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1. 发明申请

US20130237036A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：制备氮化物半导体层的方法
公开(公告)号：US20130237036A1
公开(公告)日：2013-09-12
申请号：US13604183
申请日：2012-09-05
申请人： Toshiki HIKOSAKA , Yoshiyuki HARADA , Hisashi YOSHIDA , Naoharu SUGIYAMA , Shinya NUNOUE
发明人： Toshiki HIKOSAKA , Yoshiyuki HARADA , Hisashi YOSHIDA , Naoharu SUGIYAMA , Shinya NUNOUE
IPC分类号： H01L21/02
CPC分类号： H01L21/02389 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.
摘要翻译：根据一个实施例，公开了一种用于制造氮化物半导体层的方法。该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。第一下层沿着平行于主表面的第一轴线具有第一格子间距。第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。第一上层的至少一部分具有压缩应变。第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

2. 发明申请

US20130234151A1 NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR WAFER 有权
标题翻译：氮化物半导体元件和氮化物半导体晶体管
公开(公告)号：US20130234151A1
公开(公告)日：2013-09-12
申请号：US13602868
申请日：2012-09-04
申请人： Toshiki HIKOSAKA , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/20
CPC分类号： H01L29/205 , B82Y20/00 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003 , H01L29/365 , H01L29/7783 , H01L33/06 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0
摘要翻译：根据一个实施例，氮化物半导体元件包括基底层，功能层和层叠体。层叠体设置在基础层和功能层之间。层叠体包括第一层叠中间层，其包括第一GaN中间层，Al x Ga 1-x N 1的第一高Al组成层（0

3. 发明申请

US20120295377A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造氮化物半导体器件的方法
公开(公告)号：US20120295377A1
公开(公告)日：2012-11-22
申请号：US13222238
申请日：2011-08-31
申请人： Taisuke SATO , Naoharu SUGIYAMA , Tomonari SHIODA , Toshiki HIKOSAKA , Shinya NUNOUE
发明人： Taisuke SATO , Naoharu SUGIYAMA , Tomonari SHIODA , Toshiki HIKOSAKA , Shinya NUNOUE
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/22
摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.
摘要翻译：根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。该方法可以包括通过使用第一处理材料从结构体移除生长衬底。结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。支撑基板结合到氮化物半导体层。该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

4. 发明申请

US20110204394A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110204394A1
公开(公告)日：2011-08-25
申请号：US12875503
申请日：2010-09-03
申请人： Toshiki HIKOSAKA , Tomonari Shioda , Yoshiyuki Harada , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Tomonari Shioda , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： H01L33/30 , H01L33/32
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0
摘要翻译：根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。阻挡层设置在n型和p型半导体层之间。阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。阻挡层中的至少一个包括第一层，第二层和第三层。第二层比第一层更靠近p型半导体层。第三层比第二层更靠近p型半导体层。第二层包括Al x Ga 1-x N（0

5. 发明申请

US20120298952A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：半导体发光器件，氮化物半导体层和形成氮化物半导体层的方法
公开(公告)号：US20120298952A1
公开(公告)日：2012-11-29
申请号：US13406770
申请日：2012-02-28
申请人： Toshiki HIKOSAKA , Yoshiyuki HARADA , Maki SUGAI , Shinya NUNOUE
发明人： Toshiki HIKOSAKA , Yoshiyuki HARADA , Maki SUGAI , Shinya NUNOUE
IPC分类号： H01L33/06 , H01L21/20 , H01L29/38
CPC分类号： H01L33/20 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/48
摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.
摘要翻译：根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。基底层具有凹部，侧部和突起部的凹凸。基础层的第一主表面具有覆盖区域。基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

6. 发明申请

US20120299014A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER 有权
标题翻译：半导体发光器件，氮化物半导体层生长衬底和氮化物半导体晶体管
公开(公告)号：US20120299014A1
公开(公告)日：2012-11-29
申请号：US13404553
申请日：2012-02-24
申请人： Toshiki HIKOSAKA , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Yoshiyuki Harada , Maki Sugai , Shinya Nunoue
IPC分类号： H01L29/24 , H01L29/12 , H01L33/32
CPC分类号： H01L33/06 , C30B29/406 , H01L33/007 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，并具有主表面，第二导电类型的第二半导体层和设置在第一和第二半导体层之间的发光层。主表面与发光层相反。第一半导体层具有设置在主表面上的结构体。结构体是凹陷或突起。第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹部的深度，rb是凹部的底部的宽度，Rb是突起的宽度。

