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1. 发明授权

US09985150B2 Radiation detector and method of manufacturing the same 有权
公开(公告)号：US09985150B2
公开(公告)日：2018-05-29
申请号：US13639318
申请日：2011-02-21
申请人： Toshinori Yoshimuta , Satoshi Tokuda , Koichi Tanabe , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
发明人： Toshinori Yoshimuta , Satoshi Tokuda , Koichi Tanabe , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
IPC分类号： H01L31/0236 , H01L27/146
CPC分类号： H01L31/0236 , H01L27/14636 , Y02E10/50
摘要： A graphite substrate is processed to have surface unevenness in a range of 1 μm to 8 μm. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.

2. 发明申请

US20050158906A1 Radiation detector 有权
标题翻译：辐射检测器
公开(公告)号：US20050158906A1
公开(公告)日：2005-07-21
申请号：US11071165
申请日：2005-03-04
申请人： Toshiyuki Sato , Satoshi Tokuda
发明人： Toshiyuki Sato , Satoshi Tokuda
IPC分类号： G01T1/24 , H01L21/336 , H01L27/14 , H01L27/146 , H01L29/786 , H01L31/0264 , H01L31/09 , H04N5/32 , H01L21/00 , G01J1/00 , H01L25/00 , H01L27/00
CPC分类号： H04N5/32 , H01L27/14609 , H01L27/14665
摘要： In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element electrodes connected to source electrodes of the high-speed switching elements, and charge storage capacitances disposed between the picture element electrodes and ground on a insulating base plate. Then, a converting layer is formed at upper portions of the respective picture element electrodes at a temperature between 300° C. and 800° C. to generate a pair of electron-hole by absorbing light or radiation. The active matrix board is formed of a poly-silicon process board.
摘要翻译：在制造放射线检测器的方法中，形成有源矩阵基板，包括以二维格子形状排列的栅极线和数据线，多个高速开关元件，设置在各个格子点上并连接到栅极线连接到高速开关元件的源极的数据线，像素电极以及设置在像素电极之间并在绝缘基板上接地的电荷存储电容。然后，在300℃和800℃之间的温度下，在各个像素电极的上部形成转换层，以通过吸收光或辐射产生一对电子空穴。有源矩阵板由多晶硅处理板形成。

3. 发明授权

US06512233B1 Radiation detector and radiation image taking device 有权
标题翻译：辐射检测器和放射成像仪
公开(公告)号：US06512233B1
公开(公告)日：2003-01-28
申请号：US09671829
申请日：2000-09-27
申请人： Toshiyuki Sato , Satoshi Tokuda
发明人： Toshiyuki Sato , Satoshi Tokuda
IPC分类号： H01L31115
CPC分类号： H01L27/14696 , H01L27/14676 , H01L31/115
摘要： In a radiation detector, a polycrystalline film is formed by a closed spaced sublimation using a sintered material of at least one of a CdTe and CdZnTe powder. The CdTe or CdZnTe film has a thickness sufficient to catch radiation and a large area corresponding to a size of a supporting base plate, which can be obtained in a short time. Thus, a radiation detector and a radiation image taking device having a large area can be obtained.
摘要翻译：在放射线检测器中，通过使用CdTe和CdZnTe粉末中的至少一种的烧结材料的闭合间隔升华形成多晶膜。 CdTe或CdZnTe膜具有足以捕获辐射的厚度和对应于可在短时间内获得的支撑基板的尺寸的大面积。因此，可以获得具有大面积的放射线检测器和放射线摄像装置。

4. 发明授权

US06342700B1 Two-dimensional image detector 有权
标题翻译：二维图像检测器
公开(公告)号：US06342700B1
公开(公告)日：2002-01-29
申请号：US09298169
申请日：1999-04-23
申请人： Yoshihiro Izumi , Osamu Teranuma , Toshiyuki Sato , Satoshi Tokuda
发明人： Yoshihiro Izumi , Osamu Teranuma , Toshiyuki Sato , Satoshi Tokuda
IPC分类号： G01T124
CPC分类号： H01L31/10 , H01L27/14665 , H01L27/14683
摘要： An active matrix substrate provided with a matrix of electrode wires, a plurality of thin film transistors (TFTs) individually formed at intersections of the matrix, and pixel electrodes connected to the electrode wires through the thin film transistors (TFTs) is laminated to a counter substrate provided with connecting electrodes by means of an anisotropic conductive bonding agent. The counter substrate is composed of 12 divided pieces which are tiled as panes.
摘要翻译：设置有电极线的矩阵的有源矩阵基板，分别形成在矩阵的交点处的多个薄膜晶体管（TFT）和通过薄膜晶体管（TFT）连接到电极线的像素电极被层压到计数器基板通过各向异性导电粘合剂设置有连接电极。对面基板由平铺为平铺的12个分割片组成。

