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1. 发明申请

US20070068798A1 Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component 有权
标题翻译：等离子体处理室，等离子体处理室，等离子体处理装置和等离子体处理室组件的结构
公开(公告)号：US20070068798A1
公开(公告)日：2007-03-29
申请号：US11529372
申请日：2006-09-29
申请人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
发明人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
IPC分类号： C25D17/00 , F02M37/22
CPC分类号： H01J37/32431 , F02M27/042 , H01J37/32568
摘要： A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.
摘要翻译：一种用于等离子体处理室的结构，其可以控制其中的电位并简化等离子体处理室的结构。气体导入花洒34设置在等离子体处理室10中，包括具有用于接收半导体晶片W的处理空间S的容器11和设置在容器11中的用于将接收的半导体晶片W安装在其上的基座12。基座12连接到高频电源20和46.气体导入花洒34的电极支架39电接地。气体导入喷头34的电浮置顶部电极板38设置在电极支撑件39和处理空间S之间。顶部电极板38具有暴露于处理空间S的表面。绝缘膜48由电介质材料并且设置在电极支撑件39和顶部电极板38之间。

2. 发明授权

US07895970B2 Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component 有权
标题翻译：等离子体处理室，等离子体处理室，等离子体处理装置和等离子体处理室组件的结构
公开(公告)号：US07895970B2
公开(公告)日：2011-03-01
申请号：US11529372
申请日：2006-09-29
申请人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
发明人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32431 , F02M27/042 , H01J37/32568
摘要： A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.
摘要翻译：一种用于等离子体处理室的结构，其可以控制其中的电位并简化等离子体处理室的结构。气体导入花洒34设置在等离子体处理室10中，包括具有用于接收半导体晶片W的处理空间S的容器11和设置在容器11中的用于将接收的半导体晶片W安装在其上的基座12。基座12连接到高频电源20和46.气体导入花洒34的电极支架39电接地。气体导入喷头34的电浮置顶部电极板38设置在电极支撑件39和处理空间S之间。顶部电极板38具有暴露于处理空间S的表面。绝缘膜48由电介质材料并且设置在电极支撑件39和顶部电极板38之间。

3. 发明授权

US08157952B2 Plasma processing chamber, potential controlling apparatus, potential controlling method, program for implementing the method, and storage medium storing the program 有权
标题翻译：等离子体处理室，电位控制装置，电位控制方法，实现该方法的程序和存储程序的存储介质
公开(公告)号：US08157952B2
公开(公告)日：2012-04-17
申请号：US11442287
申请日：2006-05-30
申请人： Masanobu Honda , Toshihiro Hayami
发明人： Masanobu Honda , Toshihiro Hayami
IPC分类号： H01J7/24
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.
摘要翻译：一种等离子体处理室，其能够以简单的结构容易地控制附着的聚合物的量。容器11容纳半导体晶片W.基座12设置在容器11中并连接到下电极射频电源20.在等离子体处理室10中，可以在半导体晶片W上执行RIE和灰化使用从加入到容器11中的加工气体产生的等离子体。侧壁构件45设置在容器11中并暴露于等离子体。根据执行RIE和灰化的方式将侧壁构件45的电位设置为浮动电位或接地电位。

4. 发明申请

US20060273733A1 Plasma processing chamber, potential controlling apparatus, potential controlling method, program for implementing the method, and storage medium storing the program 有权
标题翻译：等离子体处理室，电位控制装置，电位控制方法，实现该方法的程序和存储程序的存储介质
公开(公告)号：US20060273733A1
公开(公告)日：2006-12-07
申请号：US11442287
申请日：2006-05-30
申请人： Masanobu Honda , Toshihiro Hayami
发明人： Masanobu Honda , Toshihiro Hayami
IPC分类号： H01J7/24
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.
摘要翻译：一种等离子体处理室，其能够以简单的结构容易地控制附着的聚合物的量。容器11容纳半导体晶片W.基座12设置在容器11中并连接到下电极射频电源20。在等离子体处理室10中，可以使用从引入到容器11中的处理气体产生的等离子体在半导体晶片W上进行RIE和灰化。侧壁构件45设置在容器11中并暴露于等离子体。根据执行RIE和灰化的方式将侧壁构件45的电位设置为浮动电位或接地电位。

5. 发明授权

US08173036B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08173036B2
公开(公告)日：2012-05-08
申请号：US11365676
申请日：2006-03-02
申请人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
发明人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32972 , H01L21/02063
摘要： A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.
摘要翻译：等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

