专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100317835A1 Anti-Adam-15 Antibodies and Utilization of the Same 有权
标题翻译：抗Adam-15抗体及其利用
公开(公告)号：US20100317835A1
公开(公告)日：2010-12-16
申请号：US12867449
申请日：2009-02-12
申请人： Toshimitsu Uede , Yutaka Matsui
发明人： Toshimitsu Uede , Yutaka Matsui
IPC分类号： C07K16/18 , C07K16/30 , C07H21/04 , C12N15/63 , C12N5/16 , C12P21/04
CPC分类号： C07K16/40 , A61K2039/505 , C07K14/8146 , C07K16/2842 , C07K16/2848 , C07K16/2896 , C07K2317/565 , C12N9/6416 , G01N2333/96486
摘要： A remedy for cancer obtained from a different viewpoint from the viewpoints employed in developing the existing anticancer drugs, i.e., focusing on the intercellular adhesion of cancer cells. Namely, provided is a remedy for cancer with fewer side effects which inhibits the proliferation of cancer cells and the intercellular adhesion of cancer cells. Also provided is an antibody, which recognizes the disintegrin domain of ADAM-15 and is usable as an anticancer agent, and so on. An antibody, which recognizes the disintegrin domain of ADAM-15 but does not recognize the RGD sequence or loop region in the disintegrin domain of ADAM-15, and so on; an antibody, which inhibits ADAM-15 and integrin αvβ3-dependent cell adhesion, and so on; and an antibody, which inhibits ADAM-15 and integrin αvβ1-dependent cell adhesion, and so on.
摘要翻译：从用于开发现有抗癌药物的观点来看，从不同观点获得的癌症治疗方法，即关注癌细胞的细胞间粘附。即，提供抑制癌细胞增殖和癌细胞的细胞间粘附的副作用较少的癌症的治疗方法。还提供了识别ADAM-15的去整合素结构域并可用作抗癌剂的抗体等。识别ADAM-15的整合素结构域但不识别ADAM-15的整合素结构域中的RGD序列或环区的抗体等等; 抗体，其抑制ADAM-15和整合素αv＆bgr 3依赖细胞粘附等; 和抗体，其抑制ADAM-15和整合素αv＆bgr1依赖性细胞粘附等。

2. 发明授权

US08461310B2 Anti-ADAM-15 antibodies and utilization of the same 有权
标题翻译：抗ADAM-15抗体与利用相同
公开(公告)号：US08461310B2
公开(公告)日：2013-06-11
申请号：US12867449
申请日：2009-02-12
申请人： Toshimitsu Uede , Yutaka Matsui
发明人： Toshimitsu Uede , Yutaka Matsui
IPC分类号： C07K16/00
CPC分类号： C07K16/40 , A61K2039/505 , C07K14/8146 , C07K16/2842 , C07K16/2848 , C07K16/2896 , C07K2317/565 , C12N9/6416 , G01N2333/96486
摘要： A remedy for cancer obtained from a different viewpoint from the viewpoints employed in developing the existing anticancer drugs, i.e., focusing on the intercellular adhesion of cancer cells. Namely, provided is a remedy for cancer with fewer side effects which inhibits the proliferation of cancer cells and the intercellular adhesion of cancer cells. Also provided is an antibody, which recognizes the disintegrin domain of ADAM-15 and is usable as an anticancer agent, and so on. An antibody, which recognizes the disintegrin domain of ADAM-15 but does not recognize the RGD sequence or loop region in the disintegrin domain of ADAM-15, and so on; an antibody, which inhibits ADAM-15 and integrin αvβ3-dependent cell adhesion, and so on; and an antibody, which inhibits ADAM-15 and integrin αvβ1-dependent cell adhesion, and so on.
摘要翻译：从用于开发现有抗癌药物的观点来看，从不同观点获得的癌症治疗方法，即关注癌细胞的细胞间粘附。即，提供抑制癌细胞增殖和癌细胞的细胞间粘附的副作用较少的癌症的治疗方法。还提供了识别ADAM-15的去整合素结构域并可用作抗癌剂的抗体等。识别ADAM-15的整合素结构域但不识别ADAM-15的整合素结构域中的RGD序列或环区的抗体等等; 一种抗体，其抑制ADAM-15和整合素alphavbeta3依赖性细胞粘附等; 和抗体，其抑制ADAM-15和整合素α噬菌体依赖性细胞粘附等。

