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1. 发明专利

JP2007157778A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2007157778A
公开(公告)日：2007-06-21
申请号：JP2005346953
申请日：2005-11-30
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： NAKAMURA TAKAFUMI , IWAMOTO MASANOBU , FURUKAWA CHISATO
IPC分类号： H01L33/30 , H01L33/38 , H01L33/40 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device wherein current blocking structure can be formed by a comparatively easy method. SOLUTION: The semiconductor light emitting device includes a first conductive first clad layer, an active layer formed on the first clad layer, a second conductive second clad layer formed on the active layer, a second conductive light extraction layer 7 formed on the second clad layer, an ohmic contact electrode 30 that is ohmic to the light extraction layer, and a bonding pad electrode formed on the light extraction layer that is non-ohmic to the light extraction layer and is electrically connected with the ohmic contact electrode. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体发光器件，其中可以通过相对容易的方法形成电流阻挡结构。解决方案：半导体发光器件包括第一导电第一覆盖层，形成在第一覆盖层上的有源层，形成在有源层上的第二导电第二覆盖层，形成在有源层上的第二导电光提取层7 第二覆层，与光提取层欧姆的欧姆接触电极30，以及形成在光提取层上的与光提取层非欧姆并与欧姆接触电极电连接的焊盘电极。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2014063927A Optical coupling device and semiconductor light-emitting element 有权
标题翻译：光耦合器件和半导体发光元件
公开(公告)号：JP2014063927A
公开(公告)日：2014-04-10
申请号：JP2012208843
申请日：2012-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJIMOTO KENJI , IWAMOTO MASANOBU
IPC分类号： H01L31/12
CPC分类号： H01L31/173
摘要： PROBLEM TO BE SOLVED: To provide an optical coupling device that has improved light coupling efficiency and that allows easily reducing the thickness and mounting area, and to provide a semiconductor light-emitting element.SOLUTION: An optical coupling device includes a light-emitting element 10, light-receiving element 20, an adhesive layer 34, input-side leads 30, output-side leads 40, and a resin-molded body 60. The light-emitting element 10 has a supporting substrate, a semiconductor stack having first and second surfaces and including a light-emitting layer, and first and second electrodes. The light-receiving element has first and second electrodes. The adhesive layer 34 bonds the light-emitting element 10 and a side of a light-receiving surface, and has translucency and insulation properties. The input-side leads 30 are connected to the first and second electrodes of the light-emitting element 10. The output-side leads 40 are connected to the first and second electrodes of the light-receiving element 20. The resin-molded body 60 covers the light-emitting element 10 and the light-receiving element 20, and has a light-blocking effect. The input-side leads 30 and the output-side leads 40 protrude in different directions from one another.
摘要翻译：要解决的问题：提供一种具有改善的光耦合效率并且允许容易地减小厚度和安装面积的光耦合装置，并提供半导体发光元件。解决方案：光耦合装置包括发光元件如图10所示，光接收元件20，粘合剂层34，输入侧引线30，输出侧引线40和树脂模制体60.发光元件10具有支撑基板，半导体叠层具有第一和第二表面并且包括发光层，以及第一和第二电极。光接收元件具有第一和第二电极。粘合剂层34将发光元件10和受光面的一侧粘合，并且具有半透明性和绝缘性。输入侧引线30连接到发光元件10的第一和第二电极。输出侧引线40连接到光接收元件20的第一和第二电极。树脂模制体60 覆盖发光元件10和受光元件20，并且具有遮光效果。输入侧引线30和输出侧引线40从彼此不同的方向突出。

