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    • 8. 发明授权
    • Light or radiation detector manufacturing method
    • 光或辐射探测器的制造方法
    • US07736941B2
    • 2010-06-15
    • US12441312
    • 2007-04-12
    • Satoshi TokudaTamotsu Okamoto
    • Satoshi TokudaTamotsu Okamoto
    • H01L21/20
    • H01L27/14683G01T1/24H01L27/14634H01L31/1892Y02E10/50
    • In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.
    • 在本发明的光或辐射检测器制造方法和光或辐射检测器中,当形成半导体时,通过气相沉积在半导体基板上以预定的厚度形成半导体,然后用虚拟基板代替石墨基板 是支撑衬底,并且半导体通过气相沉积继续在石墨衬底上形成。 通过气相沉积在虚设基板上形成预定厚度的半导体的时间是初始状态,并且在虚设基板上形成不可避免地形成的缺陷膜。 随后,在作为替换的石墨基板上形成不处于初始状态的半导体。 这实现了具有比现有技术更高质量的半导体的检测器。 以这种方式制造的半导体至少在厚度方向上连续地形成。
    • 10. 发明授权
    • Method of producing a radiation detector with a polysilicon converting layer
    • 制造具有多晶硅转换层的放射线检测器的方法
    • US07498189B2
    • 2009-03-03
    • US11071165
    • 2005-03-04
    • Toshiyuki SatoSatoshi Tokuda
    • Toshiyuki SatoSatoshi Tokuda
    • H01L21/00
    • H04N5/32H01L27/14609H01L27/14665
    • In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element electrodes connected to source electrodes of the high-speed switching elements, and charge storage capacitances disposed between the picture element electrodes and ground on a insulating base plate. Then, a converting layer is formed at upper portions of the respective picture element electrodes at a temperature between 300° C. and 800° C. to generate a pair of electron-hole by absorbing light or radiation. The active matrix board is formed of a poly-silicon process board.
    • 在制造放射线检测器的方法中,形成有源矩阵基板,包括以二维格子形状排列的栅极线和数据线,多个高速开关元件,设置在各个格子点上并连接到栅极线 连接到高速开关元件的源极的数据线,像素电极以及设置在像素电极之间并在绝缘基板上接地的电荷存储电容。 然后,在300℃和800℃之间的温度下,在各个像素电极的上部形成转换层,以通过吸收光或辐射产生一对电子空穴。 有源矩阵板由多晶硅处理板形成。