3. 发明授权

US09362090B2 Plasma processing apparatus, plasma processing method, and storage medium 有权
标题翻译：等离子体处理装置，等离子体处理方法和存储介质
公开(公告)号：US09362090B2
公开(公告)日：2016-06-07
申请号：US12973563
申请日：2010-12-20
申请人： Masanobu Honda , Yutaka Matsui , Manabu Sato
发明人： Masanobu Honda , Yutaka Matsui , Manabu Sato
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J7/24 , H05B31/26 , H01J37/32 , H01L21/311 , H01L21/02 , H01L21/67
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/3255 , H01J37/32706 , H01J37/32862 , H01J37/32926 , H01L21/02532 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.
摘要翻译：一种使聚合物能够从电绝缘电极移除的等离子体处理装置。等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。射频电源连接到基座。上电极板与基板处理室的壁和基座电绝缘。直流电源连接到上电极板。等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

4. 发明授权

US08147061B2 Recording apparatus 有权
标题翻译：记录装置
公开(公告)号：US08147061B2
公开(公告)日：2012-04-03
申请号：US12500332
申请日：2009-07-09
申请人： Yasushi Utsugi , Hiroto Miyauchi , Yutaka Matsui , Takashi Mizumoto
发明人： Yasushi Utsugi , Hiroto Miyauchi , Yutaka Matsui , Takashi Mizumoto
IPC分类号： B41J29/13 , B41J29/38 , B41J29/377
CPC分类号： B41J29/02 , B41J29/377
摘要： A recording apparatus includes: a housing which constitutes an appearance of a recording apparatus body; and an electronic substrate which is vertically disposed along an inner side surface of the housing. Here, an air supply hole and an air exhaust hole are formed on a side surface portion of the housing corresponding to a lower portion and an upper portion of the electronic substrate so that an air-flow path for external air is formed in an installation region in which the electronic substrate is provided.
摘要翻译：记录装置包括：构成记录装置主体外观的壳体; 以及沿壳体的内侧表面垂直设置的电子基板。这里，在壳体的与电子基板的下部和上部相对应的侧表面部分处形成有供气孔和排气孔，使得在安装区域中形成用于外部空气的空气流动路径其中设置电子基板。

5. 发明申请

US20070068798A1 Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component 有权
标题翻译：等离子体处理室，等离子体处理室，等离子体处理装置和等离子体处理室组件的结构
公开(公告)号：US20070068798A1
公开(公告)日：2007-03-29
申请号：US11529372
申请日：2006-09-29
申请人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
发明人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
IPC分类号： C25D17/00 , F02M37/22
CPC分类号： H01J37/32431 , F02M27/042 , H01J37/32568
摘要： A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.
摘要翻译：一种用于等离子体处理室的结构，其可以控制其中的电位并简化等离子体处理室的结构。气体导入花洒34设置在等离子体处理室10中，包括具有用于接收半导体晶片W的处理空间S的容器11和设置在容器11中的用于将接收的半导体晶片W安装在其上的基座12。基座12连接到高频电源20和46.气体导入花洒34的电极支架39电接地。气体导入喷头34的电浮置顶部电极板38设置在电极支撑件39和处理空间S之间。顶部电极板38具有暴露于处理空间S的表面。绝缘膜48由电介质材料并且设置在电极支撑件39和顶部电极板38之间。

6. 发明申请

US20060196847A1 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060196847A1
公开(公告)日：2006-09-07
申请号：US11365676
申请日：2006-03-02
申请人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
发明人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32972 , H01L21/02063
摘要： A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.
摘要翻译：等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