3. 发明专利

JP2007012688A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2007012688A
公开(公告)日：2007-01-18
申请号：JP2005188392
申请日：2005-06-28
申请人： Toshiba Corp , 株式会社東芝
发明人： IWAMOTO MASANOBU , ISHIDA YOSHIKAZU , KOMATSUBARA TADASHI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having luminescence wavelength which can widely be compatible with light reception sensitivity of a silicone light receiving element. SOLUTION: The semiconductor light emitting device is provided with a compound semiconductor substrate, an active layer which is formed on the compound semiconductor substrate and comprises a barrier layer and a distortion quantum well layer, a first cladding layer installed between the active layer and the compound semiconductor substrate, a second cladding layer disposed on the active layer, and a current diffusion layer arranged on the second cladding layer. Wavelength of radiation light from the active layer is longer than band gap wavelength of the compound semiconductor substrate and the current diffusion layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够广泛地与硅酮光接收元件的光接收灵敏度兼容的发光波长的半导体发光器件。解决方案：半导体发光器件设置有化合物半导体衬底，形成在化合物半导体衬底上并包含势垒层和畸变量子阱层的有源层，安装在有源层之间的第一覆层所述化合物半导体基板，设置在所述有源层上的第二包层，以及设置在所述第二包层上的电流扩散层。来自有源层的辐射光的波长比化合物半导体衬底和电流扩散层的带隙波长长。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2011100829A Method for manufacturing semiconductor light-emitting device, and the same 审中-公开
标题翻译：制造半导体发光器件的方法及其制造方法
公开(公告)号：JP2011100829A
公开(公告)日：2011-05-19
申请号：JP2009254009
申请日：2009-11-05
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIDA YOSHIKAZU , IWAMOTO MASANOBU
IPC分类号： H01L33/22 , H01L21/306 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting device with an enhanced optical output by improving light extraction efficiency from inside a semiconductor crystal, and to provide the semiconductor light-emitting device. SOLUTION: The method for manufacturing the light-emitting device includes a step of dipping semiconductor laminates into a nitric acid solution whose temperature is maintained below 0°C and roughening a surface of a surface layer. The semiconductor laminates have an emitting layer 2 and the surface layer 8 that contains a Ga (1-x) Al x A s layer (0≤x COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种通过从半导体晶体内部提高光提取效率来制造具有增强的光输出的半导体发光器件的方法，并提供半导体发光器件。解决方案：用于制造发光器件的方法包括将半导体层压体浸入温度保持在0℃以下的硝酸溶液中并粗糙化表面层的步骤。半导体层压体具有发光层2和表面层8，其含有Ga（SB）（1-x） Al x 从而提取从发光层发出的光。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JPH08288544A SEMICONDUCTOR LIGHT-EMITTING ELEMENT 失效
公开(公告)号：JPH08288544A
公开(公告)日：1996-11-01
申请号：JP8951095
申请日：1995-04-14
申请人： TOSHIBA CORP
发明人： NISHITANI KATSUHIKO , UNNO KAZUMI , ISHIKAWA MASAYUKI , SAEKI AKIRA , NAKAMURA TAKAFUMI , IWAMOTO MASANOBU
IPC分类号： H01L33/10 , H01L33/12 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/00
摘要： PURPOSE: To provide a high-luminance and long-life semiconductor light-emitting element. CONSTITUTION: Both clad layers 4 and 5 and both clad layers 7 and 8, which form a double hetrojunction holding an active layer 6, which is formed on a semiconductor substrate 1, between them, consist of an InGaAlP mixed crystal layer formed into two layers and a semiconductor light-emitting element is constituted in such a way that the Al ratio (u) of the layer 6 of mixed crystal to the Al ratio (y) of the layer 6 and the layers 5 and 7, which come into contact with the layer 6, of mixed crystal to the Al ratio (x) of the layers 5 and 7, a second clad layer 4, which is laminated on the substrate 1, and the layer 8 of mixed crystal are set into u:y:x=3:6:7 or 3:8:10.

6. 发明专利

JP2002222989A SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
公开(公告)号：JP2002222989A
公开(公告)日：2002-08-09
申请号：JP2001018934
申请日：2001-01-26
申请人： TOSHIBA CORP
发明人： SUGAWARA HIDETO , NITTA KOICHI , SAEKI AKIRA , IWAMOTO MASANOBU , KONDO KATSUAKI
IPC分类号： H01L27/15 , H01L33/14 , H01L33/30 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which easily and fairly enhances optical output efficiency without requiring complicated manufacturing steps or manufacturing techniques. SOLUTION: There are provided a light-emitting part for emitting first lights by current injection, and an absorption light-emitting part for emitting second lights by absorbing the first lights from the first light-emitting part, whereby an internal loss of emitted lights from the light-emitting part is decreased and external quantum efficiency can be enhanced.

7. 发明专利

JP2001308378A MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT 失效
公开(公告)号：JP2001308378A
公开(公告)日：2001-11-02
申请号：JP2000125528
申请日：2000-04-26
申请人： TOSHIBA CORP
发明人： IWAMOTO MASANOBU
IPC分类号： H01L21/205 , H01L33/12 , H01L33/14 , H01L33/30 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element, which can stably obtain the optimum luminous efficiency and the optimum degree of fluctuation output in the state corresponding to the luminous wavelength of the element when the element is manufactured. SOLUTION: When an N-type GaAs buffer layer 34, a light reflection layer 35, a first clad layer 36 consisting of a pair of an N-type InAlP layer and an N-type In0.5(Ga0.4Al0.6)0.5P layer, an undoped In0.5(Ga(1-x)Alx)0.5P active layer 23, a second clad layer 37 consisting of a pair of a P-type InAlP layer and a P-type In0.5-(Ga0.4Al0.6)0.5P layer, a current diffusion layer 38 and the like are formed in order on an N-type GaAs substrate 22 by an epitaixal growth and a reduced MOCVD method, the epitaxial growth process of each layer of the layers 34, 35, 36, 23, 37, 38 and the like is executed at the optimum growth temperature Tg obtainable at TG=100×(x)+710( deg.C) at the mixed crystal ratio (x) of Al of the layer 23.

8. 发明专利

JPH10125955A SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH10125955A
公开(公告)日：1998-05-15
申请号：JP27489296
申请日：1996-10-17
申请人： TOSHIBA CORP
发明人： NISHITANI KATSUHIKO , WATANABE YUKIO , IWAMOTO MASANOBU
IPC分类号： H01L21/205 , H01L21/324 , H01L33/12 , H01L33/14 , H01L33/30 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is higher in brightness than a conventional one and a method of manufacture it. SOLUTION: Through an MOCVD (organic metal chemical vapor growth method) method, an N-GaAs buffer layer, an N-In0.5 Al0.5 P/GaAs light reflecting layer, an N-In0.5 (Ga1- XAlX)P0.5 clad layer, an undoped In0.5 (Ga1- YAlY)P active layer, a P-In0.5 (Ga1- XAlX)0.5 P clad layer, an N-GaAs block layer, a P-Ga0.2 Al0.8 As current diffusion layer, and a P-GaAs contact layer are successively formed on an N-GaAs substrate. The N-GaAs substrate is put into an oven and thermally treated at a constant temperature of 350 to 600 deg.C for above one hour feeding Ar gas, and then a P-side electrode is provided to the P-GaAs contact layer, and an N-side electrode is provided to the rear of the N-GaAs substrate.

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