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1. 发明专利

JP2012199293A Semiconductor light-emitting element and optical coupling device 有权
标题翻译：半导体发光元件和光耦合器件
公开(公告)号：JP2012199293A
公开(公告)日：2012-10-18
申请号：JP2011060939
申请日：2011-03-18
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIDA YOSHIKAZU , FUJIMOTO KENJI
IPC分类号： H01L33/10 , H01L31/12 , H01L33/30
CPC分类号： H01L25/167 , H01L33/10 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with reduced emission spectrum intensity of emission light outside the peak wavelength range and an optical coupling device using the same.SOLUTION: A semiconductor light-emitting element comprises a light-emitting layer, a first layer, a second layer, and a distributed Bragg reflection layer. The light-emitting layer has a first surface and a second surface, and can emit emission light having a peak wavelength in a wavelength range from 740 nm or more to 830 nm or less. The first layer is provided on the first surface side of the light-emitting layer, has a first conductivity type, and has a light extraction surface provided on the opposite side of the light-emitting layer. The second layer is provided on the second surface side of the light-emitting layer and has a second conductivity type. The distributed Bragg reflection layer is provided on the side of the second layer opposite to the side on which the light-emitting layer is provided, has the second conductivity type, and can reflect the emission light toward the light extraction surface. Third and fourth layers have a band-gap wavelength shorter than the peak wavelength.
摘要翻译：要解决的问题：提供具有降低发射光的峰值波长范围外的发射光谱强度的半导体发光元件和使用其的光耦合器件。解决方案：半导体发光元件包括发光层，第一层，第二层和分布布拉格反射层。发光层具有第一表面和第二表面，并且可以发射波长在740nm以上至830nm以下的峰值波长的发光。第一层设置在发光层的第一表面侧，具有第一导电型，并且具有设置在发光层的相对侧的光提取面。第二层设置在发光层的第二表面侧，并具有第二导电类型。分布式布拉格反射层设置在与设置有发光层的一侧相反的第二层侧，具有第二导电类型，并且能够将发射光反射到光提取表面。第三层和第四层具有比峰值波长短的带隙波长。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2007012688A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2007012688A
公开(公告)日：2007-01-18
申请号：JP2005188392
申请日：2005-06-28
申请人： Toshiba Corp , 株式会社東芝
发明人： IWAMOTO MASANOBU , ISHIDA YOSHIKAZU , KOMATSUBARA TADASHI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having luminescence wavelength which can widely be compatible with light reception sensitivity of a silicone light receiving element. SOLUTION: The semiconductor light emitting device is provided with a compound semiconductor substrate, an active layer which is formed on the compound semiconductor substrate and comprises a barrier layer and a distortion quantum well layer, a first cladding layer installed between the active layer and the compound semiconductor substrate, a second cladding layer disposed on the active layer, and a current diffusion layer arranged on the second cladding layer. Wavelength of radiation light from the active layer is longer than band gap wavelength of the compound semiconductor substrate and the current diffusion layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够广泛地与硅酮光接收元件的光接收灵敏度兼容的发光波长的半导体发光器件。解决方案：半导体发光器件设置有化合物半导体衬底，形成在化合物半导体衬底上并包含势垒层和畸变量子阱层的有源层，安装在有源层之间的第一覆层所述化合物半导体基板，设置在所述有源层上的第二包层，以及设置在所述第二包层上的电流扩散层。来自有源层的辐射光的波长比化合物半导体衬底和电流扩散层的带隙波长长。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2012028667A Light emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2012028667A
公开(公告)日：2012-02-09
申请号：JP2010167887
申请日：2010-07-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KURONAGA KOICHI , FUJIMOTO KENJI , ISHIDA YOSHIKAZU
IPC分类号： H01L33/30
CPC分类号： H01L33/10
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device featuring reduced pulse width distortion and improved transmission quality.SOLUTION: The light-emitting device according to an embodiment comprises: a substrate; a luminous layer; a first conductive layer disposed between the substrate and the luminous layer; a first distribution Bragg reflection layer disposed between the first conductive layer and the substrate; a second distribution Bragg reflection layer disposed between the luminous layer and the first distribution Bragg reflection layer. The first distribution Bragg reflection layer consists of a first layer and a second layer having a different refractive index than that of the first layer which are stacked one on top of another, and has a center wavelength which matches the emission wavelength of emitted light from the luminous layer. The second distribution Bragg reflection layer consists of a third layer and a fourth layer having a different refractive index than that of the third layer which are stacked one on top of another, and has a longer center wavelength in the range of 5 nm to 20 nm than the center wavelength of the first distribution Bragg reflection layer, characterized in that the number of pairs of the third and the fourth layers is smaller than that of the first and the second layers.
