulation system and igbt simulation program 有权
标题翻译： IGBT仿真系统和IGBT仿真程序
公开(公告)号：JP2008258550A
公开(公告)日：2008-10-23
申请号：JP2007102217
申请日：2007-04-09
申请人： Hiroshima Univ , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 国立大学法人広島大学 , 株式会社豊田中央研究所
发明人： EZAKI TATSUYA , OHASHI AKIO , MIURA MICHIKO , MIYAKE MASAAKI , YOKOMICHI MASAHIRO , SHOJI TOMOYUKI , KOJIMA TAKASHI , NISHIBE YUJI , UEDA KENJI
IPC分类号： H01L21/336 , H01L29/00 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To simulate the operation of IGBT with high precision.
SOLUTION: Currents I
E , I
C , and I
Drain of IGBT are represented using a potential difference V
EB at a junction part between an internal P+ (emitter) region 20 and an N (base) region 18, and are determined with Kirchhoff principle I
E =I
C +I
Drain about the current in the IGBT. Using the determined V
EB , the currents I
E , I
C , and I
Drain are acquired. A transitional current is determined based on the change amount of internal accumulated charges.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：高精度地模拟IGBT的工作。使用电位差V SB表示IGBT的电流I C ，I C 和I 漏极 / SB>在内部P +（发射极）区域20和N（基底）区域18之间的连接部分处，并且由基尔霍夫原理I确定。 + I 漏极关于IGBT中的电流。使用确定的V EB ，获得电流I C 和I 漏极。过渡电流根据内部累积费用的变化量确定。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2005277122A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005277122A
公开(公告)日：2005-10-06
申请号：JP2004088508
申请日：2004-03-25
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SHOJI TOMOYUKI , ISHIKO MASAYASU , UEDA KENJI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To rapidly turn on the main gate electrode of a semiconductor device in the 'OFF' state on detecting transitional application of an excess voltage to the semiconductor device.
SOLUTION: The semiconductor device has a trench gate electrode 34 opposing a body region 28 via a gate insulating film 32 and an MOS transistor 40 having a channel opposing region 48 wherein a potential moves up and down in accordance with the potential of the body region 28. An auxiliary source region 44 formed in the MOS transistor 40 is connected to the trench gate electrode via a gate electrode extension region 54. When the potential of the body region 28 rises, the MOS transistor 40 is conductively connected and a voltage (V2) applied to the auxiliary drain region 43 formed in the MOS transistor is applied to the trench gate electrode 34.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了在半导体器件检测到过剩的电压的过渡时，将半导体器件的主栅电极快速导通到“断开”状态。解决方案：半导体器件具有沟槽栅极电极34，其经由栅极绝缘膜32和具有沟道相对区域48的MOS晶体管40与体区域28相对，其中电位根据电极的电位而上下移动形成在MOS晶体管40中的辅助源极区域44经由栅电极延伸区域54连接到沟槽栅极电极。当体区域28的电位上升时，MOS晶体管40导通，电压施加到形成在MOS晶体管中的辅助漏极区域43的（V2）施加到沟槽栅极34上。（C）2006，JPO＆NCIPI

7. 发明专利

JP2014216543A 半導体モジュール有权
标题翻译：半导体模块
公开(公告)号：JP2014216543A
公开(公告)日：2014-11-17
申请号：JP2013093978
申请日：2013-04-26
申请人：株式会社豊田中央研究所 , Toyota Central R&D Labs Inc , トヨタ自動車株式会社 , Toyota Motor Corp
发明人： SHOJI TOMOYUKI , OSADA YUJI , USUI MASANORI , IMAI MAKOTO , ORIMOTO NORIMUNE
IPC分类号： H01L23/34 , H01L25/07 , H01L25/18
CPC分类号： H01L23/34 , H01L25/04
摘要：【課題】半導体素子と配線層が圧接固定される圧接型の半導体モジュールにおいて、半導体素子が動作したときの温度分布に起因して半導体素子に加わる応力を緩和する技術を提供すること。【解決手段】圧接型の半導体モジュール1は、半導体素子4と配線層6の間に設けられており、圧接方向に直交する面内に配置されている複数の弾性機構10を備えている。弾性機構10は、半導体素子4に接触する導電性の接触体12、及び接触体12を半導体素子4に向けて付勢する弾性体14を有している。半導体素子4と配線層6は、接触体12を介して電気的に接続可能に構成されている。【選択図】図2
摘要翻译：要解决的问题：为了提供一种在半导体元件和半导体元件工作时由于温度分布而施加到半导体元件上的应力的技术，其中半导体元件和布线层是固定的压力压焊型半导体模块1包括设置在半导体元件4和布线层6之间的多个弹性机构10，并且设置在垂直于压接方向的平面中。弹性机构10包括：与半导体元件4接触的导电接触体12; 以及将接触体12朝向半导体元件4偏压的弹性体14.半导体元件4和布线层6通过接触体12形成为彼此电连接。

