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1. 发明授权

US08871552B2 Method of manufacturing radiation detector 有权
标题翻译：辐射探测器的制造方法
公开(公告)号：US08871552B2
公开(公告)日：2014-10-28
申请号：US13808894
申请日：2011-02-09
申请人： Satoshi Tokuda , Koichi Tanabe , Toshinori Yoshimuta , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
发明人： Satoshi Tokuda , Koichi Tanabe , Toshinori Yoshimuta , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
IPC分类号： H01L21/00 , H01L21/20 , H01L31/18 , H01L31/115 , H01L21/02 , H01L31/0296 , H01L27/146
CPC分类号： H01L21/02573 , H01L21/02562 , H01L21/0262 , H01L27/14659 , H01L27/14692 , H01L27/14696 , H01L31/02966 , H01L31/115 , H01L31/1832 , Y02E10/50
摘要： Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.
摘要翻译：尽管在通过气相沉积或升华形成由多晶膜或多晶层压膜形成的检测层的第一工艺过程中不再提供Cl（氯），但另外的源（例如，含Cl 气体）在第一个过程的开始或过程中被提供。因此，作为多晶膜的检测层或CdTe，ZnTe或CdZnTe的多晶层叠膜可以从成膜的第一工序开始到结束的厚度方向均匀地掺杂Cl。结果，可以实现均匀的结晶粒子和均匀的检测特性。

2. 发明授权

US08581201B2 Power supply apparatus for a detector, and a light or radiation detection system having the same 失效
标题翻译：用于检测器的电源装置，以及具有该检测器的光或辐射检测系统
公开(公告)号：US08581201B2
公开(公告)日：2013-11-12
申请号：US12669390
申请日：2007-07-17
申请人： Toshinori Yoshimuta
发明人： Toshinori Yoshimuta
IPC分类号： G01T1/24
CPC分类号： A61B6/032 , A61B6/56 , A61B6/586 , A61B2560/0214 , G01T7/00 , H04N5/32 , Y10T307/406
摘要： A power supply apparatus for a detector of this invention provides a plurality of power supplies for the detector for detecting light or radiation, and includes a power output device capable of individually outputting the plurality of power supplies to be provided for the detector, a detection device for detecting a power supply state of a utility power source, a control device for carrying out an abnormal stopping process to stop the power supplies at the power output device in a predetermined order upon determination based on a result of detection by the detection device that an abnormality has occurred, and an electric storage device for supplying electric power to the control device, when the control device determines that an abnormality has occurred, to permit the control device to carry out the abnormal stopping process. Thus, without having a large-scale uninterruptible power supply system, the detector can be protected even when the electric power supply state from the utility power source becomes abnormal.
摘要翻译：本发明的检测器的电源装置为检测器提供多个用于检测光或辐射的电源，并且包括能够单独地输出为检测器提供的多个电源的功率输出装置，检测装置用于检测公用电源的电源状态的控制装置，用于执行异常停止处理的控制装置，用于基于检测装置的检测结果确定，以预定顺序停止电力输出装置处的电力供应，并且当控制装置确定发生异常时，向控制装置供电，并允许控制装置执行异常停止处理的蓄电装置。因此，在没有大型不间断电源系统的情况下，即使当来自公用电源的电力供给状态变得异常时，也可以保护检测器。

3. 发明授权

US08466534B2 Radiation detector, and a radiographic apparatus having the same 有权
标题翻译：放射线检测器和具有该辐射检测器的射线照相设备
公开(公告)号：US08466534B2
公开(公告)日：2013-06-18
申请号：US13203769
申请日：2010-03-26
申请人： Shingo Furui , Toshinori Yoshimuta , Junichi Suzuki , Koji Watadani , Satoru Morita
发明人： Shingo Furui , Toshinori Yoshimuta , Junichi Suzuki , Koji Watadani , Satoru Morita
IPC分类号： H01L271/46
CPC分类号： H01L27/14676 , G01T1/244 , H01L31/085
摘要： The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.
摘要翻译：本发明的结构包括依次层叠的有源矩阵基板，非晶硒层，高电阻层，金电极层，绝缘层和辅助板。在本发明的一个方面，绝缘层具有添加无机阴离子交换剂，以提供防止非晶半导体层和载体选择性高电阻膜中的空隙形成和针孔形成的辐射检测器，而不会在辅助板无机阴离子交换剂吸附绝缘层中的氯离子，从而防止由于氯离子被吸引到金电极层而导致的X射线检测器的破坏。

