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1. 发明申请

US20050008972A1 Multilayered body for photolithographic patterning 有权
标题翻译：用于光刻图案的多层体
公开(公告)号：US20050008972A1
公开(公告)日：2005-01-13
申请号：US10901207
申请日：2004-07-29
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： H01L21/027 , G03F7/038 , G03F7/09 , G03C1/76
CPC分类号： G03F7/091 , G03F7/0382
摘要： Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
摘要翻译：公开了一种用于光致抗蚀剂层的光刻图案的新型多层体，当多层结构在基材的表面上包含下面的不溶于水的抗反射膜时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂; （B）0.5〜20重量份能够通过光化射线照射而释放酸的鎓盐化合物; 和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。

2. 发明授权

US07033731B2 Multilayered body for photolithographic patterning 有权
标题翻译：用于光刻图案的多层体
公开(公告)号：US07033731B2
公开(公告)日：2006-04-25
申请号：US10901207
申请日：2004-07-29
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7/11
CPC分类号： G03F7/091 , G03F7/0382
摘要： Disclosed is a novel multilayered body for photo-lithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
摘要翻译：公开了一种用于光致抗蚀剂层的光刻图案化的新型多层体，当多层结构在基材表面上包含下面的不溶于水的抗蚀剂层时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层，反射膜和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂; （B）0.5〜20重量份能够通过光化射线照射而释放酸的鎓盐化合物; 和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。

3. 发明授权

US06455228B1 Multilayered body for photolithographic patterning 有权
标题翻译：用于光刻图案的多层体
公开(公告)号：US06455228B1
公开(公告)日：2002-09-24
申请号：US09641686
申请日：2000-08-18
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7004
CPC分类号： G03F7/091 , G03F7/0382
摘要： Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
摘要翻译：公开了一种用于光致抗蚀剂层的光刻图案的新型多层体，当多层结构在基材的表面上包含下面的不溶于水的抗反射膜时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂;（B）0.5至20重量份能够通过照射释放酸的鎓盐化合物与光化射线和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。

4. 发明授权

US06864036B2 Negative-working photoresist composition 失效
标题翻译：负性光刻胶组合物
公开(公告)号：US06864036B2
公开(公告)日：2005-03-08
申请号：US10053622
申请日：2002-01-24
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/0382 , G03F7/0045 , Y10S430/106
摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.
摘要翻译：公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）酸产生剂和（C）交联剂，其中组分（B）是鎓盐化合物选自碘鎓盐化合物和锍盐化合物，具有特定氟代烷基磺酸根离子作为阴离子部分，组分（C）是通过羟甲基或烷氧基甲基取代至少一个氮原子的特定亚乙基脲化合物。光致抗蚀剂组合物特别适用于在具有良好的图案分辨率的水不溶性有机抗反射膜的底涂层和具有良好温度纬度的图案化抗蚀剂层的正交截面轮廓的基材表面上形成光致抗蚀剂层在用于潜像形成的后曝光烘烤处理中。

5. 发明授权

US06406829B1 Negative-working photoresist composition 有权
标题翻译：负性光刻胶组合物
公开(公告)号：US06406829B1
公开(公告)日：2002-06-18
申请号：US09638872
申请日：2000-08-15
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , Y10S430/128
摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.
摘要翻译：公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）酸产生剂和（C）交联剂，其中组分（B）是鎓盐化合物具有特定的氟烷基磺酸根离子作为阴离子部分，组分（C）是通过羟甲基或烷氧基甲基取代至少一个氮原子的特定亚乙基脲化合物。光致抗蚀剂组合物特别适用于在具有良好的图案分辨率的水不溶性有机抗反射膜的底涂层和具有良好温度纬度的图案化抗蚀剂层的正交截面轮廓的基材表面上形成光致抗蚀剂层在用于潜像形成的后曝光烘烤处理中。

6. 发明授权

US5326135A Vehicle wheel splash attenuator 失效
标题翻译：车轮飞溅衰减器
公开(公告)号：US5326135A
公开(公告)日：1994-07-05
申请号：US931230
申请日：1992-08-17
申请人： Takeshi Nakayama , Itaru Kurimoto , Koutaro Endo
发明人： Takeshi Nakayama , Itaru Kurimoto , Koutaro Endo
IPC分类号： B62D25/18 , B62D25/16
CPC分类号： B62D25/168 , B62D25/16 , B62D25/161
摘要： A vehicle wheel splash attenuator has a deflection-suppressing member designed to be installed in a tire housing so as to face a tire and define a space of more than 15 mm between itself and the inner face of the tire housing. The deflection-suppressing member has strands formed therein which define a plurality of apertures through which muddy water flung by the tire is passed. The deflection-suppressing member thus suppresses the deflection of the muddy water impinging upon the tire housing. The opening ratio of the apertures is within a range of 25 to 55%, the diameter of the apertures elongated circumferentially of the tire is within a range of 30 to 150 mm, and the width of those strands defining the apertures and facing the tire is within a range of 2 to 15 mm. The cross-section of at least those strands projected toward the tire is shaped into a triangle whose apex is directed toward the tire and whose bottom is directed toward the tire housing.
摘要翻译：车轮飞溅衰减器具有偏转抑制构件，该偏转抑制构件被设计为安装在轮胎壳体中以面对轮胎并且在其自身和轮胎壳体的内表面之间限定出大于15mm的空间。偏转抑制构件具有形成在其中的线，其限定了多个孔，通过轮胎流动的泥水被通过。因此，偏转抑制部件抑制了撞击在轮胎壳体上的泥水的挠曲。孔的开口率在25〜55％的范围内，轮胎周向延伸的孔的直径在30〜150mm的范围内，限定孔径且面向轮胎的线的宽度为在2到15毫米的范围内。至少那些向轮胎投射的股线的横截面被成形为三角形，其顶点指向轮胎并且其底部指向轮胎壳体。