5. 发明申请

US20130115731A1 METHOD OF MANUFACTURING RADIATION DETECTOR 有权
标题翻译：制造辐射探测器的方法
公开(公告)号：US20130115731A1
公开(公告)日：2013-05-09
申请号：US13808894
申请日：2011-02-09
申请人： Satoshi Tokuda , Koichi Tanabe , Toshinori Yoshimuta , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
发明人： Satoshi Tokuda , Koichi Tanabe , Toshinori Yoshimuta , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
IPC分类号： H01L31/0368
CPC分类号： H01L21/02573 , H01L21/02562 , H01L21/0262 , H01L27/14659 , H01L27/14692 , H01L27/14696 , H01L31/02966 , H01L31/115 , H01L31/1832 , Y02E10/50
摘要： Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.
摘要翻译：尽管在通过气相沉积或升华形成由多晶膜或多晶层压膜形成的检测层的第一工艺过程中不再提供Cl（氯），但另外的源（例如，含Cl 气体）在第一个过程的开始或过程中被提供。因此，作为多晶膜的检测层或CdTe，ZnTe或CdZnTe的多晶层叠膜可以从成膜的第一工序开始到结束的厚度方向均匀地掺杂Cl。结果，可以实现均匀的结晶粒子和均匀的检测特性。

6. 发明授权

US07498189B2 Method of producing a radiation detector with a polysilicon converting layer 有权
标题翻译：制造具有多晶硅转换层的放射线检测器的方法
公开(公告)号：US07498189B2
公开(公告)日：2009-03-03
申请号：US11071165
申请日：2005-03-04
申请人： Toshiyuki Sato , Satoshi Tokuda
发明人： Toshiyuki Sato , Satoshi Tokuda
IPC分类号： H01L21/00
CPC分类号： H04N5/32 , H01L27/14609 , H01L27/14665
摘要： In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element electrodes connected to source electrodes of the high-speed switching elements, and charge storage capacitances disposed between the picture element electrodes and ground on a insulating base plate. Then, a converting layer is formed at upper portions of the respective picture element electrodes at a temperature between 300° C. and 800° C. to generate a pair of electron-hole by absorbing light or radiation. The active matrix board is formed of a poly-silicon process board.
摘要翻译：在制造放射线检测器的方法中，形成有源矩阵基板，包括以二维格子形状排列的栅极线和数据线，多个高速开关元件，设置在各个格子点上并连接到栅极线连接到高速开关元件的源极的数据线，像素电极以及设置在像素电极之间并在绝缘基板上接地的电荷存储电容。然后，在300℃和800℃之间的温度下，在各个像素电极的上部形成转换层，以通过吸收光或辐射产生一对电子空穴。有源矩阵板由多晶硅处理板形成。

7. 发明授权

US06262408B1 Two-dimensional image detector and process for manufacturing the same 有权
标题翻译：二维图像检测器及其制造方法
公开(公告)号：US06262408B1
公开(公告)日：2001-07-17
申请号：US09229269
申请日：1999-01-13
申请人： Yoshihiro Izumi , Osamu Teranuma , Tokihiko Shinomiya , Toshiyuki Sato , Satoshi Tokuda
发明人： Yoshihiro Izumi , Osamu Teranuma , Tokihiko Shinomiya , Toshiyuki Sato , Satoshi Tokuda
IPC分类号： H01L2700
CPC分类号： H01L27/14676 , H01L2924/351
摘要： A two-dimensional image detector of the present invention includes: an active matrix substrate equipped with charge storage capacitors and TFTs; and an opposing substrate equipped with a semiconductor substrate. The two-dimensional image detector is formed by adhering the active matrix substrate and the opposing substrate to each other with an anisotropic conductive adhesive agent. With this structure, since a semiconductor layer is not required to be deposited on the active matrix substrate where the TFTs are already formed, it is possible to use CdTe, CdZnTe, etc. The use of CdTe, CdZnTe, etc. as a material of the semiconductor layer having photoconductivity allows the two-dimensional image detector to show good response and to deal with the dynamic images.
摘要翻译：本发明的二维图像检测器包括：配备有电荷存储电容器和TFT的有源矩阵基板; 以及配备有半导体基板的对置基板。二维图像检测器通过用各向异性导电粘合剂将有源矩阵基板和相对基板彼此粘合而形成。利用这种结构，由于半导体层不需要沉积在已经形成TFT的有源矩阵基板上，所以可以使用CdTe，CdZnTe等。使用CdTe，CdZnTe等作为具有光电导性的半导体层允许二维图像检测器显示出良好的响应并且处理动态图像。