7. 发明申请

US20110204411A1 CRYSTAL GROWTH METHOD AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：晶体生长方法和半导体发光器件
公开(公告)号：US20110204411A1
公开(公告)日：2011-08-25
申请号：US12875560
申请日：2010-09-03
申请人： Hajime NAGO , Koichi TACHIBANA , Toshiki HIKOSAKA , Shinya NUNOUE
发明人： Hajime NAGO , Koichi TACHIBANA , Toshiki HIKOSAKA , Shinya NUNOUE
IPC分类号： H01L33/32 , H01L33/30
CPC分类号： H01L33/24 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/32
摘要： According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x
摘要翻译：根据一个实施例，公开了用于在衬底的主表面上生长氮化物半导体的晶体的晶体生长方法。主表面配有凹凸。该方法可以包括以不大于0.1微米/小时的速率在主表面上沉积缓冲层。缓冲层包括GaxAl1-xN（0.1＆nlE; x <0.5），并且具有不小于20纳米且不大于50纳米的厚度。此外，该方法可以包括在沉积缓冲层时在高于衬底的温度的温度下在缓冲层上生长包括氮化物半导体的晶体。

8. 发明申请

US20110147776A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110147776A1
公开(公告)日：2011-06-23
申请号：US12874839
申请日：2010-09-02
申请人： Toshiki HIKOSAKA , Takahiro SATO , Iwao MITSUISHI , Shinya NUNOUE
发明人： Toshiki HIKOSAKA , Takahiro SATO , Iwao MITSUISHI , Shinya NUNOUE
IPC分类号： H01L33/58
CPC分类号： H01L33/504 , H01L24/29 , H01L33/507 , H01L33/508 , H01L2224/14 , H01L2224/48091 , H01L2224/49107 , H01L2224/73257 , H01L2224/73265 , H01L2224/92247 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.
摘要翻译：根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。半导体发光元件发射第一光。半导体发光元件被放置在安装构件上。第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。第一透明层对于第一光和第二光是透明的。

9. 发明申请

US20120138985A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120138985A1
公开(公告)日：2012-06-07
申请号：US13208658
申请日：2011-08-12
申请人： Hiroshi ONO , Toshiki HIKOSAKA , Tomoko MORIOKA , Toshiyuki OKA , Shinya NUNOUE
发明人： Hiroshi ONO , Toshiki HIKOSAKA , Tomoko MORIOKA , Toshiyuki OKA , Shinya NUNOUE
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/06 , H01L33/20
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层和发光部分。第一半导体层包括n型半导体层。第二半导体层包括p型半导体层。发光部分设置在第一半导体层和第二半导体层之间，并且包括多个势垒层和设置在多个势垒层之间的阱层。第一半导体层具有第一不规则性和第二不规则性。第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。第二不规则性设置在第一凹凸的底面和顶面上，并且具有小于底面与顶面之间的水平差的水平差。

10. 发明申请

US20120132943A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20120132943A1
公开(公告)日：2012-05-31
申请号：US13204013
申请日：2011-08-05
申请人： Toshiki HIKOSAKA , Hajime Nago , Koichi Tachibana , Toshihide Ito , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Hajime Nago , Koichi Tachibana , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/58
CPC分类号： H01L33/22 , H01L33/325 , H01L33/40
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×107/cm2 or more and 2×108/cm2 or less.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，电极，p型半导体层和发光层。 p型半导体层设置在n型半导体层和电极之间，并且包括与电极接触的p侧接触层。发光层设置在n型和p型半导体层之间。 p侧接触层包括具有垂直于从n型半导体层朝向p型半导体层的第一方向的平面的平坦部分和从平坦部分向电极突出的多个突出部分。沿着第一方向的多个突出部分的高度小于从发光层发射的光的主波长的四分之一。平面内的多个突出部的密度为5×10 7 / cm 2以上2×10 8 / cm 2以下。

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