6. 发明授权

US08057603B2 Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber 有权
标题翻译：基板处理室，存储介质和基板处理室的清洗方法
公开(公告)号：US08057603B2
公开(公告)日：2011-11-15
申请号：US11671223
申请日：2007-02-05
申请人： Masanobu Honda , Yutaka Matsui
发明人： Masanobu Honda , Yutaka Matsui
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： B08B7/0035 , H01J37/32862 , Y10S438/905
摘要： A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber 11 has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber 11 has an upper electrode plate 38 that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate 38 using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.
摘要翻译：一种能够防止在处理室内部组件的表面上形成氧化膜的基板处理室的清洗方法。衬底处理室11中具有转移晶片W的处理空间S，并且在处理空间S中对晶片W进行反应离子蚀刻。衬底处理室11具有上电极板38，上电极板38包括硅和其下表面暴露于处理空间S.使用从引入到处理空间S中的氧气产生的氧自由基，在上电极板38上进行干洗。在上电极板上进行氧化物去除处理 38使用从引入到处理空间S中的四氟化碳气体产生的氟离子和氟自由基。

7. 发明授权

US07883632B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07883632B2
公开(公告)日：2011-02-08
申请号：US11689065
申请日：2007-03-21
申请人： Masanobu Honda , Yutaka Matsui , Manabu Sato
发明人： Masanobu Honda , Yutaka Matsui , Manabu Sato
IPC分类号： G06F19/00 , C23C14/32 , C23C14/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/3255 , H01J37/32706 , H01J37/32862 , H01J37/32926 , H01L21/02532 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.
摘要翻译：一种使聚合物能够从电绝缘电极移除的等离子体处理装置。等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。射频电源连接到基座。上电极板与基板处理室的壁和基座电绝缘。直流电源连接到上电极板。等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

8. 发明授权

US09362090B2 Plasma processing apparatus, plasma processing method, and storage medium 有权
标题翻译：等离子体处理装置，等离子体处理方法和存储介质
公开(公告)号：US09362090B2
公开(公告)日：2016-06-07
申请号：US12973563
申请日：2010-12-20
申请人： Masanobu Honda , Yutaka Matsui , Manabu Sato
发明人： Masanobu Honda , Yutaka Matsui , Manabu Sato
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J7/24 , H05B31/26 , H01J37/32 , H01L21/311 , H01L21/02 , H01L21/67
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/3255 , H01J37/32706 , H01J37/32862 , H01J37/32926 , H01L21/02532 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.
摘要翻译：一种使聚合物能够从电绝缘电极移除的等离子体处理装置。等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。射频电源连接到基座。上电极板与基板处理室的壁和基座电绝缘。直流电源连接到上电极板。等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

9. 发明申请

US20060196847A1 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060196847A1
公开(公告)日：2006-09-07
申请号：US11365676
申请日：2006-03-02
申请人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
发明人： Masanobu Honda , Tetsuji Sato , Shin Matsuura , Yutaka Matsui
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32972 , H01L21/02063
摘要： A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.
摘要翻译：等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

10. 发明授权

US08141514B2 Plasma processing apparatus, plasma processing method, and storage medium 失效
标题翻译：等离子体处理装置，等离子体处理方法和存储介质
公开(公告)号：US08141514B2
公开(公告)日：2012-03-27
申请号：US11686551
申请日：2007-03-15
申请人： Masanobu Honda , Naoki Matsumoto , Satoshi Tanaka , Yutaka Matsui
发明人： Masanobu Honda , Naoki Matsumoto , Satoshi Tanaka , Yutaka Matsui
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32532 , H01J37/32082 , H01J37/32623 , H01L21/3065
摘要： A plasma processing apparatus having a substrate processing chamber, which enables leakage of plasma into an exhaust space to be prevented. The substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an exhaust space for exhausting gas out of the processing space, and an exhaust flow path that communicates the exhaust space and the processing space together. The plasma processing apparatus further has a grounding component that is electrically grounded and is disposed in the exhaust flow path. The grounding component has a conducting portion made of a conductive material, and the conducting portion has an exposed area exposed to the exhaust flow path in a range of 100 to 1000 cm2.
摘要翻译：一种具有基板处理室的等离子体处理装置，能够防止等离子体泄漏到排气空间。基板处理室具有处理空间，其中在基板上执行等离子体处理，将用于从处理空间排出气体的排气空间和将排气空间与处理空间连通在一起的排气流路。等离子体处理装置还具有电接地并设置在排气流路中的接地部件。接地部件具有由导电材料制成的导电部分，导电部分具有暴露于排气流路的暴露区域，范围为100至1000cm 2。

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