8. 发明申请

US20140246744A1 METHOD OF MANUFACTURING RADIATION DETECTOR AND RADIATION DETECTOR 审中-公开
标题翻译：制造辐射探测器和辐射探测器的方法
公开(公告)号：US20140246744A1
公开(公告)日：2014-09-04
申请号：US14009210
申请日：2012-03-19
申请人： Masatomo Kaino , Satoshi Tokuda , Toshinori Yoshimuta , Hiroyuki Kishihara , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
发明人： Masatomo Kaino , Satoshi Tokuda , Toshinori Yoshimuta , Hiroyuki Kishihara , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
IPC分类号： H01L31/18 , H01L31/0272
CPC分类号： H01L31/18 , A61B6/4233 , H01L27/14676 , H01L27/14696 , H01L31/0272
摘要： A graphite substrate is accommodated into a chamber where vacuum drawing is performed via a pump. Thereafter, carbon is heated under vacuum, whereby impurities in the carbon are evaporated causing the carbon to be purified. The carbon in the graphite substrate is purified, achieving suppression of the impurities as donor/acceptor elements and also metallic elements in the semiconductor layer of 0.1 ppm or less, the impurities being contained in the carbon in the graphite substrate. As a result, occurrence of leak current or an abnormal leak point enables to be suppressed, and thus abnormal crystal growth in the semiconductor layer enables to be suppressed.
摘要翻译：将石墨基板容纳在通过泵进行真空拉拔的室中。此后，在真空下加热碳，由此碳中的杂质被蒸发，使得碳被净化。纯化石墨基质中的碳，实现作为供体/受体元素的杂质以及半导体层中的金属元素抑制为0.1ppm以下，杂质包含在石墨基板中的碳中。结果，能够抑制漏电流或异常泄漏点的发生，能够抑制半导体层的异常晶体生长。

9. 发明申请

US20130026468A1 RADIATION DETECTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：辐射探测器及其制造方法
公开(公告)号：US20130026468A1
公开(公告)日：2013-01-31
申请号：US13639318
申请日：2011-02-21
申请人： Toshinori Yoshimuta , Satoshi Tokuda , Koichi Tanabe , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
发明人： Toshinori Yoshimuta , Satoshi Tokuda , Koichi Tanabe , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
IPC分类号： H01L31/0368
CPC分类号： H01L31/0236 , H01L27/14636 , Y02E10/50
摘要： A graphite substrate is processed to have surface unevenness in a range of 1 μm to 8 μm. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.
摘要翻译：将石墨基板加工成具有1μm至8μm范围内的表面凹凸。因此，层叠在石墨基板上的半导体膜具有稳定的膜质量，因此可以提高石墨基板和半导体层的粘附性。当在石墨基板和半导体层之间插入电子阻挡层时，电子阻挡层薄，因此石墨基板的表面凹凸被转印到电子阻挡层上。因此，电子阻挡层也具有大致在这样的范围内的表面凹凸。因此，可以制造与将半导体层直接连接到石墨基板的结构几乎相同的效果。

10. 发明授权

US06407374B1 Two-dimensional array type detecting device having a common and individual electrodes 有权
标题翻译：二维阵列型检测装置具有公共和单独的电极
公开(公告)号：US06407374B1
公开(公告)日：2002-06-18
申请号：US09650846
申请日：2000-08-29
申请人： Toshiyuki Sato , Satoshi Tokuda , Kenji Sato , Junichi Suzuki , Shinya Hirasawa , Naoyuki Hori , Toshinori Yoshimuta , Hidetoshi Kishimoto
发明人： Toshiyuki Sato , Satoshi Tokuda , Kenji Sato , Junichi Suzuki , Shinya Hirasawa , Naoyuki Hori , Toshinori Yoshimuta , Hidetoshi Kishimoto
IPC分类号： H01L2700
CPC分类号： H01L27/14601 , H01L27/1464
摘要： A two-dimensional array type detecting device of the invention is formed of a detecting side substrate, and a readout side substrate laminated together. In the detecting side substrate, a high resistivity responsive semiconductor film is laminated on a substrate through a common electrode therebetween, and semiconductor films for connection are formed for the respective sections corresponding to a two-dimensional array arrangement. Therefore, leak and expansion of carriers produced in the high resistivity responsive semiconductor are prevented in a direct conversion system, wherein light or radiation enters from a side of the glass substrate, in which the common electrode is not formed. Thus, a detecting sensitivity and space resolution can be improved. Namely, a dynamic range is large, and a crosstalk is small.
摘要翻译：本发明的二维阵列型检测装置由检测侧基板和层叠在一起的读出侧基板构成。在检测侧基板中，通过它们之间的公共电极在基板上层叠高电阻率响应半导体膜，并且对应于二维阵列布置的各个部分形成用于连接的半导体膜。因此，在直接转换系统中防止在高电阻率响应半导体中产生的载流子的泄漏和膨胀，其中光或辐射从未形成公共电极的玻璃基板的一侧进入。因此，可以提高检测灵敏度和空间分辨率。也就是说，动态范围大，串扰小。

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