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    • 2. 发明授权
    • Positive type photosensitive resin composition and semiconductor device
using the same
    • 正型感光性树脂组合物及使用其的半导体装置
    • US6071666A
    • 2000-06-06
    • US854863
    • 1997-05-12
    • Takashi HiranoToshio BanbaHiroaki MakabeNaoshige TakedaToshiro Takeda
    • Takashi HiranoToshio BanbaHiroaki MakabeNaoshige TakedaToshiro Takeda
    • G03F7/022G03F7/075G03F7/023
    • G03F7/0226G03F7/0755G03F7/0757Y10S430/107
    • A positive type photosensitive resin composition which comprises (A) 100 parts by weight of a polyamide represented by the general formula (1): ##STR1## wherein X represents a tetravalent aromatic group; Y represents a divalent aromatic group; Z represents a group represented by the formula: ##STR2## in which R.sub.1 and R.sub.2 represent organic groups and R.sub.3 and R.sub.4 represent monovalent organic groups; a and b represent molar fractions; a+b=100 mole %; a=60.0-100.0 mole %; b=0-40.0 mole %; and n represents an integer of 2 to 500, (B) 1 to 100 parts by weight of a photosensitive diazoquinone compound and (C) 1 to 50 parts by weight of a phenol compound represented by a specific structural formula and/or (D) 0.1 to 20 parts by weight of an organosilicon compound represented by a specific structural formula; and a semiconductor device in which a pattern of a polybenzoxazole resin obtained by using the above photosensitive resin composition is formed in a thickness of 0.1 to 20 .mu.m on a semiconductor element.
    • 一种正型感光性树脂组合物,其包含(A)100重量份由通式(1)表示的聚酰胺:其中X表示四价芳族基团; Y表示二价芳基; Z表示由下式表示的基团:其中R1和R2表示有机基团,R3和R4表示一价有机基团; a和b表示摩尔分数; a + b = 100摩尔% a = 60.0-100.0摩尔% b = 0-40.0摩尔% n表示2〜500的整数,(B)1〜100重量份感光性重氮醌化合物和(C)1〜50重量份由特定结构式表示的酚化合物和/或(D) 0.1〜20重量份的由具体结构式表示的有机硅化合物; 以及半导体装置,其中通过使用上述感光性树脂组合物得到的聚苯并恶唑树脂的图案在半导体元件上形成为0.1〜20μm的厚度。
    • 3. 发明授权
    • Semiconductor device using positive photosensitive resin composition and process for preparation thereof
    • 使用正型感光性树脂组合物的半导体装置及其制备方法
    • US06235436B1
    • 2001-05-22
    • US09442277
    • 1999-11-17
    • Takashi HiranoToshio BanbaHiroaki MakabeNaoshige TakedaToshiro Takeda
    • Takashi HiranoToshio BanbaHiroaki MakabeNaoshige TakedaToshiro Takeda
    • G03F730
    • G03F7/0226G03F7/0755G03F7/0757Y10S430/107
    • A positive type photosensitive resin composition which comprises (A) 100 parts by weight of a polyamide represented by the general formula (1): wherein X represents a tetravalent aromatic group; Y represents a divalent aromatic group; Z represents a divalent group represented by the formula: in which R1 and R2 represent divalent organic groups and R3 and R4 represent monovalent organic groups; a and b represent molar fractions; a+b=100 mole %; a=60.0-100.0 mole %; b=0-40.0 mole %; and n represents an integer of 2 to 500, (B) 1 to 100 parts by weight of a photosensitive diazoquinone compound and (C)1 to 50 parts by weight of a phenol compound represented by a specific structural formula and/or (D) 0.1 to 20 parts by weight of an organosilicon compound represented by a specific structural formula; and a semiconductor device in which a pattern of a polybenzoxazole resin obtained by using the above photosensitive resin composition is formed in a thickness of 0.1 to 20 &mgr;m on a semiconductor element.
    • 一种正型感光性树脂组合物,其包含(A)100重量份由通式(1)表示的聚酰胺:其中X表示四价芳族基团; Y表示二价芳基; Z表示由下式表示的二价基团:其中R 1和R 2表示二价有机基团,并且R 3和R 4表示一价有机基团; a和b表示摩尔分数; a + b = 100摩尔% a = 60.0-100.0摩尔% b = 0-40.0摩尔% n表示2〜500的整数,(B)1〜100重量份感光性重氮醌化合物和(C)1〜50重量份由特定结构式表示的酚化合物和/或(D) 0.1〜20重量份的由具体结构式表示的有机硅化合物; 以及半导体装置,其中通过使用上述感光性树脂组合物得到的聚苯并恶唑树脂的图案在半导体元件上形成为0.1〜20μm的厚度。
    • 4. 发明授权
    • Method for the pattern-processing of photosensitive resin composition
    • 感光性树脂组合物的图案处理方法
    • US06207356B1
    • 2001-03-27
    • US09287118
    • 1999-04-07
    • Toshio BanbaToshiro Takeda
    • Toshio BanbaToshiro Takeda
    • G03F730
    • G03F7/0233G03F7/0757G03F7/322
    • A method of pattern-processing a photosensitive resin composition which comprises coating on a substrate a positive photosensitive resin composition of a polyamide of formula (1) below and a diazoquinone compound, subjecting the same to prebaking and then to irradiation with light, thereafter dissolving the exposed portion in an alkaline aqueous solution containing an alkylbenzenesulfonic acid to remove the same, thereby obtaining a pattern. wherein X is a tetravalent aromatic group; Y is a divalent aromatic group; Z is in which R1 and R2 are divalent organic groups and R3 and R4 are nonvalent organic groups; a and b are mole fractions; a+b=100 mole %; a=60.0-100 mole %; b=0-40.0 mole % and n=2-500. When the development is effected with the alkaline aqueous solution containing the alkylbenzenesulfonic acid, a scum-free, very high resolution pattern is obtained.
    • 一种感光性树脂组合物的图案处理方法,其特征在于,在基材上涂布下述式(1)的聚酰胺的正型感光性树脂组合物和重氮醌化合物,使其进行预烘烤,然后用光照射, 暴露部分在含有烷基苯磺酸的碱性水溶液中以除去它,从而获得图案。其中X是四价芳族基团; Y为二价芳基; 其中R1和R2是二价有机基团,R3和R4是非常有机基团; a和b是摩尔分数; a + b = 100摩尔% a = 60.0-100摩尔% b = 0-40.0摩尔%,n = 2-500。 当用含有烷基苯磺酸的碱性水溶液进行显影时,获得无浮渣,非常高的分辨率图案。