8. 发明专利

JP2012160548A Insulation substrate, and power module having insulation substrate 审中-公开
标题翻译：绝缘衬底和具有绝缘衬底的电源模块
公开(公告)号：JP2012160548A
公开(公告)日：2012-08-23
申请号：JP2011018624
申请日：2011-01-31
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , YAGI YUJI , SHOJI TOMOYUKI , ASADA TAKASHI , SUZUKI TOMOKIYO
IPC分类号： H01L23/36
CPC分类号： H01L2224/32225
摘要： PROBLEM TO BE SOLVED: To provide an insulation substrate capable of satisfying both of a cold heat cycle test and a power cycle test.SOLUTION: An insulation substrate 50 comprises a first wiring layer 52, an insulation layer 54, and a second wiring layer 56. The first wiring layer 52 is constituted with one or more layers. The second wiring layer 56 is constituted with one or more layers. Total sum of 0.2% strength and thickness of each of the one or more layers constituting the first wiring layer 52 is smaller than total sum of 0.2% strength and thickness of each of the one or more layers constituting the second wiring layer 56. Thereby, the insulation substrate 50 is warped into a convex shape toward a radiator 30.
摘要翻译：要解决的问题：提供能够满足冷热循环试验和动力循环试验两者的绝缘基板。解决方案：绝缘基板50包括第一布线层52，绝缘层54和第二布线层56.第一布线层52由一层或多层构成。第二布线层56由一层或多层构成。构成第一布线层52的一个或多个层中的每一个的强度和厚度的0.2％的总和小于构成第二布线层56的一个或多个层中的每一个的强度的0.2％和厚度的总和。因此，绝缘基板50朝向散热器30翘曲成凸形。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011159662A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011159662A
公开(公告)日：2011-08-18
申请号：JP2010017870
申请日：2010-01-29
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SHOJI TOMOYUKI , YAGI YUJI , ASADA TAKASHI , OSADA YUJI , SUZUKI TOMOKIYO
IPC分类号： H01L23/36
CPC分类号： H01L24/33 , H01L2224/32225 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of dissipating heat generated by a semiconductor element through a substrate and more properly inhibiting deterioration of a junction between the semiconductor element and the substrate. SOLUTION: The semiconductor device 10 includes the semiconductor element 11, the junction 12, and a heat sink 15 laminated in order. A direction in which the semiconductor element 11 and the heat sink 15 are laminated is assumed as a thickness direction, and a direction along a plane perpendicular to the thickness direction is assumed as a plane direction. The heat sink 15 includes: a first embedded portion 16 formed in a central region corresponding to a laminate range of the semiconductor element 11, the heat sink having a thermal conductivity in the thickness direction higher than the thermal conductivity in the plane direction and the thermal conductivity of a base material of the heat sink 15; and a second embedded portion 17 formed in a peripheral region, the second embedded portion having a linear expansion coefficient in the plane direction smaller than the linear expansion coefficient in the plane direction of the first embedded portion 16 and the linear expansion coefficient of the base material of the heat sink 15 and having a rigidity in the plane direction higher than the rigidity in the plane direction of the first embedded portion 16 and the rigidity of the base material of the heat sink 15. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体器件，其能够通过衬底散发由半导体元件产生的热量，并且更适当地抑制半导体元件和衬底之间的接合的劣化。解决方案：半导体器件10包括依次层叠的半导体元件11，接合部12和散热片15。将半导体元件11和散热片15层叠的方向作为厚度方向，将与厚度方向垂直的面的方向作为平面方向。散热器15包括：形成在对应于半导体元件11的层叠范围的中心区域中的第一嵌入部分16，散热器在厚度方向上的热传导率高于平面方向上的热导率，热量散热片15的基材的导电性; 以及形成在周边区域中的第二嵌入部分17，第二嵌入部分在平面方向上具有小于第一嵌入部分16的平面方向上的线膨胀系数的线膨胀系数和基材的线膨胀系数并且具有比第一嵌入部16的平面方向的刚性高的平面方向的刚性和散热片15的基材的刚性。（C）2011年， JPO＆INPIT

10. 发明专利

JP2014183283A Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：JP2014183283A
公开(公告)日：2014-09-29
申请号：JP2013058349
申请日：2013-03-21
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： USUI MASANORI , OSADA YUJI , SHOJI TOMOYUKI , SUGIYAMA TAKAHIDE , ORIMOTO NORIMUNE
IPC分类号： H01L23/40 , H01L25/10
CPC分类号： H01L2224/33
摘要： PROBLEM TO BE SOLVED: To provide an art to relax stress applied to a semiconductor element due to a temperature distribution when the semiconductor element operates in a press pack semiconductor module in which the semiconductor element and a wiring layer are fixed by pressure welding.SOLUTION: A press pack semiconductor module includes a conductive stress relaxation part. The stress relaxation part is provided between a semiconductor element and a wiring layer and deformable.
摘要翻译：要解决的问题：提供一种在半导体元件在通过压焊固定半导体元件和布线层的压制组件半导体模块中工作时由于温度分布而放松施加到半导体元件的应力的技术。解决方案：印刷机组半导体模块包括导电应力松弛部分。应力松弛部分设置在半导体元件和布线层之间并且可变形。

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