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1. 发明授权

US5446304A Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate 失效
标题翻译：绝缘栅型场效应晶体管具有与主栅极不同的衬底间距的底栅
公开(公告)号：US5446304A
公开(公告)日：1995-08-29
申请号：US314929
申请日：1994-09-29
申请人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/78 , H01L29/786 , H01L29/76 , H01L27/01 , H01L29/04
CPC分类号： H01L27/092 , H01L29/78645 , H01L29/78648
摘要： An active layer of an insulated-gate type field effect transistor is formed by a thin film of an intrinsic polycrystalline semiconductor and a source electrode and a drain electrode are formed on the active layer. A source region and a drain region are not formed in the active layer. A main gate electrode is formed on a gate insulating film of a portion between the source electrode and the drain electrode. Subgate electrodes are formed on the gate insulating film in a portion between the source electrode and the main gate electrode and a portion between the drain electrode and the main gate electrode, respectively.
摘要翻译：绝缘栅型场效应晶体管的有源层由本征多晶半导体薄膜形成，源电极和漏电极形成在有源层上。源极区域和漏极区域不形成在有源层中。主栅极形成在源电极和漏电极之间的部分的栅极绝缘膜上。在门极绝缘膜上分别在源电极和主栅电极之间的部分以及漏电极和主栅电极之间的部分形成栅极电极。

2. 发明授权

US5431126A Method of forming semiconductor crystal and semiconductor device 失效
标题翻译：形成半导体晶体和半导体器件的方法
公开(公告)号：US5431126A
公开(公告)日：1995-07-11
申请号：US79553
申请日：1993-06-22
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Gosain D. Pal , Atsushi Kono , Jonathan Westwater , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Gosain D. Pal , Atsushi Kono , Jonathan Westwater , Setsuo Usui
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786 , C30B13/30
CPC分类号： H01L21/84 , H01L21/2026
摘要： A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.
摘要翻译：具有至少一个边缘的薄半导体膜形成在其材料与薄半导体膜的材料不同的基底上。例如，将激光束施加到半导体膜，从而熔化包括边缘的半导体膜，从而使边缘向上凸起。包含边缘的熔融半导体膜被固化，因此再结晶成半导体晶体。在施加激光束之前，可以在薄半导体膜上形成多个隔开的反射膜。可以由半导体晶体制造包括薄膜晶体管，太阳能电池和双极晶体管的各种半导体器件。

3. 发明授权

US5889292A Semiconductor device having an improved thin film transistor 失效
标题翻译：具有改进的薄膜晶体管的半导体器件
公开(公告)号：US5889292A
公开(公告)日：1999-03-30
申请号：US571728
申请日：1995-12-13
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L29/04 , H01L27/108 , H01L29/76 , H01L31/0328
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

4. 发明授权

US5591653A Method of manufacturing Si-Ge thin film transistor 失效
标题翻译：制造Si-Ge薄膜晶体管的方法
公开(公告)号：US5591653A
公开(公告)日：1997-01-07
申请号：US440645
申请日：1995-05-15
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L21/336 , H01L29/786 , H01L21/84
CPC分类号： H01L29/66742 , H01L29/78684 , Y10S148/058
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

5. 发明授权

US5304250A Plasma system comprising hollow mesh plate electrode 失效
标题翻译：等离子体系包括中空网板电极
公开(公告)号：US5304250A
公开(公告)日：1994-04-19
申请号：US909660
申请日：1992-07-07
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45514 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J2237/3325
摘要： A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area. If the reaction product is a deposit-like substance, plasma CVD becomes possible, while if of the etching type, plasma etching becomes possible.
摘要翻译：一种等离子体系统，其消除由等离子体中的带电粒子产生的损伤，并能够在大面积基板上进行均匀的等离子体CVD和等离子体蚀刻，其中具有多个孔的网板被放置在等离子体产生室以及基板处理室，其保持基板，将高频电场施加在等离子体产生室中的上部电极与网板之间，以通过电放电解除等离子体形成气体，从而产生等离子体。由此，等离子体与基板隔离。另一方面，源气体供给口在网板的孔附近打开，从那里引入的源气体通过孔与等离子体接触，从而可以在广泛的区域均匀地制造反应产物。如果反应产物是沉积物状物质，则可以进行等离子体CVD，而如果是蚀刻型，则可以进行等离子体蚀刻。

6. 发明授权

US5910015A Thin film transistor and manufacturing method of the thin film transistor 失效
标题翻译：薄膜晶体管及薄膜晶体管的制造方法
公开(公告)号：US5910015A
公开(公告)日：1999-06-08
申请号：US25616
申请日：1998-02-18
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L21/84
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

7. 发明授权

US5726487A Semiconductor device having an improved thin film transistor 失效
公开(公告)号：US5726487A
公开(公告)日：1998-03-10
申请号：US331273
申请日：1994-10-28
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L29/76 , H01L29/22 , H01L31/117
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