7. 发明授权

US06931379B1 IC card system and IC card 失效
标题翻译： IC卡系统和IC卡
公开(公告)号：US06931379B1
公开(公告)日：2005-08-16
申请号：US09639751
申请日：2000-08-15
申请人： Akiko Sato , Yusuke Mishina , Masaru Ohki , Satomi Baba , Yutaka Matsui
发明人： Akiko Sato , Yusuke Mishina , Masaru Ohki , Satomi Baba , Yutaka Matsui
IPC分类号： B42D15/10 , G06F21/22 , G06K17/00 , G06K19/07 , G07F7/10 , G09C1/00 , G06F17/60
CPC分类号： G07F7/1008 , G06Q20/3552
摘要： An IC card that allows a service provider doing a business of loading an application into the IC card to dynamically load the application into the IC card safely after the issuance of the IC card without making a contract directly with a card issuer issuing the IC card and without establishing a communication with the card issuer. The card issuer issuing the IC card hands over an encryption key in advance to a third party other than the card issuer in order to entrust the third party with work to authenticate an application to be loaded or to allow the third party to function as an agent on behalf of the card issuer. The card issuer issues an agent certification to the third party to be used as evidence showing that the third party is an agent representing the card issuer.
摘要翻译：一种IC卡，其允许服务提供者在IC卡发行之后安全地将应用程序加载到IC卡中以将动作加载到IC卡中，而不直接与发行IC卡的发卡机构直接签订合同; 而不与卡发行商建立通信。发行IC卡的发卡机构预先将卡加密密钥交给除卡片发行者之外的第三方，以委托第三方进行工作来认证要加载的应用或允许第三方作为代理人代卡发卡机构。发卡机构向第三方发放代理证明，作为证明第三方是代理发卡机构的代理人的证据。

8. 发明授权

US5653627A Flat diamond drill 失效
标题翻译：平金刚石钻
公开(公告)号：US5653627A
公开(公告)日：1997-08-05
申请号：US467676
申请日：1995-06-06
申请人： Mizuki Nishi , Yukihiro Watanabe , Mamoru Kitamura , Yutaka Matsui
发明人： Mizuki Nishi , Yukihiro Watanabe , Mamoru Kitamura , Yutaka Matsui
IPC分类号： B23B51/00 , B23B51/10 , B23C5/10 , B24D7/18 , B28D1/14 , B28D1/18 , B24B5/06 , B23B27/20
CPC分类号： B23B51/00 , B23B51/10 , B23C5/10 , B24D7/18 , B28D1/146 , B28D1/18 , B28D1/186 , B23B2226/31 , B23B2226/45 , B23B2251/50 , B23C2210/03 , Y10T408/81 , Y10T408/9093
摘要： A diamond drill consists of a core and a pair of abrasive diamond tips which are joined to constitute a diamond tip and core assembly in the form of a flat plate. The diamond tips have chamfering sections for providing a cutting blade of a diameter smaller than that of a cutting blade provided by finishing blade sections thereof. The chamfering sections can be used not only for chamfering an edge of a glass plate defining an opening but for cutting a non-circular opening. In another embodiment, an abrasive diamond ring is installed on a shank and used for chamfering an edge of a glass plate defining an opening or for cutting a non-circular opening having a small corner.
摘要翻译：金刚石钻头由芯和一对研磨金刚石尖端组成，其结合成构成平板形式的金刚石尖端和芯组件。金刚石尖端具有倒角部分，用于提供直径小于由其精加工刀片部分提供的切割刀片的直径的切割刀片。倒角部分不仅可用于倒角限定开口的玻璃板的边缘，而且用于切割非圆形开口。在另一个实施例中，研磨金刚石环安装在柄上并用于倒角限定开口的玻璃板的边缘或用于切割具有小角的非圆形开口。