4. 发明申请

US20110199523A1 IMAGING DEVICE 审中-公开
标题翻译：成像装置
公开(公告)号：US20110199523A1
公开(公告)日：2011-08-18
申请号：US13124099
申请日：2008-10-15
申请人： Koichi Tanabe , Toshinori Yoshimuta , Susumu Adachi
发明人： Koichi Tanabe , Toshinori Yoshimuta , Susumu Adachi
IPC分类号： H04N5/335
CPC分类号： G01T1/244 , H01L27/14632 , H01L27/14659 , H04N5/32
摘要： Conventional reset ability is fixed of resetting an amplifier in a charge-to-voltage conversion amplifier. According to an imaging device of this invention, reset ability may be switched. For this purpose, a reset ability-switching function is provided for switching power consumption of the amplifier as reset ability of resetting an amplifier in the charge-to-voltage conversion amplifier, which may realize free switching of the power consumption as the reset ability and adaptability to various types of charge-to-voltage conversion. Accordingly, heat generation may be suppressed by switching power consumption to the lower one in the case where heat generation possibly increases.
摘要翻译：传统的复位能力固定在电荷到电压转换放大器中的放大器复位。根据本发明的成像装置，可以切换复位能力。为此，提供了一种复位能力切换功能，用于将放大器的功耗切换为将电荷 - 电压转换放大器中的放大器复位的复位能力，其可以实现作为复位能力的功耗的自由切换，以及适应各种类型的电荷电压转换。因此，在发热可能增加的情况下，通过将功率消耗切换到较低温度，可以抑制发热。

5. 发明申请

US20080087832A1 Radiation Detector 审中-公开
标题翻译：辐射检测器
公开(公告)号：US20080087832A1
公开(公告)日：2008-04-17
申请号：US11666463
申请日：2005-09-30
申请人： Kenji Sato , Toshinori Yoshimuta
发明人： Kenji Sato , Toshinori Yoshimuta
IPC分类号： H01L31/00
CPC分类号： H01L31/115 , H01L27/14609 , H01L27/14632 , H01L27/14676 , H01L31/161 , H04N5/32
摘要： [OBJECT] To provide a radiation detector that allows a substrate with a semiconductor layer, and a light emitting device, to be attached simply. [SOLUTION] A glass substrate 11 having an X-ray sensitive semiconductor 14 for converting incident X rays into carriers, and a planar light emitting mechanism 28 disposed on a side opposite from an X-ray incidence side of the glass substrate 11, are provided to remove carriers remaining in the X-ray sensitive semiconductor 14 by means of light emitted from the light emitting mechanism 28. Since a gel-like adhesive sheet 32 having light transmissivity is interposed between the glass substrate 11 and light emitting mechanism 28, and the light emitting mechanism 28 is planar, the glass substrate 11 and light emitting mechanism 28 can be attached simply. Since the adhesive sheet 32 interposed has light transmissivity, the light emitted from the light emitting mechanism 28 can be transmitted through the adhesive sheet 32, without being blocked, to irradiate the glass substrate 11.
摘要翻译：为了提供允许具有半导体层和发光器件的衬底简单地附接的辐射检测器。 [解决方案]具有用于将入射的X射线转换成载体的X射线敏感半导体14的玻璃基板11和布置在与玻璃基板11的X射线入射侧相反的一侧的平面发光机构28 以通过从发光机构28发射的光去除残留在X射线敏感半导体14中的载流子。由于在玻璃基板11和发光机构28之间夹有具有透光性的凝胶状粘接片32，发光机构28为平面状，因此能够简单地安装玻璃基板11和发光机构28。由于插入的粘合片32具有透光性，因此从发光机构28发射的光可以透过粘合片32而不被阻挡以照射玻璃基板11。

6. 发明申请

US20050272181A1 Process for producing a flat panel radiation detector and a flat panel radiation detector 失效
标题翻译：用于制造平板辐射探测器和平板辐射探测器的方法
公开(公告)号：US20050272181A1
公开(公告)日：2005-12-08
申请号：US11136601
申请日：2005-05-23
申请人： Junichi Suzuki , Nobuya Nagafune , Kenji Sato , Toshinori Yoshimuta , Toshiyuki Sato
发明人： Junichi Suzuki , Nobuya Nagafune , Kenji Sato , Toshinori Yoshimuta , Toshiyuki Sato
IPC分类号： G01T1/24 , H01L21/00 , H01L23/34 , H01L27/14 , H01L31/00 , H01L31/18 , H04N5/32
CPC分类号： H01L31/0203 , H01L21/6715 , H01L2924/0002 , H01L2924/00
摘要： Because a restricting plate 27 is disposed using a spacer 25, an upper plate 15 is allowed to expand upward when resin is injected, but unnecessary overexpansion is restricted by the restricting plate 27. Therefore the injection of a slightly larger amount of resin 37 does not cause a distortion or breakage of the upper plate 15 and a large amount resin 37 than the predetermined amount may be injected. As a result, damage to the upper plate 15 by the injection of the resin 37 and damage to the upper plate 15, the exfoliation of the radiation sensitive layer, and the like caused by the curing of the resin 37 may be prevented and damage to the flat panel radiation detector 1 may be prevented thereby.
摘要翻译：由于使用间隔件25设置限位板27，所以当注入树脂时允许上板15向上膨胀，但限制板27限制了不必要的过度膨胀。因此，注入稍大量的树脂37不会引起上板15的变形或断裂，并且可以注入大于预定量的大量树脂37。结果，可以防止树脂37的注入和上板15的损坏对上板15的损伤，由树脂37的固化引起的辐射敏感层的剥离等，可以防止平板辐射检测器1。