7. 发明申请

US20050203262A1 Fluorinated polymers, photoresists and processes for microlithography 审中-公开
标题翻译：氟化聚合物，光致抗蚀剂和微光刻工艺
公开(公告)号：US20050203262A1
公开(公告)日：2005-09-15
申请号：US10521412
申请日：2003-07-23
申请人： Andrew Feiring , Frank Schadt , Toshiyuki Ogata , Koutaro Endo
发明人： Andrew Feiring , Frank Schadt , Toshiyuki Ogata , Koutaro Endo
IPC分类号： C08F114/18 , C08F214/18 , C08F220/28 , C08F220/30 , G03F7/004 , G03F7/039 , G03F7/32 , H01L21/027
CPC分类号： G03F7/0046 , C08F214/186 , C08F220/30 , G03F7/0395 , G03F7/0397
摘要： Fluorinated polymers useful in photoresist compositions and associated processes for microlithography are described. These polymers and photoresists have a fluoroalcohol functional group that simultaneously imparts high ultraviolet (UV) transparency and developability in basic media. The polymers also have a repeat unit derived from a C1-C25 alkyl hydroxymethylacrylate comonomer, e.g., tert-butyl hydroxymethylacrylate, or a C5-C50 polycyclic alkyl acrylate in which the polycyclic group contains a hydroxy group, e.g., hydroxyadamantyl acrylate. The materials of this invention have high UV tansparency, particularly at short wavelengths, e.g., 193 nm and 157 nm, which makes them highly useful for lithography at these short wavelengths.
摘要翻译：描述了可用于光致抗蚀剂组合物和用于微光刻的相关工艺的氟化聚合物。这些聚合物和光致抗蚀剂具有同时在基础介质中赋予高紫外（UV）透明度和显影性的氟代醇官能团。聚合物还具有衍生自C 1 -C 25烷基羟甲基丙烯酸酯共聚单体的重复单元，例如羟丙基甲基丙烯酸叔丁酯或C 5 >其中多环基团含有羟基的丙烯酸多环烷基酯，例如丙烯酸羟基金刚烷酯。本发明的材料具有高的紫外线透明度，特别是在短波长例如193nm和157nm处，这使得它们在这些短波长下对光刻非常有用。

8. 发明申请

US20050123854A1 Positive resist composition and base material carrying layer of the positive resist composition 审中-公开
标题翻译：正型抗蚀剂组合物的正性抗蚀剂组合物和基材载体层
公开(公告)号：US20050123854A1
公开(公告)日：2005-06-09
申请号：US11035965
申请日：2005-01-18
申请人： Toshiyuki Ogata , Koutaro Endo , Hiroshi Komano
发明人： Toshiyuki Ogata , Koutaro Endo , Hiroshi Komano
IPC分类号： G03F7/039 , C08G77/50 , C08G77/52 , C08L83/06 , C08L83/14 , G03F7/075 , G03F7/11 , H01L21/027 , G03C1/76
CPC分类号： G03F7/0757 , G03F7/0392 , Y10S430/106 , Y10S430/115
摘要： A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.
摘要翻译：正型抗蚀剂组合物包括（A）碱溶性聚硅氧烷树脂，（B）由在活性光或辐射线照射时产生酸的化合物组成的酸发生剂，和（C）至少一种氢酚羟基或羧基的原子被酸可分解基团取代。该正性抗蚀剂组合物可用于使用F 2 N 2准分子激光（157nm），极紫外线（EUV，真空紫外线; 13nm）和波长等于或小于 KrF准分子激光器，具有高清晰度，可以形成具有良好截面形状的抗蚀剂图案。携带正性抗蚀剂组合物层的基材也是有用的。

9. 发明授权

US06787284B2 Positive resist composition and base material carrying layer of the positive resist composition 有权
标题翻译：正型抗蚀剂组合物的正性抗蚀剂组合物和基材载体层
公开(公告)号：US06787284B2
公开(公告)日：2004-09-07
申请号：US09922723
申请日：2001-08-07
申请人： Toshiyuki Ogata , Koutaro Endo , Hiroshi Komano
发明人： Toshiyuki Ogata , Koutaro Endo , Hiroshi Komano
IPC分类号： G03C173
CPC分类号： G03F7/0757 , G03F7/0392 , Y10S430/106 , Y10S430/115
摘要： A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.
摘要翻译：正型抗蚀剂组合物包括（A）碱溶性聚硅氧烷树脂，（B）由在活性光或辐射线照射时产生酸的化合物组成的酸发生剂，和（C）至少一种氢酚羟基或羧基的原子被酸可分解基团取代。该正性抗蚀剂组合物可用于使用F2准分子激光器（157nm），极紫外线（EUV，真空紫外线; 13nm）和波长等于或短于KrF准分子激光器的其它光源的方法，并具有高清晰度，可以形成具有良好截面形状的抗蚀剂图案。携带正性抗蚀剂组合物层的基材也是有用的。

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