9. 发明申请

US20070186952A1 METHOD OF CLEANING SUBSTRATE PROCESSING CHAMBER, STORAGE MEDIUM, AND SUBSTRATE PROCESSING CHAMBER 有权
标题翻译：清洗基板加工室，储存介质和基板加工室的方法
公开(公告)号：US20070186952A1
公开(公告)日：2007-08-16
申请号：US11671223
申请日：2007-02-05
申请人： Masanobu HONDA , Yutaka Matsui
发明人： Masanobu HONDA , Yutaka Matsui
IPC分类号： B08B6/00 , G06F19/00 , C23F1/00 , C23C16/00
CPC分类号： B08B7/0035 , H01J37/32862 , Y10S438/905
摘要： A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber 11 has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber 11 has an upper electrode plate 38 that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate 38 using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.
摘要翻译：一种能够防止在处理室内部组件的表面上形成氧化膜的基板处理室的清洗方法。衬底处理室11中具有转移晶片W的处理空间S，并且在处理空间S中对晶片W进行反应离子蚀刻。衬底处理室11具有上电极板38，上电极板38包括硅和其下表面暴露于处理空间S.使用从引入到处理空间S中的氧气产生的氧自由基，在上电极板38上进行干洗。在上电极板上进行氧化物去除处理 38使用从引入到处理空间S中的四氟化碳气体产生的氟离子和氟自由基。

10. 发明授权

US5874141A Injection/blow molded plastic container and method 失效
标题翻译：注塑/吹塑塑料容器及方法
公开(公告)号：US5874141A
公开(公告)日：1999-02-23
申请号：US627854
申请日：1996-04-03
申请人： Yutaka Matsui
发明人： Yutaka Matsui
IPC分类号： B29B11/08 , B29C49/00 , B29C49/06 , B29C49/08 , B29C51/10 , B29L22/00 , B29D22/00 , B29C49/02
CPC分类号： B29C51/10 , B29C49/0073 , B29B2911/1402 , B29B2911/14026 , B29B2911/14033 , B29B2911/1404 , B29B2911/14326 , B29B2911/14331 , B29B2911/14333 , B29B2911/14337 , B29B2911/14426 , B29B2911/1444 , B29B2911/14486 , B29C2791/007 , B29C49/06 , Y10T428/1352 , Y10T428/139
摘要： A plastic container is formed by injection and blow molding wherein the injection molded body has an annular shoulder, an upper neck and a bottom wall with a central flat portion of substantially the same thickness as the wall of said body. An enlarged annular corner portion connects the bottom wall to the body and extends downwardly. The annular corner is sufficiently thick so as to form a substantially solid rim after bi-axial stretching during blow molding. The plastic parison for forming the container includes a body with an annular shoulder and an upper neck and also with the bottom wall having a central flat portion of substantially the same thickness as the body. The enlarged annular corner portion of the parison also connects to the body and extends downwardly to form a substantially solid rim. The thickness of the annular corner is sufficient to keep the annular corner from having a cavity formed in it during bi-axial stretching. In the method the molded body, annular shoulder, upper neck and the bottom wall are maintained with their relative thicknesses. The annular corner portion is sufficiently enlarged to form a substantially solid rim during stretching. The method is carried out so that the container exhibits the favorable characteristics of injection and blow molding. The blow molding is characterized by bi-axial stretching of the body and uni-axial stretching of the bottom wall. Heat is applied to the mold during blow molding and air is cycled in and out of the container for curing.
摘要翻译：通过注射和吹塑形成塑料容器，其中注射成型体具有环形肩部，上颈部和底壁，其中心平坦部分具有与所述主体的壁基本相同的厚度。扩大的环形角部分将底壁连接到主体并向下延伸。环形角部足够厚，以便在吹塑过程中双向拉伸后形成基本上实心的边缘。用于形成容器的塑料型坯包括具有环形肩部和上颈部的本体，并且底壁具有与主体基本相同厚度的中心平坦部分。型坯的扩大的环形角部分也连接到主体并向下延伸以形成基本上实心的边缘。环形角部的厚度足以在双向拉伸期间保持环形角部不具有形成在其中的空腔。在该方法中，成型体，环形肩部，上颈部和底壁保持其相对厚度。环形拐角部分被充分地扩大，以在拉伸期间形成基本上实心的边缘。该方法进行，使得容器呈现出有利的注射和吹塑成型特性。吹塑成型的特征在于主体的双向拉伸和底壁的单轴拉伸。在吹塑过程中将热量施加到模具上，并且将空气循环进出容器以进行固化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式