7. 发明授权

US06635860B2 Radiation detector 有权
公开(公告)号：US06635860B2
公开(公告)日：2003-10-21
申请号：US10118293
申请日：2002-04-08
申请人： Kenji Sato , Toshinori Yoshimuta , Satoshi Tokuda
发明人： Kenji Sato , Toshinori Yoshimuta , Satoshi Tokuda
IPC分类号： H01L3100
CPC分类号： H01L31/0216 , H01L27/14676 , H01L31/0203
摘要： A solvent-resistant and carrier-selective high-resistance film is formed between a radiation sensitive type amorphous semiconductor thick film, and a voltage application electrode in such a manner as to cover the entire surface of the amorphous semiconductor thick film. Moreover, an insulating auxiliary plate member having a thermal expansion coefficient, which is comparable to that of an insulating substrate, is formed on the surface of the top layer, in which the amorphous semiconductor thick film, the solvent-resistant and carrier-selective high-resistance film, and the voltage application electrode are formed, and fixed thereonto by using a high-withstand-voltage hardening synthetic resin in such a way as to cover the surface of the top layer.

8. 发明授权

US09985150B2 Radiation detector and method of manufacturing the same 有权
公开(公告)号：US09985150B2
公开(公告)日：2018-05-29
申请号：US13639318
申请日：2011-02-21
申请人： Toshinori Yoshimuta , Satoshi Tokuda , Koichi Tanabe , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
发明人： Toshinori Yoshimuta , Satoshi Tokuda , Koichi Tanabe , Hiroyuki Kishihara , Masatomo Kaino , Akina Yoshimatsu , Toshiyuki Sato , Shoji Kuwabara
IPC分类号： H01L31/0236 , H01L27/146
CPC分类号： H01L31/0236 , H01L27/14636 , Y02E10/50
摘要： A graphite substrate is processed to have surface unevenness in a range of 1 μm to 8 μm. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.

9. 发明授权

US08563940B2 Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus 有权
标题翻译：辐射检测器制造方法，放射线检测器和放射线照相设备
公开(公告)号：US08563940B2
公开(公告)日：2013-10-22
申请号：US13262098
申请日：2009-04-03
申请人： Satoshi Tokuda , Tamotsu Okamoto , Hiroyuki Kishihara , Masatomo Kaino , Toshinori Yoshimuta , Koichi Tanabe
发明人： Satoshi Tokuda , Tamotsu Okamoto , Hiroyuki Kishihara , Masatomo Kaino , Toshinori Yoshimuta , Koichi Tanabe
IPC分类号： H01L27/146
CPC分类号： G01T1/24 , H01L31/115
摘要： According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.
摘要翻译：根据辐射检测器的制造方法，本发明的放射线检测器和射线照相设备采用Cl掺杂的CdZnTe作为转化层，Cl浓度设定为1ppm〜3ppm（重量），Zn浓度设定为1 mol％至5mol％。这可以形成辐射探测器最佳的转换层。因此，可以提供放射线检测器制造方法，放射线检测器和射线照相设备，其可以通过适当浓度的Cl掺杂来保护晶粒边界的缺陷水平，并且可以进一步保持对辐射的积分灵敏度，同时减少漏电流，通过适当浓度的Zn掺杂。

10. 发明授权

US07473895B2 Two-dimensional image detector, and radiographic apparatus using the two-dimensional image detector 有权
标题翻译：二维图像检测器和使用二维图像检测器的放射线照相设备
公开(公告)号：US07473895B2
公开(公告)日：2009-01-06
申请号：US11791173
申请日：2005-11-29
申请人： Narumi Yamaguchi , Toshinori Yoshimuta
发明人： Narumi Yamaguchi , Toshinori Yoshimuta
IPC分类号： G01J1/00
CPC分类号： H04N5/2253 , A61B6/4233 , H01L27/14618 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to an image detector having a housing of protrusive sectional shape. A difference in thickness between a central portion and peripheral portions of the housing is made shorter than the length of rubber cushions. A plurality of rubber cushions are attached to two rectangular bottoms of the peripheral portions made thinner than the central portion. Through these rubber cushions, the image detector is fixed to an image detector holder. As a result, the present invention reduces an inconvenience that, when an image detector is fixed to an image detector holder through rubber cushions, the thickness of the image detector including the rubber cushions increases by an amount corresponding to the height of the rubber cushions.
摘要翻译：本发明涉及具有突出截面形状的壳体的图像检测器。壳体的中心部分和周边部分之间的厚度差要比橡胶垫的长度短。多个橡胶垫连接到比中心部分更薄的外围部分的两个矩形底部。通过这些橡胶垫，图像检测器固定在图像检测器支架上。结果，本发明减少了当图像检测器通过橡胶垫固定到图像检测器支架时的不便之处，包括橡胶垫的图像检测器的厚度增加了与橡胶垫的高度相对应的量。

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