摘要翻译：要解决的问题：提供具有减小的脉冲宽度失真和改善的传输质量的发光装置。解决方案：根据实施例的发光器件包括：基板; 发光层; 设置在所述基板和所述发光层之间的第一导电层; 设置在所述第一导电层和所述基板之间的第一分布布拉格反射层; 设置在发光层和第一分布布拉格反射层之间的第二分布布拉格反射层。第一分布布拉格反射层由具有与第一层不同的折射率的第一层和第二层组成，第一层和第二层层叠在另一层之上，并且具有与来自第一层的发射波长的发射波长匹配的中心波长发光层。第二分布布拉格反射层由具有与第三层不同的折射率的第三层和第四层构成，该第三层和第四层层叠在另一层之上，并且在5nm至20nm的范围内具有较长的中心波长比第一分布布拉格反射层的中心波长，其特征在于第三层和第四层的对数比第一层和第二层的对数小。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011100829A Method for manufacturing semiconductor light-emitting device, and the same 审中-公开
标题翻译：制造半导体发光器件的方法及其制造方法
公开(公告)号：JP2011100829A
公开(公告)日：2011-05-19
申请号：JP2009254009
申请日：2009-11-05
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIDA YOSHIKAZU , IWAMOTO MASANOBU
IPC分类号： H01L33/22 , H01L21/306 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting device with an enhanced optical output by improving light extraction efficiency from inside a semiconductor crystal, and to provide the semiconductor light-emitting device. SOLUTION: The method for manufacturing the light-emitting device includes a step of dipping semiconductor laminates into a nitric acid solution whose temperature is maintained below 0°C and roughening a surface of a surface layer. The semiconductor laminates have an emitting layer 2 and the surface layer 8 that contains a Ga (1-x) Al x A s layer (0≤x COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种通过从半导体晶体内部提高光提取效率来制造具有增强的光输出的半导体发光器件的方法，并提供半导体发光器件。解决方案：用于制造发光器件的方法包括将半导体层压体浸入温度保持在0℃以下的硝酸溶液中并粗糙化表面层的步骤。半导体层压体具有发光层2和表面层8，其含有Ga（SB）（1-x） Al x 从而提取从发光层发出的光。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2000349331A MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JP2000349331A
公开(公告)日：2000-12-15
申请号：JP15668899
申请日：1999-06-03
申请人： TOSHIBA CORP
发明人： ISHIDA YOSHIKAZU , TOMARINO TAKASHI , KOGA KENJIRO , SHIMOMURA KENJI
IPC分类号： H01L21/306 , H01L33/30 , H01L33/36 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To improve light extracting efficiency from the inside part of a crystal on a light extraction face, and to improve outside light emitting efficiency. SOLUTION: In a method for manufacturing a semiconductor light emitting element, an n electrode 12 and a p electrode 13 are formed on the both upper and lower main faces of a semiconductor wafer on which a light emitting layer is formed, and sintered, and the n electrode 12 is patterned into a prescribed shape, and the semiconductor wafer is diced so as to be separated into plural semiconductor chips 16 in a prescribed dimension. In this case, the semiconductor wafer is separated into the plural semiconductor chips 16, and etched in aqueous solution nitrate with prescribed density so that the upper face of the light extraction face of the semiconductor chip 16 can be formed as a frost-shaped face 18a with prescribed facial roughness obtained by removing an alloy layer 14 other than the alloy layer under the n electrode 12, and the side face of the semiconductor chip 16 can be formed as a frost-shaped face 18b with prescribed facial roughness obtained by removing a crashed layer.

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