8. 发明授权

US5145808A Method of crystallizing a semiconductor thin film 失效
标题翻译：使半导体薄膜结晶的方法
公开(公告)号：US5145808A
公开(公告)日：1992-09-08
申请号：US747708
申请日：1991-08-20
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
IPC分类号： H01L21/20 , H01L21/268
CPC分类号： H01L21/2026 , Y10S117/904 , Y10S148/093 , Y10S148/134
摘要： A method of crystallizing a semiconductor thin film moves a laser beam emitted by a pulse laser in a first direction to irradiate the semiconductor tin film with the laser beam for scanning. The laser beam is split into a plurality of secondary laser beams of a width smaller than the pitch of step feed, respectively having different energy densities forming a stepped energy density distribution decreasing from the middle toward the opposite ends thereof with respect to the direction of step feed. The energy density of the first secondary laser beam corresponding to the middle of the energy distribution is higher than a threshold energy density, i.e., the minimum energy density that will melt the semiconductor thin film to make the same amorphous, and lower than a roughening energy density, i.e., the minimum energy density that will roughen the surface of the semiconductor thin film, the energy density of each of the secondary laser beams on the front side of the first secondary laser beam with respect to the direction of step feed is lower than a melting energy density, i.e., the minimum energy density of each of the secondary laser beams on the back side of the first secondary laser beam with respect to the direction of step feed is higher than the melting energy density and lower than and nearly equal to the threshold energy density.
摘要翻译：使半导体薄膜结晶的方法使由脉冲激光器发射的激光沿第一方向移动，以用激光束照射半导体锡膜进行扫描。激光束被分成多个宽度小于阶梯进给节距的次级激光束，分别具有不同的能量密度，形成阶梯能量密度分布，相对于台阶方向从中间向相对端减小饲料。对应于能量分布中间的第一次级激光束的能量密度高于阈值能量密度，即将熔化半导体薄膜以使其成为相同无定形且低于粗糙能量的最小能量密度密度，即将使粗糙化半导体薄膜的表面的最小能量密度，相对于步进进给方向，第一次级激光束正面上的每个次级激光束的能量密度低于熔融能量密度，即第一次级激光束的背侧上的每个次级激光束相对于步进进给方向的最小能量密度高于熔融能量密度，并且低于并且几乎等于阈值能量密度。

9. 发明授权

US06458715B2 Process of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的工艺
公开(公告)号：US06458715B2
公开(公告)日：2002-10-01
申请号：US09779766
申请日：2001-02-08
申请人： Naoki Sano , Masaki Hara , Mitsunobu Sekiya , Toshiyuki Sameshima
发明人： Naoki Sano , Masaki Hara , Mitsunobu Sekiya , Toshiyuki Sameshima
IPC分类号： H01L21265
CPC分类号： H01L21/3105 , H01L31/1864 , Y02E10/50 , Y02P70/521 , Y10S438/909
摘要： A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.
摘要翻译：可以通过重整绝缘膜和半导体来稳定地获得目标半导体器件。在制造半导体器件的过程中，在包含水气体（H 2 O）的气氛中，在20〜400℃的温度范围内退火半导体的退火处理后，半导体和绝缘膜中的至少一个被重整），分压为1乇至饱和蒸汽压，退火时间为15秒至20小时。

10. 发明授权

US5648276A Method and apparatus for fabricating a thin film semiconductor device 失效
标题翻译：用于制造薄膜半导体器件的方法和装置
公开(公告)号：US5648276A
公开(公告)日：1997-07-15
申请号：US250679
申请日：1994-05-26
申请人： Masaki Hara , Naoki Sano , Toshiyuki Sameshima , Atsushi Kohno , Mitsunobu Sekiya , Yasuhiro Kanaya , Michihisa Yano
发明人： Masaki Hara , Naoki Sano , Toshiyuki Sameshima , Atsushi Kohno , Mitsunobu Sekiya , Yasuhiro Kanaya , Michihisa Yano
IPC分类号： H01L21/205 , H01L21/20 , H01L21/324 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L21/67207 , H01L29/4908 , H01L29/66757 , H01L29/78618 , H01L29/78675 , H01L29/78696
摘要： A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber. The method and apparatus can fabricate thin film semiconductor devices having a high performance and a high reliability with a good uniformity by making a clean and high quality semiconductor/insulator interface or by hydrogenating a semiconductor thin film without changes in electrical conductivity.
摘要翻译：公开了一种用于制造薄膜半导体器件的方法和装置。在晶片上制造的a-Si：H薄膜通过在激光退火室中照射激光束而产生多晶Si薄膜而进行熔融再结晶。然后将晶片输送到CVD室，而不将其暴露于外部空气。在CVD室中的多晶Si薄膜的清洁表面上产生栅极绝缘膜。在另一种情况下，a-Si：H薄膜在激光退火室中熔融再结晶以产生多晶Si薄膜，然后将晶片输送到氢化室，而不暴露于外部空气。此后，多晶Si薄膜在氢化室中被等离子体氢化。该方法和装置可以通过制造清洁且高质量的半导体/绝缘体界面或通过不导电导电性的变化来氢化半导体薄膜来制造具有高性能和高可靠性的薄膜半导体器件。

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